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S-5741RBL0-M3T2U

S-5741RBL0-M3T2U

  • 厂商:

    ABLIC(艾普凌科)

  • 封装:

    TO236-3

  • 描述:

    MAGNETIC SWITCH LATCH SOT23-3

  • 数据手册
  • 价格&库存
S-5741RBL0-M3T2U 数据手册
S-5741 Series HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH N www.ablicinc.com Rev.1.1_02 DE SI G © ABLIC Inc., 2014-2015 This product is intended to use in general electronic devices such as consumer electronics, office equipment, and communications devices. Before using the product in medical equipment or automobile equipment including car audio, keyless entry and engine control unit, contact to ABLIC Inc. is indispensable. R NE Caution W The S-5741 Series, developed by CMOS technology, is a bipolar Hall effect latch with high-withstand voltage, high-speed detection and high-accuracy magnetic characteristics. The output voltage changes when the S-5741 Series detects the intensity level of magnetic flux density and a polarity change. Using the S-5741 Series with a magnet makes it possible to detect the rotation status in various devices. The S-5741 Series includes an output current limit circuit. High-density mounting is possible by using the small SOT-23-3 package. Due to its high-accuracy magnetic characteristics, the S-5741 Series can make operation's dispersion in the system combined with magnet smaller.  Pole detection: *1  Detection logic for magnetism : Bipolar latch VOUT = "L" at S pole detection VOUT = "H" at S pole detection Nch open-drain output Nch driver  built-in pull-up resistor BOP = 1.8 mT typ. BOP = 3.0 mT typ. BOP = 6.0 mT typ. tCYCLE = 8.0 s typ. VDD = 3.5 V to 26.0 V  Magnetic sensitivity*1: MM EN  Operating cycle:  Power supply voltage range:  Built-in regulator  Built-in output current limit circuit  Operation temperature range:  Lead-free (Sn 100%), halogen-free DE D *1  Output form : FO  Features Ta = 40C to 85C  Applications CO *1. The option can be selected. NO T RE  Home appliance  DC brushless motor  Housing equipment  Industrial equipment  Package  SOT-23-3 1 HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_02 S-5741 Series  Block Diagrams Nch open-drain output product N 1. DE SI G VDD OUT Regulator *1 W Chopping stabilized amplifier Output current limit circuit NE VSS *1. Parasitic diode FO Nch driver  built-in pull-up resistor product D 2. R Figure 1 DE VDD OUT CO VSS MM EN Regulator Chopping stabilized amplifier Output current limit circuit NO T RE *1. Parasitic diode 2 Figure 2 *1 HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_02 S-5741 Series  Product Name Structure S-5741 x B x x - M3T2 N Product name U DE SI G 1. Environmental code U: Lead-free (Sn 100%), halogen-free Package name (abbreviation) and packing specifications*1 M3T2: SOT-23-3, Tape NE W Magnetic sensitivity 0: BOP = 1.8 mT typ. 1: BOP = 3.0 mT typ. 2: BOP = 6.0 mT typ. R Detection logic for magnetism L: VOUT = "L" at S pole detection H: VOUT = "H" at S pole detection FO Pole detection B: Bipolar latch DE D Output form N: Nch open-drain output R: Nch driver  built-in pull-up resistor *1. Refer to the tape drawing. Package MM EN 2. Table 1 Package Name SOT-23-3 Product name list Tape Reel MP003-C-C-SD MP003-Z-R-SD Output Form Table 2 Pole Detection S-5741NBL1-M3T2U Nch open-drain output Bipolar latch S-5741NBL2-M3T2U Nch open-drain output Bipolar latch NO T RE Product Name Dimension MP003-C-P-SD CO 3. Package Drawing Codes S-5741RBL0-M3T2U Nch driver  built-in pull-up resistor Bipolar latch S-5741RBL1-M3T2U Nch driver  built-in pull-up resistor Bipolar latch S-5741RBH1-M3T2U Nch driver  built-in pull-up resistor Bipolar latch Detection Logic Magnetic for Magnetism Sensitivity (BOP) VOUT = "L" at S pole 3.0 mT typ. detection VOUT = "L" at S pole 6.0 mT typ. detection VOUT = "L" at S pole 1.8 mT typ. detection VOUT = "L" at S pole 3.0 mT typ. detection VOUT = "H" at S pole 3.0 mT typ. detection Remark Please contact our sales office for products other than the above. 3 HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_02 S-5741 Series  Pin Configuration SOT-23-3 N 1. Table 3 Pin No. 1 2 Symbol Description 1 VSS GND pin 2 VDD Power supply pin 3 OUT Output pin 3 W Figure 3 NE  Absolute Maximum Ratings R Table 4 Symbol (Ta = 25C unless otherwise specified) Absolute Maximum Rating Unit VSS  0.3 to VSS  28.0 20 mA VSS  0.3 to VSS  28.0 V VSS  0.3 to VDD  0.3 430*1 mW Topr 40 to 85 C Tstg 40 to 125 C FO Item Power supply voltage VDD Output current Output voltage DE SI G Top view IOUT Nch open-drain output product DE D Nch driver  built-in pull-up resistor product Power dissipation Operation ambient temperature Storage temperature VOUT PD V V MM EN *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm  76.2 mm  t1.6 mm (2) Board name: JEDEC STANDARD51-7 Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. 400 200 0 0 Figure 4 4 Power Dissipation (PD) [mW] NO T RE CO 600 150 100 50 Ambient Temperature (Ta) [C] Power Dissipation of Package (When Mounted on Board) HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_02 S-5741 Series  Electrical Characteristics Table 5 IDD Output voltage VOUT VD Leakage current ILEAK Operating cycle tCYCLE Operating frequency fCYCLE Output limit current IOM Start up time tPON Pull-up resistor RL N 12.0 26.0 V   3.0 4.0 mA 1  3.0 4.0 mA 1   0.4 V 2   0.5 V 2   20 mV 2   10 A 3  8.0  s    125  kHz  22  70 mA 3 VOUT = 12.0 V   20  s 4 Nch driver  built-in pull-up resistor product 7 10 13 k  NO T RE CO MM EN DE D Output drop voltage 3.5 W Current consumption  Nch open-drain output product Average value Nch driver  built-in pull-up resistor product Average value, VOUT = "H" Nch open-drain output product Output transistor Nch, VOUT = "L", IOUT = 10 mA Nch driver  built-in pull-up resistor product Output transistor Nch, VOUT = "L", IOUT = 10 mA Nch driver  built-in pull-up resistor product VOUT = "H", VD = VDD  VOUT Nch open-drain output product Output transistor Nch, VOUT = "H" = 26.0 V  NE VDD R Power supply voltage DE SI G Symbol FO Item (Ta = 25C, VDD = 12.0 V, VSS = 0 V unless otherwise specified) Test Condition Min. Typ. Max. Unit Circuit 5 HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_02 S-5741 Series  Magnetic Characteristics Product with BOP = 1.8 mT typ. N 1. Table 6 Item Operation point*1 S pole Release point*2 N pole *3 Hysteresis width Condition   BHYS = BOP  BRP Min. 0.3 3.3  Product with BOP = 3.0 mT typ. Typ. 1.8 1.8 3.6 Max. 3.3 0.3  Unit mT mT mT Test Circuit 4 4 4 W 2. Symbol BOP BRP BHYS DE SI G (Ta = 25C, VDD = 12.0 V, VSS = 0 V unless otherwise specified) Table 7 2. Condition   BHYS = BOP  BRP Min. 1.5 4.5  R Symbol BOP BRP BHYS Typ. 3.0 3.0 6.0 Max. 4.5 1.5  FO Item Operation point*1 S pole Release point*2 N pole Hysteresis width*3 NE (Ta = 25C, VDD = 12.0 V, VSS = 0 V unless otherwise specified) Product with BOP = 6.0 mT typ. Unit mT mT mT Test Circuit 4 4 4 Table 8 The unit of magnetic density mT can be converted by using the formula 1 mT = 10 Gauss. NO T RE Remark CO MM EN DE D (Ta = 25C, VDD = 12.0 V, VSS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point*1  3.0 6.0 9.0 mT 4 S pole BOP Release point*2  9.0 6.0 3.0 mT 4 N pole BRP *3 Hysteresis width BHYS = BOP  BRP  12.0  mT 4 BHYS *1. BOP: Operation point BOP is the value of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density applied to the S-5741 Series by the magnet (S pole) is increased (by moving the magnet closer). VOUT retains the status until a magnetic flux density of the N pole higher than BRP is applied. *2. BRP: Release point BRP is the value of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density applied to the S-5741 Series by the magnet (N pole) is increased (by moving the magnet closer). VOUT retains the status until a magnetic flux density of the S pole higher than BOP is applied. *3. BHYS: Hysteresis width BHYS is the difference of magnetic flux density between BOP and BRP. 6 HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_02 S-5741 Series  Test Circuits A N *1 DE SI G R 820  VDD S-5741 Series OUT Resistor (R) is unnecessary for the pull-up resistor built-in product. Figure 5 Test Circuit 1 NE *1. W VSS S-5741 Series OUT A VSS Test Circuit 2 MM EN Figure 6 DE D V FO R VDD VDD S-5741 Series OUT A VSS CO V NO T RE Figure 7 Test Circuit 3 *1. *1 VDD R 820  S-5741 Series OUT VSS V Resistor (R) is unnecessary for the pull-up resistor built-in product. Figure 8 Test Circuit 4 7 HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_02 S-5741 Series N  Standard Circuit *1 VDD DE SI G R 820  S-5741 Series OUT CIN 0.1 F W VSS NE *1. Resistor (R) is unnecessary for the pull-up resistor built-in product. Figure 9 NO T RE CO MM EN DE D FO R Caution The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. 8 HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_02 S-5741 Series  Operation Direction of applied magnetic flux W DE SI G The S-5741 Series detects the magnetic flux density which is vertical to the marking surface. Figure 10 shows the direction in which magnetic flux is being applied. N 1. NE N S DE D FO R Marking surface Figure 10 Position of Hall sensor MM EN 2. Figure 11 shows the position of Hall sensor. The center of this Hall sensor is located in the area indicated by a circle, which is in the center of a package as described below. The following also shows the distance (typ. value) between the marking surface and the chip surface of a package. The center of Hall sensor; in this  0.3 mm 1 2 3 NO T RE CO Top view 0.7 mm (typ.) Figure 11 9 HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_02 S-5741 Series 3. Basic operation 3. 1 DE SI G N The S-5741 Series changes the output voltage (VOUT) according to the level of the magnetic flux density and a polarity change (N pole or S pole) applied by a magnet. Definition of the magnetic field is performed every operating cycle indicated in " Electrical Characteristics". Product with VOUT = "L" at S pole detection W When the magnetic flux density of the S pole perpendicular to the marking surface exceeds the operation point (BOP) after the S pole of a magnet is moved closer to the marking surface of the S-5741 Series, VOUT changes from "H" to "L". When the N pole of a magnet is moved closer to the marking surface of the S-5741 Series and the magnetic flux density of the N pole is higher than the release point (BRP), VOUT changes from "L" to "H". In case of BRP  B  BOP, VOUT retains the status. Figure 12 shows the relationship between the magnetic flux density and VOUT. VOUT H FO R NE BHYS S pole 0 BOP DE BRP D N pole L Magnetic flux density (B) 3. 2 MM EN Figure 12 Product with VOUT = "H" at S pole detection CO When the magnetic flux density of the S pole perpendicular to the marking surface exceeds BOP after the S pole of a magnet is moved closer to the marking surface of the S-5741 Series, VOUT changes from "L" to "H". When the N pole of a magnet is moved closer to the marking surface of the S-5741 Series and the magnetic flux density of the N pole is higher than BRP, VOUT changes from "H" to "L". In case of BRP  B  BOP, VOUT retains the status. Figure 13 shows the relationship between the magnetic flux density and VOUT. VOUT BHYS NO T RE H L N pole S pole BRP 0 BOP Magnetic flux density (B) Figure 13 10 HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_02 S-5741 Series  Precautions N  If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by feedthrough current. Take care with the pattern wiring to ensure that the impedance of the power supply is low. DE SI G  Note that the IC may malfunction if the power supply voltage rapidly changes. When the IC is used under the environment where the power supply voltage rapidly changes, it is recommended to judge the output voltage of the IC by reading it multiple times.  Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit.  Although this IC has a built-in output current limit circuit, it may suffer physical damage such as product deterioration under the environment where the absolute maximum ratings are exceeded. W  The application conditions for the power supply voltage, the pull-up voltage, and the pull-up resistor should not exceed the package power dissipation. NE  Large stress on this IC may affect on the magnetic characteristics. Avoid large stress which is caused by bend and distortion during mounting the IC on a board or handle after mounting. NO T RE CO MM EN DE D FO R  ABLIC Inc. claims no responsibility for any disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. 11 N 2.9±0.2 2 DE SI G 1 3 +0.1 0.16 -0.06 0.95±0.1 FO R NE W 1.9±0.2 MM EN DE D 0.4±0.1 NO T RE CO No. MP003-C-P-SD-1.1 TITLE SOT233-C-PKG Dimensions No. MP003-C-P-SD-1.1 ANGLE UNIT mm ABLIC Inc. +0.1 4.0±0.1 2.0±0.1 +0.25 4.0±0.1 0.23±0.1 1.4±0.2 NE ø1.0 -0 W DE SI G N ø1.5 -0 1 3 MM EN 2 DE D FO R 3.2±0.2 CO Feed direction NO T RE No. MP003-C-C-SD-2.0 TITLE SOT233-C-Carrier Tape No. MP003-C-C-SD-2.0 ANGLE UNIT mm ABLIC Inc. FO R NE W DE SI G N 12.5max. D 9.2±0.5 DE Enlarged drawing in the central part CO MM EN ø13±0.2 NO T RE No. MP003-Z-R-SD-1.0 SOT233-C-Reel TITLE MP003-Z-R-SD-1.0 No. QTY. ANGLE UNIT mm ABLIC Inc. 3,000 Disclaimers (Handling Precautions) All the information described herein (product data, specifications, figures, tables, programs, algorithms and application circuit examples, etc.) is current as of publishing date of this document and is subject to change without notice. 2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of any specific mass-production design. ABLIC Inc. is not responsible for damages caused by the reasons other than the products described herein (hereinafter "the products") or infringement of third-party intellectual property right and any other right due to the use of the information described herein. 3. ABLIC Inc. is not responsible for damages caused by the incorrect information described herein. 4. Be careful to use the products within their specified ranges. Pay special attention to the absolute maximum ratings, operation voltage range and electrical characteristics, etc. ABLIC Inc. is not responsible for damages caused by failures and / or accidents, etc. that occur due to the use of the products outside their specified ranges. 5. When using the products, confirm their applications, and the laws and regulations of the region or country where they are used and verify suitability, safety and other factors for the intended use. 6. When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-related laws, and follow the required procedures. 7. The products must not be used or provided (exported) for the purposes of the development of weapons of mass destruction or military use. ABLIC Inc. is not responsible for any provision (export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons, missiles, or other military use. 8. The products are not designed to be used as part of any device or equipment that may affect the human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses. Do not apply the products to the above listed devices and equipments without prior written permission by ABLIC Inc. Especially, the products cannot be used for life support devices, devices implanted in the human body and devices that directly affect human life, etc. Prior consultation with our sales office is required when considering the above uses. ABLIC Inc. is not responsible for damages caused by unauthorized or unspecified use of our products. 9. Semiconductor products may fail or malfunction with some probability. The user of the products should therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction. The entire system must be sufficiently evaluated and applied on customer's own responsibility. MM EN DE D FO R NE W DE SI G N 1. 10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the product design by the customer depending on the intended use. CO 11. The products do not affect human health under normal use. However, they contain chemical substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be careful when handling these with the bare hands to prevent injuries, etc. 12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used. RE 13. The information described herein contains copyright information and know-how of ABLIC Inc. The information described herein does not convey any license under any intellectual property rights or any other rights belonging to ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of this document described herein for the purpose of disclosing it to a third-party without the express permission of ABLIC Inc. is strictly prohibited. NO T 14. For more details on the information described herein, contact our sales office. 2.0-2018.01 www.ablicinc.com
S-5741RBL0-M3T2U 价格&库存

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