CGHV27200
200 W, 2500-2700 MHz, GaN HEMT for LTE
Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
is designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV27200 ideal for 2.5-2.7 GHz LTE and BWA amplifier applications.
The transistor is input matched and supplied in a ceramic/metal flange package.
Package Type
: 440162 and
440161
PN: CGHV272
00F and CGH
V27200P
Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Units
Gain @ 46 dBm
15.0
16.0
16.0
dB
ACLR @ 46 dBm
-36.5
-37.5
-37.0
dBc
Drain Efficiency @ 46 dBm
29.0
28.5
29.0
%
Note:
Measured in the CGHV27200-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Features
2.5 - 2.7 GHz Operation
•
16 dB Gain
•
-37 dBc ACLR at 40 W PAVE
•
29 % Efficiency at 40 W PAVE
•
High Degree of DPD Correction Can be Applied
15
Rev 1.0 – May 20
•
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
VDSS
125
Volts
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
32
mA
25˚C
Maximum Drain Current1
IDMAX
12
A
25˚C
Soldering Temperature2
TS
245
˚C
τ
80
in-oz
Thermal Resistance, Junction to Case3
RθJC
1.22
˚C/W
85˚C, PDISS = 96 W
Thermal Resistance, Junction to Case4
RθJC
1.54
˚C/W
85˚C, PDISS = 96 W
TC
-40, +150
˚C
Screw Torque
Case Operating Temperature
5
Note:
1
Current limit for long term, reliable operation.
2
Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3
Measured for the CGHV27200P
4
Measured for the CGHV27200F
5
See also, the Power Dissipation De-rating Curve on Page 6
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 32 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 50 V, ID = 1.0 A
Saturated Drain Current2
IDS
24
28.8
–
A
Drain-Source Breakdown Voltage
VBR
150
–
–
VDC
VGS = -8 V, ID = 32 mA
DC Characteristics1
VDS = 6.0 V, VGS = 2.0 V
RF Characteristics (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted)
5
Saturated Output Power3,4
PSAT
–
300
–
W
VDD = 50 V, IDQ = 1.0 A
Pulsed Drain Efficiency3
η
–
62
–
%
VDD = 50 V, IDQ = 1.0 A, POUT = PSAT
Gain6
G
–
15.25
–
dB
VDD = 50 V, IDQ = 1.0 A, POUT = 46 dBm
ACLR
–
-37
–
dBc
VDD = 50 V, IDQ = 1.0 A, POUT = 46 dBm
η
–
30.5
–
%
VDD = 50 V, IDQ = 1.0 A, POUT = 46 dBm
VSWR
–
–
10 : 1
Y
No damage at all phase angles, VDD = 50 V, IDQ
= 1.0 A, POUT = 200 W Pulsed
Input Capacitance7
CGS
–
97
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance7
CDS
–
13.4
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.94
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
WCDMA Linearity6
Drain Efficiency
6
Output Mismatch Stress3
Dynamic Characteristics
Notes:
Measured on wafer prior to packaging.
2
Scaled from PCM data.
3
Pulse Width = 100 µS, Duty Cycle = 10%
4
PSAT is defined as IG = 3 mA peak.
5
Measured in CGHV27200-AMP.
6
Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
7
Includes package and internal matching components.
1
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGHV27200 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 1. - Small Signal Gain and Return Losses vs Frequency for the
CGHV27200 measured CGHV27200F
in CGHV27200-AMP
Amplifier Circuit
Sparameters
VDD = Vdd
50 V,= I50
=
1.0
A
V,
Idq
=
1.0
A
DQ
25
20
15
Magnitude (dB)
10
5
0
-5
-10
S21
-15
S11
S22
-20
2.3
2.4
2.5
2.6
2.7
Frequency (GHz)
2.8
2.9
Figure 2. - Typical Pulsed Measurements vs Input Power
of the CGHV27200 measured in CGHV27200-AMP Amplifier Circuit.
CGHV27200 Pulsed Measurements vs Input Power
IDQ ==50
1.0
A, Freq
2.6=GHz,
Pulse
Width
µs,Duty
Duty
Cycle
VDS = 50 V,Vdd
V, Idq
= 1 A, =Freq
2.6 GHz,
Pulse
Width =
= 100
100 us,
Cycle
= 10=%10 %
350
70
Drain Efficiency
60
Output Power (W)
250
50
Output Power
Output Power
Gain
Drain Eff
200
40
150
30
Gain
100
20
50
10
0
5
10
15
20
25
Input Power (dBm)
30
35
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGHV27200 Rev 1.0
40
45
Gain (dB) & Drain Efficiency (%)
300
0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 3. - Typical Linearity vs Output Power for the
CGHV27200 measured in CGHV27200-AMP Amplifier Circuit
A, Freq Linearity
= 2.6 GHz,
1c WCDMA
7.5 dB PAR
VDD = 50 V, IDQ = 1.0
CGHV27200
vs Output
Power
Vdd = 50 V, Idq = 1 A, Freq = 2.6 GHz, 1c WCDMA 7.5 dB PAR
35
10
0
Gain
Drain Efficiency
25
-10
ACLR
Drain Efficiency
Gain
20
15
-20
-30
ACLR
10
-40
5
-50
0
25
30
35
40
45
Average Output Power (dBm)
50
Adjacent Channel Power (dBc)
Gain (dB) & Drain Efficiency (%)
30
-60
Figure 4. - Typical Linearity at PAVE = 46 dBm over Frequency
of the CGHV27200 measured in CGHV27200-AMP Amplifier Circuit.
CGHV27200
Pave
= 47 dBm7.5
overdB
Frequency
VDD =
50 V, IDQ Linearity
= 1.0 A,at1c
WCDMA
PAR
Vdd = 50 V, Idq = 1 A, 1c WCDMA 7.5 dB PAR
35
-32
Drain Efficiency
-33
25
-34
20
-35
Gain
15
-36
10
Output Power
ACP
5
Gain
-38
Drain Efficiency
0
2.35
ACP
2.40
2.45
Drain Efficiency
2.50
2.55
Gain
2.60
2.65
Frequency (GHz)
2.70
2.75
2.80
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGHV27200 Rev 1.0
-37
Adjacent Channel Power (dBc)
Gain (dB) & Drain Efficiency (%)
30
-39
2.85
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 5.CGHV27200
- Typical Linearity
DPDvs
vsOutput
OutputPower
Power
Linearity under
under DPD
VDD = 50
V,=IDQ
= 2.6
GHz,
1c1c
WCDMA
Vdd
50=V,1.0
IdqA,
= 1Freq
A, Freq
= 2.6
GHz,
WCDMA7.5
7.5 dB
dB PAR
PAR
35
5
Gain - Uncorrected
Gain - Corrected
-5
Drain Efficiency - Uncorrected
Drain Efficiency - Corrected
25
-15
ACP - Uncorrected
ACP - Corrected
20
-25
15
-35
10
-45
5
-55
0
36
38
40
42
44
Average Output Power (dBm)
46
48
50
Adjacent Channel Power (dBc)
Gain (dB) & Drain Efficiency (%)
30
-65
Figure 6. - Spectral Mask at PAVE = 46 dBm with and without DPD
CGHV27200
at Pave
= 47 dBm7.5
with
and
without DPD
VDD = 50Spectral
V, IDQ =Mask
1.0 A,
1c WCDMA
dB
PAR
Vdd = 50 V, Idq = 1 A, Freq = 2.6 GHz, 1c WCDMA 7.5 dB PAR
0
-10
-20
-30
Uncorrected
-40
Corrected
-50
-60
-70
-80
2.585
2.590
2.595
2.600
2.605
2.610
2.615
Frequency (GHz)
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGHV27200 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
FigureCGHV27200
7. - Intermodulation
Distortion
Products
vs vs
Output
Power
Intermodulation
Distortion
Products
Output
Power
VDD = 50
V,=IDQ
Spacing
= 100
Vdd
50=V,1.0
Idq A,
= 1Tone
A, Tone
Spacing
= 100kHz
kHz
-20
Intermodulation Distortion (dBc)
-30
-40
-50
-IMD3
-60
+IMD3
-IMD5
+IMD5
-IMD7
-70
-80
+IMD7
25
30
35
40
45
50
Average Output Power (dBm)
Figure 8. - Power Dissipation Derating Curve
100
90
440161 Package
80
440162 Package
Power Dissipation (W)
70
60
50
Note 1
40
30
20
10
0
0
25
50
75
100
125
150
Maximum Case Temperature ( C)
175
200
225
250
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGHV27200 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
2500
11.14 - j14.20
4.66 - j0.69
2550
9.58 - j14.73
4.51 - j0.92
2600
7.99 - j14.81
4.30 - j1.12
2650
6.53 - j14.52
4.02 - j1.27
2700
5.28 - j13.97
3.70 - j1.36
Note1: VDD = 50 V, IDQ = 1.0 A. In the 440162 package.
Note2: Impedances are extracted from CGHV27200-AMP demonstration circuit
and are not source and load pull data derived from transistor.
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGHV27200 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV27200-AMP Demonstration Amplifier Circuit Schematic
CGHV27200-AMP Demonstration Amplifier Circuit Outline
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGHV27200 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV27200-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 1/16 W, 0603, 1%, 150 OHMS
R2
RES, 1/16 W, 0603, 1%, 5.1 OHMS
1
C1
CAP, 6.2 pF, +/-0.25 pF, 0603, ATC600S
1
CAP, 27 pF, +/-5%, 0603, ATC600S
1
C2
C3,C9,C15
C4,C10
C5,C11
C6,C12,C16
C7
C8
1
CAP, 8.2 pF, +/-0.25 pF, 0603, ATC600S
3
CAP, 82.0 pF, +/-5%, 0603, ATC600S
2
CAP, 470 pF, 5%, 100 V, 0603, X7R
2
CAP, 33000 pF, 0805, 100 V, X7R
3
CAP, 10 UF, 16V, TANTALUM
1
CAP, 27 pF, +/-5%, 250 V, 0603, ATC600S
1
CAP, 1.0 UF, 100 V, 10%, X7R, 1210
2
C14
CAP, 100 UF, +/-20%, 160V, ELECTROLYTIC
2
C18
CAP, 33 UF, 20%, G CASE
1
CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE,
BLUNT POST
2
CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS
1
PCB, RO4350, 0.020” THK, CGHV27200
1
2-56 SOC HD SCREW 1/4 SS
4
#2 SPLIT LOCKWASHER SS
4
CGHV27200
1
C13,C17
J1,J2
J3
CGHV27200-AMP Demonstration Amplifier Circuit
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGHV27200 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGHV27200F (Package Type — 440162)
Product Dimensions CGHV27200P (Package Type — 440161)
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGHV27200 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGHV27200F
GaN HEMT
Each
2.709 in
CGHV27200P
GaN HEMT
Each
4.584 in
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGHV27200-TB
CGHV27200-AMP
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGHV27200 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CGHV27200 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
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