HIN202E thru HIN241E
Semiconductor
Data Sheet
December 1998
+/-15kV, ESD-Protected, +5V Powered,
RS-232 Transmitters/Receivers
File Number
4315.3
Features
•
•
•
•
The HIN202E-HIN241E family of RS-232
transmitters/receivers interface circuits meet all ElA highspeed RS-232E and V.28 specifications, and are particularly
suited for those applications where ±12V is not available. A
redesigned transmitter circuit improves data rate and slew
rate, which makes this suitable for ISDN and high speed
modems. The transmitter outputs and receiver inputs are
protected to ±15kV ESD (Electrostatic Discharge). They
require a single +5V power supply and feature onboard
charge pump voltage converters which generate +10V and
-10V supplies from the 5V supply. The HIN203E, HIN205E,
HIN233E and HIN235E require no external capacitors and
are ideally suited for applications where circuit board space
is critical. The family of devices offers a wide variety of highspeed RS-232 transmitter/receiver combinations to
accommodate various applications (see Selection Table).
•
•
•
•
•
•
•
•
The HIN205E, HIN206E, HIN211E, HIN213E, HIN235E,
HIN236E, and HIN241E feature a low power shutdown mode
to conserve energy in battery powered applications. In
addition, the HIN213E provides two active receivers in
shutdown mode allowing for easy “wakeup” capability.
High Speed ISDN Compatible . . . . . . . . . . . . . .230kbits/s
ESD Protection for RS-232 I/O Pins to ±15kV (IEC1000)
Meets All RS-232E and V.28 Specifications
Requires Only 0.1µF or Greater External Capacitors
(HIN203E, HIN205E, HIN233E and HIN235E Require No
External Capacitors)
230kbit/s Data Rate
Two Receivers Active in Shutdown Mode (HIN213E)
Requires Only Single +5V Power Supply
Onboard Voltage Doubler/Inverter
Low Power Consumption (Typ). . . . . . . . . . . . . . . . . . 5mA
Low Power Shutdown Function (Typ) . . . . . . . . . . . . . 1µA
Three-State TTL/CMOS Receiver Outputs
Multiple Drivers
- ±10V Output Swing for +5V Input
- 300Ω Power-Off Source Impedance
- Output Current Limiting
- TTL/CMOS Compatible
- 30V/µs Maximum Slew Rate
• Multiple Receivers
- ±30V Input Voltage Range
- 3kΩ to 7kΩ Input Impedance
- 0.5V Hysteresis to Improve Noise Rejection
Applications
The drivers feature true TTL/CMOS input compatibility, slew
rate-limited output, and 300Ω power-off source impedance.
The receivers can handle up to ±30V input, and have a 3kΩ
to 7kΩ input impedance. The receivers also feature
hysteresis to greatly improve noise rejection.
• Any System Requiring High-Speed RS-232
Communications Port
- Computer - Portable, Mainframe, Laptop
- Peripheral - Printers and Terminals
- Instrumentation, UPS
- Modems
Selection Table
POWER SUPPLY
VOLTAGE
NUMBER OF
RS-232
DRIVERS
NUMBER OF
RS-232
RECEIVERS
NUMBER OF
0.1µF
EXTERNAL
CAPACITORS
LOW POWER
SHUTDOWN/TTL
THREE-STATE
NUMBER OF
RECEIVERS
ACTIVE IN
SHUTDOWN
HIN202E
+5V
2
2
4 Capacitors
No/No
0
HIN203E
+5V
2
2
None
No/No
0
HIN205E
+5V
5
5
None
Yes/Yes
0
HIN206E
+5V
4
3
4 Capacitors
Yes/Yes
0
HIN207E
+5V
5
3
4 Capacitors
No/No
0
HIN208E
+5V
4
4
4 Capacitors
No/No
0
HIN211E
+5V
4
5
4 Capacitors
Yes/Yes
0
HIN213E
+5V
4
5
4 Capacitors
Yes/Yes
2
HIN232E
+5V
2
2
4 Capacitors
No/No
0
HIN233E
+5V
2
2
None
No/No
0
HIN235E
+5V
5
5
None
Yes/Yes
0
HIN236E
+5V
4
3
4 Capacitors
Yes/Yes
0
HIN237E
+5V
5
3
4 Capacitors
No/No
0
HIN238E
+5V
4
4
4 Capacitors
No/No
0
HIN241E
+5V
4
5
4 Capacitors
Yes/Yes
0
PART
NUMBER
3-487
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1999
HIN202E thru HIN241E
Ordering Information
PART NO.
TEMP.
RANGE (oC)
PACKAGE
PKG. NO.
PART NO.
TEMP.
RANGE (oC)
PACKAGE
PKG. NO.
HIN202ECA
0 to 70
16 Ld SSOP
M16.209
HIN208EIP
-40 to 85
24 Ld PDIP
E24.3
HIN202ECB
0 to 70
16 Ld SOIC
M16.3
HIN211ECA
0 to 70
28 Ld SSOP
M28.209
HIN202ECBN
0 to 70
16 Ld SOIC
M16.15
HIN211ECA-T
0 to 70
Tape and Reel
HIN202ECP
0 to 70
16 Ld PDIP
E16.3
HIN211ECB
0 to 70
28 Ld SOIC
M28.3
HIN202EIB
-40 to 85
16 Ld SOIC
M16.3
HIN211EIA
-40 to 85
28 Ld SSOP
M28.209
HIN202EIB-T
-40 to 85
Tape and Reel
HIN211EIB
-40 to 85
28 Ld SOIC
M28.3
HIN202EIBN
-40 to 85
16 Ld SOIC
M16.15
HIN213ECA
0 to 70
24 Ld SSOP
M28.209
HIN202EIP
-40 to 85
16 Ld PDIP
E16.3
HIN213ECA-T
0 to 70
Tape and Reel
HIN203ECB
0 to 70
20 Ld SOIC
M20.3
HIN213ECB
0 to 70
28 Ld SOIC
M28.3
HIN203ECP
0 to 70
20 Ld PDIP
E20.3
HIN213EIA
-40 to 85
28 Ld SSOP
M28.209
HIN205ECP
0 to 70
24 Ld PDIP
E24.6
HIN213EIB
-40 to 85
28 Ld SOIC
M28.3
HIN206ECA
0 to 70
24 Ld SSOP
M24.209
HIN232ECA
0 to 70
16 Ld SSOP
M16.209
HIN206ECB
0 to 70
24 Ld SOIC (W)
M24.3
HIN232ECB
0 to 70
16 Ld SOIC
M16.3
HIN206ECB-T
0 to 70
Tape and Reel
HIN232ECBN
0 to 70
16 Ld SOIC (N)
M16.15
HIN206ECP
0 to 70
24 Ld PDIP
E24.3
HIN232ECP
0 to 70
16 Ld PDIP
E16.3
HIN206EIA
-40 to 85
24 Ld SSOP
M24.209
HIN233ECB
0 to 70
20 Ld SOIC
M20.3
HIN206EIB
-40 to 85
24 Ld SOIC (W)
M24.3
HIN233ECP
0 to 70
20 Ld PDIP
E20.3
HIN206EIP
-40 to 85
24 Ld PDIP
E24.3
HIN235ECP
0 to 70
24 Ld PDIP
E24.6
HIN207ECA
0 to 70
24 Ld SSOP
M24.209
HIN236ECA
0 to 70
24 Ld SSOP
M24.209
HIN207ECA-T
0 to 70
Tape and Reel
HIN236ECB
0 to 70
24 Ld SOIC (W)
M24.3
HIN207ECB
0 to 70
24 Ld SOIC
HIN236ECB-T
0 to 70
Tape and Reel
HIN207ECB-T
0 to 70
Tape and Reel
HIN236ECP
0 to 70
24 Ld PDIP
E24.3
HIN207ECP
0 to 70
24 Ld PDIP
E24.3
HIN237ECA
0 to 70
24 Ld SSOP
M24.209
HIN207EIA
-40 to 85
24 Ld SSOP
M24.209
HIN237ECA-T
0 to 70
Tape and Reel
HIN207EIB
-40 to 85
24 Ld SOIC (W)
M24.3
HIN237ECB
0 to 70
24 Ld SOIC
HIN207EIP
-40 to 85
24 Ld PDIP
E24.3
HIN237ECB-T
0 to 70
Tape and Reel
HIN208ECA
0 to 70
24 Ld SSOP
M24.209
HIN237ECP
0 to 70
24 Ld PDIP
E24.3
HIN208ECA-T
0 to 70
Tape and Reel
HIN238ECA
0 to 70
24 Ld SSOP
M24.209
HIN208ECB
0 to 70
24 Ld SOIC
HIN238ECA-T
0 to 70
Tape and Reel
HIN208ECB-T
0 to 70
Tape and Reel
HIN238ECB
0 to 70
24 Ld SOIC
HIN208ECP
0 to 70
24 Ld PDIP
E24.3
HIN238ECB-T
0 to 70
Tape and Reel
HIN208EIA
-40 to 85
24 Ld SSOP
M24.209
HIN238ECP
0 to 70
24 Ld PDIP
E24.3
HIN208EIB
-40 to 85
24 Ld SOIC
M24.3
HIN241ECA
0 to 70
28 Ld SSOP
M28.209
HIN241ECB
0 to 70
28 Ld SOIC
M28.3
HIN208EIB-T
0 to 70
Tape and Reel
3-488
M24.3
M24.3
M24.3
M24.3
HIN202E thru HIN241E
Pinouts
HIN202E (PDIP, SOIC)
TOP VIEW
C1+ 1
V+ 2
HIN203E (PDIP, SOIC)
TOP VIEW
16 VCC
T2IN
1
20 R2OUT
15 GND
T1IN
2
19 R2IN
R1OUT
3
18 T2OUT
C1- 3
14 T1OUT
C2+ 4
13 R1IN
12 R1OUT
C2- 5
6
11 T1IN
T2OUT 7
10 T2IN
V-
9 R2OUT
R2IN 8
R1IN
4
17 V-
T1OUT
5
16 C2-
GND
6
15 C2+
VCC
7
14 V+ (C1-)
(V+) C1+
8
13 C1- (C1+)
GND
9
12 V- (C2+)
(V-) C2- 10
11 C2+ (C2-)
NOTE: Pin numbers in parentheses are for SOIC Package.
+5V
+5V
+
16
1
0.1µF
+
3
4
0.1µF
T1IN
T2IN
+
5
C1+
C1C2+
C2-
7
VCC
+5V TO 10V
VOLTAGE INVERTER
V+
2
VCC
0.1µF
+5V
T1IN
2
400kΩ
+5V
+10V TO -10V
VOLTAGE INVERTER
1
V- 6
+
T1
11
+5V
400kΩ
+5V
400kΩ
T2
10
14
7
12
0.1µF
8
5kΩ
R2
15
3-489
T2
18
T2OUT
R2OUT
T2OUT
R2IN
R1IN
5kΩ
R2IN
8 (13)
NO 13 (14)
CONNECT
INTERNAL
-10V
SUPPLY
INTERNAL
+10V
SUPPLY
19
20
12 (10)
17
14 (8)
5kΩ
C1+
C1-
11 (12)
15
16
V-
C2-
VV+
C2+
C2+
C2GND
6
GND
T1OUT
4
T1OUT
5kΩ
9
5
3
R1IN
R1
400kΩ
T2IN
T1
R1OUT
13
R1OUT
R2OUT
+
0.1µF
GND
9
10 (11)
HIN202E thru HIN241E
Pinouts
(Continued)
HIN205E (PDIP)
TOP VIEW
HIN206E (PDIP, SOIC, SSOP)
TOP VIEW
T4OUT 1
24 R3IN
T3OUT
1
24 T4OUT
T3OUT 2
23 R3OUT
T1OUT
2
23 R2IN
T1OUT 3
22 T5IN
T2OUT
3
22 R2OUT
T2OUT 4
21 SD
R1IN
4
21 SD
R2IN 5
20 EN
R1OUT
5
20 EN
19 T5OUT
T2IN
6
19 T4IN
T2IN 7
18 R4IN
T1IN
7
18 T3IN
T1IN 8
17 R4OUT
GND
8
17 R3OUT
R1OUT 9
16 T4IN
VCC
9
16 R3IN
C1+ 10
R2OUT 6
R1IN 10
15 T3IN
GND 11
14 R5OUT
VCC 12
13 R5IN
14 C2-
C1- 12
13 C2+
+5V
+5V
12
VCC
+5V
T1IN
T2IN
T3IN
T4IN
T5IN
R1OUT
400kΩ
7
+5V
400kΩ
T2
15
+5V
400kΩ
T3
16
22
+5V
400kΩ
+
T1
8
+5V
400kΩ
3
4
2
9
0.1µF
0.1µF
T1OUT
0.1µF
T2OUT
T3OUT
T1IN
10
C1+
+
12
C113
C2+
+
14
C2-
1
T4OUT
T2IN
10
9
T5OUT
T4IN
5
R2IN
5kΩ
R2
23
5kΩ
17
18
R4IN
5kΩ
R4
+5V
400kΩ
T2
18
+5V
400kΩ
T3
+5V
400kΩ
T4
19
2
3
1
24
R5IN
5kΩ
R5
21
EN
SD
GND
11
0.1µF
T1OUT
T2OUT
T3OUT
T4OUT
R1IN
5kΩ
22
23
R2IN
R2OUT
5kΩ
17
16
R3IN
R3OUT
5kΩ
R3
21
SD
EN
13
0.1µF
4
R1OUT
20
14
R5OUT
+
+
R2
R4OUT
3-490
V- 15
5
24
R3IN
20
+10V TO -10V
VOLTAGE INVERTER
R1
R3OUT
R3
+5V TO 10V
VOLTAGE DOUBLER
6
R1IN
5kΩ
6
T3IN
11
V+
T1
T5
19
VCC
+5V
400kΩ
7
T4
R1
R2OUT
15 V-
V+ 11
GND
8
HIN202E thru HIN241E
Pinouts
(Continued)
HIN207E (PDIP, SOIC, SSOP)
TOP VIEW
T3OUT
T1OUT
T2OUT
R1IN
R1OUT
T2IN
T1IN
GND
VCC
HIN208E (PDIP, SOIC, SSOP)
TOP VIEW
T2OUT
1
24 T3OUT
T1OUT
2
23 R3IN
R2IN
3
22 R3OUT
R2OUT
4
21 T4IN
T1IN
5
20 T4OUT
R1OUT
6
19 T3IN
R1IN
7
18 T2IN
GND
8
17 R4OUT
VCC
9
16 R4IN
24 T4OUT
1
23 R2IN
2
22 R2OUT
3
21 T5IN
4
20 T5OUT
5
19 T4IN
6
18 T3IN
7
17 R3OUT
8
16 R3IN
9
C1+ 10
15 V14 C2-
V+ 11
13 C2+
C1- 12
15 V-
C1+ 10
V+ 11
14 C2-
C1- 12
13 C2+
+5V
+5V
9
9
0.1µF
0.1µF
T1IN
T2IN
T3IN
T4IN
T5IN
10
C1+
+
12
C113
C2+
+
14
C2-
VCC
V+
+10V TO -10V
VOLTAGE INVERTER
V- 15
+5V
400kΩ
T1
+5V
400kΩ
T2
6
+5V
400kΩ
18
T3
21
+5V
400kΩ
+5V
400kΩ
+
0.1µF
0.1µF
+
7
19
11
+5V TO 10V
VOLTAGE DOUBLER
0.1µF
2
3
1
0.1µF
T1OUT
T2OUT
T3OUT
T4
24
T4OUT
T1IN
T2IN
T3IN
T4IN
VCC
11
+5V TO 10V
VOLTAGE DOUBLER
V+
+10V TO -10V
VOLTAGE INVERTER
V- 15
20
5
T1
+5V
400kΩ
T2
18
19
+5V
400kΩ
T3
+5V
400kΩ
21
T4
2
1
24
20
6
R1IN
22
4
R2IN
17
22
5kΩ
R3
GND
23
R3IN
R3OUT
5kΩ
17
R3IN
16
R4IN
R4OUT
5kΩ
R4
GND
8
T4OUT
5kΩ
R3
16
R3OUT
T3OUT
R2IN
5kΩ
R2
T2OUT
3
R2OUT
23
T1OUT
5kΩ
R2
R2OUT
0.1µF
R1IN
5kΩ
R1
0.1µF
7
R1
T5OUT
4
R1OUT
+
+
+5V
400kΩ
5
R1OUT
T5
3-491
10
C1+
+
12
C113
C2+
+
14
C2-
8
HIN202E thru HIN241E
Pinouts
(Continued)
HIN211E (SOIC, SSOP)
TOP VIEW
T3OUT 1
T1OUT 2
T2OUT 3
HIN213E (SOIC, SSOP)
TOP VIEW
28 T4OUT
T3OUT 1
28 T4OUT
27 R3IN
T1OUT 2
27 R3IN
26 R3OUT
T2OUT 3
26 R3OUT
R2IN 4
25 SD
R2IN 4
25 SD
R2OUT 5
24 EN
R2OUT 5
24 EN
T2IN 6
T1IN 7
23 R4IN
T2IN 6
23 R4IN
22 R4OUT
T1IN 7
22 R4OUT
R1OUT 8
21 T4IN
R1OUT 8
21 T4IN
R1IN 9
20 T3IN
R1IN 9
20 T3IN
19 R5OUT
GND 10
19 R5OUT
VCC 11
18 R5IN
VCC 11
18 R5IN
C1+ 12
17 V-
C1+ 12
17 V-
GND 10
V+ 13
16 C2-
V+ 13
16 C2-
C1- 14
15 C2+
C1- 14
15 C2+
NOTE: R4 and R5 active in shutdown.
+5V
+5V
11
0.1µF
0.1µF
T1IN
T2IN
T3IN
T4IN
R1OUT
12
C1+
+
14
C115
C2+
+
16
C2-
VCC
13
+5V TO 10V
VOLTAGE DOUBLER
V+
+10V TO -10V
VOLTAGE INVERTER
V- 17
+
0.1µF
0.1µF
+
+5V
400kΩ
7
T1
+5V
400kΩ
T2
6
20
+5V
400kΩ
T3
21
+5V
400kΩ
T4
2
3
1
28
9
8
0.1µF
T1OUT
T1IN
T2OUT
T2IN
T3OUT
T3IN
T4OUT
T4IN
R1IN
R1OUT
5
4
26
+5V
400kΩ
T2
6
20
+5V
400kΩ
T3
21
+5V
400kΩ
T4
5kΩ
27
R3IN
5kΩ
23
R4IN
5kΩ
19
18
R5IN
R5OUT
24
SD
5kΩ
R5
25
EN
GND
10
R1IN
4
R4
25
GND
9
5kΩ
R2IN
5kΩ
EN
T4OUT
R4OUT
18
R5
T3OUT
28
22
R5IN
T2OUT
1
8
5kΩ
R5OUT
T1OUT
3
26
R4IN
0.1µF
2
R3
R4OUT
0.1µF
R3OUT
23
19
+
T1
5kΩ
R4
V- 17
R2
R3IN
R3
+10V TO -10V
VOLTAGE INVERTER
+
R2OUT
27
22
V+
+5V
400kΩ
7
5kΩ
R3OUT
13
+5V TO 10V
VOLTAGE DOUBLER
5
R2IN
R2
VCC
R1
R2OUT
3-492
12
C1+
+
14
C115
C2+
+
16
C2-
5kΩ
R1
24
11
0.1µF
10
SD
HIN202E thru HIN241E
Pinouts
(Continued)
HIN232E (PDIP, SOIC)
TOP VIEW
HIN233E (PDIP, SOIC)
TOP VIEW
C1+ 1
16 VCC
T2IN
1
V+ 2
15 GND
T1IN
2
19 R2IN
R1OUT
3
18 T2OUT
C1- 3
14 T1OUT
C2+ 4
13 R1IN
12 R1OUT
C2- 5
6
11 T1IN
T2OUT 7
10 T2IN
V-
9 R2OUT
R2IN 8
20 R2OUT
R1IN
4
17 V-
T1OUT
5
16 C2-
GND
6
15 C2+
VCC
7
14 V+ (C1-)
(V+) C1+
8
13 C1- (C1+)
GND
9
12 V- (C2+)
(V-) C2- 10
11 C2+ (C2-)
NOTE: Pin numbers in parentheses are for SOIC Package.
+5V
+
+5V
0.1µF
7
16
1
0.1µF
+
3
4
0.1µF
T1IN
+
5
11
C1+
C1C2+
C2-
VCC
+5V TO 10V
VOLTAGE INVERTER
V+
2
+
T1IN
T2IN
400kΩ
1
+10V TO -10V
VOLTAGE INVERTER
+5V
400kΩ
T1
14
+5V
400kΩ
0.1µF
T1OUT
8
5kΩ
R2
GND
15
3-493
T2
18
T2OUT
4
R1IN
T2OUT
R2IN
NO 13 (14)
CONNECT
R2IN
INTERNAL
-10V
SUPPLY
INTERNAL
+10V
SUPPLY
19
20
8 (13)
R1IN
9
T1OUT
5kΩ
5kΩ
R1
5
3
13
R1OUT
T1
R1OUT
T2
7
400kΩ
T2IN
V- 6
+
12
R2OUT
2
+5V
R2OUT
10
VCC
+5V
0.1µF
12 (10)
17
14 (8)
5kΩ
C1+
C1-
C2+
15
16
V-
C2-
VV+
C2+
11 (12)
C2GND
6
GND
9
10 (11)
HIN202E thru HIN241E
Pinouts
(Continued)
HIN235E (PDIP)
TOP VIEW
HIN236E (PDIP, SOIC, SSOP)
TOP VIEW
T4OUT 1
24 R3IN
T3OUT
1
24 T4OUT
T3OUT 2
23 R3OUT
T1OUT
2
23 R2IN
T1OUT 3
22 T5IN
T2OUT
3
22 R2OUT
T2OUT 4
21 SD
R1IN
4
21 SD
R2IN 5
20 EN
R1OUT
5
20 EN
19 T5OUT
T2IN
6
19 T4IN
T2IN 7
18 R4IN
T1IN
7
18 T3IN
T1IN 8
17 R4OUT
GND
8
17 R3OUT
R1OUT 9
16 T4IN
VCC
9
16 R3IN
C1+ 10
R2OUT 6
R1IN 10
15 T3IN
GND 11
14 R5OUT
VCC 12
13 R5IN
14 C2-
C1- 12
13 C2+
+5V
+5V
12
VCC
+5V
T1IN
T2IN
T3IN
T4IN
T5IN
R1OUT
+
T1
8
400kΩ
7
+5V
400kΩ
T2
15
+5V
400kΩ
T3
16
+5V
400kΩ
T4
22
+5V
400kΩ
T5
3
4
2
0.1µF
T1OUT
T2OUT
9
0.1µF
0.1µF
T3OUT
T1IN
1
19
10
9
R1IN
T3IN
6
T4IN
R2IN
5kΩ
R2
23
17
18
+5V
400kΩ
T3
+5V
400kΩ
19
T4
R5IN
5kΩ
R5
SD
11
3-494
24
0.1µF
T1OUT
T2OUT
T3OUT
T4OUT
4
5kΩ
22
23
R2IN
5kΩ
17
16
R3IN
5kΩ
R3
21
SD
EN
GND
21
GND
1
0.1µF
R1IN
20
13
EN
3
R3OUT
R5OUT
20
+5V
400kΩ
T2
6
2
R1OUT
R4IN
+
+
R2
5kΩ
14
V- 15
R2OUT
18
R4
+10V TO -10V
VOLTAGE INVERTER
5
R3IN
R4OUT
V+
R1
5kΩ
R3
11
+5V TO 10V
VOLTAGE DOUBLER
T1
24
R3OUT
VCC
+5V
400kΩ
7
T5OUT
5kΩ
5
10
C1+
+
12
C113
C2+
+
14
C2-
T4OUT
T2IN
R1
R2OUT
15 V-
V+ 11
8
HIN202E thru HIN241E
Pinouts
(Continued)
HIN237E (PDIP, SOIC, SSOP)
TOP VIEW
T3OUT
T1OUT
T2OUT
HIN238E (PDIP, SOIC, SSOP)
TOP VIEW
24 T4OUT
1
23 R2IN
2
4
21 T5IN
R1OUT
5
20 T5OUT
T1IN
GND
VCC
8
9
C1+ 10
V+ 11
C1- 12
19 T3IN
18 T2IN
17 R3OUT
GND 8
17 R4OUT
16 R3IN
VCC 9
16 R4IN
15 V-
C1+ 10
15 V-
14 C2-
V+ 11
14 C2-
13 C2+
C1- 12
13 C2+
+5V
9
9
0.1µF
0.1µF
T1IN
T2IN
T3IN
T4IN
T5IN
VCC
V+
+10V TO -10V
VOLTAGE INVERTER
V- 15
T1
+5V
400kΩ
T2
6
18
+5V
400kΩ
T3
+5V
400kΩ
+5V
400kΩ
+
2
3
1
0.1µF
0.1µF
0.1µF
+
+5V
400kΩ
21
11
+5V TO 10V
VOLTAGE DOUBLER
7
19
20 T4OUT
R1IN 7
+5V
10
C1+
+
12
C113
C2+
+
14
C2-
21 T4IN
T1IN 5
18 T3IN
7
22 R3OUT
R1OUT 6
19 T4IN
6
23 R3IN
R2OUT 4
R1IN
T2IN
24 T3OUT
T1OUT 2
R2IN 3
22 R2OUT
3
T2OUT 1
0.1µF
T1OUT
T2OUT
T3OUT
T4
24
T4OUT
T1IN
T2IN
T3IN
T4IN
VCC
11
+5V TO 10V
VOLTAGE DOUBLER
V+
+10V TO -10V
VOLTAGE INVERTER
V- 15
20
5
T1
+5V
400kΩ
T2
18
19
+5V
400kΩ
T3
+5V
400kΩ
21
T4
2
1
24
20
6
R1IN
R1OUT
5kΩ
R1
22
R2IN
5kΩ
R2
17
4
5kΩ
R3
GND
T4OUT
R2IN
22
23
R3IN
R3OUT
5kΩ
17
16
R4IN
R4OUT
5kΩ
R4
GND
8
T3OUT
5kΩ
R3
R3IN
T2OUT
3
R2OUT
16
R3OUT
T1OUT
5kΩ
R2
R2OUT
0.1µF
7
R1
23
0.1µF
R1IN
T5OUT
4
+
+
+5V
400kΩ
5
R1OUT
T5
3-495
10
C1+
+
12
C113
C2+
+
14
C2-
8
HIN202E thru HIN241E
Pinouts
(Continued)
HIN241E (SOIC, SSOP)
TOP VIEW
T3OUT 1
28 T4OUT
T1OUT 2
27 R3IN
T2OUT 3
26 R3OUT
R2IN 4
25 SD
R2OUT 5
24 EN
T2IN 6
23 R4IN
T1IN 7
22 R4OUT
R1OUT 8
21 T4IN
R1IN 9
20 T3IN
GND 10
19 R5OUT
+5V
11
0.1µF
0.1µF
T1IN
T2IN
T3IN
18 R5IN
VCC 11
17 V-
C1+ 12
T4IN
16 C2-
V+ 13
15 C2+
C1- 14
R1OUT
12
C1+
+
14
C115
C2+
+
16
C2-
VCC
13
+5V TO 10V
VOLTAGE DOUBLER
V+
+10V TO -10V
VOLTAGE INVERTER
V- 17
+
+
+5V
400kΩ
7
T1
+5V
400kΩ
T2
6
20
+5V
400kΩ
T3
+5V
400kΩ
21
T4
2
3
1
28
9
8
0.1µF
0.1µF
T1OUT
T2OUT
T3OUT
T4OUT
R1IN
5kΩ
R1
5
4
R2IN
R2OUT
5kΩ
R2
26
27
R3IN
R3OUT
5kΩ
R3
22
23
R4IN
R4OUT
5kΩ
R4
19
18
R5IN
R5OUT
24
EN
5kΩ
R5
25
SD
GND
10
Pin Descriptions
PIN
VCC
FUNCTION
Power Supply Input 5V ±10%, 5V ±5% (HIN233E, HIN235E, and HIN237E).
V+
Internally generated positive supply (+10V nominal).
V-
Internally generated negative supply (-10V nominal).
GND
Ground lead. Connect to 0V.
C1+
External capacitor (+ terminal) is connected to this lead.
C1-
External capacitor (- terminal) is connected to this lead.
C2+
External capacitor (+ terminal) is connected to this lead.
C2-
External capacitor (- terminal) is connected to this lead.
TIN
Transmitter Inputs. These leads accept TTL/CMOS levels. An internal 400kΩ pull-up resistor to VCC is connected to each lead.
TOUT
RIN
ROUT
EN
SD, SD
NC
Transmitter Outputs. These are RS-232 levels (nominally ±10V).
Receiver Inputs. These inputs accept RS-232 input levels. An internal 5kΩ pull-down resistor to GND is connected to each input.
Receiver Outputs. These are TTL/CMOS levels.
Enable input. This is an active low input which enables the receiver outputs. With EN = 5V, the outputs are placed in a high
impedance state.
Shutdown Input. With SD = 5V (HIN213E SD = 0V), the charge pump is disabled, the receiver outputs are in a high impedance
state (except R4 and R5 of HIN241E) and the transmitters are shut off.
No Connect. No connections are made to these leads.
3-496
HIN202E thru HIN241E
Absolute Maximum Ratings
Thermal Information
VCC to Ground. . . . . . . . . . . . . . . . . . . . . . (GND -0.3V) < VCC < 6V
V+ to Ground . . . . . . . . . . . . . . . . . . . . . . . .(VCC -0.3V) < V+ < 12V
V- to Ground. . . . . . . . . . . . . . . . . . . . . . . . -12V < V- < (GND +0.3V)
Input Voltages
TIN . . . . . . . . . . . . . . . . . . . . . . . . . (V- -0.3V) < VIN < (V+ +0.3V)
RIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Output Voltages
TOUT . . . . . . . . . . . . . . . . . . . .(V- -0.3V) < VTXOUT < (V+ +0.3V)
ROUT . . . . . . . . . . . . . . . . . (GND -0.3V) < VRXOUT < (V+ +0.3V)
Short Circuit Duration
TOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Continuous
ROUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Continuous
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance (Typical, Note 1)
θJA (oC/W)
16 Ld SOIC (N) Package . . . . . . . . . . . . . . . . . . . . .
115
16 Ld SOIC (W) Package. . . . . . . . . . . . . . . . . . . . .
100
16 Ld SSOP Package . . . . . . . . . . . . . . . . . . . . . . .
155
16 Ld PDIP Package . . . . . . . . . . . . . . . . . . . . . . . .
90
20 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
100
24 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
75
24 Ld SSOP Package . . . . . . . . . . . . . . . . . . . . . . .
135
24 Ld PDIP (N) Package . . . . . . . . . . . . . . . . . . . . .
75
24 Ld PDIP (W) Package . . . . . . . . . . . . . . . . . . . . .
60
28 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
70
28 Ld SSOP Package . . . . . . . . . . . . . . . . . . . . . . .
100
Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300oC
(SOIC and SSOP - Lead Tips Only)
Operating Conditions
Temperature Range
HIN-XXXCX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 70oC
HIN-XXXIX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
Test Conditions: VCC = +5V ±10%, (VCC = +5V ±5% HIN202E, HIN203E, HIN205E, HIN232E, HIN233E,
HIN235E, HIN237E); C1-C4 = 0.1µF; TA = Operating Temperature Range
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
±5
±9
±10
V
HIN202E, HIN203E, HIN232E,
HIN233E
-
8
15
mA
HIN202E - HIN208E, HIN211E,
HIN213E, HIN234E - HIN238E,
HIN241E
-
11
20
mA
HIN205E, HIN206E, HIN211E,
HIN235E, HIN236E, HIN241E
-
1
10
µA
HIN213E
-
15
50
µA
-
-
0.8
V
Output Voltage Swing, TOUT
Transmitter Outputs, 3kΩ to Ground
Power Supply Current, ICC
No Load,
TA = 25oC
Shutdown Supply Current, ICC(SD)
TA = 25oC
Input Logic Low, TIN, EN, VlL
TIN , EN, SD, EN, SD
Input Logic High, VlH
TIN
2.0
-
-
V
EN, SD, EN, SD
2.4
-
-
V
-
15
200
µA
-30
-
+30
V
3.0
5.0
7.0
kΩ
Logic Pullup Current, IP
TIN = 0V
RS-232 Input Voltage Range, VIN
Receiver Input Impedance, RIN
TA = 25oC, VIN = ±3V
Receiver Input Low Threshold, VIN (H-L)
VCC = 5V,
TA = 25oC
Active Mode
-
1.2
-
V
Shutdown Mode HIN213E R4 and R5
-
1.5
-
V
VCC = 5V,
TA = 25oC
Active Mode
-
1.7
2.4
V
Shutdown Mode HIN213E R4 and R5
-
1.5
2.4
V
0.2
0.5
1.0
V
-
0.1
0.4
V
3.5
4.6
-
V
Receiver Input High Threshold, VIN (L-H)
Receiver Input Hysteresis, VHYST
VCC = 5V, No Hysteresis in Shutdown Mode
TTL/CMOS Receiver Output Voltage Low, VOL
IOUT = 1.6mA (HIN202E, HIN203E, HIN232E,
HIN233E IOUT = 3.2mA)
TTL/CMOS Receiver Output Voltage High, VOH
IOUT = -1mA
3-497
HIN202E thru HIN241E
Test Conditions: VCC = +5V ±10%, (VCC = +5V ±5% HIN202E, HIN203E, HIN205E, HIN232E, HIN233E,
HIN235E, HIN237E); C1-C4 = 0.1µF; TA = Operating Temperature Range (Continued)
Electrical Specifications
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Output Enable Time, tEN
HIN205E, HIN206E, HIN211E, HIN213E, HIN235E,
HIN236E, HIN241E
-
600
-
ns
Output Disable Time, tDIS
HIN205E, HIN206E, HIN211E, HIN213E, HIN235E,
HIN236E, HIN241E
-
200
-
ns
Transmit, Receive Propagation Delay, tPD
HIN213E SD = 0V, R4, R5
-
4.0
40
µs
HIN213E SD = VCC , R1 - R5
-
0.5
10
µs
All except HIN213E
-
0.5
10
µs
Transmit Transition Region Slew Rate, SRT
RL = 3kΩ, CL = 1000pF Measured from +3V to -3V
or -3V to +3V (Note 2)
3
20
45
V/µs
Output Resistance, ROUT
VCC = V+ = V- = 0V, VOUT = ±2V
300
-
-
Ω
RS-232 Output Short Circuit Current, ISC
TOUT Shorted to GND
-
±10
-
mA
TTL/CMOS Receiver Output Leakage
EN = VCC , EN = 0, 0V < ROUT < VCC
-
0.5
±10
µA
ESD Performance
-
-
-
-
-
ESD Protection
Human Body Model
±15
-
-
kV
TIN , ROUT
IEC1000-4-2 Contact Discharge
±8
-
-
kV
IEC1000-4-2 Air Gap (Note 3)
±15
-
-
kV
Human Body Model
±2
-
-
kV
TIN , ROUT
NOTES:
2. Guaranteed by design.
3. Meets Level 4 with the exception of HIN205E T5OUT = ±12kV.
Test Circuits (HIN232E)
+4.5V TO
+5.5V INPUT
-
0.1µF
C3
0.1µF
C1
+
+
-
0.1µF +
C2 -
-
+
0.1µF C4
3kΩ
1 C1+
VCC 16
2 V+
GND 15
T1OUT 14
4 C2+
R1IN 13
RS-232 ±30V INPUT
5 C2-
R1OUT 12
TTL/CMOS OUTPUT
T1 OUTPUT
6 V-
T1IN 11
TTL/CMOS INPUT
7 T2OUT
T2IN 10
TTL/CMOS INPUT
R2OUT 9
VCC 16
2 V+
GND 15
3 C1-
T1OUT 14
4 C2+
R1IN 13
5 C2-
R1OUT 12
3kΩ
3 C1-
8 R2IN
1 C1+
TTL/CMOS OUTPUT
T2
OUTPUT
6 V7 T2OUT
8 R2IN
ROUT = VIN /I
T1IN 11
T2IN 10
R2OUT 9
T2OUT
T1OUT
VIN = ±2V
A
RS-232
±30V INPUT
FIGURE 1. GENERAL TEST CIRCUIT
3-498
FIGURE 2. POWER-OFF SOURCE RESISTANCE
CONFIGURATION
HIN202E thru HIN241E
VOLTAGE DOUBLER
S1
VOLTAGE INVERTER
S2
C1+
V+ = 2VCC
S5
C2+
S6
VCC
GND
+
GND
S3
C1-
+
C1
-
+
C3
VCC
S4
+
C2
-
C4
GND
C2-
S7
V- = - (V+)
S8
RC
OSCILLATOR
FIGURE 3. CHARGE PUMP
Detailed Description
The HIN202E thru HIN241E family of high-speed RS-232
transmitters/receivers are powered by a single +5V power
supply, feature low power consumption, and meet all ElA
RS232C and V.28 specifications. The circuit is divided into
three sections: the charge pump, transmitter, and receiver.
Charge Pump
An equivalent circuit of the charge pump is illustrated in
Figure 3. The charge pump contains two sections: the
voltage doubler and the voltage inverter. Each section is
driven by a two phase, internally generated clock to generate
+10V and -10V. The nominal clock frequency is 125kHz.
During phase one of the clock, capacitor C1 is charged to
VCC . During phase two, the voltage on C1 is added to VCC ,
producing a signal across C3 equal to twice VCC . During
phase two, C2 is also charged to 2VCC , and then during
phase one, it is inverted with respect to ground to produce a
signal across C4 equal to -2VCC . The charge pump accepts
input voltages up to 5.5V. The output impedance of the
voltage doubler section (V+) is approximately 200Ω, and the
output impedance of the voltage inverter section (V-) is
approximately 450Ω. A typical application uses 0.1µF
capacitors for C1-C4, however, the value is not critical.
Increasing the values of C1 and C2 will lower the output
impedance of the voltage doubler and inverter, increasing
the values of the reservoir capacitors, C3 and C4, lowers the
ripple on the V+ and V- supplies.
During shutdown mode (HIN202E, HIN203E, HIN205E,
HIN206E, HIN211E, HIN213E, HIN232E, HIN233E,
HIN235E, HIN236E and HIN241E, the charge pump is
turned off, V+ is pulled down to VCC , V- is pulled up to GND,
and the supply current is reduced to less than 10µA. The
transmitter outputs are disabled and the receiver outputs
(except for HIN213E, R4 and R5) are placed in the high
impedance state.
1 at the input results in a voltage of between -5V and V- at
the output, and a logic 0 results in a voltage between +5V
and (V+ -0.6V). Each transmitter input has an internal
400kW pullup resistor so any unused input can be left
unconnected and its output remains in its low state. The
output voltage swing meets the RS-232C specifications of
±5V minimum with the worst case conditions of: all
transmitters driving 3kΩ minimum load impedance,
VCC = 4.5V, and maximum allowable operating temperature.
The transmitters have an internally limited output slew rate
which is less than 30V/µs. The outputs are short circuit
protected and can be shorted to ground indefinitely. The
powered down output impedance is a minimum of 300Ω with
± 2V applied to the outputs and VCC = 0V.
Receivers
The receiver inputs accept up to ±30V while presenting the
required 3kΩ to 7kΩ input impedance even if the power is off
(VCC = 0V). The receivers have a typical input threshold of
1.3V which is within the ±3V limits, known as the transition
region, of the RS-232 specifications. The receiver output is
0V to VCC . The output will be low whenever the input is
greater than 2.4V and high whenever the input is floating or
driven between +0.8V and -30V. The receivers feature 0.5V
hysteresis (except during shutdown) to improve noise
rejection. The receiver Enable line EN, (EN on HIN213E)
when unasserted, disables the receiver outputs, placing
them in the high impedance mode. The receiver outputs are
also placed in the high impedance state when in shutdown
mode (except HIN213E R4 and R5).
V+
VCC
400kΩ
300Ω
TXIN
TOUT
GND < TXIN < VCC
V- < VTOUT < V+
V-
Transmitters
The transmitters are TTL/CMOS compatible inverters which
translate the inputs to RS-232 outputs. The input logic
threshold is about 26% of VCC , or 1.3V for VCC = 5V. A logic
3-499
FIGURE 4. TRANSMITTER
HIN202E thru HIN241E
Application Information
VCC
RXIN
-30V < RXIN < +30V
ROUT
GND < VROUT < VCC
5kΩ
GND
FIGURE 5. RECEIVER
A simple duplex RS-232 port with CTS/RTS handshaking is
illustrated in Figure 7. Fixed output signals such as DTR
(data terminal ready) and DSRS (data signaling rate select)
is generated by driving them through a 5kΩ resistor
connected to V+.
TIN
OR
RIN
TOUT
OR
ROUT
The HIN2XXA may be used for all RS-232 data terminal and
communication links. It is particularly useful in applications
where ±12V power supplies are not available for
conventional RS-232 interface circuits. The applications
presented represent typical interface configurations.
VOL
VOL
tPHL
tPLH
AVERAGE PROPAGATION DELAY =
tPHL + tPLH
2
In applications requiring four RS-232 inputs and outputs
(Figure 8), note that each circuit requires two charge pump
capacitors (C1 and C2) but can share common reservoir
capacitors (C3 and C4). The benefit of sharing common
reservoir capacitors is the elimination of two capacitors and
the reduction of the charge pump source impedance which
effectively increases the output swing of the transmitters.
FIGURE 6. PROPAGATION DELAY DEFINITION
+5V
HIN213E Operation in Shutdown
The HIN213E features two receivers, R4 and R5, which
remain active in shutdown mode. During normal operation
the receivers propagation delay is typically 0.5µs. This
propagation delay may increase slightly during shutdown.
When entering shut down mode, receivers R4 and R5 are
not valid for 80µs after SD = VIL. When exiting shutdown
mode, all receiver outputs will be invalid until the charge
pump circuitry reaches normal operating voltage. This is
typically less than 2ms when using 0.1µF capacitors.
1
C1 +
0.1µF -
+
16
3
HIN232E
6
4
C2 +
0.1µF TD
INPUTS
OUTPUTS
TTL/CMOS
RTS
5
T1
11
14
T2
10
12
7
13
RD
CTS
9
+
R2
R1
15
8
CTR (20) DATA
TERMINAL READY
DSRS (24) DATA
SIGNALING RATE
SELECT
RS-232
INPUTS AND OUTPUTS
TD (2) TRANSMIT DATA
RTS (4) REQUEST TO SEND
RD (3) RECEIVE DATA
CTS (5) CLEAR TO SEND
SIGNAL GROUND (7)
FIGURE 7. SIMPLE DUPLEX RS-232 PORT WITH CTS/RTS
HANDSHAKING
3-500
HIN202E thru HIN241E
1
C1 +
0.1µF TD
INPUTS
OUTPUTS
TTL/CMOS
RTS
4
HIN232E
3
T1
11
-
14
T2
10
+ C2
0.1µF
5
12
TD (2) TRANSMIT DATA
7
RTS (4) REQUEST TO SEND
13
RD (3) RECEIVE DATA
RD
R2
9
CTS
R1
8
CTS (5) CLEAR TO SEND
15
VCC
16
-
2
C3
+
+
C4
6
V- V+
0.2µF
6
+5V
-
RS-232
INPUTS AND OUTPUTS
0.2µF
2
VCC
16
HIN232E
C1 +
0.1µF DTR
INPUTS
OUTPUTS
TTL/CMOS
DSRS
1
4
3
5
T1
11
14
T2
10
12
7
13
DCD
R1
R2
9
R1
15
8
+ C2
0.1µF
-
DTR (20) DATA TERMINAL READY
DSRS (24) DATA SIGNALING RATE SELECT
DCD (8) DATA CARRIER DETECT
R1 (22) RING INDICATOR
SIGNAL GROUND (7)
FIGURE 8. COMBINING TWO HIN232Es FOR 4 PAIRS OF RS-232 INPUTS AND OUTPUTS
Typical Performance Curves
12
12
SUPPLY VOLTAGE (|V|)
V- SUPPLY VOLTAGE (V)
0.1µF
10
8
6
4
V+ (VCC = 5V)
8
6
V+ (VCC = 4V)
V- (VCC = 4V)
4
TA = 25oC
2
2
0
3.0
10
3.5
4.0
4.5
5.0
5.5
VCC
FIGURE 9.
V- SUPPLY VOLTAGE vs VCC
3-501
6.0
V- (VCC = 5V)
TRANSMITTER OUTPUTS
OPEN CIRCUIT
0
0
5
10
15
20
|ILOAD| (mA)
25
30
FIGURE 10. V+, V- OUTPUT VOLTAGE vs LOAD
35
HIN202E thru HIN241E
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
128 mils x 77 mils
Type: Nitride over Silox
Nitride Thickness: 8kÅ
Silox Thickness: 7kÅ
METALLIZATION:
Type: Al
Thickness: 10kÅ ±1kÅ
TRANSISTOR COUNT:
185
SUBSTRATE POTENTIAL
PROCESS:
GND
CMOS Metal Gate
Metallization Mask Layout
HIN232E
VPIN 6
C2PIN 5
C2+
PIN 4
C1PIN 3
PIN 2 V+
PIN 1 C1+
T2OUT PIN 7
R2IN
PIN 8
T3OUT PIN 9
PIN 17 VCC
R2OUT PIN 10
PIN 11
T2IN
PIN 12
T1IN
3-502
PIN 13
R1OUT
PIN 14
R1IN
PIN 15
T1OUT
PIN 16
GND