TS19501CB10H RBG

TS19501CB10H Taiwan Semiconductor High Integrated Dimmable LED Controller with Spread Spectrum Frequency Modulation for Automotive Headlight DESCRIPTION FEATURES TS19501CB10H is a single channel LED driver of lowside-current sense. This device can operate in DCM, ● AEC-Q100 qualified with the following results: Device temperature grade 1: -40°C to 125°C Device HBM ESD classification level H2 Device CDM ESD classification level C6 ● Drives LEDs in Boost, Buck-Boost and SEPIC Topology ● Operation in DCM, BCM, CCM mode ● Input Voltage 4.5V ~ 42V ● Adjustable Switching Frequency 70k ~ 700kHz ● Low-Side Current Sense ● Internal Voltage Reference 150mV ±3.3% ● Both PWM Dimming and Analog Dimming ● Over Voltage Protection (OVP) ● Over Current Protection (OCP) ● Over Temperature Protection (OTP) ● Under Voltage Lockout (UVLO) ● Jitter function for effective spread spectrum to reduce EMI ● Fault Status flag and Internal Soft Start ● to RoHS Compliant ● Halogen-Free according to IEC 61249-2-21 BCM and CCM mode with full protection and diagnostics. This device is dedicated and suited for automotive headlight. This controller supports typical topologies such as boost, buck-boost and SEPIC. Output current regulation is based on average current mode control supervised by a control loop. The fault flag is connected to pull-up resistor from VDC for highlighting the information of fault and fault status flag is latched by the timer when output is low. APPLICATION ● Automotive LED Lighting: High and low Beam, Daytime Running Light, Turn indicator, Position Light, Fog Light ● General Lighting Applications ● High Brightness LED Applications Pin Definition: 1. EN 10. OUT 2. DIM 9. VIN 3. FLT 8. GND 4. CS 7. RT 5. COM 6. OVP MSOP-10EP Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 TYPICAL APPLICATION CIRCUIT LED LED CO BOOST VIN CO D1 RDMY BOOST BUCK-BOOST VIN BUCK-BOOST L1 9 RENH FLT CIN CBAT CEN RENL 3 1 RT 7 CCOM 5 D1 RDMY L1 VIN OVP FLT DIM EN OUT RT CS COM GND ROVPH 6 2 10 RENH PWM/Analog D2 RG Q1 4 8 9 RCC CCC FLT CIN ROVPL CBAT RCS CEN RENL 1 RT 7 CCOM Buck-Boost Regulator 3 5 VIN OVP FLT DIM EN OUT RT CS COM GND ROVPH 6 2 10 PWM/Analog D2 RG Q1 4 8 RCC CCC ROVPL RCS Boost Regulator 1 Version: A1911 TS19501CB10H Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) (Note 1) PARAMETER SYMBOL LIMIT UNIT Battery power input Pin VIN -0.3 to 42 V FLT output to GND VFLT -0.3 to 42 V OUT voltage to GND VOUT -0.3 to 20 V EN voltage to GND VEN -0.3 to 5.5 V DIM voltage to GND VDIM -0.3 to 5.5 V CS voltage to GND VCS -0.3 to 5.5 V COM voltage to GND VCOM -0.3 to 5.5 V OVP voltage to GND VOVP -0.3 to 5.5 V RT voltage to GND VRT -0.3 to 5.5 V Junction Temperature Range TJ -40 to +150 °C Storage Temperature Range TSTG -65 to +150 °C Lead Temperature (Soldering 10 sec) TLEAD 260 °C PD 1.1 W ESD Rating (Human Body Model) HBM ±2 kV ESD Rating (Charged Device Model) CDM ±1 kV SYMBOL TYP UNIT Thermal Resistance Junction to Ambient RθJA 113 °C/W Thermal Resistance Junction to Case RθJC 38 °C/W Power Dissipation @ TA=25°C THERMAL PERFORMANCE (Note 2) PARAMETER RECOMMENDED OPERATING CONDITION (TA = 25°C unless otherwise specified) (Note 3) PARAMETER SYMBOL LIMIT UNIT Battery power input Pin VIN 8 to 38 V FLT output to GND VFLT 0 to 38 V OUT voltage to GND VOUT 0 to 18 V EN voltage to GND VEN 0 to 5 V DIM voltage to GND VDIM 0 to 5 V CS voltage to GND VCS 0 to 0.8 V COM voltage to GND VCOM 1.2 to 3.6 V OVP voltage to GND VOVP 1.6 to 3.1 V RT voltage to GND VRT 1.2 V Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -40 to +150 °C Operating Ambient Temperature Range TOPA -40 to +125 °C 2 Version: A1911 TS19501CB10H Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (VIN= 14V, TA = -40°C ~125°C unless otherwise specified) PARAMETER SYMBOL CONDITION MIN TYP MAX UNIT VIN_ON 3.8 4.3 4.8 V VHYS -- 0.2 -- V EN Turn-on Threshold VEN_ON 1.05 -- 1.35 V EN Hysteresis Current IHYS_EN 10 20 30 μA Quiescent Current IQ 80 160 240 μA Operating Supply Current IIN 1 -- 4 mA 140 150 160 mV Supply Voltage VIN Turn-on Threshold VIN Hysteresis RRT=50kohm GM Amplifier Internal Reference Voltage Transconductance VREF Gm ICOM_SINK/0.4 80 100 120 μA/V Sink Current ICOM_SINK VCS= 400mV -- 40 -- μA Source Current ICOM_SOUR VCS= 0V -- 15 -- μA 185 200 215 kHz -- ±8.5 -- % Oscillator Oscillator Frequency FOSC RRT=50kohm Jitter Frequency FJT Design Guarantee Soft Start Time TSS -- 1024 -- Fault Blank Time TFB -- 2048 -- Hiccup Time THUP -- 32768 -- -- 530 700 mV -- 50 90 mV -- 40 -- ns Clock Cycles Driver Output Rising Time TR VIN=12V, CO =1nF IO= 10mA VIN=12V, CO =1nF IO= -10mA CO =1nF Output Falling Time TF CO =1nF -- 30 -- ns VO_CLAMP CO =1nF -- 12.5 12.8 V Dropout Voltage VOH VOL Output Clamp Voltage Protection Output Voltage Protection Short Circuit Protection VOVP 3.0 3.25 3.5 V VSCP 1.4 -- 1.6 V Current Limit Voltage VCSL 720 820 920 mV Leading Edge Blanking Time LEBt CO =1nF -- 350 500 ns MOS Current Protection VMCP CO =1nF 1.1 1.23 1.4 V FLT Dropout Voltage VFLT IFLT=10mA -- 200 -- mV CO =1nF -- 85 -- % Maximum Duty VDUTY 3 Version: A1911 TS19501CB10H Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL CONDITION MIN TYP MAX UNIT VOH_DIM 2.5 -- -- V VMAX_DIMA 1.5 1.6 1.7 V IDIM 7.2 10 12.8 μA Thermal Shutdown TSD -- 165 -- °C Temperature Hysteresis THYS -- 30 -- °C Dimming PWM Dimming High Threshold Voltage Analog Dimming Threshold Voltage of 100% Current Regulation Source Current of DIM Thermal Section (Note 4, 5) Note: 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. Test boards conditions: (a) 5.6mm × 4mm, 2 layers, thickness: 1mm. (b) 1-oz copper traces located on the top of the PCB. (c) 1-oz copper ground plane, bottom layer. (d) 5-thermal vias (0.3mm) located under the device package. 3. The device is not guaranteed to function outside its operating conditions. 4. Guaranteed by design. 5. Auto Recovery type. ORDERING INFORMATION ORDERING CODE PACKAGE PACKING TS19501CB10H RBG MSOP-10EP 5,000pcs / 13”Reel 4 Version: A1911 TS19501CB10H Taiwan Semiconductor FUNCTION BLOCK VIN OVP 5V 3.2V 3.2V 2.0V 1.5V 0.8V 0.4V 0.2V BIAS & BG EN 1.5V TOFF Level Shift S/H OVP SCP FLT OTP Logic SS Jitter S1 S0 OneShot OSC Current Compensation RT SET RST COM GM Amplifier 0.2V 10µA DIM DIM VREF PRO Q TON Gate Driver OUT R /Q 1.2V VRAMP 5V S MCP LEB OCP Soft Start TON TOFF VIAVG S1 ∫ CS 0.8V 0.4V 0.2V S0 GND PIN DESCRIPTION PIN NO. NAME FUNCTION 1 EN Enable and shut down pin 2 PWM/Analog dimming voltage input 3 DIM FLT 4 CS 5 COM Compensation output pin of error amplifier. 6 OVP Over voltage sensing pin Open drain output pin for fault status flag. Input current sense pin. 7 RT 8 GND Ground return for all internal circuitry. 9 VIN Battery power input pin for all internal circuitry. OUT 10 Thermal pad Connect external resistor to GND to set frequency. Power MOS output pin. No internal connection 5 Version: A1911 TS19501CB10H Taiwan Semiconductor TYPICAL PERFORMANCE CURVES 600 600 500 500 400 400 ILED (mA) ILED (mA) VIN=12V, ILED=600mA, VO=24V (8 LEDs) unless otherwise specified. 300 300 200 200 100 100 0 0 0 20 40 60 80 100 0 0.4 0.6 0.8 1 1.2 1.4 1.6 Figure 2. ILED vs. Analog Dimming Figure 1. ILED vs. PWM Dimming Duty 600 10.00 595 9.50 IDIM (uA) ILED (mA) 0.2 Analog Dimming (V) PWM Dimming Duty(%) 9.00 590 8.50 585 580 8.00 -40 0 40 80 120 160 -40 0 40 Temperature (°C) 80 120 160 Temperature (°C) Figure 3. ILED vs. Temperature Figure 4. IDIM vs. Temperature 900 3.4 800 700 Frequency (KHz) VOVP (V) 3.3 3.2 3.1 600 500 400 300 200 100 0 3 -40 0 40 80 120 0 160 50 100 150 200 RT(KΩ) Temperature (°C) Figure 6. Frequency vs. RT Figure 5. OVP vs. Temperature 6 Version: A1911 TS19501CB10H Taiwan Semiconductor TYPICAL APPLICATION CIRCUITS RDMY CO BOOST VIN D1 LED BUCK-BOOST L1 RLC 9 RENH VDC CIN CEN RENL CBAT RFLT 3 1 RT 7 CCOM 5 VIN OVP FLT DIM EN OUT RT CS COM GND ROVPH 6 VDIM 2 RG 10 ROVPL Q1 4 RCC CCC 8 RCS CDIM Buck-Boost Regulator RDMY CO BOOST VIN D1 LED BUCK-BOOST L1 RLC 9 RENH VDC CIN CBAT RFLT 3 CEN RENL 1 RT 7 CCOM 5 VIN OVP FLT DIM EN OUT RT CS COM GND ROVPH 6 VDIM 2 10 RG Q1 4 RCC CCC 8 ROVPL RCS CDIM Boost Regulator LED RDMY CO D1 L2 Cs VIN L1 9 CBAT RENH FLT CIN CEN RENL 3 1 RT CCOM 7 5 ROVPH VIN OVP FLT DIM EN OUT RT CS COM GND 6 VDIM 2 10 4 8 RG ROVPL Q1 RCS SEPIC 7 Version: A1911 TS19501CB10H Taiwan Semiconductor APPLICATION INFORMATION The TS19501CB10H uses an external current sense resistor (RCS) between the MOSFET source and the GND to convert the input power. The MOSFET ON current signal and VREF are input to the GM amplifier. The special GM amplifier follows the design formula to combine the TON and TOFF information which are forced to be equal potential through system negative feedback. The average LED current can be expressed as below. ILED_avg  VREF RCS Where:  ILED_avg is the average LED current  VREF is the internal reference voltage (150mV)  RCS is the sensing resistor connected between the MOSFET source and the GND Pin Definitions EN Pin The EN pin can sense VIN information by voltage divider resister. The hysteresis current (IEN) is 20μA when the divider voltage is over VEN_ON. DIM Pin A PWM and analog dimming function is applied in TS19501CB10H. The analog dimming range is an DC voltage from 0V to 1.6V. PWM dimming function is the same pin of analog dimming. The current regulation is decided by duty cycle of external PWM signal. Built-in 10μA source current is for NTC resistance application. FLT Pin Open drain output for fault status flag. CS Pin MOSFET current signal sensing and current limit setting function. ICS( LIMIT)  0.8 RCS Where:  ICS(LIMIT) is the input current limit  RCS is the sensing resistor connected between the MOSFET source and GND COM Pin This is the output of the Gm amplifier. Connect with a suitable RC network to ground. 8 Version: A1911 TS19501CB10H Taiwan Semiconductor APPLICATION INFORMATION Pin Definitions (Continue) OVP Pin The Output voltage is reflected by inductor voltage. The OVP pin can sense output information which it departs from start-up voltage (VSCP) and protect voltage (VOVP). When the OVP sense voltage under VSCP a period of time (8 clock cycles), The short circuit protection (SCP) will work. When the OVP sense voltage over VOVP a period of time (8 clock cycles), the over voltage protection (OVP) will work. it will attempt to recover after every 32768 clock cycles. D1 L1 VBAT For Boost OVP CO RDMY ROVPL OUT CS RCS GND LED ROVPH Boost GND VBAT Buck-Boost VO_OVP  3.2  ROVPH  ROVPL ROVPL VO_SCP  1.5  ROVPH  ROVPL ROVPL For Buck-Boost and SEPIC ROVPH  ROVPL   VO_OVP   3.2    VBAT ROVPL   ROVPH  ROVPL   VO_SCP   1.5    VBAT ROVPL   Where:  VOVP is the output-over-voltage protection point (3.2V)  VSCP is the output-short-circuit protection point (1.5V) RT Pin This pin is to program the operation frequency by connecting a resistor to ground. Reference formula as below: FS  1 1  10 -10  RT GND Pin GND is the reference node of internal circuit. VIN Pin Power supply input for the controller during normal operation. The controller will start up when VIN reaches 4.2V (typical) and will shut-down when VIN voltage is below 4.0V (typical) when VEN over 1.2V. A decoupling capacitor should be connected between the VIN and GND pin as close as possible. OUT Pin Gate drive for external MOSFET switch and built-in gate clamp function. 9 Version: A1911 TS19501CB10H Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) MSOP-10EP SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM TS19501 YML Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) 10 Version: A1911 TS19501CB10H Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 11 Version: A1911