Datasheet
V1.2
TMR1162
Nano-Ampere TMR Unipolar Switch
General Description
The TMR1162 is a 200nA ultra-low power magnetic switch sensor. It is a unipolar magnetic switch that integrates TMR and
CMOS technology in order to provide a magnetically triggered digital switch with high sensitivity, high speed, and ultra-low power
consumption. It integrates a push-pull half-bridge TMR magnetic sensor and CMOS signal processing circuitry within the same
package. Designed for use in applications that are both power-critical and performance-demanding, this device includes an
on-chip TMR voltage generator for precise magnetic sensing, TMR voltage amplifier and comparator, a Schmitt trigger to provide
switching hysteresis for noise rejection, and open-drain output. An internal band gap regulator is used to provide temperature
compensated supply voltage for internal circuits, and it allows a wide range of operating supply voltages. The TMR1162 features
ultra-low power consumption at 200nA with a fast internal switching frequency at 50Hz. Other important features include accurate
switching points, excellent thermal stability, and a wide range of supply voltages. It is available in two packaging form factors:
SOT23-3 (P/N TMR1162S), or TO-92S (P/N TMR1162T).
Features and Benefits
Tunneling Magnetoresistance (TMR) Technology
Nano-Ampere Ultra-low Power Consumption at 200nA
Fast Internal Switching Frequency at 50Hz
Unipolar Operation with High Sensitivity
Operating Temperature Range from -40C to 125C
Wide Range of Supply Voltages from 1.8V to 5.5V
Open-drain Output
Applications
Utility Meters including Water, Gas, and Heat Meters
TMR1162S (Left), TMR1162T (Right)
Speed Sensing and Position Sensing
Motor and Fan Control
Power Window
Block Diagram
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Datasheet
V1.2
Pin Configuration
Pin No.
Pin Name
TO-92S
TO-92S
SOT23-3
Pin Function
VOUT
1
2
Output
GND
2
3
Ground
VCC
3
1
Supply Voltage
SOT23-3
Absolute Maximum Ratings
Characteristic
Symbol
Rating
Units
Supply Voltage
VCC
7
V
Reverse Supply Voltage
VRCC
0.3
V
Output Current
IOUTSINK
20
mA
Magnetic Flux Density
B
4000
G
ESD Level (HBM)
VESD
4
kV
Operating Ambient Temperature
TA
-40~125
℃
Storage Temperature
Tstg
-50~150
℃
Electrical Characteristics (VCC=3.0V, TA=25°C)
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Supply Voltage
VCC
Operating
1.8
3.0
5.5
V
Output Stress Voltage
Vstress
5.5
V
Output leak Current
Ileak
OUT=High,Vcc=3V,Vout=3V
1
μA
Output Turn-off Resistance
Roff
OUT=High
Output Low Voltage
Vol
OUT=Low,Vcc=3V,Isink=3mA
0.1
V
Output Turn-on Resistance
Ron
OUT=Low
10
Ω
Supply Current
Icc
Output open
Switching Frequency
F
MΩ
10
200
nA
50
Hz
Note: A 1kOhm pull-up resistor is connected between VCC and VOUT, and a 0.1μF capacitor is connected between VCC and GND during all
tests in the table above.
Magnetic Characteristics (VCC = 3.0V, TA = 25°C)
Characteristic
Symbol
Min.
Typ.
Max.
Units
Operate Point
BOP
17
G
Release Point
BRP
13
G
Hysteresis
BH
4
G
Note: A 1kOhm pull-up resistor is connected between VCC and VOUT, and a 0.1μF capacitor is connected between VCC and GND during all
tests in the table above.
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Datasheet
V1.2
Voltage and Temperature Characteristics
Voltage Characteristics
25.0
Temperature Characteristics
25.0
OP/RP(GS)
OP/RP(GS)
20.0
15.0
10.0
5.0
OP
0.0
1.8
3
20.0
15.0
10.0
RP
5.0
0.0
-50
5.5
VCC(V)
OP
-25
0
25
50
75
Temperature(℃)
Output Behavior vs. Magnetic Polarity
Magnetic Polarity
Test Conditions
Output
B > BOP
Low (On)
B < BRP
High (Off)
B > BOP
Low (On)
B < BRP
High (Off)
South Pole for TO92 Package
North Pole for SOT23 Package
Note: The output is “High” when power is turned on under zero magnetic field.
Sensing Direction
Switching Behavior of TMR1162
Application Information
The output of the TMR1162 switches low (turns on) when a
magnetic field parallel to the TMR sensor exceeds the
operate point threshold, BOP. When the magnetic field is
reduced below the release point, BRP, the device output goes
high (turns off). The difference between the magnetic operate
point and release point is the hysteresis BH of the device.
It is strongly recommended that an external bypass capacitor
be connected in close proximity to the device between the
supply and ground to reduce noise. The typical value of the
external capacitor is 0.1μF.
3/5
RP
100
125
Datasheet
Package Information
SOT23-3 Package
TO-92S Package
TMR Sensor Position
Top and side view(unit: mm)
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V1.2
Datasheet
V1.2
MultiDimension Technology Co., Ltd.
Address: No.7 Guangdong Road, Zhangjiagang Free Trade Zone, Jiangsu, 215634, China
Web: www.dowaytech.com/en
Email: info@dowaytech.com
The information provided herein by MultiDimension Technology Co., Ltd. (hereinafter MultiDimension) is believed to be accurate and reliable.
Publication neither conveys nor implies any license under patent or other industrial or intellectual property rights. MultiDimension reserves the
right to make changes to product specifications for the purpose of improving product quality, reliability, and functionality. MultiDimension does not
assume any liability arising out of the application and use of its products. MultiDimension’s customers using or selling this product for use in
appliances, devices, or systems where malfunction can reasonably be expected to result in personal injury do so at their own risk and agree to
fully indemnify MultiDimension for any damages resulting from such applications.
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