S-8250B Series
www.ablic.com
www.ablicinc.com
BATTERY PROTECTION IC FOR 1-CELL PACK
© ABLIC Inc., 2013-2016
Rev.1.1_03
The S-8250B Series is a protection IC for 1-cell lithium-ion / lithium polymer rechargeable batteries and includes
high-accuracy voltage detection circuits and delay circuits.
The S-8250B Series is suitable for protecting 1-cell lithium-ion / lithium polymer rechargeable battery packs from overcharge,
overdischarge and overcurrent. By adjusting power supply voltage dependency of discharge overcurrent detection voltage in
accordance with ON resistance of the charge-discharge control FET, the S-8250B Series realizes high-accuracy discharge
overcurrent detection.
Features
High-accuracy discharge overcurrent detection circuit
Discharge overcurrent detection voltage 0.050 V to 0.150 V (1 mV step)
Accuracy 10 mV (Ta = 25°C)
(Power supply voltage dependency can be set in accordance with ON resistance of the charge-discharge control FET.)
High-accuracy voltage detection circuit
Overcharge detection voltage
4.100 V to 4.600 V (5 mV step)
Accuracy 20 mV (Ta = 25°C)
Accuracy 25 mV (Ta = 10°C to 60°C)
Overcharge release voltage
3.700 V to 4.600 V*1
Accuracy 30 mV
Overdischarge detection voltage
2.000 V to 2.800 V (10 mV step)
Accuracy 50 mV
*2
Accuracy 100 mV
Overdischarge release voltage
2.000 V to 3.000 V
Load short-circuiting detection voltage
0.250 V to 0.500 V (50 mV step)
Accuracy 50 mV
Charge overcurrent detection voltage
0.200 V to 0.025 V (25 mV step)
Accuracy 15 mV
Detection delay times are generated only by an internal circuit (External capacitors are unnecessary).
0 V battery charge function is selectable:
Available, unavailable
Power-down function is selectable:
Available, unavailable
Release condition of discharge overcurrent status is selectable:
Load disconnection, charger connection
High-withstand voltage:
VM pin and CO pin: Absolute maximum rating 28 V
Wide operation temperature range:
Ta = 40°C to 85°C
Low current consumption
During operation:
2.0 A typ., 4.0 A max. (Ta = 25°C)
During power-down:
50 nA max. (Ta = 25°C)
Lead-free (Sn 100%), halogen-free
*1. Overcharge release voltage = Overcharge detection voltage Overcharge hysteresis voltage
(Overcharge hysteresis voltage can be selected from a range of 0 V to 0.4 V in 50 mV step.)
*2. Overdischarge release voltage = Overdischarge detection voltage Overdischarge hysteresis voltage
(Overdischarge hysteresis voltage can be selected from a range of 0 V to 0.7 V in 100 mV step.)
Applications
Lithium-ion rechargeable battery pack
Lithium polymer rechargeable battery pack
Package
SNT-6A
1
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
Block Diagram
VDD
Overdischarge
detection comparator
DO
Overcharge
detection comparator
VSS
Discharge overcurrent
detection comparator
Control logic
Delay circuit
Load short-circuiting
detection comparator
VM
Charge overcurrent
detection comparator
Remark All the diodes shown in the figure are parasitic diodes.
Figure 1
2
Oscillator
CO
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
Product Name Structure
1. Product name
S-8250B
xx
-
I6T1
U
Environmental code
U:
Lead-free (Sn 100%), halogen-free
Package abbreviation and IC packing specifications
I6T1: SNT-6A, Tape
*1
*2
Serial code
Sequentially set from AA to ZZ
*1. Refer to the tape drawing.
*2. Refer to "3. Product name list".
2. Package
Table 1 Package Drawing Codes
Package Name
SNT-6A
Dimension
PG006-A-P-SD
Tape
PG006-A-C-SD
Reel
PG006-A-R-SD
Land
PG006-A-L-SD
3
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
3. Product name list
3. 1 SNT-6A
Table 2 (1 / 2)
Overcharge
Detection
Voltage
[VCU]
Overcharge
Release
Voltage
[VCL]
Overdischarge
Detection
Voltage
[VDL]
Overdischarge
Release
Voltage
[VDU]
Delay Time
Combination*1
Function
Combination*2
S-8250BAB-I6T1U
S-8250BAC-I6T1U
S-8250BAF-I6T1U
S-8250BAK-I6T1U
S-8250BAL-I6T1U
S-8250BAM-I6T1U
S-8250BAN-I6T1U
S-8250BAS-I6T1U
4.425 V
4.415 V
4.425 V
4.425 V
4.425 V
4.475 V
4.470 V
4.280 V
4.225 V
4.215 V
4.225 V
4.225 V
4.225 V
4.275 V
4.220 V
4.280 V
2.500 V
2.500 V
2.300 V
2.300 V
2.500 V
2.500 V
2.300 V
2.800 V
2.900 V
2.900 V
2.500 V
2.500 V
2.800 V
2.900 V
2.300 V
2.800 V
(1)
(1)
(1)
(1)
(2)
(3)
(4)
(5)
(2)
(2)
(1)
(1)
(1)
(2)
(3)
(4)
S-8250BAV-I6T1U
4.330 V
4.130 V
2.000 V
2.000 V
(1)
(2)
Product Name
Table 2 (2 / 2)
Discharge Overcurrent Detection Voltage
[VDIOV]
VDD = 3.0 V
VDD = 3.4 V
VDD = 4.0 V
S-8250BAB-I6T1U
0.134 V
0.125 V
0.115 V
S-8250BAC-I6T1U
0.060 V
0.056 V
0.050 V
S-8250BAF-I6T1U
0.072 V
0.069 V
0.066 V
S-8250BAK-I6T1U
0.104 V
0.097 V
0.089 V
S-8250BAL-I6T1U
0.061 V
0.060 V
0.057 V
S-8250BAM-I6T1U
0.071 V
0.068 V
0.063 V
S-8250BAN-I6T1U
0.113 V
0.108 V
0.100 V
S-8250BAS-I6T1U
0.054 V
0.052 V
0.050 V
S-8250BAV-I6T1U
0.110 V
0.100 V
0.091 V
*1. Refer to Table 3 about the details of the delay time combinations.
*2. Refer to Table 5 about the details of the function combinations.
Product Name
Load Short-circuiting
Detection Voltage
[VSHORT]
Charge Overcurrent
Detection Voltage
[VCIOV]
0.300 V
0.700 V
0.225 V
0.225 V
0.250 V
0.200 V
0.500 V
0.500 V
0.300 V
0.100 V
0.050 V
0.040 V
0.055 V
0.055 V
0.050 V
0.075 V
0.100 V
0.050 V
Remark Please contact our sales office for the products with detection voltage value other than those specified above.
4
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
Table 3
Delay Time
Combination
Overcharge
Detection
Delay Time
[tCU]
Overdischarge
Detection
Delay Time
[tDL]
Discharge
Overcurrent
Detection
Delay Time
[tDIOV]
Load
Short-circuiting
Detection
Delay Time
[tSHORT]
Charge
Overcurrent
Detection
Delay Time
[tCIOV]
(1)
(2)
(3)
(4)
(5)
1.0 s
1.0 s
1.0 s
1.0 s
1.0 s
32 ms
64 ms
64 ms
32 ms
64 ms
8 ms
8 ms
16 ms
16 ms
16 ms
280 s
280 s
280 s
280 s
280 s
8 ms
8 ms
8 ms
16 ms
16 ms
Remark The delay times can be changed within the range listed in Table 4. For details, please contact our sales office.
Table 4
Delay Time
Symbol
Overcharge detection delay time
Overdischarge detection delay time
Discharge overcurrent detection delay time
Load short-circuiting detection delay time
Charge overcurrent detection delay time
tCU
tDL
tDIOV
tSHORT
tCIOV
Selection Range
256 ms
32 ms
8 ms
280 s*1
8 ms
512 ms
64 ms
16 ms*1
530 s
16 ms*1
Remark
1.0 s*1
128 ms*1
32 ms
32 ms
Select a value from the left.
Select a value from the left.
Select a value from the left.
Select a value from the left.
Select a value from the left.
*1. This value is the delay time of the standard products.
Table 5
Function Combination
(1)
(2)
(3)
(4)
0 V Battery Charge
Function*1
Available
Unavailable
Unavailable
Available
Power-down Function*2
Unavailable
Unavailable
Available
Available
Release Condition
of Discharge Overcurrent Status*3
Load disconnection
Load disconnection
Load disconnection
Load disconnection
*1. 0 V battery charge function "available" / "unavailable" is selectable.
*2. Power-down function "available" / "unavailable" is selectable.
*3. Release condition of discharge overcurrent status "load disconnection" / "charger connection" is selectable.
Remark Please contact our sales office for the products with function combinations other than those specified above.
5
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
Pin Configuration
1. SNT-6A
Table 6
Top view
1
2
3
6
5
4
Figure 2
Pin No.
1
2
CO
3
DO
4
5
VSS
VDD
6
VM
*1. NC pin is electrically open.
NC pin can be connected to VDD pin or VSS pin.
6
Symbol
NC*1
Description
No connection
Connection pin of charge control FET gate
(CMOS output)
Connection pin of discharge control FET gate
(CMOS output)
Input pin for negative power supply
Input pin for positive power supply
Voltage detection pin between VM pin and VSS pin
(Overcurrent / charger detection pin)
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
Absolute Maximum Ratings
Table 7
(Ta = 25°C unless otherwise specified)
Item
Symbol
Applied pin
Absolute Maximum Rating
Unit
Input voltage between VDD pin and VSS pin
VDS
VDD
VSS 0.3 to VSS 12
V
VM pin input voltage
VVM
VM
VDD 28 to VDD 0.3
V
DO pin output voltage
VDO
DO
VSS 0.3 to VDD 0.3
V
CO pin output voltage
Power dissipation
Operation ambient temperature
VCO
PD
Topr
CO
VVM 0.3 to VDD 0.3
400*1
40 to 85
V
mW
C
Storage temperature
Tstg
55 to 125
C
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm 76.2 mm t1.6 mm
(2) Board name: JEDEC STANDARD51-7
The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
700
Power Dissipation (PD) [mW]
Caution
600
500
400
300
200
100
0
0
50
100
150
Ambient Temperature (Ta) [C]
Figure 3 Power Dissipation of Package (When Mounted on Board)
7
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
Electrical Characteristics
1. Ta = 25°C
Table 8
Item
Symbol
Condition
Min.
(Ta = 25°C unless otherwise specified)
Test
Typ.
Max.
Unit
Circuit
Detection Voltage
*1
Ta = 10°C to 60°C
VCL VCU
VCL = VCU
VDL VDU
VDL = VDU
VDD = 3.0 V
VDD = 3.4 V
VDD = 4.0 V
Overcharge detection voltage
VCU
Overcharge release voltage
VCL
Overdischarge detection voltage
VDL
Overdischarge release voltage
VDU
Discharge overcurrent detection voltage
VDIOV
Load short-circuiting detection voltage
VSHORT
Discharge overcurrent release voltage
VRIOV
Charge overcurrent detection voltage
0 V Battery Charge Function
VCIOV
0 V battery charge starting charger voltage V0CHA
0 V battery charge inhibition battery voltage V0INH
0 V battery charge
function "available"
0 V battery charge
function "unavailable"
VCU 0.020
VCU 0.025
VCL 0.030
VCL 0.025
VDL 0.050
VDU 0.100
VDU 0.050
VDIOV 0.010
VDIOV 0.010
VDIOV 0.010
VSHORT 0.050
VCU
VCU
VCL
VCL
VDL
VDU
VDU
VDIOV
VDIOV
VDIOV
VSHORT
VDD
VDD 1.2
0.8
VCIOV 0.015 VCIOV
VCU 0.020
VCU 0.025
VCL 0.030
VCL 0.020
VDL 0.050
VDU 0.100
VDU 0.050
VDIOV 0.010
VDIOV 0.010
VDIOV 0.010
VSHORT 0.050
V
V
V
V
V
V
V
V
V
V
V
1
1
1
1
2
2
2
2
2
2
2
VDD 0.5
V
2
VCIOV 0.015
V
2
0.00
0.70
1.00
V
2
0.90
1.25
1.60
V
2
Internal Resistance
Resistance between VM pin and VDD pin RVMD
500
1000
2000
k
3
Resistance between VM pin and VSS pin RVMS
10
20
40
k
3
Input Voltage
Operation voltage between VDD pin and
VDSOP1
1.5
6.5
V
VSS pin
Operation voltage between VDD pin and
VDSOP2
1.5
28
V
VM pin
Input Current
Current consumption during operation
IOPE
2.0
4.0
A
3
Current consumption during power-down
IPDN
50
nA
3
Current consumption during overdischarge IOPED
1.0
A
3
Output Resistance
CO pin resistance "H"
RCOH
5
10
20
k
4
CO pin resistance "L"
RCOL
5
10
20
k
4
DO pin resistance "H"
RDOH
5
10
20
k
4
DO pin resistance "L"
RDOL
5
10
20
k
4
Delay Time
Overcharge detection delay time
tCU
tCU 0.8
tCU
tCU 1.2
5
Overdischarge detection delay time
tDL
tDL 0.8
tDL
tDL 1.2
5
Discharge overcurrent detection delay time tDIOV
tDIOV 0.8
tDIOV
tDIOV 1.2
5
Load short-circuiting detection delay time
tSHORT
tSHORT 0.7 tSHORT tSHORT 1.3
5
Charge overcurrent detection delay time
tCIOV
tCIOV 0.8
tCIOV
tCIOV 1.2
5
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by
design, not tested in production.
8
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
2. Ta = 40°C to 85°C*1
Table 9
Item
Detection Voltage
Overcharge detection voltage
Symbol
Condition
Min.
VCU 0.045
VCL 0.070
VCL 0.050
VDL 0.090
VDU 0.140
VDU 0.090
VCU
VCL VCU
VCL = VCU
Overcharge release voltage
VCL
Overdischarge detection voltage
VDL
Overdischarge release voltage
VDU
Discharge overcurrent detection voltage*2
VDIOV
Load short-circuiting detection voltage
VSHORT
Discharge overcurrent release voltage
VRIOV
Charge overcurrent detection voltage
0 V Battery Charge Function
VCIOV
0 V battery charge starting charger voltage V0CHA
0 V battery charge inhibition battery voltage V0INH
(Ta = 40°C to 85°C*1 unless otherwise specified)
VDL VDU
VDL = VDU
VDD = 3.0 V
VDD = 3.4 V
VDD = 4.0 V
0 V battery charge
function "available"
0 V battery charge
function "unavailable"
Typ.
Max.
VCU
VCU 0.030
VCL
VCL 0.040
VCL
VCL 0.030
VDL
VDL 0.060
VDU
VDU 0.110
VDU
VDU 0.060
VDIOV
VDIOV
VDIOV
VSHORT 0.050 VSHORT VSHORT 0.050
VDD
VDD 0.3
VDD 1.4
0.8
VCIOV 0.015 VCIOV VCIOV 0.015
Unit
Test
Circuit
V
V
V
V
V
V
V
V
V
V
1
1
1
2
2
2
2
2
2
2
V
2
V
2
0.00
0.70
1.50
V
2
0.70
1.25
1.80
V
2
Internal Resistance
Resistance between VM pin and VDD pin RVMD
250
1000
3000
k
3
Resistance between VM pin and VSS pin RVMS
7.2
20
44
k
3
Input Voltage
Operation voltage between VDD pin and
VDSOP1
1.5
6.5
V
VSS pin
Operation voltage between VDD pin and
VDSOP2
1.5
28
V
VM pin
Input Current
Current consumption during operation
IOPE
2.0
4.5
A
3
Current consumption during power-down
IPDN
100
nA
3
Current consumption during overdischarge IOPED
2.0
A
3
Output Resistance
CO pin resistance "H"
RCOH
2.5
10
30
k
4
CO pin resistance "L"
RCOL
2.5
10
30
k
4
DO pin resistance "H"
RDOH
2.5
10
30
k
4
DO pin resistance "L"
RDOL
2.5
10
30
k
4
Delay Time
Overcharge detection delay time
tCU
tCU 0.6
tCU
tCU 1.6
5
Overdischarge detection delay time
tDL
tDL 0.6
tDL
tDL 1.6
5
Discharge overcurrent detection delay time tDIOV
tDIOV 0.6
tDIOV
tDIOV 1.6
5
Load short-circuiting detection delay time
tSHORT
tSHORT 0.5 tSHORT tSHORT 1.7
5
Charge overcurrent detection delay time
tCIOV
tCIOV 0.6
tCIOV
tCIOV 1.6
5
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by
design, not tested in production.
*2. The temperature characteristics of VDIOV is determined depending on the setting of VDIOV, and accords closely with the
temperature characteristics of ON resistance of the charge-discharge control FET.
Refer to "2. 5 VDIOV vs. Ta" in " Characteristics (Typical Data)" for details.
9
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
Test Circuits
Caution Unless otherwise specified, the output voltage levels "H" and "L" at CO pin (VCO) and DO pin (VDO) are
judged by the threshold voltage (1.0 V) of the N-channel FET. Judge the CO pin level with respect to
VVM and the DO pin level with respect to VSS.
1. Overcharge detection voltage, overcharge release voltage
(Test circuit 1)
Overcharge detection voltage (VCU) is defined as the voltage V1 at which VCO goes from "H" to "L" when the voltage
V1 is gradually increased from the starting conditions of V1 = 3.4 V. Overcharge release voltage (VCL) is defined as
the voltage V1 at which VCO goes from "L" to "H" when the voltage V1 is then gradually decreased. Overcharge
hysteresis voltage (VHC) is defined as the difference between VCU and VCL.
2. Overdischarge detection voltage, overdischarge release voltage
(Test circuit 2)
Overdischarge detection voltage (VDL) is defined as the voltage V1 at which VDO goes from "H" to "L" when the
voltage V1 is gradually decreased from the starting conditions of V1 = 3.4 V, V2 = 0 V. Overdischarge release
voltage (VDU) is defined as the voltage V1 at which VDO goes from "L" to "H" when the voltage V1 is then gradually
increased from the starting condition of V2 = 0.02 V. Overdischarge hysteresis voltage (VHD) is defined as the
difference between VDU and VDL.
3. Discharge overcurrent detection voltage
(Test circuit 2)
Discharge overcurrent detection voltage (VDIOV) is defined as the voltage V2 whose delay time for changing VDO from
"H" to "L" is discharge overcurrent detection delay time (tDIOV) when the voltage V2 is increased from the starting
conditions of V1 = 3.4 V, V2 = 0 V.
4. Discharge overcurrent release voltage (Release condition of discharge overcurrent status "load
disconnection")
(Test circuit 2)
Set V1 = 3.4 V, V2 = 0 V. Discharge overcurrent release voltage (VRIOV) is defined as the voltage V2 at which VDO
goes from "L" to "H" when the voltage V2 is then gradually decreased from the starting condition of V2 = 3.4 V.
5. Load short-circuiting detection voltage
(Test circuit 2)
Load short-circuiting detection voltage (VSHORT) is defined as the voltage V2 whose delay time for changing VDO from
"H" to "L" is load short-circuiting detection delay time (tSHORT) when the voltage V2 is increased from the starting
conditions of V1 = 3.4 V, V2 = 0 V.
6. Charge overcurrent detection voltage
(Test circuit 2)
Charge overcurrent detection voltage (VCIOV) is defined as the voltage V2 whose delay time for changing VCO from
"H" to "L" is charge overcurrent detection delay time (tCIOV) when the voltage V2 is decreased from the starting
conditions of V1 = 3.4 V, V2 = 0 V.
7. Current consumption during operation
(Test circuit 3)
The current consumption during operation (IOPE) is the current that flows through the VDD pin (IDD) under the set
conditions of V1 = 3.4 V, V2 = 0 V.
10
Rev.1.1_03
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
8. Current consumption during power-down, current consumption during overdischarge
(Test circuit 3)
8. 1 With power-down function
The current consumption during power-down (IPDN) is IDD under the set condition of V1 = V2 = 1.5 V.
8. 2 Without power-down function
The current consumption during overdischarge (IOPED) is IDD under the set condition of V1 = V2 = 1.5 V.
9.
Resistance between VM pin and VDD pin
(Test circuit 3)
Resistance between VM pin and VDD pin is RVMD under the set conditions of V1 = 1.8 V, V2 = 0 V.
10. Resistance between VM pin and VSS pin (Release condition of discharge overcurrent status
"load disconnection")
(Test circuit 3)
Resistance between VM pin and VSS pin is RVMS under the set conditions of V1 = 3.4 V, V2 = 1.0 V.
11. CO pin resistance "H"
(Test circuit 4)
The CO pin resistance "H" (RCOH) is the resistance between VDD pin and CO pin under the set conditions of V1 = 3.4 V,
V2 = 0 V, V3 = 3.0 V.
12. CO pin resistance "L"
(Test circuit 4)
The CO pin resistance "L" (RCOL) is the resistance between VM pin and CO pin under the set conditions of V1 = 4.6 V,
V2 = 0 V, V3 = 0.4 V.
13. DO pin resistance "H"
(Test circuit 4)
The DO pin resistance "H" (RDOH) is the resistance between VDD pin and DO pin under the set conditions of V1 = 3.4 V,
V2 = 0 V, V4 = 3.0 V.
14. DO pin resistance "L"
(Test circuit 4)
The DO pin resistance "L" (RDOL) is the resistance between VSS pin and DO pin under the set conditions of V1 = 1.8 V,
V2 = 0 V, V4 = 0.4 V.
15. Overcharge detection delay time
(Test circuit 5)
The overcharge detection delay time (tCU) is the time needed for VCO to go to "L" after the voltage V1 increases and
exceeds VCU under the set conditions of V1 = 3.4 V, V2 = 0 V.
16. Overdischarge detection delay time
(Test circuit 5)
The overdischarge detection delay time (tDL) is the time needed for VDO to go to "L" after the voltage V1 decreases
and falls below VDL under the set conditions of V1 = 3.4 V, V2 = 0 V.
11
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
17. Discharge overcurrent detection delay time
(Test circuit 5)
tDIOV is the time needed for VDO to go to "L" after the voltage V2 increases and exceeds VDIOV under the set
conditions of V1 = 3.4 V, V2 = 0 V.
18. Load short-circuiting detection delay time
(Test circuit 5)
tSHORT is the time needed for VDO to go to "L" after the voltage V2 increases and exceeds VSHORT under the set
conditions of V1 = 3.4 V, V2 = 0 V.
19. Charge overcurrent detection delay time
(Test circuit 5)
tCIOV is the time needed for VCO to go to "L" after the voltage V2 decreases and falls below VCIOV under the set
conditions of V1 = 3.4 V, V2 = 0 V.
20. 0 V battery charge starting charger voltage (0 V battery charge function "available")
(Test circuit 2)
The 0 V battery charge starting charger voltage (V0CHA) is defined as absolute value of the voltage V2 at which VCO
goes to "H" (VCO = VDD) when the voltage V2 is gradually decreased under the set condition of V1 = V2 = 0 V.
21. 0 V battery charge inhibition battery voltage (0 V battery charge function "unavailable")
(Test circuit 2)
The 0 V battery charge inhibition battery voltage (V0INH) is defined as the voltage V1 at which VCO goes to "H" (VCO
= VDD) when the voltage V1 is gradually increased under the set conditions of V1 = 0 V, V2 = 2.0 V.
12
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
R1
= 330
VDD
VDD
V1
S-8250B Series
V1
C1
= 0.1 F
VSS
VM
S-8250B Series
VSS
CO
DO
V VDO
CO
DO
V VCO
COM
V VDO
V2
V VCO
COM
Figure 4 Test Circuit 1
Figure 5 Test Circuit 2
IDD
A
VM
VDD
VDD
V1
V1
S-8250B Series
S-8250B Series
VSS
VSS
VM
DO
CO
VM
CO
DO
IVM A
V2
A IDO
A ICO
V4
V3
V2
COM
COM
Figure 6 Test Circuit 3
Figure 7 Test Circuit 4
VDD
V1
S-8250B Series
VSS
VM
DO
Oscilloscope
CO
Oscilloscope
V2
COM
Figure 8 Test Circuit 5
13
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
Operation
Remark Refer to " Battery Protection IC Connection Example".
1. Normal status
The S-8250B Series monitors the voltage of the battery connected between the VDD pin and VSS pin and the voltage
between the VM pin and VSS pin to control charging and discharging. When the battery voltage is in the range from
the overdischarge detection voltage (VDL) to the overcharge detection voltage (VCU), and the VM pin voltage is in the
range from the charge overcurrent detection voltage (VCIOV) to the discharge overcurrent detection voltage (VDIOV),
the S-8250B Series turns both the charge and discharge control FETs on. This condition is called the normal status,
and in this condition charging and discharging can be carried out freely.
The resistance between the VM pin and VDD pin (RVMD) and the resistance between the VM pin and VSS pin (RVMS)
are not connected in the normal status.
Caution When the battery is connected for the first time, the S-8250B Series may not be in the normal status.
In this case, short the VM pin and VSS pin, or set the VM pin voltage at the level of VCIOV or more
and at the level of VDIOV or less by connecting the charger. The S-8250B Series then becomes the
normal status.
2. Overcharge status
2. 1 VCL VCU (Product in which overcharge release voltage differs from overcharge detection voltage)
When the battery voltage becomes higher than VCU during charging in the normal status and detection continues
for the overcharge detection delay time (tCU) or longer, the S-8250B Series turns the charge control FET off to
stop charging. This condition is called the overcharge status.
The overcharge status is released in the following two cases.
(1) In the case that the VM pin voltage is lower than VDIOV, the S-8250B Series releases the overcharge status
when the battery voltage falls below overcharge release voltage (VCL).
(2) In the case that the VM pin voltage is equal to or higher than VDIOV, the S-8250B Series releases the
overcharge status when the battery voltage falls below VCU.
When the discharge is started by connecting a load after the overcharge detection, the VM pin voltage rises by
the Vf voltage of the parasitic diode than the VSS pin voltage, because the discharge current flows through the
parasitic diode in the charge control FET. If this VM pin voltage is equal to or higher than VDIOV, the S-8250B
Series releases the overcharge status when the battery voltage is equal to or lower than VCU.
Caution
If the battery is charged to a voltage higher than VCU and the battery voltage does not fall below VCU
even when a heavy load is connected, discharge overcurrent detection and load short-circuiting
detection do not function until the battery voltage falls below VCU. Since an actual battery has an
internal impedance of tens of m, the battery voltage drops immediately after a heavy load that
causes overcurrent is connected, and discharge overcurrent detection and load short-circuiting
detection function.
2. 2 VCL = VCU (Product in which overcharge release voltage is the same as overcharge detection voltage)
When the battery voltage becomes higher than VCU during charging in the normal status and detection continues
for the overcharge detection delay time (tCU) or longer, the S-8250B Series turns the charge control FET off to
stop charging. This condition is called the overcharge status.
In the case that the VM pin voltage is higher than 0 V typ., the S-8250B Series releases the overcharge status
when the battery voltage falls below VCU.
Caution 1. If the battery is charged to a voltage higher than VCU and the battery voltage does not fall below
VCU even when a heavy load is connected, discharge overcurrent detection and load shortcircuiting detection do not function until the battery voltage falls below VCU. Since an actual
battery has an internal impedance of tens of m, the battery voltage drops immediately after a
heavy load that causes overcurrent is connected, and discharge overcurrent detection and load
short-circuiting detection function.
2. When a charger is connected after overcharge detection, the overcharge status is not released
even if the battery voltage is below VCL. The overcharge status is released when the VM pin
voltage goes over 0 V typ. by removing the charger.
14
Rev.1.1_03
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
3. Overdischarge status
When the battery voltage falls below VDL during discharging in the normal status and the condition continues for the
overdischarge detection delay time (tDL) or longer, the S-8250B Series turns the discharge control FET off to stop
discharging. This condition is called the overdischarge status.
Under the overdischarge status, VDD pin and VM pin are shorted by RVMD in the S-8250B Series. The VM pin voltage
is pulled up by RVMD.
RVMS is not connected in the overdischarge status.
3. 1 With power-down function
Under the overdischarge status, when voltage difference between VDD pin and VM pin is 0.8 V typ. or lower, the
power-down function works and the current consumption is reduced to the current consumption during powerdown (IPDN). By connecting a battery charger, the power-down function is released when the VM pin voltage is
0.7 V typ. or lower.
When a battery is not connected to a charger and the VM pin voltage 0.7 V typ., the S-8250B Series
maintains the overdischarge status even when the battery voltage reaches VDU or higher.
When a battery is connected to a charger and 0.7 V typ.the VM pin voltage 0 V typ., the battery voltage
reaches VDU or higher and the S-8250B Series releases the overdischarge status.
When a battery is connected to a charger and 0 V typ.the VM pin voltage, the battery voltage reaches VDL or
higher and the S-8250B Series releases the overdischarge status.
3. 2 Without power-down function
Under the overdischarge status, the power-down function does not work even when voltage difference between
VDD pin and VM pin is 0.8 V typ. or lower.
When a battery is not connected to a charger and the VM pin voltage 0.7 V typ., the battery voltage reaches
VDU or higher and the S-8250B Series releases the overdischarge status.
When a battery is connected to a charger and 0.7 V typ.the VM pin voltage 0 V typ., the battery voltage
reaches VDU or higher and the S-8250B Series releases the overdischarge status.
When a battery is connected to a charger and 0 V typ.the VM pin voltage, the battery voltage reaches VDL or
higher and the S-8250B Series releases the overdischarge status.
4. Discharge overcurrent status (Discharge overcurrent, load short-circuiting)
When a battery in the normal status is in the status where the VM pin voltage is equal to or higher than VDIOV because
the discharge current is equal to or higher than the specified value and the status lasts for the discharge overcurrent
detection delay time (tDIOV) or longer, the discharge control FET is turned off and discharging is stopped. This status
is called the discharge overcurrent status.
4. 1 Release condition of discharge overcurrent status "load disconnection"
In the discharge overcurrent status, the VM pin and VSS pin are shorted by RVMS in the S-8250B Series.
However, the VM pin voltage is the VDD pin voltage due to the load as long as the load is connected. When the
load is disconnected, the VM pin voltage returns to the VSS pin voltage. If the VM pin voltage returns to the
discharge overcurrent release voltage (VRIOV) or lower, the S-8250B Series releases the discharge overcurrent
status.
RVMD is not connected in the discharge overcurrent status.
4. 2 Release condition of discharge overcurrent status "charger connection"
In the discharge overcurrent status, the VM pin and VDD pin are shorted by RVMD in the S-8250B Series.
If the VM pin voltage returns to VDIOV or lower by connecting a charger, the S-8250B Series releases the
discharge overcurrent status.
RVMS is not connected in the discharge overcurrent status.
5. Charge overcurrent status
When a battery in the normal status is in the status where the VM pin voltage is equal to or lower than VCIOV because
the charge current is equal to or higher than the specified value and the status lasts for the charge overcurrent
detection delay time (tCIOV) or longer, the charge control FET is turned off and charging is stopped. This status is
called the charge overcurrent status.
The S-8250B Series releases the charge overcurrent status when the VM pin voltage returns to 0 V typ. or higher by
removing the charger.
The charge overcurrent detection does not function in the overdischarge status.
15
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
6. 0 V battery charge function "available"
This function is used to recharge a connected battery whose voltage is 0 V due to self-discharge. When the 0 V
battery charge starting charger voltage (V0CHA) or a higher voltage is applied between the EB pin and EB pin by
connecting a charger, the charge control FET gate is fixed to the VDD pin voltage. When the voltage between the
gate and source of the charge control FET becomes equal to or higher than the threshold voltage due to the charger
voltage, the charge control FET is turned on to start charging. At this time, the discharge control FET is off and the
charge current flows through the internal parasitic diode in the discharge control FET. When the battery voltage
becomes equal to or higher than VDU, the S-8250B Series enters the normal status.
Caution 1. Some battery providers do not recommend charging for a completely self-discharged battery.
Please ask the battery provider to determine whether to enable or inhibit the 0 V battery charge
function.
2. The 0 V battery charge function has higher priority than the charge overcurrent detection
function. Consequently, a product in which use of the 0 V battery charge function is enabled
charges a battery forcibly and the charge overcurrent cannot be detected when the battery
voltage is lower than VDL.
7. 0 V battery charge function "unavailable"
This function inhibits recharging when a battery that is internally short-circuited (0 V battery) is connected. When the
battery voltage is the 0 V battery charge inhibition battery voltage (V0INH) or lower, the charge control FET gate is
fixed to the EB pin voltage to inhibit charging. When the battery voltage is V0INH or higher, charging can be
performed.
Caution Some battery providers do not recommend charging for a completely self-discharged battery.
Please ask the battery provider to determine whether to enable or inhibit the 0 V battery charge
function.
8. Delay circuit
The detection delay times are determined by dividing a clock of approximately 4 kHz by the counter.
Remark
tDIOV and tSHORT start when VDIOV is detected. When VSHORT is detected over tSHORT after VDIOV, the S-8250B
Series turns the discharge control FET off within tSHORT from the time of detecting VSHORT.
VDD
DO pin voltage
tD
VSS
VDD
tSHORT
0 tD tSHORT
Time
VSHORT
VM pin voltage
VDIOV
VSS
Time
Figure 9
16
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
Timing Chart
1. Overcharge detection, overdischarge detection
VCU
VCL (VCU VHC)
Battery voltage
VDU (VDL VHD)
VDL
VDD
DO pin voltage
VSS
VDD
CO pin voltage
VSS
VEB
VDD
VM pin voltage
VDIOV
VSS
VCIOV
VEB
Charger connection
Load connection
Overcharge detection delay time (tCU)
Status
*1
(1)
Overdischarge detection delay time (tDL)
(2)
(1)
(3)
(1)
*1. (1): Normal status
(2): Overcharge status
(3): Overdischarge status
Remark The charger is assumed to charge with a constant current.
Figure 10
17
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
2. Discharge overcurrent detection
2. 1 Release condition of discharge overcurrent status "load disconnection"
VCU
VCL (VCU VHC)
Battery voltage
VDU (VDL VHD)
VDL
VDD
DO pin voltage
VSS
VDD
CO pin voltage
VSS
VM pin voltage
VDD
VRIOV
VSHORT
VDIOV
VSS
Load connection
Discharge overcurrent
detection delay time (tDIOV)
Status
*1
(1)
(2)
Load short-circuiting
detection delay time (tSHORT)
(1)
*1. (1): Normal status
(2): Discharge overcurrent status
Remark The charger is assumed to charge with a constant current.
Figure 11
18
(2)
(1)
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
2. 2 Release condition of discharge overcurrent status "charger connection"
VCU
VCL (VCU VHC)
Battery voltage
VDU (VDL VHD)
VDL
VDD
DO pin voltage
VSS
VDD
CO pin voltage
VSS
VDD
VM pin voltage
VSHORT
VDIOV
VSS
VCIOV
VEB
Charger connection
Load connection
Status*1
Load short-circuiting
detection delay time (tSHORT)
Discharge overcurrent
detection delay time (tDIOV)
(1)
(2)
(1)
(2)
(1)
*1. (1): Normal status
(2): Discharge overcurrent status
Remark The charger is assumed to charge with a constant current.
Figure 12
19
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
3. Charge overcurrent detection
VCU
VCL (VCUVHC )
Battery voltage
VDU (VDLVHD)
VDL
VDD
DO pin voltage
VSS
VDD
CO pin voltage
VSS
VEB
VDD
VM pin voltage
VSS
VCIOV
VEB
Charger connection
Load connection
Charge overcurrent detection
delay time (tCIOV)
Status
*1
(1)
(2)
*1. (1): Normal status
(2): Charge overcurrent status
(3): Overdischarge status
Remark The charger is assumed to charge with a constant current.
Figure 13
20
Overdischarge detection
Charge overcurrent detection
delay time (tDL)
delay time (tCIOV)
(1)
(3)
(1)
(2)
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
Battery Protection IC Connection Example
EB
R1
VDD
Battery C1
S-8250B Series
VSS
DO
CO
FET1
VM
FET2
R2
EB
Figure 14
Table 10 Constants for External Components
Symbol
Part
Purpose
Min.
Typ.
FET1
N-channel
MOS FET
Discharge control
FET2
N-channel
MOS FET
Charge control
R1
Resistor
ESD protection,
For power fluctuation
150
330
C1
Capacitor
For power fluctuation
0.068 F
0.1 F
*2.
*3.
*4.
*5.
Remark
Threshold voltage Overdischarge
*1
detection voltage
Gate to source withstand voltage
*2
Charger voltage
Threshold voltage Overdischarge
detection voltage *1
Gate to source withstand voltage
*2
Charger voltage
Resistance should be as small as
possible to avoid worsening the
510
overcharge detection accuracy due to
current consumption.*3
Connect a capacitor of 0.068 F or
1.0 F
higher between VDD pin and VSS pin.*4
Select as large a resistance as possible
4 k
to prevent current when a charger is
*5
connected in reverse.
charge current. If a FET with a threshold voltage equal
discharging may be stopped before overdischarge is
Protection for reverse
connection of a
1 k
2 k
charger
If the threshold voltage of a FET is low, the FET may not cut the
to or higher than the overdischarge detection voltage is used,
detected.
If the withstand voltage between the gate and source is lower than the charger voltage, the FET may be destroyed.
An accuracy of overcharge detection voltage is guaranteed by R1 = 330 . Connecting resistors with other values
worsen the accuracy. In case of connecting a larger resistor to R1, the voltage between the VDD pin and VSS pin may
exceed the absolute maximum rating because the current flows to the S-8250B Series from the charger due to reverse
connection of charger. Connect a resistor of 150 or more to R1 for ESD protection.
When connecting a resistor less than 150 to R1 or a capacitor less than 0.068 F to C1, the S-8250B Series may
malfunction when power dissipation is largely fluctuated.
When a resistor more than 4 k is connected to R2, the charge current may not be cut.
R2
*1.
Max.
Resistor
Caution 1. The above constants may be changed without notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above
example of connection. In addition, the example of connection shown above and the constant do not
guarantee proper operation. Perform thorough evaluation using the actual application to set the
constant.
21
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
Precautions
The application conditions for the input voltage, output voltage, and load current should not exceed the package
power dissipation.
Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
ABLIC Inc. claims no responsibility for any and all disputes arising out of or in connection with any infringement by
products including this IC of patents owned by a third party.
22
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
Characteristics (Typical Data)
1. Current consumption
1. 2 IOPE vs. VDD
6
6
5
5
4
4
IOPE [μA]
IOPE [μA]
1. 1 IOPE vs. Ta
3
2
1
0
3
2
1
−40 −25
0
0
25
Ta [°C]
50
75 85
0
25
Ta [°C]
50
75 85
1.5
2.5
3.5
4.5
VDD [V]
5.5
6.5
1. 3 IPDN vs. Ta
100
IPDN [nA]
75
50
25
0
2. Detection voltage
2. 2 VCL vs. Ta
4.32
4.22
4.30
4.20
4.28
4.18
VCL [V]
VCU [V]
2. 1 VCU vs. Ta
4.26
4.24
4.14
4.22
−40 −25
4.12
0
25
Ta [°C]
50
75 85
2. 3 VDL vs. Ta
2.40
2.40
2.35
2.35
2.30
2.25
2.20
−40 −25
0
25
Ta [°C]
50
75 85
0
25
Ta [°C]
50
75 85
2. 4 VDU vs. Ta
VDU [V]
VDL [V]
4.16
2.30
2.25
−40 −25
2.20
0
25
Ta [°C]
50
75 85
−40 −25
23
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
VDD = 3.4 V
2. 6 VDIOV vs. VDD
0.16
0.16
0.14
0.14
VDIOV [V]
VDIOV [V]
2. 5 VDIOV vs. Ta
Rev.1.1_03
0.12
0.10
0.08
0.12
0.10
0.08
−40 −25
0
25
Ta [°C]
50
2.0
75 85
2.5
3.0
3.5
VDD [V]
4.0
4.5
n=1~3
0.550
0.550
0.525
0.525
VSHORT [V]
2. 8 VSHORT vs. VDD
VSHORT [V]
2. 7 VSHORT vs. Ta
0.500
0.475
0.450
−40 −25
0
25
Ta [°C]
50
−0.090
−0.090
−0.095
−0.095
VCIOV [V]
VCIOV [V]
−0.085
−0.100
−0.105
−0.115
−40 −25
2.5
3.0
3.5
VDD [V]
4.0
4.5
2.5
3.0
3.5
VDD [V]
4.0
4.5
2. 10 VCIOV vs. VDD
−0.085
−0.110
24
0.475
0.450
2.0
75 85
2. 9 VCIOV vs. Ta
0.500
−0.100
−0.105
−0.110
0
25
Ta [°C]
50
75 85
−0.115
2.0
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
3. Delay time
3. 1 tCU vs. Ta
3. 2 tDL vs. Ta
225
1600
200
tDL [ms]
tCU [ms]
1350
1100
850
600
150
125
100
75
−40 −25
0
25
Ta [°C]
50
75 85
3. 3 tDIOV vs. Ta
55
55
45
45
35
25
15
−40 −25
−40 −25
15
0
25
Ta [°C]
50
75 85
2.0
400
350
350
tSHORT [μs]
450
400
tSHORT [μs]
450
300
250
200
2.5
3.0
3.5
VDD [V]
4.0
4.5
2.5
3.0
3.5
VDD [V]
4.0
4.5
2.5
3.0
3.5
VDD [V]
4.0
4.5
300
250
200
−40 −25
150
0
25
Ta [°C]
50
75 85
3. 7 tCIOV vs. Ta
2.0
3. 8 tCIOV vs. VDD
14
14
12
12
tCIOV [ms]
tCIOV [ms]
75 85
50
25
3. 6 tSHORT vs. VDD
10
8
10
8
6
6
4
25
Ta [°C]
35
3. 5 tSHORT vs. Ta
150
0
3. 4 tDIOV vs. VDD
tDIOV [ms]
tDIOV [ms]
175
4
−40 −25
0
25
Ta [°C]
50
75 85
2.0
25
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
4. Output resistance
4. 2 RCOL vs. VCO
20
15
RCOL [kΩ]
RCOH [kΩ]
4. 1 RCOH vs. VCO
20
10
5
15
10
5
0
1
2
3
4
0
1
VCO [V]
20
20
15
15
10
5
10
5
5
0
1
2
VDO [V]
26
4
4. 4 RDOL vs. VDO
RDOL [kΩ]
RDOH [kΩ]
4. 3 RDOH vs. VDO
2
3
VCO [V]
3
4
0
0.5
1.0
VDO [V]
1.5
2.0
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8250B Series
Rev.1.1_03
Marking Specification
1.
SNT-6A
Top view
6
5
(1) to (3):
(4) to (6):
4
Product code (refer to Product name vs. Product code)
Lot number
(1) (2) (3)
(4) (5) (6)
1
2
3
Product name vs. Product code
Product Name
S-8250BAB-I6T1U
S-8250BAC-I6T1U
S-8250BAF-I6T1U
S-8250BAK-I6T1U
S-8250BAL-I6T1U
S-8250BAM-I6T1U
S-8250BAN-I6T1U
S-8250BAS-I6T1U
S-8250BAV-I6T1U
(1)
4
4
4
4
4
4
4
4
4
Product Code
(2)
O
O
O
O
O
O
O
O
O
(3)
B
C
F
K
L
M
N
S
V
27
1.57±0.03
6
1
5
4
2
3
+0.05
0.08 -0.02
0.5
0.48±0.02
0.2±0.05
No. PG006-A-P-SD-2.1
TITLE
SNT-6A-A-PKG Dimensions
No.
PG006-A-P-SD-2.1
ANGLE
UNIT
mm
ABLIC Inc.
+0.1
ø1.5 -0
4.0±0.1
2.0±0.05
0.25±0.05
+0.1
1.85±0.05
ø0.5 -0
4.0±0.1
0.65±0.05
3 2 1
4
5 6
Feed direction
No. PG006-A-C-SD-2.0
TITLE
SNT-6A-A-Carrier Tape
No.
PG006-A-C-SD-2.0
ANGLE
UNIT
mm
ABLIC Inc.
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. PG006-A-R-SD-1.0
SNT-6A-A-Reel
TITLE
No.
PG006-A-R-SD-1.0
ANGLE
QTY.
UNIT
mm
ABLIC Inc.
5,000
0.52
1.36
2
0.52
0.2 0.3
1.
2.
1
(0.25 mm min. / 0.30 mm typ.)
(1.30 mm ~ 1.40 mm)
0.03 mm
SNT
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package ( 1.30 mm ~ 1.40 mm ).
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
1.
2.
(0.25 mm min. / 0.30 mm typ.)
(1.30 mm ~ 1.40 mm)
No. PG006-A-L-SD-4.1
TITLE
SNT-6A-A
-Land Recommendation
No.
PG006-A-L-SD-4.1
ANGLE
UNIT
mm
ABLIC Inc.
Disclaimers (Handling Precautions)
1.
All the information described herein (product data, specifications, figures, tables, programs, algorithms and
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.
2.
The circuit examples and the usages described herein are for reference only, and do not guarantee the success of
any specific mass-production design.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the reasons other than the products
described herein (hereinafter "the products") or infringement of third-party intellectual property right and any other
right due to the use of the information described herein.
3.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the incorrect information described
herein.
4.
Be careful to use the products within their ranges described herein. Pay special attention for use to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by failures and / or accidents, etc. due to
the use of the products outside their specified ranges.
5.
Before using the products, confirm their applications, and the laws and regulations of the region or country where they
are used and verify suitability, safety and other factors for the intended use.
6.
When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-related
laws, and follow the required procedures.
7.
The products are strictly prohibited from using, providing or exporting for the purposes of the development of
weapons of mass destruction or military use. ABLIC Inc. is not liable for any losses, damages, claims or demands
caused by any provision or export to the person or entity who intends to develop, manufacture, use or store nuclear,
biological or chemical weapons or missiles, or use any other military purposes.
8.
The products are not designed to be used as part of any device or equipment that may affect the human body, human
life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control
systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment,
aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses by
ABLIC, Inc. Do not apply the products to the above listed devices and equipments.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by unauthorized or unspecified use of
the products.
9.
In general, semiconductor products may fail or malfunction with some probability. The user of the products should
therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread
prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social
damage, etc. that may ensue from the products' failure or malfunction.
The entire system in which the products are used must be sufficiently evaluated and judged whether the products are
allowed to apply for the system on customer's own responsibility.
10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the
product design by the customer depending on the intended use.
11. The products do not affect human health under normal use. However, they contain chemical substances and heavy
metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be
careful when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used.
13. The information described herein contains copyright information and know-how of ABLIC Inc. The information
described herein does not convey any license under any intellectual property rights or any other rights belonging to
ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of this
document described herein for the purpose of disclosing it to a third-party is strictly prohibited without the express
permission of ABLIC Inc.
14. For more details on the information described herein or any other questions, please contact ABLIC Inc.'s sales
representative.
15. This Disclaimers have been delivered in a text using the Japanese language, which text, despite any translations into
the English language and the Chinese language, shall be controlling.
2.4-2019.07
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