S-8209B Series
www.sii-ic.com
BATTERY PROTECTION IC
WITH CELL-BALANCE FUNCTION
Rev.3.3_00
© Seiko Instruments Inc., 2008-2014
The S-8209B Series is a protection IC for lithium-ion / lithium polymer rechargeable batteries and includes a high-accuracy
voltage detection circuit and a delay circuit.
The S-8209B Series has a transmission function and two types of cell-balance function so that users are also able to configure
a protection circuit with series multi-cell.
Features
• High-accuracy voltage detection circuit
*1
3.55 V to 4.40 V (5 mV step)
Overcharge detection voltage
*1
Overcharge release voltage
3.50 V to 4.40 V*2
Cell-balance detection voltage*1
3.55 V to 4.40 V (5 mV step)*3
*1
Cell-balance release voltage
3.50 V to 4.40 V*4
Overdischarge detection voltage
2.0 V to 3.0 V (10 mV step)
*5
Overdischarge release voltage
2.0 V to 3.4 V
• Settable delay time by external capacitor for output pin
• Control charging, discharging, cell-balance by CTLC, CTLD pins
• Two types of cell-balance function; charge / discharge*6
• Wide range of operation temperature
Ta = −40°C to +85°C
• Low current consumption
7.0 μA max.
• Lead-free, Sn 100%, halogen-free*7
Accuracy ±25 mV
Accuracy ±50 mV
Accuracy ±25 mV
Accuracy ±50 mV
Accuracy ±50 mV
Accuracy ±100 mV
*1. Regarding selection of overcharge detection voltage, overcharge release voltage, cell-balance detection voltage
and cell-balance release voltage, refer to Remark 3 in "3. Product name list" of " Product Name Structure".
*2. Overcharge release voltage = Overcharge detection voltage − Overcharge hysteresis voltage
(Overcharge hysteresis voltage is selectable in 0 V to 0.4 V in 50 mV step.)
*3. Select as to overcharge detection voltage > cell-balance detection voltage.
*4. Cell-balance release voltage = Cell-balance detection voltage − Cell-balance hysteresis voltage
(Cell-balance hysteresis voltage is selectable in 0 V to 0.4 V in 50 mV step.)
*5. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage
(Overdischarge hysteresis voltage is selectable in 0 V to 0.7 V in 100 mV step.)
*6. Also available the product without discharge cell-balance function
*7. Refer to " Product Name Structure" for details.
Applications
• Lithium-ion rechargeable battery pack
• Lithium polymer rechargeable battery pack
Packages
• SNT-8A
• 8-Pin TSSOP
Seiko Instruments Inc.
1
BATTERY PROTECTION IC WITH CELL-BALANCE FUNCTION
S-8209B Series
Rev.3.3_00
Block Diagram
Delay circuit
DO
8.31 MΩ
CDT
CO
VDD
+
−
Overcharge
detection
comparator
CB
+
−
Cell-balance
detection
comparator
CTLD
+
400 nA
−
CTLC
Overdischarge
detection
comparator
400 nA
Remark The diodes in the IC are parasitic diodes.
Figure 1
2
Seiko Instruments Inc.
VSS
BATTERY PROTECTION IC WITH CELL-BALANCE FUNCTION
S-8209B Series
Rev.3.3_00
Product Name Structure
1. Product name
1. 1 8-Pin TSSOP
S-8209B
xx - T8T1
x
Environmental code
U: Lead-free (Sn 100%), halogen-free
S: Lead-free, halogen-free
Package name (abbreviation) and IC packing specifications
T8T1: 8-Pin TSSOP, Tape
*1
Serial code
Sequentially set from AA to ZZ
*1. Refer to the tape drawing.
1. 2 SNT-8A
S-8209B
xx - I8T1
x
Environmental code
U: Lead-free (Sn 100%), halogen-free
G: Lead-free (for details, please contact our sales office)
Package name (abbreviation) and IC packing specifications
I8T1: SNT-8A, Tape
*1
Serial code
Sequentially set from AA to ZZ
*1. Refer to the tape drawing.
2. Packages
Table 1 Package Drawing Codes
Package Name
8-Pin TSSOP
SNT-8A
Environmental code = S
Environmental code = U
Dimension
Tape
Reel
FT008-A-P-SD
FT008-A-P-SD
PH008-A-P-SD
FT008-E-C-SD
FT008-E-C-SD
PH008-A-C-SD
FT008-E-R-SD
FT008-E-R-S1
PH008-A-R-SD
Seiko Instruments Inc.
Land
⎯
PH008-A-L-SD
3
BATTERY PROTECTION IC WITH CELL-BALANCE FUNCTION
S-8209B Series
Rev.3.3_00
3. Product name list
3. 1 8-Pin TSSOP
Table 2
Overcharge
Detection
Voltage*1
(VCU)
Overcharge
Release
Voltage
(VCL)
Cell-balance
Detection
Voltage*1
(VBU)
Cell-balance
Release
Voltage
(VBL)
S-8209BAA-T8T1y
S-8209BAD-T8T1y
S-8209BAG-T8T1y
S-8209BAH-T8T1y
S-8209BAI-T8T1y
S-8209BAJ-T8T1y
S-8209BAK-T8T1y
S-8209BAL-T8T1y
4.100 V
4.150 V
3.800 V
4.250 V
4.250 V
4.150 V
4.215 V
4.300 V
4.000 V
3.950 V
3.650 V
4.150 V
4.150 V
3.950 V
4.215 V
4.100 V
4.050 V
3.900 V
3.700 V
4.200 V
4.100 V
3.900 V
4.190 V
4.225 V
4.000 V
3.900 V
3.700 V
4.200 V
4.050 V
3.900 V
4.190 V
4.225 V
S-8209BAN-T8T1U
4.250 V
4.150 V
4.200 V
4.200 V
Product Name
Overdischarge Overdischarge Discharge
Detection
Release
Cell-balance
Voltage
Voltage
Function
(VDL)
(VDU)
Yes
2.50 V
2.70 V
Yes
2.00 V
2.70 V
No
2.20 V
2.50 V
No
2.50 V
2.80 V
Yes
2.50 V
2.70 V
No
2.30 V
3.00 V
Yes
2.00 V
2.50 V
Yes
2.00 V
2.50 V
2.00 V
2.10 V
No
3. 2 SNT-8A
Table 3
Product Name
S-8209BAA-I8T1x
S-8209BAM-I8T1U
Overcharge
Detection
Voltage*1
(VCU)
Overcharge
Release
Voltage
(VCL)
Cell-balance
Detection
Voltage*1
(VBU)
Cell-balance
Release
Voltage
(VBL)
4.100 V
4.000 V
4.000 V
3.800 V
4.050 V
3.900 V
4.000 V
3.850 V
Overdischarge Overdischarge Discharge
Detection
Release
Cell-balance
Voltage
Voltage
Function
(VDL)
(VDU)
Yes
2.50 V
2.70 V
No
3.00 V
3.40 V
Remark 1. x: G or U
y: S or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
4
Seiko Instruments Inc.
BATTERY PROTECTION IC WITH CELL-BALANCE FUNCTION
S-8209B Series
Rev.3.3_00
3.
Please contact our sales office for the products with detection voltage value other than those specified
above.
Users are able to select the overcharge detection voltage, overcharge release voltage, cell-balance
detection voltage and cell-balance release voltage from the range shown in Figure 2 and Figure 3.
Users are able to select how to combine the overcharge detection voltage (VCU) and the overcharge release
*1
voltage (VCL) from the range A or B shown in Figure 2 .
Similarly, select how to combine the cell-balance detection voltage (VBU) and the cell-balance release
*2
voltage (VBL) from the range of C or D in Figure 3 .
In selecting the combination of VCU and VCL from the range A, select the combination of VBU and VBL from
the range C. Similarly, in selecting the combination of VCU and VCL from the B range, select the combination
*3
of VBU and VBL from the range D .
4.40
4.20
Cell-balance detection voltage (VBU) [V]
Overcharge detection voltage (VCU) [V]
4.40
A
3.90
B
3.55
4.20
C
3.90
D
3.55
3.50 3.55
3.80 3.90 4.00
4.40
Overcharge release voltage (VCL) [V]
Figure 2
3.50 3.55
3.80 3.90 4.00
4.40
Cell-balance release voltage (VBL) [V]
Figure 3
*1. Users are able to select the overcharge hysteresis voltage (VCU − VCL) in 0 V to 0.4 V, in 50 mV step.
*2. Users are able to select the cell-balancce hysteresis voltage (VBU − VBL) in 0 V to 0.4 V, in 50 mV step.
*3. Select as to set VCU > VBU.
Seiko Instruments Inc.
5
BATTERY PROTECTION IC WITH CELL-BALANCE FUNCTION
S-8209B Series
Rev.3.3_00
Pin Configurations
1. 8-Pin TSSOP
Table 4
Top view
1
2
3
4
8
7
6
5
Figure 4
Pin No.
Symbol
Description
1
2
CTLC
CTLD
3
VDD
4
CDT
5
VSS
6
DO
7
CO
8
CB
Pin for charge control
Pin for dischage control
Input pin for positive power supply;
Connection pin for battery's positive voltage
Connection pin to capacitor for overcharge
detection delay, for overdischarge detection delay
Input pin for negative power supply;
Connection pin for batter's negative voltage
Output pin for discharge control
(Nch open drain output)
Output pin for charge control
(Nch open drain output)
Output pin for cell-balance control
(CMOS output)
2. SNT-8A
Table 5
Top view
1
2
3
4
8
7
6
5
Figure 5
6
Pin No.
1
2
Symbol
CTLC
CTLD
3
VDD
4
CDT
5
VSS
6
DO
7
CO
8
CB
Description
Pin for charge control
Pin for dischage control
Input pin for positive power supply;
Connection pin for battery's positive voltage
Connection pin to capacitor for overcharge
detection delay, for overdischarge detection delay
Input pin for negative power supply;
Connection pin for battery's negative voltage
Output pin for discharge control
(Nch open drain output)
Output pin for charge control
(Nch open drain output)
Output pin for cell-balance control
(CMOS output)
Seiko Instruments Inc.
Rev.3.3_00
BATTERY PROTECTION IC WITH CELL-BALANCE FUNCTION
S-8209B Series
Absolute Maximum Ratings
Table 6
Item
Symbol Applied pin
Input voltage between VDD and VSS
VDS
VDD
CB pin output voltage
VCB
CB
CDT pin voltage
VCDT
CDT
DO pin output voltage
VDO
DO
CO pin output voltage
VCO
CO
CTLC pin input voltage
VCTLC
CTLC
CTLD pin input voltage
VCTLD
CTLD
8-Pin TSSOP
Power dissipation
PD
−
SNT-8A
Operating ambient temperature
Topr
−
Storage temperature
Tstg
−
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Board name: JEDEC STANDARD51-7
(Ta = +25°C unless otherwise specified)
Absolute Maximum Rating
Unit
VSS − 0.3 to VSS + 12
V
VSS − 0.3 to VDD + 0.3
V
VSS − 0.3 to VDD + 0.3
V
VDD − 24 to VDD + 0.3
V
VDD − 24 to VDD + 0.3
V
VSS − 0.3 to VSS + 24
V
VSS − 0.3 to VSS + 24
V
*1
700
mW
450*1
mW
−40 to +85
°C
−55 to +125
°C
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
Power Dissipation (PD) [mW]
800
600
8-Pin TSSOP
400
200
0
SNT-8A
0
50
100
150
Ambient Temperature (Ta) [°C]
Figure 6 Power Dissipation of Package (When mounted on board)
Seiko Instruments Inc.
7
BATTERY PROTECTION IC WITH CELL-BALANCE FUNCTION
S-8209B Series
Rev.3.3_00
Electrical Characteristics
Table 7
(Ta = +25°C unless otherwise specified)
Item
Condition
Min.
Typ.
Max.
Unit
Test
Circuit
−
VCU − 0.025
VCU
VCU + 0.025
V
1
VCL ≠ VCU
VCL − 0.05
VCL
VCL + 0.05
V
1
VCL = VCU
VCL − 0.05
VCL
VCL + 0.025
V
1
VBU − 0.025
VBU
VBU + 0.025
V
1
VBL − 0.05
VBL − 0.05
VBL
VBL
VBL + 0.05
VBL + 0.025
V
V
1
1
Symbol
Overcharge detection
voltage
VCU
Overcharge release
voltage
VCL
Cell-balance detection
voltage
VBU
Cell-balance release
voltage
VBL
Overdischarge detection
voltage
VDL
−
VDL − 0.05
VDL
VDL + 0.05
V
1
Overdischarge release
voltage
VDU
−
VDU − 0.10
VDU
VDU + 0.10
V
1
CDT pin resistance*1
RCDT
VDS = 3.5 V，VCDT = 0 V
4.76
8.31
10.9
MΩ
2
CDT pin
*1
detection voltage
VCDET
VDS = 3.5 V
VDS × 0.65
VDS × 0.70
VDS × 0.75
V
3
−
VBL ≠ VBU
VBL = VBU
Output voltage
Operating voltage
1.5
−
8.0
V
−
VDSOP
of CO, DO, CB fixed
between VDD and VSS
CTLC pin H voltage
VCTLCH VDS = 3.5 V
VDS × 0.55
−
VDS × 0.90
V
4
CTLD pin H voltage
VCTLDH VDS = 3.5 V
VDS × 0.55
−
VDS × 0.90
V
4
CTLC pin L voltage
VCTLCL VDS = 3.5 V
VDS × 0.10
−
VDS × 0.45
V
4
CTLD pin L voltage
VCTLDL VDS = 3.5 V
VDS × 0.10
−
VDS × 0.45
V
4
Current consumption
IOPE
VDS = 3.5 V
−
3.5
7.0
μA
5
*2
during operation
*2
Sink current CTLC
VDS = 3.5 V, VCTLC = 3.5 V
320
400
480
nA
6
ICTLCL
Sink current CTLD*2
VDS = 3.5 V, VCTLD = 3.5 V
320
400
480
nA
6
ICTLDL
Source current CB
ICBH
VCB = 4.0 V, VDS = 4.5 V
30
−
−
μA
7
Sink current CB
ICBL
VCB = 0.5 V, VDS = 3.5 V
30
−
−
μA
7
Source current CO
ICOH
VCO = 3.0 V, VDS = 3.5 V
30
−
−
μA
7
Leakage current CO
ICOL
VCO = 24 V, VDS = 4.5 V
−
−
0.1
μA
8
Source current DO
IDOH
VDO = 3.0 V, VDS = 3.5 V
30
−
−
μA
7
Leakage current DO
IDOL
VDO = 24 V, VDS = 1.8 V
−
−
0.1
μA
8
*1. In the S-8209B Series, users are able to set delay time for the output pins. By using the following formula, delay time is
calculated with the value of CDT pin’s resistance in the IC (RCDT) and the value of capacitor set externally at the CDT pin
(CCDT).
tD [s] = −ln (1−VCDET / VDS) × CCDT [μF] × RCDT [MΩ]
= −ln (1−0.7 (typ.) ) × CCDT [μF] × 8.31 MΩ (typ.)
= 10.0 MΩ (typ.) × CCDT [μF]
In case of the capacitance of CDT pin CCDT = 0.01 μF, the output pin delay time tD is calculated by using the above
formula and as follows.
tD [s] = 10.0 MΩ (typ.) × 0.01 μF = 0.1 s (typ.)
Test RCDT and the CDT pin detection voltage (VCDET) by test circuits shown in this datasheet after applying the power
supply while pulling-up the CTLC, CTLD pins to the level of VDD pin outside the IC.
*2. In case of using CTLC, CTLD pins pulled-up to the level of VDD pin externally, the current flows from the VSS pin (ISS) is
calculated by the following formula.
ISS = IOPE + ICTLCL + ICTLDL
8
Seiko Instruments Inc.
BATTERY PROTECTION IC WITH CELL-BALANCE FUNCTION
S-8209B Series
Rev.3.3_00
Test Circuits
CTLC
CTLC
CB
CTLD
CO
S-8209B Series
DO
VDD
CTLD
CO
S-8209B Series
DO
VDD
CDT
CB
100 100
kΩ kΩ
VSS
V
V
CDT
V
VSS
A
COM
COM
Figure 7 Test circuit 1
CTLC
Figure 8 Test circuit 2
CTLC
CB
CTLD
CO
S-8209B Series
DO
VDD
CTLD
CO
S-8209B Series
DO
VDD
CDT
CB
100
kΩ
VSS
CDT
100 100
kΩ kΩ
VSS
V
V
V
COM
COM
Figure 9 Test circuit 3
CTLC
A
Figure 10 Test circuit 4
CB
A
CTLC
CTLD
CO
S-8209B Series
DO
VDD
A
CTLD
CO
S-8209B Series
DO
VDD
CDT
VSS
CDT
COM
CB
VSS
COM
Figure 11 Test circuit 5
Figure 12 Test circuit 6
Seiko Instruments Inc.
9
BATTERY PROTECTION IC WITH CELL-BALANCE FUNCTION
S-8209B Series
Rev.3.3_00
A
CTLC
CB
CTLC
CTLD
CO
S-8209B Series
DO
VDD
CDT
VSS
CTLD
CO
S-8209B Series
DO
VDD
A
A
A
CDT
COM
VSS
COM
Figure 13 Test circuit 7
10
CB
Figure 14 Test circuit 8
Seiko Instruments Inc.
A
BATTERY PROTECTION IC WITH CELL-BALANCE FUNCTION
S-8209B Series
Rev.3.3_00
Operation
Figure 15 shows the operation transition of the S-8209B Series
[Overcharge status]
Charge
CO = High-Z
DO = High-Z
*1
CB = H
VDS ≥ VCU
VCTLD ≤ VCTLDL
VDS ≤ VCL
CO = H
DO = High-Z
*1
CB = H
VDS ≥ VBU
VCTLD ≥ VCTLDH
CO = High-Z
DO = H
*1
CB = H
VDS ≥ VCU
VCTLD ≥ VCTLDH
VCTLD ≤ VCTLDL
VCTLC ≤ VCTLCL
CO = H
DO = H
*1
CB = H
CO = High-Z
DO = H
*1
CB = H
VDS ≤ VCL
VDS ≤ VCL
VDS ≥ VBU
VDS ≤ VBL
VCTLC ≥ VCTLCH
VCTLC ≥ VCTLCH
VCTLC ≤ VCTLCL
CO = High-Z
DO = H
*1
CB = H
VDS ≤ VBL
VDS ≤ VBL
[Normal status]
CO = H
DO = High-Z
*2
CB = H
VCTLD ≥ VCTLDH
VCTLD ≤ VCTLDL
VCTLC ≥ VCTLCH
VCTLC ≤ VCTLCL
VDS ≥ VDU
VDS ≥ VDU
Discharge
CO = H
DO = H
CB = L
CO = High-Z
DO = H
CB = L
VDS ≤ VDL
VDS ≤ VDL
[Overdischarge status]
CO = H
DO = High-Z
CB = L
VCTLD ≥ VCTLDH
VCTLD ≤ VCTLDL
CO = H
DO = High-Z
CB = L
VCTLC ≥ VCTLCH
VCTLC ≤ VCTLCL
CO = High-Z
DO = High-Z
CB = L
VDS < 1.5V
Indefinite status
*1.
*2.
Operation of charge cell-balance function
Operation of discharge cell-balance function
CO = Indefinite
DO = Indefinite
CB = Indefinite
Figure 15 Operation Transition
Seiko Instruments Inc.
11
BATTERY PROTECTION IC WITH CELL-BALANCE FUNCTION
S-8209B Series
Rev.3.3_00
1. Normal status
In the S-8209B Series, both of CO and DO pin get the VDD level; the voltage between VDD and VSS (VDS) is more
than the overdischarge detection voltage (VDL), and is less than the overcharge detection voltage (VCU) and
respectively, the CTLC pin input voltage (VCTLC) > the CTLC pin voltage "L" (VCTLCL), the CTLD pin input voltage
(VCTLD) > the CTLD pin voltage "L" (VCTLDL). This is the normal status.
2. Overcharge status
In the S-8209B Series, the CO pin is in high impedance; when VDS gets VCU or more, or VCTLC gets VCTLCL or less.
This is the overcharge status.
If VDS gets the overcharge release voltage (VCL) or less, and VCTLC gets the CTLC pin voltage "H" (VCTLCH) or more,
the S-8209B Series releases the overcharge status to return to the normal status.
3. Overdischarge status
In the S-8209B Series, the DO pin is in high impedance; when VDS gets VDL or less, or VCTLD gets VCTLDL or less. This
is the overdischarge status.
If VDS gets the overdischarge release voltage (VDU) or more, and VCTLD gets the CTLD pin voltage "H" (VCTLDH) or
more, the S-8209B Series releases the overdischarge status to return to the normal status.
4. Cell-balance function
In the S-8209B Series, the CB pin gets the level of VDD pin; when VDS gets the cell-balance detection voltage (VBU)
or more. This is the charge cell-balance function.
If VDS gets the cell-balance release voltage (VBL) or less again, the S-8209B Series sets the CB pin the level of VSS
pin.
In addition, the CB pin gets the level of VDD pin; when VDS is more than VDL, and VCTLD is VCTLDL or less. This is the
discharge cell-balance function.
If VCTLD gets VCTLDH or more, or VDS is VDL or less again, the S-8209B Series sets the CB pin the level of VSS pin.
5. Delay circuit
In the S-8209B Series, users are able to set delay time which is from detection of changes in VDS, VCTLC, VCTLD to
output to the CO, DO, CB pin.
For example in the detection of overcharge status, when VDS exceeds VCU, or VCTLC gets VCTLCH or less, charging to
CCDT starts via RCDT. If the voltage between CDT and VSS (VCDT) reaches the CDT pin detection voltage (VCDET), the
CO pin is in high impedance. The output pin delay time tD is calculated by the following formula.
tD [s] = 10.0 MΩ (typ.) × CCDT [μF]
The electric charge in CCDT starts to be discharged when the delay time has finished.
The delay time that users have set for the CO pin, as seen above, is settable for each output pin DO, CB.
12
Seiko Instruments Inc.
BATTERY PROTECTION IC WITH CELL-BALANCE FUNCTION
S-8209B Series
Rev.3.3_00
Battery Protection IC Connection Examples
Regarding the operation of protection circuit with the S-8209B Series for series-connected batteries, refer to the
application note "S-8209B Series Usage Guidelines".
1. Example of Protection Circuit with the S-8209B Series (Without Discharge Cell-balance Function)
for Series Multi-Cells
Figure 16 shows the example of protection circuit with the S-8209B Series (without discharge cell-balance function)
for series multi-cells.
EB+
1 MΩ
CFET
DFET
1 kΩ
1 MΩ
1 kΩ
1 kΩ
CO1
VDD1
DO1
CDT1
0.1 μF
S-8209B
(1)
CB1
1 kΩ
BAT1
CTLC1
CTLD1
1 kΩ
1 kΩ
VSS1
470 Ω
CO2
VDD2
DO2
CDT2
0.1 μF
S-8209B
(2)
CB2
BAT2
CTLC2
CTLD2
VSS2
470 Ω
CO3
VDD3
DO3
CDT3
0.01 μF 0.1 μF
S-8209B
(3)
CB3
510 kΩ
CTLD3
EB−
1 MΩ
BAT3
CTLC3
510 kΩ
VSS3
470 Ω
1 MΩ
Figure 16
Caution 1. The above constants may be changed without notice.
2. The example of connection shown above and the constant do not guarantee proper operation.
Perform thorough evaluation using the actual application to set the constant.
Seiko Instruments Inc.
13
BATTERY PROTECTION IC WITH CELL-BALANCE FUNCTION
S-8209B Series
Rev.3.3_00
2. Example of Protection Circuit with the S-8209B Series (With Discharge Cell-balance Function) for
Series Multi-Cells
Figure 17 shows the example of protection circuit with the S-8209B Series (with discharge cell-balance function) for
series multi-cells.
EB+
1 MΩ
1 MΩ
CFET
DFET
1 kΩ
1 MΩ
4.7 MΩ
4.7 MΩ
1 kΩ
1 MΩ
1 kΩ
CO1
VDD1
DO1
CDT1
0.1 μF
S-8209B
(1)
CB1
1 kΩ
BAT1
CTLC1
CTLD1
1 kΩ
1 kΩ
VSS1
470 Ω
CO2
VDD2
DO2
CDT2
0.1 μF
S-8209B
(2)
CB2
BAT2
CTLC2
CTLD2
VSS2
470 Ω
CO3
VDD3
DO3
CDT3
0.01 μF
0.1 μF
S-8209B
(3)
CB3
510 kΩ
CTLD3
EB−
1 MΩ
BAT3
CTLC3
510 kΩ
VSS3
470 Ω
1 MΩ
Figure 17
Caution 1. The above constants may be changed without notice.
2. The example of connection shown above and the constant do not guarantee proper operation.
Perform thorough evaluation using the actual application to set the constant.
14
Seiko Instruments Inc.
Rev.3.3_00
BATTERY PROTECTION IC WITH CELL-BALANCE FUNCTION
S-8209B Series
Precautions
• The application conditions for the input voltage, output voltage, and load current should not exceed the package power
dissipation.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• SII claims no responsibility for any and all disputes arising out of or in connection with any infringement by products
including this IC of patents owned by a third party.
Seiko Instruments Inc.
15
BATTERY PROTECTION IC WITH CELL-BALANCE FUNCTION
S-8209B Series
Rev.3.3_00
Characteristics (Typical Data)
1. Current consumption
1. 1 IOPE vs. Ta
1. 2 IOPE vs. VDS
5
IOPE [A]
IOPE [A]
4
3
2
1
0
40 25
0
25
Ta [C]
50
75 85
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
VDS [V]
6
7
8
2. Overcharge detection / release voltages, Cell-balance detection / release voltages, Overdischarge
detection / release voltages
4.12
4.04
4.11
4.02
4.10
4.00
VCL [V]
2. 2 VCL vs. Ta
VCU [V]
2. 1 VCU vs. Ta
4.09
4.08
4.07
40 25
3.96
0
25
Ta [C]
50
3.94
40 25
75 85
4.07
4.04
4.06
4.02
4.05
4.00
VBL [V]
2. 4 VBL vs. Ta
VBU [V]
2. 3 VBU vs. Ta
4.04
4.03
4.02
40 25
0
25
Ta [C]
50
3.94
40 25
75 85
2.82
2.56
2.78
2.54
2.74
2.52
VDL [V]
2. 6 VDL vs. Ta
VDU [V]
25
Ta [C]
50
75 85
0
25
Ta [C]
50
75 85
0
25
Ta [C]
50
75 85
3.98
2. 5 VDU vs. Ta
2.70
2.62
40 25
0
3.96
2.66
16
3.98
2.50
2.48
0
25
Ta [C]
50
75 85
2.46
40 25
Seiko Instruments Inc.
BATTERY PROTECTION IC WITH CELL-BALANCE FUNCTION
S-8209B Series
Rev.3.3_00
3. CO / DO / CB pin current
3. 2 IDOH vs. VDO (VDS = 3.5 V)
2000
1750
1500
1250
1000
750
500
250
0
IDOH [A]
ICOH [A]
3. 1 ICOH vs. VCO (VDS = 3.5 V)
0
0.5
1.0
1.5 2.0
VCO [V]
2.5
3.0
0
3.5
3. 3 ICBH vs. VCB (VDS = 4.5 V)
0.5
1.0
1.5 2.0
VDO [V]
2.5
3.0
3.5
2.5
3.0
3.5
3. 4 ICBL vs. VCB (VDS = 3.5 V)
2000
1750
1500
1250
1000
750
500
250
0
ICBL [A]
ICBH [A]
2000
1750
1500
1250
1000
750
500
250
0
2000
1750
1500
1250
1000
750
500
250
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VCB [V]
0
0.5
1.0
1.5 2.0
VCB [V]
4. CTLC / CTLD pin current
4. 2 ICTLDL vs. Ta (VDS = 3.5 V)
600
600
500
500
ICTLDL [nA]
ICTLCL [nA]
4. 1 ICTLCL vs. Ta (VDS = 3.5 V)
400
300
200
100
0
40 25
400
300
200
100
0
25
Ta [C]
50
0
40 25
75 85
0
25
Ta [C]
50
75 85
0
25
Ta [C]
50
75 85
5. CDT pin resistance / CDT pin detection voltage
5. 1 RCDT vs. Ta
5. 2 VCDET / VDS vs. Ta
12.0
VCDET / VDS
RCDT [M]
10.0
8.0
6.0
4.0
2.0
0
40 25
0
25
Ta [C]
50
75 85
0.720
0.715
0.710
0.705
0.700
0.695
0.690
0.685
0.680
40 25
Seiko Instruments Inc.
17
+0.3
3.00 -0.2
8
5
1
4
0.17±0.05
0.2±0.1
0.65
No. FT008-A-P-SD-1.1
TITLE
TSSOP8-E-PKG Dimensions
FT008-A-P-SD-1.1
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
4.0±0.1
2.0±0.05
ø1.55±0.05
0.3±0.05
+0.1
8.0±0.1
ø1.55 -0.05
(4.4)
+0.4
6.6 -0.2
1
8
4
5
Feed direction
No. FT008-E-C-SD-1.0
TITLE
TSSOP8-E-Carrier Tape
FT008-E-C-SD-1.0
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
13.4±1.0
17.5±1.0
Enlarged drawing in the central part
ø21±0.8
2±0.5
ø13±0.5
No. FT008-E-R-SD-1.0
TITLE
TSSOP8-E-Reel
No.
FT008-E-R-SD-1.0
SCALE
QTY.
UNIT
mm
Seiko Instruments Inc.
3,000
13.4±1.0
17.5±1.0
Enlarged drawing in the central part
ø21±0.8
2±0.5
ø13±0.5
No. FT008-E-R-S1-1.0
TITLE
TSSOP8-E-Reel
FT008-E-R-S1-1.0
No.
SCALE
UNIT
QTY.
mm
Seiko Instruments Inc.
4,000
1.97±0.03
8
7
6
5
3
4
+0.05
1
0.5
2
0.08 -0.02
0.48±0.02
0.2±0.05
No. PH008-A-P-SD-2.0
TITLE
SNT-8A-A-PKG Dimensions
PH008-A-P-SD-2.0
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
+0.1
ø1.5 -0
5°
2.25±0.05
4.0±0.1
2.0±0.05
ø0.5±0.1
0.25±0.05
0.65±0.05
4.0±0.1
4 321
5 6 78
Feed direction
No. PH008-A-C-SD-1.0
TITLE
SNT-8A-A-Carrier Tape
PH008-A-C-SD-1.0
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. PH008-A-R-SD-1.0
TITLE
SNT-8A-A-Reel
No.
PH008-A-R-SD-1.0
SCALE
UNIT
QTY.
mm
Seiko Instruments Inc.
5,000
0.52
2.01
2
0.52
0.2 0.3
1.
2.
1
(0.25 mm min. / 0.30 mm typ.)
(1.96 mm ~ 2.06 mm)
1.
2.
3.
4.
0.03 mm
SNT
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package (1.96 mm to 2.06mm).
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
※1.
1. 䇋⊼ᛣ⛞Ⲭᓣⱘᆑᑺ(0.25 mm min. / 0.30 mm typ.)DŽ
2. 䇋࣓ᇕ㺙Ё䯈ᠽሩ⛞Ⲭᓣ (1.96 mm ~ 2.06 mm)DŽ
※2.
⊼ᛣ1. 䇋࣓ᷥ㛖ൟᇕ㺙ⱘϟ䴶ॄࠋϱ㔥ǃ⛞䫵DŽ
2. ᇕ㺙ϟǃᏗ㒓Ϟⱘ䰏⛞㝰८ᑺ (Ң⛞Ⲭᓣ㸼䴶䍋) 䇋ࠊ0.03 mmҹϟDŽ
3. 㝰ⱘᓔষሎᇌᓔষԡ㕂䇋Ϣ⛞Ⲭᓣᇍ唤DŽ
4. 䆺㒚ݙᆍ䇋খ䯙 "SNTᇕ㺙ⱘᑨ⫼ᣛफ"DŽ
TITLE
No. PH008-A-L-SD-4.0
SNT-8A-A-Land Recommendation
PH008-A-L-SD-4.0
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
www.sii-ic.com
•
•
The information described herein is subject to change without notice.
•
When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the appropriate governmental authority.
•
Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Seiko Instruments Inc. is strictly prohibited.
•
The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, vehicle equipment,
in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment, without prior
written permission of Seiko Instruments Inc.
•
•
The products described herein are not designed to be radiation-proof.
Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.
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