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IS32LT3361-GRLA3-TR

IS32LT3361-GRLA3-TR

  • 厂商:

    LUMISSIL

  • 封装:

    SOP8_150MIL_EP

  • 描述:

    IC 40V, 1.3A LOW SIDE BUCK FOR L

  • 数据手册
  • 价格&库存
IS32LT3361-GRLA3-TR 数据手册
IS32LT3361 INTEGRATED NMOS SWITCH 40V/1.3A LED DRIVER WITH FAULT REPORTING July 2020 GENERAL DESCRIPTION FEATURES The IS32LT3361 is a continuous mode inductive step-down converter, designed for driving a single LED or multiple series connected LEDs efficiently from a voltage source higher than the LED voltage. The chip operates from an input supply between 6V and 40V and provides an externally adjustable output current of up to 1.3A.       The IS32LT3361 includes an integrated low-side output NMOS switch and a high-side output current sensing circuit, which uses an external resistor to set the nominal average output current.     Output current can be adjusted linearly by applying an external control signal to the ADJ pin. The ADJ pin will accept either a DC voltage or a PWM waveform. This will provide either a continuous or a gated output current. Applying a voltage less than 0.6V to the ADJ pin turns the output off and switches the chip into a low current standby state.  IS32LT3361 also features robust protections with fault reporting to ensure reliable operation. Wide input voltage range: 6V~40V Integrated 40V NMOS switch Up to 1.3A output current High efficiency (up to 98%) Simple low parts count ±5% output current accuracy over -40°C to +125°C temperature Single pin on/off and brightness control using DC voltage or PWM Up to 2000: 1 dimming ratio at 100Hz PWM Up to 1MHz switching frequency Robust fault protections  Open drain shared fault reporting  LED string open/short protection  Integrated NMOS over current protection  Diode open/short protection  Thermal shutdown protection AEC-Q100 Qualified APPLICATIONS  Automotive and avionic lighting  Fog lights  Daytime running lights  Combination tail lights  Courtesy lights  Other LED lighting The chip is assembled in a thermally enhanced SOP-8-EP package and operates over the temperature range of -40°C to +125°C. TYPICAL APPLICATION CIRCUIT VIN RS D1 8 C1 C2 4.7 F 2 RFAULTB 47kΩ VIN ISENSE 5 COUT 1 F GND IS32LT3361 3 4 CADJ 2.2nF FAULTB ADJ LX 1 L1 47 H Figure 1 Typical Application Circuit Note 1: The capacitor, C2, can’t be removed. And it MUST be placed as close as possible to the VIN and GND pins, otherwise the operation might be abnormal. Note 2: RS must be placed as close as possible to VIN and ISENSE pins to avoid noise interference. Lumissil Microsystems – www.lumissil.com Rev. A, 07/21/2020 1 IS32LT3361 PIN CONFIGURATION Package Pin Configuration SOP-8-EP PIN DESCRIPTION No. Pin Description 1 LX Drain of NMOS switch. 2 GND Ground pin. FAULTB Open drain I/O diagnostic pin. Active low output driven by the device when it detects a fault condition. As an input, this pin will accept an externally generated FAULTB signal to disable the device output to satisfy the “One Fail All Fail” function. Note this pin requires an external pull up resistor (RFAULTB) to logic high level voltage. Do not allow to float. 4 ADJ Multi-function On/Off and brightness control pin: * Leave floating for normal operation. (VADJ= VREF= 2.5V giving nominal average output current IOUT_NOM = 0.1V/RS) * Drive to below 0.6V to turn off output current. Keep low for over tSD to enter low current standby mode * Drive with DC voltage (0.81V 100Hz tSD The low voltage persist time on ADJ pin to shutdown IC VADJ20ms 24 22 22 VIN = 12V ADJ=GND for >20ms 20 20 ISD (μA) ISD (µA) 35 Temperature (°C) IINQ_ON vs. Supply Voltage Figure 2 20 18 18 16 16 14 14 12 12 10 5 10 15 20 25 30 35 10 -40 40 -25 -10 5 Supply Voltage (V) 35 50 65 Temperature (°C) ISD vs. Supply Voltage Figure 4 20 Figure 5 0.26 ISD vs. Temperature 0.36 VIN = 12V TA = 25°C 0.24 0.22 RLX (Ω) RLX (Ω) 0.31 0.20 0.21 0.18 0.16 0.26 5 10 15 20 25 30 35 40 0.16 -40 -25 -10 5 Supply Voltage (V) Figure 6 RLX vs. Supply Voltage Lumissil Microsystems – www.lumissil.com Rev. A, 07/21/2020 20 35 50 65 Temperature (°C) Figure 7 RLX vs. Temperature 6 IS32LT3361 2.6 2.6 TA = 25°C ADJ Floating 2.5 2.5 2.4 2.4 VADJ (V) VADJ (V) VIN = 12V ADJ Floating 2.3 2.3 2.2 2.2 2.1 2.1 2.0 5 10 15 20 25 30 35 2.0 -40 40 -25 -10 5 20 50 65 80 95 110 125 80 95 110 125 80 90 100 Temperature (°C) Supply Voltage (V) VADJ vs. Supply Voltage Figure 8 35 Figure 9 VADJ vs. Temperature 106 110 VIN = 12V TA = 25°C 100 VIN = 12V ADJ Floating 104 102 80 VSENSE (mV) VSENSE (mV) 90 70 60 50 100 98 40 96 30 94 20 92 10 0 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 90 -40 2.8 -25 -10 5 20 VSENSE vs. VADJ Figure 11 65 VSENSE vs. Temperature 1400 5.5 5.4 VIN = 12V VLED = 6V L1 = 47μH RS= 0.077Ω fPWM= 100Hz, 500Hz, 1kHz 1200 Output Current (mA) 5.3 VIN_UVLO (V) 50 Temperature (°C) VADJ (V) Figure 10 35 5.2 5.1 5.0 4.9 4.8 1000 800 600 400 4.7 200 4.6 4.5 -40 -25 -10 5 20 35 50 65 80 95 110 125 0 0 10 20 30 Temperature (°C) Figure 12 VIN_UVLO vs. Temperature Lumissil Microsystems – www.lumissil.com Rev. A, 07/21/2020 40 50 60 70 Duty Cycle (%) Figure 13 PWM Dimming 7 IS32LT3361 1400 1380 L1 = 47μH RS= 0.077Ω 95 1360 1340 2LED 3LED 1320 1300 4LED 1280 5LED 6LED 7LED 10LED 8LED 9LED 7LED 3LED 90 2LED 85 80 1LED 10LED 9LED 8LED 1260 5LED 6LED 4LED 1LED Efficiency (%) Output Current (mA) 100 L1 = 47μH RS= 0.077Ω 1240 75 1220 1200 5 10 15 20 25 30 35 70 40 5 10 15 Supply Voltage (V) Figure 14 750 Output Current vs. Supply Voltage 30 35 40 Efficiency vs. Supply Voltage Figure 15 100 L1 = 47μH RS= 0.154Ω L1 = 47μH RS= 0.154Ω 5LED 6LED 7LED 8LED 9LED 10LED 4LED 700 3LED Efficiency (%) Output Current (mA) 25 Supply Voltage (V) 95 1LED 2LED 650 3LED 4LED 5LED 600 550 20 5 10 15 7LED 8LED 6LED 9LED 20 25 2LED 90 85 1LED 80 10LED 30 35 75 40 70 5 10 15 Supply Voltage (V) Figure 16 Output Current vs. Supply Voltage Figure 17 VIN 10V/Div VLX 10V/Div VLX 10V/Div Time (2ms/Div) Power Up Lumissil Microsystems – www.lumissil.com Rev. A, 07/21/2020 30 35 40 Efficiency vs. Supply Voltage VADJ 5V/Div VIN = 12V VLED = 6V L1 = 47μH RS = 0.2Ω CADJ = 2.2nF Figure 18 25 Supply Voltage (V) VIN 10V/Div IL1 200mA/Div 20 IL1 200mA/Div VIN = 12V VLED = 6V L1 = 47μH RS = 0.2Ω CADJ = 2.2nF Time (200μs/Div) Figure 19 Power Down 8 IS32LT3361 VIN 10V/Div VIN 10V/Div VLX 10V/Div VLX 10V/Div VADJ 2V/Div VIN = 12V VLED = 6V L1 = 47μH RS = 0.2Ω VADJ 2V/Div IL1 500mA/Div Time (10μs/Div) Figure 20 IL1 500mA/Div Time (10μs/Div) PWM On Figure 21 PWM Off VLX 20V/Div VIN 10V/Div VLX 10V/Div VADJ 2V/Div VIN = 12V VLED = 6V L1 = 47μH RS = 0.2Ω VFAULTB 10V/Div VLED10V/Div VIN = 12V VLED = 6V L1 = 47μH RS = 0.2Ω IL1 1A/Div IL1 500mA/Div Time (20μs/Div) Figure 22 Time (20ms/Div) Enabling from Shutdown Mode Figure 23 VIN = 12V L1 = 47μH VIN = 12V COUT = 1μF L1 = 47μH LED Open and Recovery VIN = 12V L1 = 47μH VLX 20V/Div VLX 10V/Div VFAULTB 10V/Div VFAULTB 10V/Div IL1 500mA/Div ILX 5A/Div Time (20ms/Div) Figure 24 Diode Open Lumissil Microsystems – www.lumissil.com Rev. A, 07/21/2020 Time (20ms/Div) Figure 25 Diode Short and Recovery 9 IS32LT3361 FUNCTIONAL BLOCK DIAGRAM VIN ISENSE FAULTB Fault Thermal Shutdown Fault Shutdown Input Thermal VDD Thermal ADJ Regulator 580kΩ ADJ 2.5V 4.5V POR Voltage Regulator Fault Report BandGap Didoe Short Detect OP Didoe Open Detect LX Clamp LPF LED Open Detect CMP Logic Driver Shutdown Fault Shutdown Command Detector GND Lumissil Microsystems – www.lumissil.com Rev. A, 07/21/2020 10 IS32LT3361 APPLICATION INFORMATION The IS32LT3361 is a current hysteresis control LED buck driver with integrated NMOS switch. When power is applied, the integrated NMOS switch is turned on and the current starts to flow through the sense resistor RS, the LED string, the inductor L1 and internal NMOS switch to ground. The current ramps up linearly and its ramp up rate is determined by the supply voltage, LED string voltage and inductor L1 value. The device monitors the voltage across the sense resistor RS, which is produced by RS x IOUT. Once the voltage reaches the internal upper threshold (about +15% over VSENSE), the integrated NMOS switch is turned off and the current in the inductor L1 continues to flow through the Schottky diode D1, sense resistor RS, LED string and back into the inductor. The current linearly ramps down and its ramp down rate is determined by the Schottky diode D1 forward voltage, the LED string voltage and inductor L1 value. When the voltage reaches the internal lower threshold (about -15% below VSENSE), the integrated NMOS switch is turned on again. Therefore the on/off of the NMOS switch maintains an average current in the LED string set by sense resistor RS. for the sense resistor to maintain a switch current below the specified maximum value of 1.3A. Table 1 gives values of nominal average output current for several values of current setting resistor (RS) in the typical application circuit Figure 1: Table 1 Output Current Setting Nominal Average Output RS (Ω) Current (mA) 0.077 1300 0.15 667 0.3 333 The above values assume that the ADJ pin is floating and at a nominal voltage of VREF = 2.5V. RS needs to be a 1% accuracy resistor with enough power tolerance and good temperature characteristic to ensure a stable output current. On PCB layout, this resistor MUST be placed as close to VIN and ISENSE pins as possible to avoid the EMI noise interference. ENABLE AND PWM DIMMING A high logic signal (>2.5V) on the ADJ pin will enable the IC. The buck converter ramps up the LED current to a target level which is set by current sense resistor, RS. Figure 26 Operation Waveforms UNDER VOLTAGE LOCKOUT (UVLO) The device features an under voltage lockout (UVLO) function on VIN pin. This is a fixed value which cannot be adjusted. The device is enabled when the VIN voltage rises to exceed VIN_UVLO (Typ. 5.25V), and disabled when the VIN voltage falls below (VIN_VLO – VIN_UVLO_HY) (Typ. 5.05V). OUTPUT CURRENT SETTING The nominal average output current in the LED(s) is determined by the value of the external current sense resistor (RS) connected between VIN and ISENSE pins and is given by Equation (1): I OUT _ NOM 0.1V  RS (1) Note that RS=0.077Ω is the minimum allowed value Lumissil Microsystems – www.lumissil.com Rev. A, 07/21/2020 When the ADJ pin goes from high to low ( 150ns. LX Switch ‘OFF’ time: t OFF  VLED L  I  VD  I AVG ( RL  RS ) (6) very important to consider the reverse leakage of the diode when operating at high temperature. Excess leakage will increase the power dissipation in the device. The higher forward voltage and overshoot due to reverse recovery time in silicon diodes will increase the peak voltage on the LX output. If a silicon diode is used, care should be taken to ensure that the total voltage appearing on the LX pin including supply ripple, does not exceed the specified maximum value. REDUCING LED CURRENT RIPPLE VIN is the supply voltage (V) In a buck architecture, the output current is identical with the inductor current. For the IS32LT3361, the output current ripple is fixed at about ±15%. Connecting an output capacitor in parallel with LED string will further reduce the current ripple in the LED string. A value of 1μF will reduce nominal ripple current by a factor of three (approx.). Proportionally lower ripple can be achieved with higher capacitor values. Note that the capacitor will not affect operating frequency or efficiency, but it will increase start-up delay, by reducing the rate of rise of LED voltage. VLED is the total LED forward voltage (V) FAULT PROTECTION AND REPORTING RLX is the NMOS switch resistance (Ω) For robust system reliability, the IS32LT3361 integrates the detection circuitry to protect various fault conditions and report the fault conditions by the FAULTB pin which can be monitored by an external host. The fault protections include LED string open, Schottky diode open/short and thermal shutdown. Refer to Table 2. The FAULTB pin is an open drain structure with both input and output functionality. The FAULTB pin is not allowed to float. An external resistor, RFAULTB, must be added to pull up the FAULTB pin above 2V for normal operation. The recommended resistor value is 47kΩ. The FAULTB pin will go low after a delay time, tFAULTB, if the IS32LT3361 detects a fault condition. If the fault condition is removed, the FAULTB pin will recover to a high impedance state after tFAULTB. The delay time is helpful to block some unwanted false fault reporting. Note: tOFF_MIN > 150ns. Where: L is the inductor inductance (H) RL is the inductor resistance (Ω) IAVG is the required LED current (A) ∆I is the inductor peak-peak ripple current (A) [Internally set to 0.3 × IAVG] VD is the diode forward voltage at the required load current (V) Example: For VIN=12V, L=47μH, RL=0.26Ω, VLED=3.4V, IAVG =333mA, VD =0.36V, RS = 0.3Ω, RLX=0.25Ω: 47  0.3  0.333  0.564 s 12  3.4  0.333  (0.3  0.26  0.25) 47  0.3  0.333   1.19 s 3.4  0.36  0.333  (0.26  0.3) t ON  t OFF This gives an operating frequency of 570kHz and a duty cycle of 32%. Optimum performance will be achieved by setting the duty cycle close to 50% at the nominal supply voltage. This helps to equalize the undershoot and overshoot and improves temperature stability of the output current. DIODE SELECTION For maximum efficiency and performance, the rectifier (D1) should be a fast and low capacitance Schottky diode with low reverse leakage at the maximum operating voltage and temperature. If alternative diodes are used, it is important to select diodes with a peak current rating above the peak inductor current and a continuous current rating higher than the maximum output load current. It is Lumissil Microsystems – www.lumissil.com Rev. A, 07/21/2020 As an input pin, externally pulling the FAULTB pin low will disable the output at once. For lighting systems with multiple IS32LT3361 drivers which require the complete lighting system be shut down when a fault is detected, the FAULTB pin can be used in a parallel connection. A fault output by one device will pull low the FAULTB pins of the other parallel connected devices and simultaneously turn them off. This satisfies the “One Fail All Fail” operating requirement. If the FAULTB pin is shared with multiple devices and more than one external RFAULTB is used, the resulting equivalent parallel resistor value should not result in >5mA to each FAULTB input. 13 IS32LT3361 LED STRING OPEN PROTECTION The LED string open detection is enabled after the VIN voltage rises above the internally fixed threshold, VFT_UVLO, which is to prevent insufficient VIN voltage falsely triggering an open detection. If the connection to the LED(s) is open, the loop current flow is cut off, the voltage cross the sense resistor RS will never reach the internal upper threshold, preventing switching operation (the NMOS switch stays in the ON state). This prevents damage to the IS32LT3361, unlike in many boost converters, where the back EMF may damage the internal switch by forcing the drain above its breakdown voltage. If the switching stops for more than 20μs (Typ.) and if tFAULTB time is exceeded, the device recognizes this as an LED string open fault pulls the FAULTB pin low to report a fault. Once the open fault condition is removed, the device will recover to normal operation and the FAULTB pin will go back to high impedance state after tFAULTB. the integrated NMOS switch turns off, the voltage on LX pin will increase due to the back EMF of the inductor. When the LX pin voltage exceeds the open diode detection threshold, VOD_TH, the IS32LT3361 latches at the off state (stop switching) and pulls FAULTB pin low to report after exceeding tFAULTB. The back EMF is discharged by the breakdown of the integrated NMOS switch, which is overstressed and may cause permanent damage to the device. Therefore the protection is not auto recoverable but needs a power cycle. Note that even though the diode open protection is able to latch the switching off, the back EMF still might cause permanent damage to the NMOS switch. To avoid an open diode condition, it is recommended that the soldering reliability of the Schottky diode must be ensured during the mass-production. IS32LT3361 LED SHORT PROTECTION D1 COUT 1 F L1 47 H If the LED string is shorted by a low impedance wire, the system will continue operation with the set current but at a very low duty cycle, however it will not cause any damage to system. An LED short-circuit will not be reported at the FAULTB pin. LX Overshoot DIODE SHORT PROTECTION Should the Schottky diode be shorted by a low impedance wire, the power supply is directly connected to the drain of the integrated NMOS switch and will be shorted to ground when the NMOS switch turns on. That triggers the NMOS switch current limit protection and the integrated NMOS switch will immediately turn off and the FAULTB pin will go low after tFAULTB. The device enters a hiccup mode of tSKIP cycle time until the fault condition is removed and FAULTB pin goes back to high impedance state after tFAULTB. DIODE OPEN PROTECTION In the event the Schottky diode fails open and once Figure 29 Schottky Diode Open THERMAL SHUTDOWN PROTECTION To protect the device from damage due to high power dissipation, the junction temperature is monitored. If the junction temperature exceeds the thermal shutdown temperature of 165°C (Typ.) then the device will shut down immediately, and the output current is shut off and FAULTB pin is pulled low after tFAULTB. After a thermal shutdown event, the IS32LT3361 will not try to restart until its temperature has reduced to less than 150°C (Typ.). Once it restarts the FAULTB pin will recover to a high impedance state after tFAULTB. Table 2 Fault Conditions Fault Type Detection Condition Driver Action LED open VIN>VFT_UVLO and NMOS switch on-time exceeds 20µs Normal operation Diode short NMOS switch current exceeds ILX_LIMIT NMOS switch turns off immediately and retrys after every tSKIP cycle time Diode open LX pin voltage exceeds VOD_TH for 1 switching cycles time Latch at off state immediately Thermal shutdown The junction temperature exceeds 165°C NMOS switch turns off immediately Lumissil Microsystems – www.lumissil.com Rev. A, 07/21/2020 Fault Reporting Fault Recovering NMOS switch on-time is shorter than 20µs FAULTB pin is pulled low after the delay time tFAULTB NMOS switch current drops below ILX_LIMIT Power cycle The junction temperature falls below 150°C. 14 IS32LT3361 THERMAL CONSIDERATIONS The package thermal resistance, θJA, determines the amount of heat that can pass from the silicon die to the surrounding ambient environment. The θJA is a measure of the temperature rise created by power dissipation and is usually measured in degree Celsius per watt (°C/W). When operating the chip at high ambient temperatures, or when driving maximum load current, care must be taken to avoid exceeding the package power dissipation limits. The maximum power dissipation can be calculated using the following Equation: PD ( MAX )  PD ( MAX )  So, TJ ( MAX )  TA 125C  25C  2.3W 43.5C / W Figure 30, shows the power derating of the IS32LT3361 on a JEDEC boards (in accordance with JESD 51-5 and JESD 51-7) standing in still air. 2.5 SOP-8-EP Power Dissipation (W) Board Via Layout For Thermal Dissipation LAYOUT CONSIDERATIONS (7)  JA Figure 31 2 As for all switching power supplies, especially those providing high current and using high switching frequencies, layout is an important design step. If layout is not carefully handled, the operation could show instability as well as EMI problems. The high dV/dt surface and dI/dt loops are a big noise emission source. To optimize the EMI performance, maintain a compact PCB layout for all high switching frequency points with a high voltage. Meantime, keep all traces carrying high current as short as possible to minimize the loops. VIN Pin The capacitor C1 and C2 should be placed as close as possible to VIN and GND pins for good filtering. Especially the C2 (4.7µF), it must be right next to the IS32LT3361 to prevent ground bounce, otherwise the device operation may be abnormal. 1.5 1 RS Resistor 0.5 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (°C) Figure 30 Dissipation Curve The thermal resistance is achieved by mounting the IS32LT3361 on a standard FR4 double-sided printed circuit board (PCB) with a copper area of a few square inches on each side of the board under the IS32LT3361. Multiple thermal vias, as shown in Figure 31, help to conduct the heat from the exposed pad of the IS32LT3361 to the copper on each side of the board. The thermal resistance can be reduced by using a metal substrate or by adding a heatsink. To avoid ground jitter, the current monitoring resistor, RS, should be placed close to the device with short trace length to the device pins. To prevent noise coupling, the RS traces should either be far away or be isolated from high-current paths and high-speed switching nodes. These practices are essential for improved accuracy and stability. LX Pin Keep the traces of the switching points short. The inductor L1, LX and free wheeling Schottky diode D1 should be placed as close to each other as possible and the traces of connection between them kept as short and wide as possible. ADJ Pin The ADJ pin is a high impedance input, so when left floating, PCB traces to this pin should be as short as possible to reduce noise pickup. A small nanofarad capacitor is recommended for soft start and noise decoupling. Lumissil Microsystems – www.lumissil.com Rev. A, 07/21/2020 15 IS32LT3361 Thermal Pad The thermal pad under the IS32LT3361 package must be soldered to a sufficient size of copper ground plane with sufficient vias to conduct the heat to opposite side PCB for adequate cooling. Lumissil Microsystems – www.lumissil.com Rev. A, 07/21/2020 16 IS32LT3361 CLASSIFICATION REFLOW PROFILES Profile Feature Pb-Free Assembly Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) 150°C 200°C 60-120 seconds Average ramp-up rate (Tsmax to Tp) 3°C/second max. Liquidous temperature (TL) Time at liquidous (tL) 217°C 60-150 seconds Peak package body temperature (Tp)* Max 260°C Time (tp)** within 5°C of the specified classification temperature (Tc) Max 30 seconds Average ramp-down rate (Tp to Tsmax) 6°C/second max. Time 25°C to peak temperature Figure 32 8 minutes max. Classification Profile Lumissil Microsystems – www.lumissil.com Rev. A, 07/21/2020 17 IS32LT3361 PACKAGE INFORMATION SOP-8-EP Lumissil Microsystems – www.lumissil.com Rev. A, 07/21/2020 18 IS32LT3361 RECOMMENDED LAND PATTERN SOP-8-EP Note: 1. Land pattern complies to IPC-7351. 2. All dimensions in MM. 3. This document (including dimensions, notes & specs) is a recommendation based on typical circuit board manufacturing parameters. Since land pattern design depends on many factors unknown (eg. User’s board manufacturing specs), user must determine suitability for use. Lumissil Microsystems – www.lumissil.com Rev. A, 07/21/2020 19 IS32LT3361 REVISION HISTORY Revision Detail Information Date 0A Initial release 2020.03.06 A Update to final version 2020.07.21 Lumissil Microsystems – www.lumissil.com Rev. A, 07/21/2020 20
IS32LT3361-GRLA3-TR 价格&库存

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