S-8242B Series
BATTERY PROTECTION IC
FOR 2-SERIAL-CELL PACK
N
www.sii-ic.com
Rev.2.3_01
DE
SI
G
© Seiko Instruments Inc., 2006-2013
The S-8242B Series are protection ICs for 2-serial-cell lithium-ion/lithium polymer rechargeable batteries and include highaccuracy voltage detectors and delay circuits.
These ICs are suitable for protecting 2-cell lithium-ion / lithium polymer rechargeable battery packs from overcharge,
overdischarge, and overcurrent.
Features
High-accuracy voltage detection for each cell
• Overcharge detection voltage n (n = 1, 2)
3.9 V to 4.5 V (50 mV steps)
Accuracy ±25 mV
*1
Accuracy ±50 mV
• Overcharge release voltage n (n = 1, 2)
3.8 V to 4.5 V
• Overdischarge detection voltage n (n = 1, 2)
2.0 V to 3.0 V (100 mV steps)
Accuracy ±50 mV
*2
Accuracy ±100 mV
• Overdischarge release voltage n (n = 1, 2)
2.0 V to 3.4 V
Two-level overcurrent detection (overcurrent 1, overcurrent 2)
• Overcurrent detection voltage 1
0.05 V, 0.08 V to 0.30 V (10 mV steps)
Accuracy ±15 mV
• Overcurrent detection voltage 2
1.2 V (fixed)
Accuracy ±300 mV
Delay times (overcharge, overdischarge, overcurrent) are generated by an internal circuit (external capacitors are
unnecessary).
0 V battery charge function available/unavailable are selectable.
Charger detection function
• The overdischarge hysteresis is released by detecting negative voltage at the VM pin (−0.7 V typ.) (Charger
detection function).
High-withstand voltage devices
Absolute maximum rating: 28 V
Wide operating temperature range
−40°C to +85°C
Low current consumption
Operation mode
10 μA max. (+25°C)
Power-down mode
0.1 μA max. (+25°C)
Lead-free, Sn 100%, halogen-free*3
(6)
(7)
(8)
(9)
R
FO
D
(4)
(5)
DE
(3)
MM
EN
(2)
NE
W
(1)
Overcharge release voltage = Overcharge detection voltage − Overcharge hysteresis voltage
(Overcharge hysteresis voltage n (n = 1, 2) can be selected as 0 V or from a range of 0.1 V to 0.4 V in 50 mV
steps.)
*2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage
(Overdischarge hysteresis voltage n (n = 1, 2) can be selected as 0 V or from a range of 0.1 V to 0.7 V in 100 mV
steps.)
*3. Refer to “ Product Name Structure” for details.
RE
Applications
CO
*1.
• Lithium-ion rechargeable battery packs
• Lithium polymer rechargeable battery packs
NO
T
Packages
• SNT-8A
• 8-Pin TSSOP
Seiko Instruments Inc.
1
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
Delay circuit, controller,
0 V battery charge/
charge inhibition circuit
DO
DE
SI
G
N
Block Diagram
VDD
−
+
CO
+
−
NE
W
+
−
FO
R
+
−
300 kΩ
D
MM
EN
10 kΩ
Charger
detector
DE
VM
Remark All the diodes in the figure are parasitic diodes.
NO
T
RE
CO
Figure 1
2
Seiko Instruments Inc.
VC
−
+
+
−
VSS
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
Product Name Structure
1. Product Name
x
N
xx - xxxx
DE
SI
G
S-8242B
Environmental code
U:
Lead-free (Sn 100%), halogen-free
S:
Lead-free, halogen-free
G:
Lead-free (for details, please contact our sales office)
NE
Serial code
Sequentially set from AA to ZZ
*1
W
Package name (abbreviation) and IC packing specifications
I8T1 : SNT-8A, Tape
T8T1: 8-Pin TSSOP, Tape
R
*1. Refer to the tape specifications.
SNT-8A
Environmental code = G, S
Environmental code = U
Drawing Code
Tape
Reel
PH008-A-C-SD
PH008-A-R-SD
FT008-E-C-SD
FT008-E-R-SD
FT008-E-C-SD
FT008-E-R-S1
Land
PH008-A-L-SD
⎯
NO
T
RE
CO
MM
EN
DE
8-Pin TSSOP
Package
PH008-A-P-SD
FT008-A-P-SD
FT008-A-P-SD
D
Package Name
FO
2. Package
Seiko Instruments Inc.
3
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
3. Product Name List
(1) SNT-8A Package
N
Table 1
NO
T
RE
CO
MM
EN
DE
D
FO
R
NE
W
DE
SI
G
Overcharge Overdischarge Overdischarge Overcurrent
Overcharge
Release
Detection
Release
Detection
Detection
0 V Battery
Product Name
Voltage
Voltage
Voltage
Voltage 1
Voltage
Charge
[VCL]
[VDL]
[VDU]
[VIOV1]
[VCU]
S-8242BAB-I8T1x
4.325 V
4.075 V
2.2 V
2.9 V
0.21 V
Unavailable
S-8242BAC-I8T1x
4.350 V
4.150 V
2.3 V
3.0 V
0.30 V
Available
S-8242BAD-I8T1x
4.350 V
4.350 V
2.3 V
2.9 V
0.08 V
Available
S-8242BAE-I8T1x
4.430 V
4.200 V
2.3 V
2.9 V
0.08 V
Available
S-8242BAF-I8T1x
4.300 V
4.100 V
2.0 V
2.0 V
0.20 V
Available
S-8242BAG-I8T1x
4.300 V
4.100 V
2.0 V
2.0 V
0.16 V
Available
S-8242BAH-I8T1x
4.300 V
4.100 V
2.4 V
3.0 V
0.20 V
Unavailable
S-8242BAI-I8T1x
4.250 V
4.050 V
2.4 V
3.0 V
0.15 V
Available
S-8242BAM-I8T1x
4.300 V
4.100 V
2.6 V
3.0 V
0.28 V
Unavailable
S-8242BAN-I8T1x
4.350 V
4.150 V
2.3 V
2.9 V
0.25 V
Unavailable
S-8242BAO-I8T1x
4.350 V
4.150 V
2.3 V
2.9 V
0.10 V
Available
S-8242BAQ-I8T1x
4.350 V
4.150 V
2.3 V
2.9 V
0.20 V
Unavailable
S-8242BAR-I8T1x
4.300 V
4.100 V
2.6 V
3.0 V
0.21 V
Unavailable
S-8242BAU-I8T1x
4.300 V
4.100 V
2.4 V
3.0 V
0.28 V
Unavailable
S-8242BAV-I8T1x
4.350 V
4.150 V
2.2 V
2.9 V
0.20 V
Unavailable
S-8242BAW-I8T1x
4.350 V
4.150 V
2.2 V
2.9 V
0.25 V
Unavailable
S-8242BAX-I8T1x
4.300 V
4.100 V
2.4 V
3.0 V
0.21 V
Unavailable
S-8242BAY-I8T1x
4.210 V
4.210 V
2.0 V
2.0 V
0.20 V
Unavailable
S-8242BAZ-I8T1x
4.190 V
4.190 V
2.3 V
2.9 V
0.10 V
Available
S-8242BBA-I8T1x
4.350 V
4.150 V
3.0 V
3.4 V
0.25 V
Unavailable
S-8242BBB-I8T1x
4.270 V
4.070 V
2.3 V
2.3 V
0.20 V
Available
S-8242BBC-I8T1x
4.250 V
4.050 V
2.4 V
3.0 V
0.10 V
Available
S-8242BBD-I8T1x
4.310 V
4.110 V
2.0 V
2.0 V
0.20 V
Available
S-8242BBF-I8T1x
4.350 V
4.150 V
2.0 V
2.4 V
0.25 V
Unavailable
S-8242BBH-I8T1x
4.400 V
4.200 V
2.0 V
2.7 V
0.25 V
Available
S-8242BBI-I8T1x
4.300 V
4.150 V
3.175 V
3.275 V
0.15 V
Unavailable
S-8242BBJ-I8T1x
4.275 V
4.275 V
2.4 V
2.6 V
0.10 V
Unavailable
S-8242BBK-I8T1x
4.250 V
4.050 V
2.8 V
3.0 V
0.12 V
Unavailable
S-8242BBQ-I8T1x
4.150 V
4.050 V
2.35 V
2.65 V
0.10 V
Available
S-8242BBR-I8T1x
4.275 V
3.925 V
2.8 V
3.3 V
0.05 V
Unavailable
S-8242BBW-I8T1x
4.250 V
4.050 V
2.4 V
3.0 V
0.15 V
Unavailable
S-8242BBZ-I8T1U
4.200 V
4.100 V
2.7 V
3.0 V
0.10 V
Available
Remark 1. Please contact our sales office for the products with detection voltage value other than those specified above.
2. x: G or U
3. Please select products of environmental code = U for Sn 100%, halogen-free products.
4
Seiko Instruments Inc.
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
(2) 8-Pin TSSOP Package
Table 2
NO
T
RE
CO
MM
EN
DE
D
FO
R
NE
W
DE
SI
G
N
Overcharge Overdischarge Overdischarge Overcurrent
Overcharge
Release
Detection
Release
Detection
Detection
0 V Battery
Product Name
Voltage
Voltage
Voltage
Voltage 1
Voltage
Charge
[VCL]
[VDL]
[VDU]
[VIOV1]
[VCU]
S-8242BAC-T8T1x
4.350 V
4.150 V
2.3 V
3.0 V
0.30 V
Available
S-8242BAD-T8T1U
4.350 V
4.350 V
2.3 V
2.9 V
0.08 V
Available
S-8242BAH-T8T1x
4.300 V
4.100 V
2.4 V
3.0 V
0.20 V
Unavailable
S-8242BAI-T8T1x
4.250 V
4.050 V
2.4 V
3.0 V
0.15 V
Available
S-8242BAP-T8T1x
4.100 V
3.800 V
2.2 V
2.4 V
0.30 V
Unavailable
S-8242BAR-T8T1x
4.300 V
4.100 V
2.6 V
3.0 V
0.21 V
Unavailable
S-8242BAU-T8T1x
4.300 V
4.100 V
2.4 V
3.0 V
0.28 V
Unavailable
S-8242BAV-T8T1x
4.350 V
4.150 V
2.2 V
2.9 V
0.20 V
Unavailable
S-8242BAW-T8T1x
4.350 V
4.150 V
2.2 V
2.9 V
0.25 V
Unavailable
S-8242BAX-T8T1x
4.300 V
4.100 V
2.4 V
3.0 V
0.21 V
Unavailable
S-8242BBD-T8T1U
4.310 V
4.110 V
2.0 V
2.0 V
0.20 V
Available
S-8242BBE-T8T1x
4.350 V
4.150 V
2.0 V
2.4 V
0.20 V
Unavailable
S-8242BBF-T8T1x
4.350 V
4.150 V
2.0 V
2.4 V
0.25 V
Unavailable
S-8242BBG-T8T1x
4.200 V
4.000 V
2.6 V
3.0 V
0.10 V
Available
S-8242BBL-T8T1y
4.200 V
4.000 V
2.0 V
2.7 V
0.37 V
Unavailable
S-8242BBM-T8T1x
4.150 V
4.050 V
2.5 V
3.0 V
0.20 V
Unavailable
S-8242BBO-T8T1y
4.300 V
4.100 V
2.2 V
2.9 V
0.08 V
Unavailable
S-8242BBP-T8T1y
4.300 V
4.100 V
2.2 V
2.9 V
0.10 V
Unavailable
S-8242BBS-T8T1y
4.300 V
4.100 V
2.4 V
3.0 V
0.18 V
Unavailable
S-8242BBU-T8T1y
4.200 V
4.000 V
2.6 V
3.0 V
0.30 V
Unavailable
S-8242BBV-T8T1y
4.250 V
4.050 V
2.2 V
2.6 V
0.30 V
Unavailable
S-8242BBX-T8T1y
4.250 V
4.150 V
2.5 V
3.0 V
0.10 V
Available
S-8242BCA-T8T1U
4.150 V
3.950 V
2.2 V
2.6 V
0.30 V
Unavailable
S-8242BCB-T8T1U
4.250 V
4.100 V
3.0 V
3.0 V
0.20 V
Available
S-8242BCC-T8T1U
4.400 V
4.100 V
2.4 V
3.0 V
0.28 V
Unavailable
S-8242BCD-T8T1U
4.450 V
4.150 V
2.0 V
2.4 V
0.25 V
Unavailable
S-8242BCE-T8T1U
4.450 V
4.250 V
2.3 V
2.7 V
0.28 V
Unavailable
S-8242BCF-T8T1U
4.500 V
4.300 V
2.2 V
2.4 V
0.25 V
Unavailable
S-8242BCG-T8T1U
4.450 V
4.350 V
2.3 V
2.7 V
0.28 V
Unavailable
S-8242BCH-T8T1U
4.500 V
4.400 V
2.2 V
2.4 V
0.25 V
Unavailable
Remark 1. Please contact our sales office for the products with detection voltage value other than those specified above.
2. x: G or U
3. y: S or U
4. Please select products of environmental code = U for Sn 100%, halogen-free products.
Seiko Instruments Inc.
5
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
Pin Configurations
Table 3
Pin No.
8
2
7
3
6
4
5
Description
Connection of charge control FET gate
(CMOS output)
Connection of discharge control FET gate
2
DO
(CMOS output)
NC*1
3
No connection
Connection for negative power supply input
4
VSS
and negative voltage of battery 2
Connection for negative voltage of battery 1
5
VC
and positive voltage of battery 2
Connection for positive power supply input
6
VDD
and positive voltage of battery 1
NC*1
7
No connection
Voltage detection between VM and VSS
8
VM
(overcurrent/charger detection pin)
*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
1
FO
R
NE
W
Figure 2
CO
DE
SI
G
1
Symbol
N
SNT-8A
Top view
8-Pin TSSOP
Top view
Connection of charge control FET gate
(CMOS output)
Connection of discharge control FET gate
2
DO
(CMOS output)
NC*1
3
No connection
Connection for negative power supply input
4
VSS
and negative voltage of battery 2
Connection for negative voltage of battery 1
5
VC
and positive voltage of battery 2
Connection for positive power supply input
6
VDD
and positive voltage of battery 1
NC*1
7
No connection
Voltage detection between VM and VSS
8
VM
(overcurrent/charger detection pin)
*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
1
CO
Remark For the external views, refer to the package drawings.
NO
T
RE
CO
Figure 3
6
Description
MM
EN
8
7
6
5
Symbol
Table 4
DE
1
2
3
4
Pin No.
D
Remark For the external views, refer to the package drawings.
Seiko Instruments Inc.
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
Absolute Maximum Ratings
N
Table 5
(Ta = 25°C unless otherwise specified)
Symbol
Applied pin
Absolute Maximum Ratings
DE
SI
G
Item
Unit
VDS
VDD
VSS−0.3 to VSS+12
V
VC input pin voltage
VVC
VC
VSS−0.3 to VDD+0.3
V
VM pin input voltage
VVM
VM
VDD−28 to VDD+0.3
V
DO pin output voltage
VDO
DO
VSS−0.3 to VDD+0.3
V
CO pin output voltage
VCO
CO
VVM−0.3 to VDD+0.3
450*1
700*1
−40 to +85
V
mW
mW
°C
−55 to +125
°C
PD
⎯
Topr
⎯
Storage temperature
Tstg
⎯
The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
FO
Caution
R
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Board name: JEDEC STANDARD51-7
NE
SNT-8A
Power dissipation
8-Pin TSSOP
Operating ambient temperature
W
Input voltage between VDD and VSS
D
400
DE
600
8-Pin TSSOP
MM
EN
Power Dissipation (PD) [mW]
800
200
SNT-8A
0
CO
0
100
150
50
Ambient Temperature (Ta) [°C]
NO
T
RE
Figure 4 Power Dissipation of Package (When mounted on board)
Seiko Instruments Inc.
7
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
Electrical Characteristics
Table 6
Symbol
Condition
Min.
Typ.
[DETECTION VOLTAGE]
3.90 V to 4.50 V, Adjustable
Overcharge release voltage n
VCLn
3.80 V to 4.50 V, Adjustable
Overdischarge detection voltage n
VDLn
2.0 V to 3.0 V, Adjustable
Overdischarge release voltage n
VDUn
2.0 V to 3.40 V, Adjustable
Overcurrent detection voltage 1
VIOV1
0.05 V to 0.30 V, Adjustable
VCUn
–0.025
VCLn
–0.05
VDLn
–0.05
VDUn
–0.10
VIOV1
–0.015
0.9
–1.0
–1.0
–0.5
Unit
Test
Test
condition circuit
VCUn
+0.025
VCLn
+0.05
VDLn
+0.05
VDUn
+0.10
VIOV1
+0.015
1.5
–0.4
1.0
0.5
V
1
1
V
1
1
V
2
2
W
VCUn
V
2
2
VIOV1
V
3
2
VCUn
VCLn
VDLn
VDUn
NE
Overcharge detection voltage n
Max.
DE
SI
G
Item
N
(Ta = 25°C unless otherwise specified)
NO
T
RE
CO
MM
EN
DE
D
FO
R
Overcurrent detection voltage 2
VIOV2
⎯
1.2
V
3
2
Charger detection voltage
VCHA
⎯
–0.7
V
4
2
*3
Temperature coefficient 1*1
0
mV/°C
⎯
⎯
TCOE1 Ta = 0°C to 50°C
*3
*2
Temperature coefficient 2
0
mV/°C
⎯
⎯
TCOE2 Ta = 0°C to 50°C
[DELAY TIME]
Overcharge detection delay time
tCU
⎯
0.92
1.15
1.38
s
9
2
Overdischarge detection delay time
tDL
⎯
115
144
173
ms
9
2
Overcurrent detection delay time 1
tIOV1
⎯
7.2
9
11
ms
10
2
Overcurrent detection delay time 2
tIOV2
FET gate capacitance = 2000 pF
220
300
380
μs
10
2
[0 V BATTERY CHARGE FUNCTION]
0 V charge starting charger voltage
V0CHA 0 V charge available
1.2
⎯
⎯
V
11
2
0 V battery charge inhibition battery voltage
V0INH 0 V charge unavailable
⎯
⎯
0.5
V
12
2
[INTERNAL RESISTANCE]
Resistance between VM and VDD
RVMD V1 = V2 = 1.5 V, VVM = 0 V
100
300
900
kΩ
6
3
Resistance between VM and VSS
RVMS V1 = V2 = 3.5 V, VVM = 1.0 V
5
10
20
kΩ
6
3
[INPUT VOLTAGE]
Operating voltage between VDD and VSS
VDSOP1 Internal circuit operating voltage
1.5
⎯
10
V
⎯
⎯
Operating voltage between VDD and VM
VDSOP2 Internal circuit operating voltage
1.5
⎯
28
V
⎯
⎯
[INPUT CURRENT]
Current consumption during operation
IOPE
V1 = V2 = 3.5 V, VVM = 0 V
⎯
5
10
μA
5
3
Current consumption at power down
IPDN
V1 = V2 = 1.5 V, VVM = 3.0 V
⎯
⎯
0.1
μA
5
3
VC pin current
IVC
V1 = V2 = 3.5 V, VVM = 0 V
–0.3
0
0.3
μA
5
3
[OUTPUT RESISTANCE]
CO pin H resistance
RCOH VCO = VDD–0.5 V
2
4
8
kΩ
7
4
CO pin L resistance
RCOL VCO = VVM+0.5 V
2
4
8
kΩ
7
4
DO pin H resistance
RDOH VDO = VDD–0.5 V
2
4
8
kΩ
8
4
DO pin L resistance
RDOL VDO = VSS +0.5 V
2
4
8
kΩ
8
4
*1. Voltage temperature coefficient 1: Overcharge detection voltage
*2. Voltage temperature coefficient 2: Overcurrent detection voltage 1
*3. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
8
Seiko Instruments Inc.
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
Test Circuits
DE
SI
G
N
Caution Unless otherwise specified, the output voltage levels “H” and “L” at CO pin (VCO) and DO pin (VDO) are
judged by the threshold voltage (1.0 V) of the N-channel FET. Judge the CO pin level with respect to
VVM and the DO pin level with respect to VSS.
1. Overcharge Detection Voltage, Overcharge Release Voltage
(Test Condition 1, Test Circuit 1)
FO
R
NE
W
Overcharge detection voltage 1 (VCU1) is defined as the voltage between the VDD pin and VC pin at which VCO goes
from “H” to “L” when the voltage V1 is gradually increased from the starting condition of V1 = V2 = VCU–0.05 V, V3 = 0
V. Overcharge release voltage 1 (VCL1) is defined as the voltage between the VDD and VC pins at which VCO goes
from “L” to “H” when setting V2 = 3.5 V and the voltage V1 is then gradually decreased. Overcharge hysteresis
voltage 1 (VHC1) is defined as the difference between overcharge detection voltage 1 (VCU1) and overcharge release
voltage 1 (VCL1).
Overcharge detection voltage 2 (VCU2) is defined as the voltage between the VC pin and VSS pin at which VCO goes
from “H” to “L” when the voltage V2 is gradually increased from the starting condition of V1 = V2 = VCU–0.05 V, V3 = 0
V. Overcharge release voltage 2 (VCL2) is defined as the voltage between the VC and VSS pins at which VCO goes
from “L” to “H” when setting V1 = 3.5 V and the voltage V2 is then gradually decreased. Overcharge hysteresis
voltage 2 (VHC2) is defined as the difference between overcharge detection voltage 2 (VCU2) and overcharge release
voltage 2 (VCL2).
2. Overdischarge Detection Voltage, Overdischarge Release Voltage
(Test Condition 2, Test Circuit 2)
MM
EN
DE
D
Overdischarge detection voltage 1 (VDL1) is defined as the voltage between the VDD pin and VC pin at which VDO
goes from “H” to “L” when the voltage V1 is gradually decreased from the starting condition of V1 = V2 = 3.5 V, V3 = 0
V. Overdischarge release voltage 1 (VDU1) is defined as the voltage between the VDD pin and VC pin at which VDO
goes from “L” to “H” when setting V2 = 3.5 V and the voltage V1 is then gradually increased. Overdischarge
hysteresis voltage 1 (VHD1) is defined as the difference between overdischarge release voltage 1 (VDU1) and
overdischarge detection voltage 1 (VDL1).
Overdischarge detection voltage 2 (VDL2) is defined as the voltage between the VC pin and VSS pin at which VDO
goes from “H” to “L” when the voltage V2 is gradually decreased from the starting condition of V1 = V2 = 3.5 V, V3 = 0
V. Overdischarge release voltage 2 (VDU2) is defined as the voltage between the VC pin and VSS pin at which VDO
goes from “L” to “H” when setting V1 = 3.5 V and the voltage V2 is then gradually increased. Overdischarge
hysteresis voltage 2 (VHD2) is defined as the difference between overdischarge release voltage 2 (VDU2) and
overdischarge detection voltage 2 (VDL2).
CO
3. Overcurrent Detection Voltage 1, Overcurrent Detection Voltage 2
(Test Condition 3, Test Circuit 2)
NO
T
RE
Overcurrent detection voltage 1 (VIOV1) is defined as the voltage between the VM pin and VSS pin whose delay time
for changing VDO from “H” to “L” lies between the minimum and the maximum value of overcurrent delay time 1 when
the voltage V3 is increased rapidly within 10 μs from the starting condition of V1 = V2 = 3.5 V, V3 = 0 V.
Overcurrent detection voltage 2 (VIOV2) is defined as the voltage between the VM pin and VSS pin whose delay time
for changing VDO from “H” to “L” lies between the minimum and the maximum value of overcurrent delay time 2 when
the voltage V3 is increased rapidly within 10 μs from the starting condition of V1 = V2 = 3.5 V, V3 = 0 V.
4. Charger Detection Voltage
(Test Condition 4, Test Circuit 2)
The charger detection voltage (VCHA) is defined as the voltage between the VM pin and VSS pin at which VDO goes
from “L” to “H” when the voltage V3 is gradually decreased from 0 V after the voltage V1 is gradually increased from
the starting condition of V1 = 1.8 V, V2 = 3.5 V, V3 = 0 V until the voltage V1 becomes VDL1 + (VHD1/2).
The charger detection voltage can be measured only in a product whose overdischarge hysteresis VHD ≠ 0 V.
Seiko Instruments Inc.
9
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
5. Operating Current Consumption, VC Pin Current, Power-down Current Consumption
(Test Condition 5, Test Circuit 3)
DE
SI
G
N
The operating current consumption (IOPE) is the current ISS that flows through the VSS pin and the VC pin current (IVC)
is the current IC that flows through the VC pin under the set conditions of V1 = V2 = 3.5 V and S1:OFF, S2:ON
(normal status).
The power-down current consumption (IPDN) is the current ISS that flows through the VSS pin under the set conditions
of V1 = V2 = 1.5 V and S1:ON, S2:OFF (overdischarge status).
6. Resistance between VM and VDD, Resistance between VM and VSS
(Test Condition 6, Test Circuit 3)
NE
W
The resistance between VM and VDD (RVMD) is the resistance between VM and VDD pins under the set conditions of
V1 = V2 = 1.5 V and S1:OFF, S2:ON.
The resistance between VM and VSS (RVMS) is the resistance between VM and VSS pins under the set conditions of
V1 = V2 = 3.5 V and S1:ON, S2:OFF.
7. CO Pin H Resistance, CO Pin L Resistance
(Test Condition 7, Test Circuit 4)
R
The CO pin H resistance (RCOH) is the resistance at the CO pin under the set conditions of V1 = V2 = 3.5 V, V4 = 6.5 V.
The CO pin L resistance (RCOL) is the resistance at the CO pin under the set conditions of V1 = V2 = 4.5 V, V4 = 0.5 V.
FO
8. DO Pin H Resistance, DO Pin L Resistance
(Test Condition 8, Test Circuit 4)
D
The DO pin H resistance (RDOH) is the resistance at the DO pin under the set conditions of V1 = V2 = 3.5 V, V5 = 6.5 V.
The DO pin L resistance (RDOL) is the resistance at the DO pin under the set conditions of V1 = V2 = 1.8 V, V5 = 0.5 V.
DE
9. Overcharge Detection Delay Time, Overdischarge Detection Delay Time
(Test Condition 9, Test Circuit 2)
MM
EN
The overcharge detection delay time (tCU) is the time needed for VCO to change from “H” to “L” just after the voltage
V1 momentarily increases within 10 μs from overcharge detection voltage 1 (VCU1) − 0.2 V to overcharge detection
voltage 1 (VCU1) + 0.2 V under the set conditions of V1 = V2 = 3.5 V, V3 = 0 V.
The overdischarge detection delay time (tDL) is the time needed for VDO to change from “H” to “L” just after the voltage
V1 momentarily decreases within 10 μs from overdischarge detection voltage 1 (VDL1) + 0.2 V to overdischarge
detection voltage 1 (VDL1) − 0.2 V under the set condition of V1 = V2 = 3.5 V, V3 = 0 V.
10. Overcurrent Detection Delay Time 1, Overcurrent Detection Delay Time 2
(Test Condition 10, Test Circuit 2)
RE
CO
Overcurrent detection delay time 1 (tIOV1) is the time needed for VDO to go to “L” after the voltage V3 momentarily
increases within 10 μs from 0 V to VIOV1 + 0.1 V under the set conditions of V1 = V2 = 3.5 V, V3 = 0 V.
Overcurrent detection delay time 2 (tIOV2) is the time needed for VDO to go to “L” after the voltage V3 momentarily
increases within 10 μs from 0 V to 2.0 V under the set conditions of V1 = V2 = 3.5 V, V3 = 0 V.
11. 0 V Charge Starting Charger Voltage (Products in Which 0 V Charge Is Available)
(Test Condition 11, Test Circuit 2)
NO
T
The 0 V charge starting charger voltage (V0CHA) is defined as the voltage between the VDD pin and VM pin at which
VCO goes to “H” (VVM + 0.1 V or higher) when the voltage V3 is gradually decreased from the starting condition of V1
= V2 = V3 = 0 V.
10
Seiko Instruments Inc.
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
12. 0 V Charge Inhibition Battery Voltage (Products in Which 0 V Charge Is Unavailable)
(Test Condition 12, Test Circuit 2)
DE
SI
G
N
The 0 V charge inhibition charger voltage (V0INH) is defined as the voltage between the VDD pin and VSS pin at which
VCO goes to “H” (VVM + 0.1 V or higher) when the voltages V1 and V2 are gradually increased from the starting
condition of V1 = V2 = 0 V, V3 = −4 V.
R1 = 100 Ω
VDD
S-8242B Series
CO
VC
VM
C1 = 1 μF
V1
V2
V
DO
VSS
NE
W
V
V3
VM
V
DO
A
FO
A
VSS
V1
V2
DE
V3
VDD
S-8242B Series
CO
VC
D
V
R
Figure 5 Test circuit 1
MM
EN
Figure 6 Test circuit 2
S1
A
VM
VDD
S-8242B Series
CO
VC
A
DO
VSS
A
A
VM
VDD
S-8242B Series
CO
VC
A
A
DO
A
CO
S2
V2
Figure 7 Test circuit 3
RE
NO
T
V1
V4
VSS
V1
V2
V5
Figure 8 Test circuit 4
Seiko Instruments Inc.
11
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
Operation
N
Remark Refer to “ Battery Protection IC Connection Example”.
DE
SI
G
1. Normal Status
This IC monitors the voltage of the battery connected between the VDD and VSS pins and the voltage difference
between the VM and VSS pins to control charging and discharging. When the battery voltage is in the range from
overdischarge detection voltage n (VDLn) to overcharge detection voltage n (VCUn), and the VM pin voltage is in the
range from the charger detection voltage (VCHA) to overcurrent detection voltage 1 (VIOV1), the IC turns both the
charging and discharging control FETs on. This condition is called the normal status, and in this condition charging
and discharging can be carried out freely.
W
Caution When the battery is connected for the first time, discharging may not be enabled. In this case,
NE
Short the VM pin and VSS pin, or
Set the VM pin’s voltage at the level of the charger detection voltage (VCHA) or more and the
overcurrent detection voltage 1 (VIOV1) or less by connecting the charger
R
The IC returns to the normal status.
FO
2. Overcharge Status
(1)
When the battery voltage falls below overcharge release voltage n (VCLn), the S-8242B Series turns the charging
control FET on and returns to the normal status.
When a load is connected and discharging starts, the S-8242B Series turns the charging control FET on and
returns to the normal status. Just after the load is connected and discharging starts, the discharging current
flows through the parasitic diode in the charging control FET. At this moment the VM pin potential becomes Vf,
the voltage for the parasitic diode, higher than the VSS level. When the battery voltage goes under overcharge
detection voltage n (VCUn) and provided that the VM pin voltage is higher than overcurrent detection voltage 1,
the S-8242B Series releases the overcharge condition.
MM
EN
(2)
DE
D
When the battery voltage becomes higher than overcharge detection voltage n (VCUn) during charging in the normal
status and detection continues for the overcharge detection delay time (tCU) or longer, the S-8242B Series turns the
charging control FET off to stop charging. This condition is called the overcharge status.
The overcharge status is released in the following two cases ((1) and (2)).
RE
CO
Caution 1. If the battery is charged to a voltage higher than overcharge detection voltage n (VCUn) and the
battery voltage does not fall below overcharge detection voltage n (VCUn) even when a heavy
load is connected, overcurrent 1 and overcurrent 2 do not function until the battery voltage falls
below overcharge detection voltage n (VCUn). Since an actual battery has an internal impedance
of tens of mΩ, the battery voltage drops immediately after a heavy load that causes overcurrent
is connected, and overcurrent 1 and overcurrent 2 function.
NO
T
2. When a charger is connected after overcharge detection, the overcharge status is not released
even if the battery voltage is below overcharge release voltage n (VCLn). The overcharge status
is released when the VM pin voltage goes over the charger detection voltage (VCHA) by removing
the charger.
12
Seiko Instruments Inc.
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
3. Overdischarge Status
DE
SI
G
N
When the battery voltage falls below overdischarge detection voltage n (VDLn) during discharging in the normal status
and detection continues for the overdischarge detection delay time (tDL) or longer, the S-8242B Series turns the
discharging control FET off to stop discharging. This condition is called the overdischarge status. When the
discharging control FET is turned off, the VM pin voltage is pulled up by the resistor between the VM and VDD pins in
the IC (RVMD). When the voltage difference between the VM and VSS pins is 1.3 V (typ.) or higher, the current
consumption is reduced to the power-down current consumption (IPDN). This condition is called the power-down
status.
The power-down status is released when a charger is connected and the voltage difference between the VM and
VSS pins becomes 1.3 V (typ.) or lower. Moreover, when the battery voltage becomes overdischarge detection
voltage n (VDLn) or higher, the S-8242B Series turns the discharging FET on and returns to the normal status.
W
4. Charger Detection
FO
R
NE
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is lower
than the charger detection voltage (VCHA), the overdischarge hysteresis is released via the charge detection function;
therefore, the S-8242B Series releases the overdischarge status and turns the discharging control FET on when the
battery voltage becomes equal to or higher than overdischarge detection voltage n (VDLn) since the charger detection
function works. This action is called charger detection.
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is not
lower than the charger detection voltage (VCHA), the S-8242B Series releases the overdischarge status when the
battery voltage reaches overdischarge release voltage n (VDUn) or higher.
5. Overcurrent Status
The impedance that enables automatic restoration varies depending on the battery voltage and the
set value of overcurrent detection voltage 1.
NO
T
RE
CO
Caution
MM
EN
DE
D
When a battery in the normal status is in the status where the voltage of the VM pin is equal to or higher than the
overcurrent detection voltage because the discharge current is higher than the specified value and the status lasts for
the overcurrent detection delay time, the discharge control FET is turned off and discharging is stopped. This status
is called the overcurrent status.
In the overcurrent status, the VM and VSS pins are shorted by the resistor between VM and VSS (RVMS) in the IC.
However, the voltage of the VM pin is at the VDD potential due to the load as long as the load is connected. When the
load is disconnected, the VM pin returns to the VSS potential.
This IC detects the status when the impedance between the EB+ pin and EB− pin (Refer to Figure 13) increases and
is equal to the impedance that enables automatic restoration and the voltage at the VM pin returns to overcurrent
detection voltage 1 (VIOV1) or lower and the overcurrent status is restored to the normal status.
Seiko Instruments Inc.
13
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
6. 0 V Battery Charge Function
Some battery providers do not recommend charging for a completely self-discharged battery.
Please ask the battery provider to determine whether to enable or inhibit the 0 V battery charge
function.
W
Caution
DE
SI
G
N
This function is used to recharge a connected battery whose voltage is 0 V due to self-discharge. When the 0 V
battery charge starting charger voltage (V0CHA) or a higher voltage is applied between the EB+ and EB− pins by
connecting a charger, the charging control FET gate is fixed to the VDD pin voltage.
When the voltage between the gate and source of the charging control FET becomes equal to or higher than the turnon voltage due to the charger voltage, the charging control FET is turned on to start charging. At this time, the
discharging control FET is off and the charging current flows through the internal parasitic diode in the discharging
control FET. When the battery voltage becomes equal to or higher than overdischarge release voltage n (VDUn), the
S-8242B Series enters the normal status.
NE
7. 0 V Battery Charge Inhibition Function
Some battery providers do not recommend charging for a completely self-discharged battery.
Please ask the battery provider to determine whether to enable or inhibit the 0 V battery charge
function.
NO
T
RE
CO
MM
EN
DE
D
Caution
FO
R
This function inhibits recharging when a battery that is internally short-circuited (0 V) is connected. When the battery
voltage (The voltage between VDD and VSS pins) is the 0 V battery charge inhibition battery voltage (V0INH) or lower,
the charging control FET gate is fixed to the EB− pin voltage to inhibit charging. When the battery voltage is the 0 V
battery charge inhibition battery voltage (V0INH) or higher, charging can be performed.
14
Seiko Instruments Inc.
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
8. Delay Circuit
N
The detection delay times are determined by dividing a clock of approximately 3.5 kHz by the counter.
DE
SI
G
Remark 1. The overcurrent detection delay time 2 (tIOV2) starts when the overcurrent detection voltage 1 (VIOV1) is
detected. When the overcurrent detection voltage 2 (VIOV2) is detected over the overcurrent detection
delay time 2 (tIOV2) after the detection of overcurrent detection voltage 1 (VIOV1), the S-8242B turns the
discharging control FET off within tIOV2 from the time of detecting VIOV2.
VDD
W
DO pin
tD
0 ≤ tD ≤ tIOV2
NE
VSS
Overcurrent detection delay time 2 (tIOV2)
VDD
R
VIOV2
Time
VM pin
FO
VIOV1
Time
D
VSS
DE
Figure 9
NO
T
RE
CO
MM
EN
2. When the overcurrent is detected and continues for longer than the overdischarge detection delay time
(tDL) without releasing the load, the condition changes to the power-down condition when the battery
voltage falls below the overdischarge detection voltage n (VDLn). When the battery voltage falls below
the overdischarge detection voltage n (VDLn) due to the overcurrent, the S-8242B Series turns the
discharging control FET off by the overcurrent detection. In this case the recovery of the battery voltage
is so slow that if the battery voltage after the overdischarge detection delay time (tDL) is still lower than
the overdischarge detection voltage n (VDLn), the S-8242B Series shifts to the power-down condition.
Seiko Instruments Inc.
15
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
Timing Chart
DE
SI
G
N
1. Overcharge Detection, Overdischarge Detection
VCUn
VCLn
Battery
voltage
VDUn
VDLn
(n= 1, 2)
W
VDD
NE
DO pin
voltage
VSS
R
VDD
FO
CO pin
voltage
VSS
D
VEB−
VIOV1
VSS
VCHA
VEB−
Charger connection
Load connection
Overcharge detection
delay time(tCU)
(1)
*1
Overdischarge detection
delay time (tDL)
(2)
(1)
CO
Status
MM
EN
VM pin
voltage
DE
VDD
RE
*1. (1) : Normal status
(2) : Overcharge status
(3) : Overdischarge status
NO
T
Remark The charger is assumed to charge with a constant current.
16
Figure 10
Seiko Instruments Inc.
(3)
(1)
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
N
2. Overcurrent Detection
DE
SI
G
VCUn
VCLn
Battery
voltage
VDUn
VDLn
(n= 1, 2)
VDD
NE
W
DO pin
voltage
VSS
CO pin
voltage
R
VDD
FO
VSS
VM pin
voltage
MM
EN
DE
VIOV2
VIOV1
VSS
Charger
connection
Status
D
VDD
Overcurrent detection
delay time 2 (tIOV2)
Overcurrent detection
delay time 1 (tIOV1)
(1)
*1
(2)
(1)
(2)
(1)
CO
*1. (1) : Normal status
(2) : Overcurrent status
Remark The charger is assumed to charge with a constant current.
NO
T
RE
Figure 11
Seiko Instruments Inc.
17
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
VCUn
VCLn
DE
SI
G
Battery
voltage
N
3. Charger Detection
VDUn
VDLn
(n= 1, 2)
VDD
NE
W
DO pin
voltage
VSS
VDD
R
CO pin
voltage
FO
VSS
VSS
VCHA
DE
VM pin
voltage
D
VDD
Load connection
MM
EN
Charger connection
Overdischarge detection delay time (tDL)
Status
(1)
*1
(2)
CO
*1. (1) : Normal status
(2) : Overdischarge status
Remark The charger is assumed to charge with a constant current.
NO
T
RE
Figure 12
18
Seiko Instruments Inc.
VM pin voltage < VCHA
Overdischarge detection (VDL)
(1)
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
EB+
VDD
C1
Battery 1
R2
S-8242B Series
VC
C2
Battery 2
VSS
DO
CO
VM
DE
SI
G
R1
N
Battery Protection IC Connection Example
NE
FET2
W
R3
FET1
R
Figure 13
EB−
FET2
Purpose
ESD protection,
For power fluctuation
Resistor
C1
Capacitor For power fluctuation
Typ.
Max.
⎯
⎯
⎯
⎯
⎯
*1
10 Ω
⎯
*1
0.47 μF
*1
100 Ω
220 Ω
1 μF
10 μF
MM
EN
R1
Min.
D
FET1
Parts
N-channel
Discharge control
MOS FET
N-channel
Charge control
MOS FET
DE
Symbol
FO
Table 7 Constants for External Components
*1
Remark
*2
Threshold voltage≤Overdischarge detection voltage
*3
Gate to source withstanding voltage≥Charger voltage
*2
Threshold voltage≤Overdischarge detection voltage
*3
Gate to source withstanding voltage≥Charger voltage
Resistance should be as small as possible to avoid lowering
the overcharge detection accuracy due to current
*4
consumption.
Connect a capacitor of 0.47 μF or higher between VDD and
*5
VSS.
ESD protection,
*1
*1
1 kΩ
300 Ω
⎯
1 kΩ
For power fluctuation
*1
*1
0.022 μF 0.1 μF 1.0 μF
C2
Capacitor For power fluctuation
⎯
Protection for reverse
Select as large a resistance as possible to prevent current
R3
Resistor
300 Ω
2 kΩ
4 kΩ
*6
when a charger is connected in reverse.
connection of a charger
*1. Please set up a filter constant to be R2 × C2 ≥ 20 μF • Ω, and to be R1 × C1 = R2 × C2.
*2. If the threshold voltage of a FET is low, the FET may not cut the charging current.
If a FET with a threshold voltage equal to or higher than the overdischarge detection voltage is used, discharging may be
stopped before overdischarge is detected.
*3. If the withstanding voltage between the gate and source is lower than the charger voltage, the FET may be destroyed.
*4. If R1 has a high resistance, the voltage between VDD and VSS may exceed the absolute maximum rating when a
charger is connected in reverse since the current flows from the charger to the IC.
Insert a resistor of 10 Ω or higher to R1 for ESD protection.
*5. If a capacitor of less than 0.47 μF is connected to C1, DO pin may oscillate when load short-circuiting is detected. Be
sure to connect a capacitor of 0.47 μF or higher to C1.
*6. If R3 has a resistance higher than 4 kΩ, the charging current may not be cut when a high-voltage charger is connected.
Resistor
NO
T
RE
CO
R2
Caution 1. The above constants may be changed without notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above
example of connection. In addition, the example of connection shown above and the constant do not
guarantee proper operation. Perform through evaluation using the actual application to set the constant.
Seiko Instruments Inc.
19
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
Precautions
N
• The application conditions for the input voltage, output voltage, and load current should not exceed the package power
dissipation.
DE
SI
G
• When connecting a battery and the protection circuit, the output voltage of the DO pin (VDO) may become “L” (initial
state). In this case,
Short the VM and VSS pins or,
Set the VM pin’s voltage at the level of the charger detection voltage (VCHA) or more and the overcurrent detection
voltage 1 (VIOV1) or less by connecting the charger
The output voltage of the DO pin (VDO) is set to “H” (normal status).
W
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
NO
T
RE
CO
MM
EN
DE
D
FO
R
NE
• SII claims no responsibility for any and all disputes arising out of or in connection with any infringement by products
including this IC of patents owned by a third party.
20
Seiko Instruments Inc.
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
(1) Current consumption
1. IOPE − VDD
2. IOPE − Ta
10
10
8
8
6
4
6
4
2
2
0
−40 −25
0
3
4
5
7
6
8
9
10
0
W
2
DE
SI
G
12
IOPE [μA]
IOPE [μA]
12
NE
VDD [V]
3. IPDN − VDD
25
50
75 85
50
75 85
Ta [°C]
4. IPDN − Ta
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
−40 −25
2
3
4
5
6
7
8
9
D
FO
IPDN [μA]
R
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
10
0
25
DE
IPDN [μA]
N
Characteristics (Typical Data)
VDD [V]
Ta [°C]
0
25
50
VCL [V]
MM
EN
CO
4.350
4.345
4.340
4.335
4.330
4.325
4.320
4.315
4.310
4.305
4.300
−40 −25
75 85
RE
VCU [V]
(2) Overcharge detection/release voltage, overdischarge detection/release voltage, overcurrent detection voltage, and
delay time
1. VCU − Ta
2. VCL − Ta
4.125
4.115
4.105
4.095
4.085
4.075
4.065
4.055
4.045
4.035
4.025
−40 −25
0
Ta [°C]
3. VDU − Ta
VDL [V]
VDU [V]
2.90
2.85
0
75 85
50
75 85
Ta [°C]
2.95
2.80
−40 −25
50
4. VDL − Ta
NO
T
3.00
25
25
50
75 85
2.25
2.24
2.23
2.22
2.21
2.20
2.19
2.18
2.17
2.16
2.15
−40 −25
Ta [°C]
0
25
Ta [°C]
Seiko Instruments Inc.
21
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
6. tDL − Ta
1.42
1.37
1.32
1.27
1.22
1.17
1.12
1.07
1.02
0.97
0.92
−40 −25
185
N
175
155
145
135
125
0
25
50
115
−40 −25
75 85
8. VIOV1 − Ta
0.225
0.220
VIOV1 [V]
0.205
0.205
4
5
6
7
8
0.195
−40 −25
D
VDD [V]
9
FO
0.200
0.195
9. VIOV2 − VDD
0
DE
1.4
1.2
1.1
1.0
4
5
MM
EN
1.3
50
75 85
50
75 85
Ta [°C]
7
6
8
1.5
1.4
1.3
1.2
1.1
1.0
0.9
−40 −25
9
0
CO
12. tIOV1 − Ta
6
tIOV1 [ms]
RE
NO
T
5
7
25
Ta [°C]
VDD [V]
11. tIOV1 − VDD
tIOV1 [ms]
25
10. VIOV2 − Ta
1.5
VIOV2 [V]
0.210
R
0.210
VIOV2 [V]
VIOV1 [V]
0.215
0.200
22
75 85
0.220
0.215
4
50
NE
0.225
10.8
10.4
10.0
9.6
9.2
8.8
8.4
8.0
7.6
7.2
25
Ta [°C]
7. VIOV1 − VDD
0.9
0
W
Ta [°C]
DE
SI
G
165
tDL [ms]
tCU [s]
5. tCU − Ta
Rev.2.3_01
8
9
10.8
10.4
10.0
9.6
9.2
8.8
8.4
8.0
7.6
7.2
−40 −25
0
25
Ta [°C]
VDD [V]
Seiko Instruments Inc.
50
75 85
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
0.36
0.34
0.34
0.32
0.32
0.30
0.28
0.26
0.30
0.28
0.26
0.24
0.24
0.22
−40 −25
0.22
4
5
6
7
8
9
1.6
−0.2
1.4
−0.4
1.2
1.0
ICOL [mA]
R
−0.6
−0.8
0.8
FO
−1.0
−1.2
−1.4
0.6
0.4
0.2
1
2
3
4
5
3. IDOH − VDO
−0.4
−0.6
−0.8
−1.0
−1.2
1
2
3
4
CO
0
MM
EN
0
−0.2
7
DE
VCO [V]
6
5
6
0
D
0
0
1
2
3
4
5
6
7
8
9
VCO [V]
4. IDOL − VDO
0.30
0.25
IDOL [mA]
ICOH [mA]
75 85
50
NE
2. ICOL − VCO
0
IDOH [mA]
25
W
(3) CO/DO pin
1. ICOH − VCO
−1.4
0
Ta [°C]
VDD [V]
−1.6
DE
SI
G
0.38
0.36
N
14. tIOV2 − Ta
0.38
tIOV2 [ms]
tIOV2 [ms]
13. tIOV2 − VDD
7
0.15
0.10
0.05
0
0
1
2
3
VDO [V]
NO
T
RE
VDO [V]
0.20
Seiko Instruments Inc.
23
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
Marking Specifications
8
(1) (2) (3) (4)
(9) (10) (11)
4
(5) (6) (7) (8)
1
(1)
(2) to (4)
(5), (6)
(7) to (11)
Blank
Product code (Refer to Product name vs. Product code)
Blank
Lot number
DE
SI
G
SNT-8A
Top view
N
(1) SNT-8A
5
W
Product Name vs. Product Code
Product Code
(2)
(3)
(4)
S-8242BAB-I8T1x
Q
N
B
S-8242BAC-I8T1x
Q
N
C
S-8242BAD-I8T1x
Q
N
D
S-8242BAE-I8T1x
Q
N
E
S-8242BAF-I8T1x
Q
N
F
S-8242BAG-I8T1x
Q
N
G
S-8242BAH-I8T1x
Q
N
H
S-8242BAI-I8T1x
Q
N
I
S-8242BAM-I8T1x
Q
N
M
S-8242BAN-I8T1x
Q
N
N
S-8242BAO-I8T1x
Q
N
O
S-8242BAQ-I8T1x
Q
N
Q
S-8242BAR-I8T1x
Q
N
R
S-8242BAU-I8T1x
Q
N
U
S-8242BAV-I8T1x
Q
N
V
S-8242BAW-I8T1x
Q
N
W
S-8242BAX-I8T1x
Q
N
X
S-8242BAY-I8T1x
Q
N
Y
S-8242BAZ-I8T1x
Q
N
Z
S-8242BBA-I8T1x
Q
O
A
S-8242BBB-I8T1x
Q
O
B
S-8242BBC-I8T1x
Q
O
C
S-8242BBD-I8T1x
Q
O
D
S-8242BBF-I8T1x
Q
O
F
S-8242BBH-I8T1x
Q
O
H
S-8242BBI-I8T1x
Q
O
I
S-8242BBJ-I8T1x
Q
O
J
S-8242BBK-I8T1x
Q
O
K
S-8242BBQ-I8T1x
Q
O
Q
S-8242BBR-I8T1x
Q
O
R
S-8242BBW-I8T1x
Q
O
W
S-8242BBZ-I8T1U
Q
O
Z
Remark 1. Please contact our sales office for the products with detection voltage value other than those specified
above.
2. x: G or U
3. Please select products of environmental code = U for Sn 100%, halogen-free products.
NO
T
RE
CO
MM
EN
DE
D
FO
R
NE
Product Name
24
Seiko Instruments Inc.
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8242B Series
Rev.2.3_01
1
(1) to (5):
(6) to (8):
(1) (2) (3) (4)
8
(9) to (14):
Product Name : S8242 (Fixed)
Function Code
(refer to Product Name vs. Function Code)
Lot number
DE
SI
G
8-Pin TSSOP
Top view
N
(2) 8-Pin TSSOP
(5) (6) (7) (8)
(9) (10) (11) (12) (13) (14)
5
W
4
Product Name vs. Function Code
Function Code
(6)
(7)
(8)
S-8242BAC-T8T1x
B
A
C
S-8242BAD-T8T1U
B
A
D
S-8242BAH-T8T1x
B
A
H
S-8242BAI-T8T1x
B
A
I
S-8242BAP-T8T1x
B
A
P
S-8242BAR-T8T1x
B
A
R
S-8242BAU-T8T1x
B
A
U
S-8242BAV-T8T1x
B
A
V
S-8242BAW-T8T1x
B
A
W
S-8242BAX-T8T1x
B
A
X
S-8242BBD-T8T1U
B
B
D
S-8242BBE-T8T1x
B
B
E
S-8242BBF-T8T1x
B
B
F
S-8242BBG-T8T1x
B
B
G
S-8242BBL-T8T1y
B
B
L
S-8242BBM-T8T1x
B
B
M
S-8242BBO-T8T1y
B
B
O
S-8242BBP-T8T1y
B
B
P
S-8242BBS-T8T1y
B
B
S
S-8242BBU-T8T1y
B
B
U
S-8242BBV-T8T1y
B
B
V
S-8242BBX-T8T1y
B
B
X
S-8242BCA-T8T1U
B
C
A
S-8242BCB-T8T1U
B
C
B
S-8242BCC-T8T1U
B
C
C
S-8242BCC-T8T1U
B
C
C
S-8242BCD-T8T1U
B
C
D
S-8242BCE-T8T1U
B
C
E
S-8242BCF-T8T1U
B
C
F
S-8242BCG-T8T1U
B
C
G
S-8242BCH-T8T1U
B
C
H
Remark 1. Please contact our sales office for the products with detection voltage value other than those specified
above.
2. x: G or U
3. y: S or U
4. Please select products of environmental code = U for Sn 100%, halogen-free products.
NO
T
RE
CO
MM
EN
DE
D
FO
R
NE
Product Name
Seiko Instruments Inc.
25
1.97±0.03
7
6
5
3
4
W
DE
SI
G
N
8
+0.05
0.5
2
0.08 -0.02
MM
EN
DE
0.2±0.05
D
FO
R
0.48±0.02
NE
1
NO
T
RE
CO
No. PH008-A-P-SD-2.0
TITLE
SNT-8A-A-PKG Dimensions
PH008-A-P-SD-2.0
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
4.0±0.1
2.0±0.05
0.25±0.05
4.0±0.1
0.65±0.05
NE
ø0.5±0.1
MM
EN
5 6 78
DE
4 321
D
FO
R
5°
2.25±0.05
W
DE
SI
G
N
+0.1
ø1.5 -0
CO
Feed direction
NO
T
RE
No. PH008-A-C-SD-1.0
TITLE
SNT-8A-A-Carrier Tape
PH008-A-C-SD-1.0
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
FO
R
NE
W
DE
SI
G
N
12.5max.
9.0±0.3
DE
D
Enlarged drawing in the central part
MM
EN
ø13±0.2
(60°)
CO
(60°)
NO
T
RE
No. PH008-A-R-SD-1.0
TITLE
SNT-8A-A-Reel
No.
PH008-A-R-SD-1.0
SCALE
UNIT
QTY.
mm
Seiko Instruments Inc.
5,000
DE
SI
G
N
0.52
2
NE
W
2.01
R
0.52
FO
0.2 0.3
1.
2.
1
(0.25 mm min. / 0.30 mm typ.)
(1.96 mm ~ 2.06 mm)
D
1.
2.
MM
EN
SNT
DE
3.
4.
0.03 mm
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package (1.96 mm to 2.06mm).
CO
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
※1.
1. 䇋⊼ᛣ⛞Ⲭᓣⱘᆑᑺ(0.25 mm min. / 0.30 mm typ.)DŽ
2. 䇋࣓ᇕ㺙Ё䯈ᠽሩ⛞Ⲭᓣ (1.96 mm ~ 2.06 mm)DŽ
※2.
NO
T
RE
⊼ᛣ1. 䇋࣓ᷥ㛖ൟᇕ㺙ⱘϟ䴶ॄࠋϱ㔥ǃ⛞䫵DŽ
2. ᇕ㺙ϟǃᏗ㒓Ϟⱘ䰏⛞㝰८ᑺ (Ң⛞Ⲭᓣ㸼䴶䍋) 䇋ࠊ0.03 mmҹϟDŽ
3. 㝰ⱘᓔষሎᇌᓔষԡ㕂䇋Ϣ⛞Ⲭᓣᇍ唤DŽ
4. 䆺㒚ݙᆍ䇋খ䯙 "SNTᇕ㺙ⱘᑨ⫼ᣛफ"DŽ
TITLE
No. PH008-A-L-SD-4.0
SNT-8A-A-Land Recommendation
PH008-A-L-SD-4.0
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
+0.3
5
1
4
NE
W
DE
SI
G
8
N
3.00 -0.2
DE
D
FO
R
0.17±0.05
MM
EN
0.2±0.1
CO
0.65
NO
T
RE
No. FT008-A-P-SD-1.1
TITLE
TSSOP8-E-PKG Dimensions
FT008-A-P-SD-1.1
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
4.0±0.1
2.0±0.05
ø1.55±0.05
DE
SI
G
N
0.3±0.05
+0.1
8.0±0.1
NE
W
ø1.55 -0.05
FO
R
(4.4)
+0.4
MM
EN
DE
D
6.6 -0.2
8
1
4
Feed direction
NO
T
RE
CO
5
No. FT008-E-C-SD-1.0
TITLE
TSSOP8-E-Carrier Tape
FT008-E-C-SD-1.0
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
N
DE
SI
G
W
NE
R
FO
D
2±0.5
ø13±0.5
CO
MM
EN
ø21±0.8
17.5±1.0
DE
Enlarged drawing in the central part
13.4±1.0
NO
T
RE
No. FT008-E-R-SD-1.0
TITLE
TSSOP8-E-Reel
No.
FT008-E-R-SD-1.0
SCALE
QTY.
UNIT
mm
Seiko Instruments Inc.
3,000
N
DE
SI
G
W
NE
R
FO
D
2±0.5
ø13±0.5
CO
MM
EN
ø21±0.8
17.5±1.0
DE
Enlarged drawing in the central part
13.4±1.0
NO
T
RE
No. FT008-E-R-S1-1.0
TITLE
TSSOP8-E-Reel
FT008-E-R-S1-1.0
No.
SCALE
UNIT
QTY.
mm
Seiko Instruments Inc.
4,000
N
DE
SI
G
W
NE
R
FO
D
DE
MM
EN
www.sii-ic.com
•
•
•
•
CO
Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
RE
•
The information described herein is subject to change without notice.
When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the appropriate governmental authority.
NO
T
•
•
Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Seiko Instruments Inc. is strictly prohibited.
The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, vehicle equipment,
in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment, without prior
written permission of Seiko Instruments Inc.
The products described herein are not designed to be radiation-proof.
Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.
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