DISCRETE SEMICONDUCTORS
DATA SHEET
M3D065
BLF175
HF/VHF power MOS transistor
Product specification
Supersedes data of 1997 Dec 15
2003 Jul 22
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
FEATURES
BLF175
PIN CONFIGURATION
• High power gain
• Low intermodulation distortion
• Easy power control
• Good thermal stability
ook, halfpage
• Withstands full load mismatch
1
4
• Gold metallization ensures
excellent reliability.
d
g
DESCRIPTION
MBB072
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the HF/VHF frequency
range.
2
3
MSB057
The transistor has a 4-lead, SOT123A
flange package, with a ceramic cap.
All leads are isolated from the flange.
A marking code, showing gate-source
voltage (VGS) information is provided
for matched pair applications. Refer
to the handbook 'General' section for
further information.
Fig.1 Simplified outline and symbol.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
PINNING - SOT123A
PIN
WARNING
DESCRIPTION
1
drain
2
source
3
gate
4
source
s
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF
OPERATION
class-A
f
(MHZ)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
d3
(dB)
28
50
800
8 (PEP)
>24
−
24
typ. 28
> −40
typ. −44
< −40
typ. −64
24
24
Note
1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
power the values should be decreased by 6 dB.
2003 Jul 22
6
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
MGP069
MGP070
40
0
handbook, halfpage
handbook, halfpage
Gp
(dB)
d3
(dB)
30
−20
20
−40
10
−60
−80
0
0
5
10
15
20
PL (W) PEP
0
5
10
15
20
PL (W) PEP
Class-A operation; VDS = 50 V; IDQ = 0.8 A;
RGS = 24 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
solid line: Th = 25 °C.
dotted line: Th = 70 °C.
Class-A operation; VDS = 50 V; IDQ = 0.8 A;
RGS = 24 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
solid line: Th = 25 °C.
dotted line: Th = 70 °C.
Fig.9
Fig.10 Third order intermodulation distortion as a
function of load power; typical values.
Power gain as a function of load power;
typical values.
MGP071
MGP072
−20
40
handbook, halfpage
handbook, halfpage
Gp
(dB)
d3
(dB)
30
−40
20
10
−60
0
0
10
20
30
f (MHz)
40
0
10
20
30
f (MHz)
40
Class-A operation; VDS = 50 V; IDQ = 0.8 A;
PL = 8 W (PEP); RGS = 24 Ω; f1 − f2 = 1 MHz.
Class-A operation; VDS = 50 V; IDQ = 0.8 A;
Fig.11 Power gain as a function of frequency;
typical values.
Fig.12 Third order intermodulation distortion as a
function of frequency; typical values.
2003 Jul 22
PL = 8 W (PEP); RGS = 24 Ω; f1 − f2 = 1 MHz.
7
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
C4
R2
handbook, full pagewidth
C5
D.U.T.
T1
50 Ω
input
L4
C9
C1
L2
R1
C6
C7
L1
R3
C3
L3
C8
+VG
+VD
MGP073
f = 28 MHz.
Fig.13 Test circuit for class-A operation.
2003 Jul 22
50 Ω
output
C2
8
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
List of components (class-A test circuit)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1
multilayer ceramic chip capacitor
(note 1)
39 pF
C2
multilayer ceramic chip capacitor
3 × 10 nF
2222 852 47103
C3, C4, C6
multilayer ceramic chip capacitor
100 nF
2222 852 47104
C5
multilayer ceramic chip capacitor
10 nF
2222 852 47103
C7
multilayer ceramic chip capacitor
3 × 100 nF
2222 852 47104
C8
aluminium electrolytic capacitor
10 µF, 63 V
2222 030 28109
C9
multilayer ceramic chip capacitor
(note 1)
24 pF
L1
4 turns enamelled 0.6 mm copper
wire
86 nH
length 3.3 mm;
int. dia. 5 mm;
leads 2 × 2 mm
L2
36 turns enamelled 0.7 mm copper
wire wound on a rod grade 4B1
Ferroxcube drain choke
20 µH
length 30 mm;
int. dia. 5 mm
L3
grade 3B Ferroxcube wideband RF
choke
L4
8 turns enamelled 1 mm copper wire 189 nH
R1
0.4 W metal film resistor
24 Ω
R2
0.4 W metal film resistor
1500 Ω
R3
0.4 W metal film resistor
10 Ω
T1
4 : 1 transformer; 18 turns twisted
pair of 0.25 mm copper wire with
10 twists per cm, wound on a grade
4C6 toroidal core
4330 030 30031
4312 020 36640
length 9.5 mm;
int. dia. 5 mm;
leads 2 × 3 mm
dimensions
9 × 6 × 3 mm
4322 020 97171
Note
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2003 Jul 22
9
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
100
handbook, full pagewidth
mounting screw
90
strap
strap
L3
+VDD
+VG
C7
L1
C6
C8
R3
C3
L2
R1
T1
C5
L4
C2
C9
C1
R2
C4
MGP074
Dimensions in mm.
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth.
Earth connections are made by means of hollow rivets and straps at the two edges and under the source contacts.
Fig.14 Component layout for 28 MHz class-A test circuit.
2003 Jul 22
10
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
APPLICATION INFORMATION FOR CLASS-AB OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise specified.
RF performance in SSB operation in a common source circuit.
f1 = 28.000 MHz; f2 = 28.001 MHz.
PL
(W)
f
(MHz)
VDS
(V)
IDQ
(mA)
Gp
(dB)
ηD
(%)
d3
(dB)(1)
d5
(dB)(1)
RGS
(Ω)
30 (PEP)
28
50
150
typ. 24
typ. 40(2)
typ. −35
typ. −40
22
Notes
1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
power the values should be decreased by 6 dB.
2. 2-tone efficiency.
Ruggedness in class-AB operation
The BLF175 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases at PL = 30 W
single tone under the following conditions:
VDS = 50 V; f = 28 MHz.
MGP076
MGP077
28
60
handbook, halfpage
handbook, halfpage
Gp
(dB)
ηD
(%)
26
50
24
40
22
30
20
20
0
20
40
PL (W) PEP
60
0
20
40
PL (W) PEP
60
Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.15 Power gain as a function of load power;
typical values.
Fig.16 Two tone efficiency as a function of load
power; typical values.
2003 Jul 22
11
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
MGP078
MGP079
0
0
handbook, halfpage
handbook, halfpage
d3
(dB)
d5
(dB)
−20
−20
−40
−40
−60
0
20
40
PL (W) PEP
−60
60
0
20
40
PL (W) PEP
60
Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.17 Third order intermodulation distortion as a
function of load power; typical values.
Fig.18 Fifth order intermodulation distortion as a
function of load power; typical values.
C10
handbook, full pagewidth
C1
50 Ω
output
C2
,,
,,
,,
D.U.T.
C3
L1
C4
C7
L3
R1
C5
R2
50 Ω
output
C6
C8
L4
R3
L6
+VG
+VD
C9
C12
MGP080
f = 28 MHz.
Fig.19 Test circuit for class-AB operation.
2003 Jul 22
C11
L5
L2
12
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
List of components (class-AB test circuit)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
C1, C10
multilayer ceramic chip capacitor
(note 1)
62 pF
C2, C4, C8, C11
film dielectric trimmer
5 to 60 pF
C3
multilayer ceramic chip capacitor
(note 1)
51 pF
C5, C6, C9
multilayer ceramic chip capacitor
100 nF
C7
multilayer ceramic chip capacitor
(note 1)
10 pF
C12
aluminium electrolytic capacitor
10 µF, 63 V
L1
9 turns enamelled 1 mm copper wire 280 nH
L2, L3
stripline (note 2)
30 Ω
length 10 mm;
width 6 mm
L4
14 turns enamelled 1 mm copper
wire
1650 nH
length 20 mm;
int. dia. 12 mm;
leads 2 × 2 mm
L5
10 turns enamelled 1 mm copper
wire
380 nH
length 13 mm;
int. dia. 7 mm;
leads 2 × 3 mm
L6
grade 3B Ferroxcube wideband RF
choke
R1
0.4 W metal film resistor
22 Ω
R2
0.4 W metal film resistor
1 MΩ
R3
0.4 W metal film resistor
10 Ω
CATALOGUE NO.
2222 809 07011
2222 852 47104
2222 030 28109
length 11 mm;
int. dia. 6 mm;
leads 2 × 4 mm
4312 020 36640
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 4.5),
thickness 1.6 mm.
2003 Jul 22
13
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
150
handbook, full pagewidth
mounting screw
strap
strap
strap
rivet
70
R3
C9
R2
L6
C6
C5
L1
C2
L4
R1
L5
L2
C1
C12
L3
C3
C10
C7
C8
C4
C11
MGP081
Dimensions in mm.
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth.
Earth connections are made by means of hollow rivets and straps at the two edges and under the source contacts.
Fig.20 Component layout for 28 MHz class-AB test circuit.
2003 Jul 22
14
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
MGP084
MGP083
30
50
handbook, halfpage
handbook, halfpage
Zi
(Ω)
ZL
(Ω)
20
40
ri
10
RL
30
0
20
xi
−10
10
−20
XL
0
0
10
20
30
f (MHz)
40
0
10
20
f (MHz)
30
Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
PL = 30 W (PEP); RGS = 22 Ω.
Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
PL = 30 W (PEP); RGS = 22 Ω.
Fig.21 Input impedance as a function of frequency
(series components); typical values.
Fig.22 Load impedance as a function of frequency
(series components); typical values.
MGP085
30
handbook, halfpage
Gp
(dB)
20
10
0
0
10
20
f (MHz)
30
Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
PL = 30 W (PEP); RGS = 22 Ω.
Fig.23 Power gain as a function of frequency;
typical values.
2003 Jul 22
15
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
APPLICATION INFORMATION FOR CLASS-B OPERATION
RF performance in SSB operation in a common source circuit.
MODE OF
OPERATION
CW, class-B
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
RGS
(Ω)
108
50
30
30
typ. 20
typ. 65
10
MGP086
10
MGP087
50
ZL
handbook, halfpage
handbook, halfpage
Zi
(Ω)
(Ω)
40
5
ri
30
XL
20
RL
0
10
xi
−5
0
100
f (MHz)
0
200
0
100
f (MHz)
200
Class-B operation; VDS = 50 V; IDQ = 30 mA;
PL = 30 W; RGS = 10 Ω.
Class-B operation; VDS = 50 V; IDQ = 30 mA;
PL = 30 W; RGS = 10 Ω.
Fig.24 Input impedance as a function of frequency
(series components); typical values.
Fig.25 Load impedance as a function of frequency
(series components); typical values.
2003 Jul 22
16
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
MGP088
30
handbook, halfpage
Gp
(dB)
20
10
0
0
100
f (MHz)
200
Class-B operation; VDS = 50 V; IDQ = 30 mA;
PL = 30 W; RGS = 10 Ω.
Fig.26 Power gain as a function of frequency;
typical values.
2003 Jul 22
17
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
BLF175 scattering parameters
VDS = 50 V; ID = 100 mA; note 1.
s11
f (MHz)
s21
s12
s22
|s11|
∠Φ
|s21|
∠Φ
|s12|
∠Φ
|s22|
∠Φ
5
0.86
−110.20
36.90
114.20
0.02
25.20
0.64
−84.90
10
0.83
−139.40
20.39
93.30
0.02
5.10
0.55
−112.00
20
0.85
−155.70
9.82
72.60
0.02
−13.40
0.60
−129.30
30
0.88
−161.50
5.96
59.30
0.02
−24.70
0.69
−138.00
40
0.90
−164.90
3.98
49.30
0.02
−31.70
0.76
−144.30
50
0.92
−167.10
2.83
41.90
0.01
−35.80
0.82
−149.30
60
0.94
−169.00
2.11
36.00
0.01
−36.80
0.86
−153.50
70
0.96
−170.70
1.63
31.20
0.01
−33.70
0.89
−157.00
80
0.96
−172.20
1.29
27.40
0.00
−23.00
0.91
−159.90
90
0.97
−173.40
1.04
24.20
0.00
3.30
0.92
−162.40
100
0.97
−174.30
0.86
21.70
0.00
42.50
0.94
−164.50
125
0.99
−176.50
0.57
16.40
0.01
81.60
0.95
−168.80
150
0.99
−178.10
0.40
13.40
0.01
88.70
0.97
−171.90
175
0.99
−179.80
0.30
11.60
0.02
90.70
0.98
−174.50
200
1.00
179.20
0.23
11.00
0.02
90.80
0.98
−176.70
250
1.00
177.00
0.15
11.70
0.03
90.50
0.99
179.80
300
1.00
175.10
0.11
16.70
0.03
89.60
0.99
176.90
350
0.99
173.30
0.08
24.10
0.04
88.30
0.99
174.30
400
1.00
171.80
0.07
33.10
0.05
88.00
0.99
171.90
450
0.99
170.10
0.07
42.70
0.05
87.80
0.99
169.60
500
0.99
168.50
0.07
51.90
0.06
86.50
0.99
167.40
600
0.99
165.40
0.07
64.20
0.07
84.90
0.99
163.10
700
0.99
162.30
0.09
70.60
0.09
83.10
0.98
158.90
800
0.99
158.90
0.10
73.80
0.10
82.20
0.98
154.80
900
0.99
155.30
0.12
74.90
0.12
80.70
0.97
150.60
1000
0.98
151.80
0.14
76.40
0.14
79.80
0.97
146.20
Note
1. For more extensive s-parameters see internet website:
http://www.semiconductors.philips.com.markets/communications/wirelesscommunicationms/broadcast
2003 Jul 22
18
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT123A
D
A
F
D1
q
C
B
U1
w2 M C M
c
H
b
4
3
α
A
U2
p
U3
w1 M A M B M
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
F
H
p
Q
q
U1
U2
U3
w1
w2
mm
7.47
6.37
5.82
5.56
0.18
0.10
9.73
9.47
9.78
9.42
2.72
2.31
20.71
19.93
3.33
3.04
4.63
4.11
18.42
24.87
24.64
6.48
6.22
9.78
9.39
0.25
0.51
inches
0.294
0.251
0.229 0.007
0.219 0.004
0.383 0.385 0.107 0.815
0.373 0.371 0.091 0.785
0.131
0.120
0.182
0.980
0.725
0.162
0.970
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
45°
ISSUE DATE
99-03-29
SOT123A
2003 Jul 22
0.255 0.385
0.010 0.020
0.245 0.370
α
19
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Jul 22
20
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
SCA75
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/03/pp21
Date of release: 2003
Jul 22
Document order number:
9397 750 11582
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