FM24C16B
16-Kbit (2K × 8) Serial (I2C) F-RAM
16-Kbit (2K × 8) Serial (I2C) F-RAM
Features
■
■
Functional Description
16-Kbit ferroelectric random access memory (F-RAM) logically
organized as 2K × 8
14
❐ High-endurance 100 trillion (10 ) read/writes
❐ 151-year data retention (See the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
The FM24C16B is a 16-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by EEPROM and other nonvolatile
memories.
Fast 2-wire Serial interface (I2C)
❐ Up to 1-MHz frequency
2
❐ Direct hardware replacement for serial (I C) EEPROM
❐ Supports legacy timings for 100 kHz and 400 kHz
Unlike EEPROM, the FM24C16B performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. Also, F-RAM exhibits much lower power during writes
than EEPROM since write operations do not require an internally
elevated power supply voltage for write circuits. The FM24C16B
is capable of supporting 1014 read/write cycles, or 100 million
times more write cycles than EEPROM.
■
Low power consumption
❐ 100 A active current at 100 kHz
❐ 4 A (typ) standby current
■
Voltage operation: VDD = 4.5 V to 5.5 V
■
Industrial temperature: –40 C to +85 C
■
8-pin small outline integrated circuit (SOIC) package
■
Restriction of hazardous substances (RoHS) compliant
These capabilities make the FM24C16B ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
The FM24C16B provides substantial benefits to users of serial
(I2C) EEPROM as a hardware drop-in replacement. The device
specifications are guaranteed over an industrial temperature
range of –40 C to +85 C.
For a complete list of related documentation, click here.
Logic Block Diagram
Address
Latch
Counter
11
2Kx8
F-RAM Array
8
SDA
SCL
WP
Serial to Parallel
Converter
Data Latch
8
Control Logic
Cypress Semiconductor Corporation
Document Number: 001-84450 Rev. *L
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised February 12, 2018
FM24C16B
Contents
Pinout ................................................................................ 3
Pin Definitions .................................................................. 3
Functional Overview ........................................................ 4
Memory Architecture ........................................................ 4
I2C Interface ...................................................................... 4
STOP Condition (P) ..................................................... 4
START Condition (S) ................................................... 4
Data/Address Transfer ................................................ 5
Acknowledge/No-acknowledge ................................... 5
Slave Device Address ................................................. 6
Addressing Overview (Word Address) ........................ 6
Data Transfer .............................................................. 6
Memory Operation ............................................................ 6
Write Operation ........................................................... 6
Read Operation ........................................................... 7
Endurance ......................................................................... 8
Maximum Ratings ............................................................. 9
Operating Range............................................................... 9
DC Electrical Characteristics .......................................... 9
Data Retention and Endurance ..................................... 10
Document Number: 001-84450 Rev. *L
Capacitance .................................................................... 10
Thermal Resistance ........................................................ 10
AC Test Loads and Waveforms ..................................... 10
AC Test Conditions ........................................................ 10
AC Switching Characteristics ....................................... 11
Power Cycle Timing ....................................................... 12
Ordering Information ...................................................... 13
Ordering Code Definitions ......................................... 13
Package Diagram ............................................................ 14
Acronyms ........................................................................ 15
Document Conventions ................................................. 15
Units of Measure ....................................................... 15
Document History Page ................................................. 16
Sales, Solutions, and Legal Information ...................... 17
Worldwide Sales and Design Support ....................... 17
Products .................................................................... 17
PSoC®Solutions ....................................................... 17
Cypress Developer Community ................................. 17
Technical Support ..................................................... 17
Page 2 of 17
FM24C16B
Pinout
Figure 1. 8-pin SOIC pinout
NC
1
NC
2
NC
3
VSS
4
Top View
not to scale
8
VDD
7
WP
6
SCL
5
SDA
Pin Definitions
Pin Name
SDA
I/O Type
Description
Input/Output Serial Data/Address. This is a bi-directional pin for the I2C interface. It is open-drain and is intended
to be wire-AND’d with other devices on the I2C bus. The input buffer incorporates a Schmitt trigger for
noise immunity and the output driver includes slope control for falling edges. An external pull-up resistor
is required.
SCL
Input
Serial Clock. The serial clock pin for the I2C interface. Data is clocked out of the device on the falling
edge, and into the device on the rising edge.
WP
Input
Write Protect. When tied to VDD, addresses in the entire memory map will be write-protected. When
WP is connected to ground, all addresses are write enabled. This pin is pulled down internally.
VSS
Power supply Ground for the device. Must be connected to the ground of the system.
VDD
Power supply Power supply input to the device.
Document Number: 001-84450 Rev. *L
Page 3 of 17
FM24C16B
Functional Overview
operation is complete. This is explained in more detail in the
interface section.
The FM24C16B is a serial F-RAM memory. The memory array
is logically organized as 2,048 × 8 bits and is accessed using an
industry-standard I2C interface. The functional operation of the
F-RAM is similar to serial (I2C) EEPROM. The major difference
between the FM24C16B and a serial (I2C) EEPROM with the
same pinout is the F-RAM's superior write performance, high
endurance, and low power consumption.
Note that the FM24C16B contains no power management
circuits other than a simple internal power-on reset. It is the
user’s responsibility to ensure that VDD is within data sheet
tolerances to prevent incorrect operation.
Memory Architecture
When accessing the FM24C16B, the user addresses 2K
locations of eight data bits each. These eight data bits are shifted
in or out serially. The addresses are accessed using the I2C
protocol, which includes a slave address (to distinguish other
non-memory devices), a row address, and a segment address.
The row address consists of 8-bits that specify one of the 256
rows. The 3-bit segment address specifies one of the 8 segments
within each row. The complete address of 11-bits specifies each
byte address uniquely.
The access time for the memory operation is essentially zero,
beyond the time needed for the serial protocol. That is, the
memory is read or written at the speed of the I2C bus. Unlike a
serial (I2C) EEPROM, it is not necessary to poll the device for a
ready condition because writes occur at bus speed. By the time
a new bus transaction can be shifted into the device, a write
I2C Interface
The FM24C16B employs a bi-directional I2C bus protocol using
few pins or board space. Figure 2 illustrates a typical system
configuration using the FM24C16B in a microcontroller-based
system. The industry standard I2C bus is familiar to many users
but is described in this section.
By convention, any device that is sending data onto the bus is
the transmitter while the target device for this data is the receiver.
The device that is controlling the bus is the master. The master
is responsible for generating the clock signal for all operations.
Any device on the bus that is being controlled is a slave. The
FM24C16B is always a slave device.
The bus protocol is controlled by transition states in the SDA and
SCL signals. There are four conditions including START, STOP,
data bit, or acknowledge. Figure 3 on page 5 and Figure 4 on
page 5 illustrates the signal conditions that specify the four
states. Detailed timing diagrams are shown in the electrical
specifications section.
Figure 2. System Configuration using Serial (I2C) nvSRAM
V DD
RPmin = (VDD - VOLmax) / IOL
RPmax = tr / (0.8473 * Cb)
SCL
Microcontroller
SDA
SCL
SDA
FM24C16B
SCL
SDA
Other Slave Device
STOP Condition (P)
START Condition (S)
A STOP condition is indicated when the bus master drives SDA
from LOW to HIGH while the SCL signal is HIGH. All operations
using the FM24C16B should end with a STOP condition. If an
operation is in progress when a STOP is asserted, the operation
will be aborted. The master must have control of SDA in order to
assert a STOP condition.
A START condition is indicated when the bus master drives SDA
from HIGH to LOW while the SCL signal is HIGH. All commands
should be preceded by a START condition. An operation in
progress can be aborted by asserting a START condition at any
time. Aborting an operation using the START condition will ready
the FM24C16B for a new operation.
If during operation the power supply drops below the specified
VDD minimum, the system should issue a START condition prior
to performing another operation.
Document Number: 001-84450 Rev. *L
Page 4 of 17
FM24C16B
Figure 3. START and STOP Conditions
full pagewidth
SDA
SDA
SCL
SCL
S
P
STOP Condition
START Condition
Figure 4. Data Transfer on the I2C Bus
handbook, full pagewidth
P
SDA
Acknowledgement
signal from slave
MSB
SCL
S
1
2
7
9
8
1
Acknowledgement
signal from receiver
2
3
4-8
ACK
START
condition
9
ACK
All data transfers (including addresses) take place while the SCL
signal is HIGH. Except under the two conditions described
above, the SDA signal should not change while SCL is HIGH.
Acknowledge/No-acknowledge
The acknowledge takes place after the 8th data bit has been
transferred in any transaction. During this state the transmitter
should release the SDA bus to allow the receiver to drive it. The
receiver drives the SDA signal LOW to acknowledge receipt of
the byte. If the receiver does not drive SDA LOW, the condition
is a no-acknowledge and the operation is aborted.
S
or
P
STOP or
START
condition
Byte complete
Data/Address Transfer
S
The receiver would fail to acknowledge for two distinct reasons.
First is that a byte transfer fails. In this case, the no-acknowledge
ceases the current operation so that the device can be
addressed again. This allows the last byte to be recovered in the
event of a communication error.
Second and most common, the receiver does not acknowledge
to deliberately end an operation. For example, during a read
operation, the FM24C16B will continue to place data onto the
bus as long as the receiver sends acknowledges (and clocks).
When a read operation is complete and no more data is needed,
the receiver must not acknowledge the last byte. If the receiver
acknowledges the last byte, this will cause the FM24C16B to
attempt to drive the bus on the next clock while the master is
sending a new command such as STOP.
Figure 5. Acknowledge on the I2C Bus
handbook, full pagewidth
DATA OUTPUT
BY MASTER
No Acknowledge
DATA OUTPUT
BY SLAVE
Acknowledge
SCL FROM
MASTER
1
2
8
9
S
START
Condition
Document Number: 001-84450 Rev. *L
Clock pulse for
acknowledgement
Page 5 of 17
FM24C16B
Slave Device Address
The first byte that the FM24C16B expects after a START
condition is the slave address. As shown in Figure 6, the slave
address contains the device type, the page of memory to be
accessed, and a bit that specifies if the transaction is a read or
a write.
Bits 7–4 are the device type and should be set to 1010b for the
FM24C16B. These bits allow other function types to reside on
the I2C bus within an identical address range. Bits 3–1 are the
page select. It specifies the 256-byte block of memory that is
targeted for the current operation. Bit 0 is the read/write bit
(R/W). R/W = ‘1’ indicates a read operation and R/W = ‘0’
indicates a write operation.
Figure 6. Memory Slave Device Address
1
Slave ID
0
A2
A1
The FM24C16B is designed to operate in a manner very similar
to other I2C interface memory products. The major differences
result from the higher performance write capability of F-RAM
technology. These improvements result in some differences
between the FM24C16B and a similar configuration EEPROM
during writes. The complete operation for both writes and reads
is explained below.
All writes begin with a slave address, then a word address. The
bus master indicates a write operation by setting the LSB of the
slave address (R/W bit) to a ‘0’. After addressing, the bus master
sends each byte of data to the memory and the memory
generates an acknowledge condition. Any number of sequential
bytes may be written. If the end of the address range is reached
internally, the address counter will wrap from 7FFh to 000h.
LSB
0
Memory Operation
Write Operation
MSB
handbook, halfpage
1
sequential byte. If the acknowledge is not sent, the FM24C16B
will end the read operation. For a write operation, the FM24C16B
will accept 8 data bits from the master then send an
acknowledge. All data transfer occurs MSB (most significant bit)
first.
A0 R/W
Page Select
Addressing Overview (Word Address)
After the FM24C16B (as receiver) acknowledges the slave
address, the master can place the word address on the bus for
a write operation. The word address is the lower 8-bits of the
address to be combined with the 3-bits page select to specify
exactly the byte to be written. The complete 11-bit address is
latched internally. No word address occurs for a read operation,
though the 3-bit page select is latched internally. Reads always
use the lower 8-bits that are held internally in the address latch.
That is, reads always begin at the address following the previous
access. A random read address can be loaded by doing a write
operation as explained below.
After transmission of each data byte, just prior to the
acknowledge, the FM24C16B increments the internal address
latch. This allows the next sequential byte to be accessed with
no additional addressing. After the last address (7FFh) is
reached, the address latch will roll over to 000h. There is no limit
to the number of bytes that can be accessed with a single read
or write operation.
Data Transfer
After the address bytes have been transmitted, data transfer
between the bus master and the FM24C16B can begin. For a
read operation the FM24C16B will place 8 data bits on the bus
then wait for an acknowledge from the master. If the
acknowledge occurs, the FM24C16B will transfer the next
Unlike other nonvolatile memory technologies, there is no
effective write delay with F-RAM. Since the read and write
access times of the underlying memory are the same, the user
experiences no delay through the bus. The entire memory cycle
occurs in less time than a single bus clock. Therefore, any
operation including read or write can occur immediately following
a write. Acknowledge polling, a technique used with EEPROMs
to determine if a write is complete is unnecessary and will always
return a ready condition.
Internally, an actual memory write occurs after the 8th data bit is
transferred. It will be complete before the acknowledge is sent.
Therefore, if the user desires to abort a write without altering the
memory contents, this should be done using START or STOP
condition prior to the 8th data bit. The FM24C16B uses no page
buffering.
The memory array can be write-protected using the WP pin.
Setting the WP pin to a HIGH condition (VDD) will write-protect
all addresses. The FM24C16B will not acknowledge data bytes
that are written to protected addresses. In addition, the address
counter will not increment if writes are attempted to these
addresses. Setting WP to a LOW state (VSS) will disable the write
protect. WP is pulled down internally.
Figure 7 and Figure 8 on page 7 below illustrate a single-byte
and multiple-byte write cycles.
Figure 7. Single-Byte Write
By Master
Start
S
By F-RAM
Document Number: 001-84450 Rev. *L
Address & Data
Slave Address
0 A
Word Address
Stop
A
Data Byte
A
P
Acknowledge
Page 6 of 17
FM24C16B
Figure 8. Multi-Byte Write
By Master
Start
S
Address & Data
Slave Address
0 A
Stop
Word Address
A
Data Byte
By F-RAM
A
Data Byte
A
P
Acknowledge
Read Operation
There are two basic types of read operations. They are current
address read and selective address read. In a current address
read, the FM24C16B uses the internal address latch to supply
the lower 8 address bits. In a selective read, the user performs a
procedure to set these lower address bits to a specific value.
Current Address & Sequential Read
As mentioned above the FM24C16B uses an internal latch to
supply the lower 8 address bits for a read operation. A current
address read uses the existing value in the address latch as a
starting place for the read operation. The system reads from the
address immediately following that of the last operation.
To perform a current address read, the bus master supplies a
slave address with the LSB set to a ‘1’. This indicates that a read
operation is requested. The three page select bits in the slave
address specifies the block of memory that is used for the read
operation. After receiving the complete slave address, the
FM24C16B will begin shifting out data from the current address
on the next clock. The current address is the 3-bits from the slave
address combined with the 8-bits that were in the internal
address latch.
Beginning with the current address, the bus master can read any
number of bytes. Thus, a sequential read is simply a current
address read with multiple byte transfers. After each byte the
internal address counter will be incremented.
Note Each time the bus master acknowledges a byte, this
indicates that the FM24C16B should read out the next sequential
byte.
There are four ways to properly terminate a read operation.
Failing to properly terminate the read will most likely create a bus
contention as the FM24C16B attempts to read out additional
data onto the bus. The four valid methods are:
1. The bus master issues a no-acknowledge in the 9th clock
cycle and a STOP in the 10th clock cycle. This is illustrated in
the diagrams below. This is preferred.
2. The bus master issues a no-acknowledge in the 9th clock
cycle and a START in the 10th.
3. The bus master issues a STOP in the 9th clock cycle.
4. The bus master issues a START in the 9th clock cycle.
If the internal address reaches 7FFh, it will wrap around to 000h
on the next read cycle. Figure 9 and Figure 10 below show the
proper operation for current address reads.
Figure 9. Current Address Read
By Master
Start
No
Acknowledge
Address
Stop
S
Slave Address
By F-RAM
1 A
Acknowledge
Data Byte
1
P
Data
Figure 10. Sequential Read
By Master
Start
Address
No
Acknowledge
Acknowledge
Stop
S
Slave Address
By F-RAM
Document Number: 001-84450 Rev. *L
1 A
Acknowledge
Data Byte
A
Data Byte
1 P
Data
Page 7 of 17
FM24C16B
Selective (Random) Read
There is a simple technique that allows a user to select a random
address location as the starting point for a read operation. This
involves using the first two bytes of a write operation to set the
internal address followed by subsequent read operations.
To perform a selective read, the bus master sends out the slave
address with the LSB (R/W) set to 0. This specifies a write
operation. According to the write protocol, the bus master then
sends the word address byte that is loaded into the internal
address latch. After the FM24C16B acknowledges the word
address, the bus master issues a START condition. This simultaneously aborts the write operation and allows the read
command to be issued with the slave address LSB set to a ‘1’.
The operation is now a current address read.
Figure 11. Selective (Random) Read
By Master
Address
Start
Start
Address
No
Acknowledge
Acknowledge
Stop
S
Slave Address
0 A
By F-RAM
Word Address
A
S
Acknowledge
Endurance
The FM24C16B internally operates with a read and restore
mechanism. Therefore, endurance cycles are applied for each
read or write cycle. The memory architecture is based on an
array of rows and columns. Each read or write access causes an
endurance cycle for an entire row. In the FM24C16B, a row is 64
bits wide. Every 8-byte boundary marks the beginning of a new
Document Number: 001-84450 Rev. *L
Slave Address
1 A
Data Byte
A
Data Byte
1 P
Data
row. Endurance can be optimized by ensuring frequently
accessed data is located in different rows. Regardless, FRAM
read and write endurance is effectively unlimited at the 1MHz I2C
speed. Even at 3000 accesses per second to the same row,
10 years time will elapse before 1 trillion endurance cycles occur.
Page 8 of 17
FM24C16B
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –55 C to +125 C
Maximum accumulated storage time
At 125 °C ambient temperature ................................. 1000 h
At 85 °C ambient temperature ................................ 10 Years
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Supply voltage on VDD relative to VSS .........–1.0 V to +7.0 V
Input voltage .......... –1.0 V to + 7.0 V and VIN < VDD + 1.0 V
Package power
dissipation capability (TA = 25 °C) ............................... 1.0 W
Surface mount lead
soldering temperature (10 seconds) ........................ +260 C
Electrostatic Discharge Voltage [1]
Human Body Model (AEC-Q100-002 Rev. E) ..................... 2 kV
Charged Device Model (AEC-Q100-011 Rev. B) ................ 500 V
Latch-up current .................................................... > 140 mA
* Exception: The “VIN < VDD + 1.0 V” restriction does not apply
to the SCL and SDA inputs.
Operating Range
DC voltage applied to outputs
in High-Z state .................................... –0.5 V to VDD + 0.5 V
Transient voltage (< 20 ns)
on any pin to ground potential ............ –2.0 V to VDD + 2.0 V
Range
Ambient Temperature (TA)
VDD
Industrial
–40 C to +85 C
4.5 V to 5.5 V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
VDD
Power supply
IDD
Average VDD current
Test Conditions
SCL toggling
between
VDD – 0.3 V and VSS,
other inputs VSS or
VDD – 0.3 V.
Min
Typ [2]
Max
Unit
4.5
5.0
5.5
V
fSCL = 100 kHz
–
–
100
A
fSCL = 400 kHz
–
–
200
A
fSCL = 1 MHz
–
–
400
A
ISB
Standby current
SCL = SDA = VDD. All other inputs VSS
or VDD. Stop command issued.
–
4
10
A
ILI
Input leakage current
(Except WP)
VSS < VIN < VDD
–1
–
+1
A
Input leakage current (for WP)
VSS < VIN < VDD
–1
–
+100
A
ILO
Output leakage current
VSS < VIN < VDD
–1
–
+1
A
VIH
Input HIGH voltage
0.7 × VDD
–
VDD + 0.3
V
VIL
Input LOW voltage
– 0.3
–
0.3 × VDD
V
VOL
Rin
[3]
Output LOW voltage
IOL = 3 mA
–
–
0.4
V
Input resistance (WP)
For VIN = VIL (Max)
40
–
–
k
1
–
–
M
0.05 × VDD
–
–
V
For VIN = VIH (Min)
VHYS[4]
Input Hysteresis
Notes
1. Electrostatic Discharge voltages specified in the datasheet are the JEDEC standard limits used for qualifying the device. To know the maximum value device passes
for, please refer to the device qualification report available on the website.
2. Typical values are at 25 °C, VDD = VDD (typ). Not 100% tested.
3. The input pull-down circuit is strong (40 k) when the input voltage is below VIL and weak (1 M) when the input voltage is above VIH.
4. These parameters are guaranteed by design and are not tested.
Document Number: 001-84450 Rev. *L
Page 9 of 17
FM24C16B
Data Retention and Endurance
Parameter
TDR
NVC
Description
Test condition
Data retention
Endurance
Min
Max
Unit
TA = 85 C
10
–
Years
TA = 75 C
38
–
TA = 65 C
151
–
14
–
Over operating temperature
10
Cycles
Capacitance
Parameter [5]
Description
Test Conditions
CO
Output pin capacitance (SDA)
CI
Input pin capacitance
Max
Unit
8
pF
6
pF
Test Conditions
8-pin SOIC
Unit
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA/JESD51.
147
C/W
47
C/W
TA = 25 C, f = 1 MHz, VDD = VDD(typ)
Thermal Resistance
Parameter [5]
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
AC Test Loads and Waveforms
Figure 12. AC Test Loads and Waveforms
5.5 V
1.7 k
OUTPUT
100 pF
AC Test Conditions
Input pulse levels .................................10% and 90% of VDD
Input rise and fall times .................................................10 ns
Input and output timing reference levels ................0.5 × VDD
Output load capacitance ............................................ 100 pF
Note
5. These parameters are guaranteed by design and are not tested.
Document Number: 001-84450 Rev. *L
Page 10 of 17
FM24C16B
AC Switching Characteristics
Over the Operating Range
Parameter [6]
Description
Cypress
Alt.
Parameter Parameter
Min
Max
Min
Max
Min
Max
Unit
–
0.1
–
0.4
–
1.0
MHz
fSCL[7]
SCL clock frequency
tSU; STA
Start condition setup for repeated Start
4.7
–
0.6
–
0.25
–
µs
tHD;STA
Start condition hold time
4.0
–
0.6
–
0.25
–
µs
tLOW
Clock LOW period
4.7
–
1.3
–
0.6
–
µs
tHIGH
Clock HIGH period
4.0
–
0.6
–
0.4
–
µs
tSU;DAT
tSU;DATA
Data in setup
250
–
100
–
100
–
ns
tHD;DAT
tHD;DATA
Data in hold
0
–
0
–
0
–
ns
Data output hold (from SCL @ VIL)
0
–
0
–
0
–
ns
–
1000
–
300
–
300
ns
tDH
[8]
tr
Input rise time
tF[8]
tf
Input fall time
tR
–
300
–
300
–
100
ns
4.0
–
0.6
–
0.25
–
µs
SCL LOW to SDA Data Out Valid
–
3
–
0.9
–
0.55
µs
tBUF
Bus free before new transmission
4.7
–
1.3
–
0.5
–
µs
tSP
Noise suppression time constant on SCL, SDA
–
50
–
50
–
50
ns
tSU;STO
tAA
STOP condition setup
tVD;DATA
Figure 13. Read Bus Timing Diagram
tR
`
tF
tHIGH
tSP
tLOW
tSP
SCL
tSU:SDA
1/fSCL
tBUF
tHD:DAT
tSU:DAT
SDA
tDH
tAA
Stop Start
Start
Acknowledge
Figure 14. Write Bus Timing Diagram
tHD:DAT
SCL
tHD:STA
tSU:STO
tSU:DAT
tAA
SDA
Start
Stop Start
Acknowledge
Notes
6. Test conditions assume signal transition time of 10 ns or less, timing reference levels of VDD/2, input pulse levels of 0 to VDD(typ), and output loading of the specified
IOL and load capacitance shown in Figure 12.
7. The speed-related specifications are guaranteed characteristic points along a continuous curve of operation from DC to fSCL (max).
8. These parameters are guaranteed by design and are not tested.
Document Number: 001-84450 Rev. *L
Page 11 of 17
FM24C16B
Power Cycle Timing
Over the Operating Range
Parameter
Description
Min
Max
Unit
tPU
Power-up VDD(min) to first access (START condition)
1
–
ms
tPD
Last access (STOP condition) to power-down (VDD(min))
0
–
µs
tVR [9, 10]
VDD power-up ramp rate
3.3
–
µs/V
tVF [9, 10]
VDD power-down ramp rate
3.3
–
µs/V
VDD
~
~
Figure 15. Power Cycle Timing
VDD(min)
tVR
SDA
I2 C START
tVF
tPD
~
~
tPU
VDD(min)
I2 C STOP
Notes
9. Slope measured at any point on the VDD waveform.
10. Guaranteed by design.
Document Number: 001-84450 Rev. *L
Page 12 of 17
FM24C16B
Ordering Information
Ordering Code
FM24C16B-G
Package
Diagram
51-85066
Package Type
8-pin SOIC
Operating
Range
Industrial
FM24C16B-GTR
All these parts are Pb-free. Contact your local Cypress sales representative for availability of these parts.
Ordering Code Definitions
FM 24
C
16
B - G TR
Option: X = blank or TR
blank = Standard; T = Tape and Reel
Package Type: G = 8-pin SOIC
Die Revision = B
Density: 16 = 16-kbit
Voltage: C = 4.5 V to 5.5 V
I2C F-RAM
Cypress
Document Number: 001-84450 Rev. *L
Page 13 of 17
FM24C16B
Package Diagram
Figure 16. 8-pin SOIC (150 Mils) Package Outline, 51-85066
51-85066 *I
Document Number: 001-84450 Rev. *L
Page 14 of 17
FM24C16B
Acronyms
Acronym
Document Conventions
Description
Units of Measure
ACK
Acknowledge
CMOS
Complementary Metal Oxide Semiconductor
°C
degree Celsius
EIA
Electronic Industries Alliance
Hz
hertz
I2C
Inter-Integrated Circuit
Kb
kilobit
I/O
Input/Output
kHz
kilohertz
JEDEC
Joint Electron Devices Engineering Council
k
kilohm
LSB
Least Significant Bit
MHz
megahertz
MSB
Most Significant Bit
M
megaohm
NACK
No Acknowledge
A
microampere
RoHS
Restriction of Hazardous Substances
s
microsecond
R/W
Read/Write
mA
milliampere
SCL
Serial Clock Line
ms
millisecond
ns
nanosecond
SDA
Serial Data Access
ohm
SOIC
Small Outline Integrated Circuit
%
percent
WP
Write Protect
pF
picofarad
V
volt
W
watt
Document Number: 001-84450 Rev. *L
Symbol
Unit of Measure
Page 15 of 17
FM24C16B
Document History Page
Document Title: FM24C16B, 16-Kbit (2K × 8) Serial (I2C) F-RAM
Document Number: 001-84450
Rev.
ECN No.
Orig. of
Change
Submission
Date
**
3902082
GVCH
02/25/2013
New spec.
*A
3924523
GVCH
03/07/2013
Changed tPU spec value from 10 ms to 1 ms.
*B
3996669
GVCH
05/13/2013
Added Appendix A - Errata for FM24C16B.
*C
4045469
GVCH
06/30/2013
All errata items are fixed and the errata is removed.
*D
4283418
GVCH
02/19/2014
Converted to Cypress standard format.
Changed endurance value from 1012 to 1014 cycles.
Updated Maximum Ratings:
- Removed Moisture Sensitivity Level (MSL).
- Added junction temperature and latch up current.
Added Input leakage current (ILI) for WP.
Updated Data Retention and Endurance.
Added Thermal Resistance.
Removed Package Marking Scheme (top mark).
Completing Sunset Review.
*E
4272607
GVCH
03/11/2014
Typo fixed (AC Switching Characteristics): Parameter spec unit changed from
ns to µs
— tSU:STA, tHD:STA, tLOW, tHIGH, tSU:STO, tAA and tBUF
*F
4343617
GVCH
04/21/2014
Typo fixed (DC Electrical Characteristics): VOL parameter spec unit changed
from C to V.
*G
4566147
GVCH
11/10/2014
Updated Functional Description:
Added “For a complete list of related documentation, click here.” at the end.
*H
4782742
GVCH
06/01/2015
Updated Ordering Information:
Fixed Typo (Replaced “001-85066” with “51-85066” in “Package Diagram”
column).
Updated Package Diagram:
spec 51-85066 – Changed revision from *F to *G.
Updated to new template.
*I
4874535
ZSK / PSR
08/06/2015
Updated Maximum Ratings:
Removed “Maximum junction temperature”.
Added “Maximum accumulated storage time”.
Added “Ambient temperature with power applied”.
*J
5606370
GVCH
01/27/2017
Updated Maximum Ratings:
Updated Electrostatic Discharge Voltage (in compliance with AEC-Q100
standard):
Changed value of “Human Body Model” from 4 kV to 2 kV.
Changed value of “Charged Device Model” from 1.25 kV to 500 V.
Removed “Machine Model” related information.
Updated Package Diagram:
spec 51-85066 – Changed revision from *G to *H.
Updated to new template.
Completing Sunset Review.
*K
5700082
GVCH
04/19/2017
Updated Maximum Ratings:
Added Note 1 and referred the same note in “Electrostatic Discharge Voltage”.
Updated to new template.
*L
6034128
ZSK
02/12/2018
Updated tVR and tVF to 3.3uS/V spec in Power Cycle Timing table.
Updated 8-pin SOIC (150 Mils) Package Outline, 51-85066 (*H to *I).
Document Number: 001-84450 Rev. *L
Description of Change
Page 16 of 17
FM24C16B
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
PSoC®Solutions
Products
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Automotive
cypress.com/arm
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Interface
cypress.com/clocks
cypress.com/interface
Internet of Things
Memory
cypress.com/iot
cypress.com/memory
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cypress.com/mcu
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cypress.com/psoc
Power Management ICs
Cypress Developer Community
Forums | WICED IOT Forums | Projects | Video | Blogs | Training
| Components
Technical Support
cypress.com/support
cypress.com/pmic
Touch Sensing
cypress.com/touch
USB Controllers
Wireless Connectivity
PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP | PSoC 6 MCU
cypress.com/usb
cypress.com/wireless
© Cypress Semiconductor Corporation, 2013–2018. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC ("Cypress"). This document,
including any software or firmware included or referenced in this document ("Software"), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries
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Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in
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Document Number: 001-84450 Rev. *L
Revised February 12, 2018
Page 17 of 17