CGH31240F

CGH31240F 240 W, 2.7-3.1 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Description Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type: 440201 PN: CGH31240F Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.7 GHz 2.8 GHz 2.9 GHz 3.0 GHz 3.1 GHz Units Output Power 243 249 249 245 243 W Gain 11.9 11.9 11.9 11.9 11.9 dB Power Added Efficiency 60 61 60 59 52 % Note: Measured in the CGH31240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm Features • • • • 2.7 - 3.1 GHz Operation 12 dB Power Gain 60% Power Added Efficiency < 0.2 dB Pulsed Amplitude Droop Large Signal Models Available for ADS and MWO Rev 2.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH31240F 2 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Pulse Width PW 1 ms Duty Cycle DC 50 % Drain-Source Voltage VDSS 120 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Power Dissipation PDISS 345 Watts Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 60 mA 25˚C Maximum Drain Current IDMAX 24 A 25˚C Soldering Temperature TS 245 ˚C Screw Torque τ 40 in-oz Thermal Resistance, Junction to Case3 RθJC 0.5 ˚C/W 85˚C Case Operating Temperature TC -40, +150 ˚C 30 seconds 1 2 3 Conditions Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at wolfspeed.com/RF/Document-Library 3 Measured for the CGH31240F at PDISS = 280 W. Pulse Width = 300 μS, Duty Cycle = 20% Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 57.6 mA VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 1.0 mA IDS 46.4 56.0 – A VDS = 6.0 V, VGS = 2.0 V VBR 84 – – VDC VGS = -8 V, ID = 57.6 mA DC Characteristics 1 Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current 2 Drain-Source Breakdown Voltage RF Characteristics (TC = 25˚C, F0 = 2.7, 2.9, 3.1 GHz unless otherwise noted) 3 Output Power POUT 200 250 _ W VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Power Added Efficiency1 at 2.7 GHz PAE 49 54 – % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Power Added Efficiency2 at 2.9 GHz PAE 52 58 – % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Power Added Efficiency3 at 3.1 GHz PAE 42 49 – % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Power Gain GP 11 12 – dB VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm Small Signal Gain S21 14 16 – dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm Input Capacitance S11 – -12 -8.0 dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm Output Capacitance S22 – -6.0 -4.5 dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm Feedback Capacitance D – 0.15 – dB VDD = 28 V, IDQ = 1.0 A Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in CGH31240F-AMP. Pulse Width = 300 μS, Duty Cycle = 20%. Rev 2.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH31240F 3 Typical Performance Figure 1. Gain and Return Losses vs Frequency of the CGH31240F Measured in CGH31240F-AMP Amplifier Circuit VDS = 28 V, IDS = 1 A CGH31240 Sparameters 20 Gain (dB) 15 5 Magnitude (dB) Magnitude (dB) 10 0 ORL (dB) -5 -10 IRL (db) -15 -20 S21 -25 S22 -30 2000 S11 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 Frequency (MHz) Frequency (GHz) Figure 2. Typical Pulsed Output Power and Power Gain vs Frequency of the CGH31240F Measured in CGH31240F-AMP Amplifier Circuit CGH31240 RF Performance vs=Frequency VDS = 28 V, IDS = 1 A, PIN = 42 dBm, Pulse Width 300 μS, Duty Cycle = 20% 250 15 240 14 230 13 220 12 210 200 2600 Pout (W) 11 Power Gain (dB) 2700 Gain (dB) 16 Gain (dB) Output Power (W) Output Power (W) Pin = 42 dBm - Pulse = 300 us @ 20 % duty cycle 260 2800 2900 3000 3100 10 3200 Frequency (MHz) Frequency (MHz) Rev 2.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH31240F 4 Typical Performance Figure 3. CGH31240 Output Power vs Input Power VDS = 28 V, IDS = 1 A, Pulse Width = 300 μS, Duty Cycle = 20% CGH31240 Output Power vs Input Power Vdd = 28 V, Idq = 1 A, PW = 300 us, Duty Cycle = 20 % 60 55 Output Power (dBm) Output Power (dBm) 2.7 GHz 50 2.9 GHz 3.1 GHz 45 40 35 30 25 20 5 10 15 20 25 30 35 40 45 50 Input Power (dBm) Input Power (dBm) Figure 4. CGH31240 PAE & Gain vs Input Power VDS = 28 V, IDS = 1 PAE A, Pulse Width = 300Power μS, Duty CGH31240 & Gain vs Input and Cycle Fixture= 20% 60 16 50 14 40 12 PAE - 2.7 GHz PAE - 2.9 GHz PAE - 3.1 GHz Gain - 2.7 GHz Gain - 2.9 GHz Gain - 3.1 GHz 30 10 20 8 10 6 0 Gain (dB) 18 Gain (dB) PAE (%) PAE (%) Vdd = 28 V, Idq = 1A, PW = 300 us, Duty Cycle = 20 % 70 4 5 10 15 20 25 30 35 40 45 50 Input Power (dBm) Input Power (dBm) Rev 2.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH31240F 5 Typical Performance Figure 5. Typical Pulsed Output Power and Power Added Efficiency vs Frequency of the CGH31240F Measured in CGH31240F-AMP Amplifier Circuit VDS = 28 V, IDS 1 A, PIN = 42 dBm, Pulse Width = 300 μS, Duty Cycle = 20% 16 250 15 240 14 230 13 220 12 Pout (W) 210 11 Power Gain (dB) 200 2600 PAE (%) 260 Gain (dB) Output Power (W) Output Power (dBm) CGH31240 RF Performance vs Frequency Pin = 42 dBm - Pulse = 300 us @ 20 % duty cycle 2700 2800 2900 3000 10 3200 3100 Frequency (MHz) Frequency (MHz) Typical Pulse Droop Performance CGH31240F Pulsed Power Performance 54.3 54.2 300 us 5 % 300 us 10 % 300 us 20 % 300 us 25 % 1 ms 5 % 1 ms 10 % 1 ms 20 % 1 ms 25 % 5 ms 5 % 5 ms 10 % 5 ms 20 % 5 ms 25 % Output Power (dBm) Output Power (dBm) 54.1 54.0 53.9 53.8 53.7 53.6 53.5 Pulse Width Duty Cycle (%) Droop (dB) 10 us 50 us 100 us 300 us 1 ms 5 ms 5-25 5-25 5-25 5-25 5-25 5-25 0.05 0.05 0.10 0.15 0.30 0.60 53.4 53.3 -1 0 1 2 3 4 5 6 Time (ms) Time (ms) Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Rev 2.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH31240F 6 CGH31240 Pulse Transient Rth 1.0 0.9 Theta JC (oC/W) Theta JC (oC/W) 0.8 0.7 0.6 10 % Duty Cycle - Pdiss = 230 W 20 % Duty Cycle - Pdiss = 230 W 0.5 50 % Duty Cycle - Pdiss = 230 W 10 % Duty Cycle - Pdiss = 345 W 0.4 0.3 0.2 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 Pulse Width (seconds) Pulse Width (seconds) CGH31240 Transient Power Dissipation De-rating Curve CGH3x240F Pulsed Power Dissipation De-rating Curve 400 Power Dissipation Power Dissipation(W) (W) 350 300 100 us, 10 % 300 us, 20 % 1 ms, 20% 250 1 ms, 50 % 200 150 Note 1 100 50 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Rev 2.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH31240F 7 CGH31240F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 511 OHM, +/- 1%, 1/16W, 0603 1 R2 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 1 C1, C3 CAP, 10.0pF, +/-5%, 250V, 0603, ATC600S 2 C2 CAP, 6.8pF, +/- 0.25 pF, 250V, 0603, ATC600S 1 C4, C11 CAP, 470pF, +/-5%, 100V, 0603, X7R 2 C15 CAP, 33uF, 20%, G CASE 1 C5, C12 CAP, 33000 pF, 0805, 100V, X7R 2 C13 CAP, 1.0uF, 100V, 10%, X7R, 1210 1 C6 CAP, 10uF, 16V, TANTALUM 1 C9, C10 CAP, 10pF, +/- 1%, 250V, 0805 2 C16 CAP, 3300uF, +/-20%, 100V, ELECTROLYTIC 1 J1, J2 CONN, SMA, PANEL MOUNT JACK, FL 2 J3 HEADER, RT>PLZ, 0.1CEN LK 9POS 1 J4 CONNECTOR, SMB, STRAIGHT, JACK,SMD 1 W1 CABLE, 18 AWG, 4.2 1 L1 FERRITE, 22 OHM, 0805, BLM21PG220SN1 1 - PCB, RO4350, 2.5 X 4.0 X 0.030 1 Q1 CGH31240F 1 CGH31240F-AMP Demonstration Amplifier Circuit Rev 2.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH31240F 8 CGH31240F-AMP Demonstration Amplifier Circuit Outline CGH31240F-AMP Demonstration Amplifier Circuit Schematic Rev 2.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH31240F 9 Typical Package S-Parameters for CGH31240F (Small Signal, VDS = 28 V, IDQ = 1000 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.970 170.7 1.73 35.7 0.003 -50.20 0.880 172.0 600 MHz 0.972 167.9 1.42 26.4 0.003 -58.75 0.891 169.5 700 MHz 0.973 165.2 1.21 17.6 0.003 -66.68 0.899 166.8 800 MHz 0.974 162.4 1.07 9.4 0.003 -74.07 0.906 163.9 900 MHz 0.975 159.5 0.96 1.6 0.003 -81.04 0.911 160.9 1.0 GHz 0.975 156.5 0.90 -6.0 0.003 -87.75 0.914 157.6 1.1 GHz 0.974 153.3 0.85 -13.4 0.004 -94.31 0.915 154.2 1.2 GHz 0.974 150.0 0.83 -20.8 0.004 -100.84 0.916 150.6 1.3 GHz 0.973 146.4 0.83 -28.3 0.004 -107.45 0.915 146.8 1.4 GHz 0.971 142.6 0.85 -35.9 0.004 -114.23 0.912 142.6 1.5 GHz 0.969 138.5 0.89 -43.9 0.005 -121.30 0.908 138.0 1.6 GHz 0.966 133.9 0.96 -52.3 0.006 -128.79 0.902 133.0 1.7 GHz 0.963 128.8 1.05 -61.3 0.007 -136.83 0.893 127.4 1.8 GHz 0.958 123.1 1.18 -71.0 0.008 -145.62 0.883 121.1 1.9 GHz 0.951 116.4 1.37 -81.8 0.009 -155.39 0.869 113.7 2.0 GHz 0.940 108.4 1.62 -93.8 0.012 -166.47 0.851 105.1 2.1 GHz 0.924 98.7 1.98 -107.7 0.015 -179.29 0.828 94.6 2.2 GHz 0.899 86.5 2.49 -123.9 0.019 165.52 0.796 81.7 2.3 GHz 0.857 70.5 3.19 -143.3 0.026 147.11 0.753 65.3 2.4 GHz 0.786 48.8 4.11 -167.0 0.034 124.49 0.692 44.1 2.5 GHz 0.677 19.2 5.14 164.4 0.044 97.04 0.607 17.1 2.6 GHz 0.544 -19.8 5.99 132.0 0.053 65.78 0.507 -14.9 2.7 GHz 0.448 -66.0 6.37 98.8 0.058 33.68 0.424 -47.8 2.8 GHz 0.422 -109.5 6.35 67.2 0.060 3.29 0.380 -76.4 2.9 GHz 0.427 -143.8 6.19 37.7 0.060 -25.00 0.369 -99.2 3.0 GHz 0.421 -171.5 6.08 9.2 0.060 -52.23 0.370 -117.6 3.2 GHz 0.243 120.6 6.20 -53.0 0.064 -111.80 0.279 -141.6 3.4 GHz 0.472 -78.8 4.79 -135.3 0.051 168.82 0.437 -99.1 3.6 GHz 0.821 -139.7 2.06 160.3 0.023 107.35 0.777 -131.3 3.8 GHz 0.897 -168.1 0.91 121.3 0.010 71.59 0.877 -153.9 4.0 GHz 0.919 173.9 0.46 92.8 0.005 46.59 0.915 -169.9 4.2 GHz 0.925 159.9 0.26 69.5 0.003 26.99 0.931 177.2 4.4 GHz 0.925 147.6 0.16 49.0 0.002 10.54 0.937 165.9 4.6 GHz 0.920 136.2 0.10 30.7 0.001 -3.53 0.937 155.2 4.8 GHz 0.913 124.8 0.07 13.6 0.001 -16.16 0.932 144.6 5.0 GHz 0.903 113.2 0.05 -2.9 0.001 -27.84 0.923 133.8 5.2 GHz 0.891 101.1 0.04 -19.3 0.001 -39.20 0.911 122.4 5.4 GHz 0.877 88.0 0.03 -35.8 0.000 -50.53 0.895 109.8 5.6 GHz 0.860 73.9 0.03 -52.2 0.000 -61.60 0.875 95.9 5.8 GHz 0.842 58.5 0.02 -68.3 0.000 -72.36 0.852 80.2 6.0 GHz 0.824 41.6 0.02 -83.9 0.000 -82.61 0.828 62.1 To download the s-parameters in s2p format, go to the CGH31240F Product page and click on the documentation tab. Rev 2.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH31240F 10 Product Dimensions CGH31240F (Package Type — 440201) Rev 2.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH31240F 11 Product Ordering Information Order Number Description Unit of Measure CGH31240F GaN HEMT Each CGH31240F-AMP Test board with GaN HEMT installed Each Rev 2.1 – April 2020 Image 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH31240F 12 For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@cree.com Notes Disclaimer Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. Cree products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. No responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree. © 2010-2020 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev 2.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com