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PTVA104501EH-V1-R0

PTVA104501EH-V1-R0

  • 厂商:

    WOLFSPEED

  • 封装:

    H-33288-2

  • 描述:

    IC AMP RF LDMOS H-33288-2

  • 数据手册
  • 价格&库存
PTVA104501EH-V1-R0 数据手册
PTVA104501EH Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz Description The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Power Sweep, Pulsed RF Features VDD = 50 V, IDQ = 200 mA, TCASE = 25°C, 128 µs pulse width, 10% duty cycle • Integrated ESD protection 55 45 45 35 35 960 MHz 1030 Mhz 1090 MHz 25 15 25 1150 MHz 1215 MHz a104501eh_g1 28 30 32 34 • High gain and efficiency 65 Output power Efficiency 55 POUT (dBm) • Broadband internal input and output matching 36 38 PIN (dBm) 40 42 Efficiency (%) 65 PTVA104501EH Package H-33288-2 44 • Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001) • Low thermal resistance • Excellent ruggedness • Pb-free and RoHS compliant • Capable of withstanding a 10:1 load mismatch (all phase angles) at 450 W peak under RF pulse, 128 µS, 10% duty cycle. 15 RF Characteristics Pulsed RF Performance (tested in Wolfspeed test fixture) VDD = 50 V, IDQ = 200 mA, POUT = 450 W (peak), ƒ1 = 960 MHz, ƒ2 = 1090 MHz, ƒ3 = 1215 MHz, RF pulse 128 µs, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 17.5 — dB Drain Efficiency hD 53 58 — % Gain Flatness DG — 0.85 1.8 dB Return Loss IRL — –9.5 –6 dB All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Rev. 03, 2018-06-14 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA104501EH 2 RF Characteristics Typical RF Performance (not subject to production test, verified by design/characterization in Wolfspeed test fixture) VDD = 50 V, IDQ = 200 mA, Input signal (tr = 7.0 ns, tf = 7.0 ns), 128 µs pulse width, 10% duty cycle, class AB test Mode of Operation 128 µs, 10% ƒ (MHz) IRL (dB) P1dB Gain (dB) Eff (%) P3dB POUT (W) Gain (dB) Eff (%) POUT (W) Max Pdroop (pulse) @ P1dB tr (ns) @P1dB tf (ns) @P1dB 960 –7.5 18.0 56 460 16.0 53 490 0.15 5
PTVA104501EH-V1-R0 价格&库存

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