CGHV22200
200 W, 1800-2200 MHz, GaN HEMT for LTE
Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
is designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV22200F ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BWA
amplifier applications. The transistor is input matched and supplied in a ceramic/
metal flange package.
Package Type
: 440162 and
440161
PN: CGHV222
00F and CGH
V22200P
Typical Performance Over 1.8 - 2.2 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.8 GHz
2.0 GHz
2.2 GHz
Units
Gain @ 47 dBm
16.6
19.2
18.1
dB
ACLR @ 47 dBm
-37.4
-37.4
-35.6
dBc
Drain Efficiency @ 47 dBm
31.5
31.9
34.8
%
Note:
Measured in the CGHV22200-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF. IDS = 1.0 A
Features
1.8 - 2.2 GHz Operation
•
18 dB Gain
•
-35 dBc ACLR at 50 W PAVE
•
31-35 % Efficiency at 50 W PAVE
•
High Degree of DPD Correction Can be Applied
2018
Rev 2.1 – April
•
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
VDSS
125
Volts
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature3
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
32
mA
25˚C
Maximum Drain Current
IDMAX
12
A
25˚C
Soldering Temperature2
TS
245
˚C
1
τ
80
in-oz
3
Thermal Resistance, Junction to Case
RθJC
1.22
˚C/W
85˚C, PDISS = 96 W
Thermal Resistance, Junction to Case4
RθJC
1.54
˚C/W
85˚C, PDISS = 96 W
TC
-40, +150
˚C
Screw Torque
Case Operating Temperature5
Note:
Current limit for long term, reliable operation.
2
Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3
Measured for the CGHV22200P
4
Measured for the CGHV22200F
5
See also, the Power Dissipation De-rating Curve on Page 6.
1
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 32 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 50 V, ID = 1.0 A
Saturated Drain Current2
IDS
24
28.8
–
A
Drain-Source Breakdown Voltage
VBR
150
–
–
VDC
VGS = -8 V, ID = 32 mA
DC Characteristics1
VDS = 6.0 V, VGS = 2.0 V
RF Characteristics3 (TC = 25˚C, F0 = 2.17 GHz unless otherwise noted)
Saturated Output Power3,4
PSAT
–
240
–
W
VDD = 50 V, IDQ = 1.0 A
Pulsed Drain Efficiency3
η
–
65
–
%
VDD = 50 V, IDQ = 1.0 A, POUT = PSAT
Gain
G
–
18.0
–
dB
VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm
ACLR
–
-36.7
–
dBc
VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm
η
–
34.5
–
%
VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm
VSWR
–
–
10 : 1
Y
No damage at all phase angles, VDD = 50 V, IDQ
= 1.0 A, POUT = 200 W Pulsed
Input Capacitance7
CGS
–
97
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance7
CDS
–
13.4
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.94
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
6
WCDMA Linearity6
Drain Efficiency6
Output Mismatch Stress3
Dynamic Characteristics
Notes:
1
Measured on wafer prior to packaging.
2
Scaled from PCM data.
3
Pulse Width = 100 µS, Duty Cycle = 10%
4
PSAT is defined as IG = 3 mA peak.
5
Measured in CGHV22200-AMP
6
Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
7
Includes package and internal matching components.
Copyright © 2012-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGHV22200 Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 1. - Small
Signal
ReturnLosses
Losses
Frequency
Small
SignalGain
Gain and
and Return
vs. vs
Frequency
for for the
CGHV22200
measured
in
CGHV22200-AMP
Amplifier
Circuit
CGHV22200F measured in CGV22200F-TB Amplifier Circuit
V, =
IDQ=1.0
VDD =VDD
50=V,50IDQ
1.0 A A
25
20
15
Magnitude (dB)
10
5
0
-5
-10
-15
S11
-20
S21
S22
-25
1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800
Frequency (MHz)
Figure 2. - Typical Gain and Drain Efficiency vs Input Power
Figure 2. - Typical Pulsed Measurements vs Input Power
of the ofCGHV22200
measured
in CGHV22200-AMP
Amplifier Circuit.
the CGHV22200 measured
in CGHV22200-TB
Amplifier Circuit.
= 50 V, =
IDQ
= 1.0GHz,
A, FreqPulse
= 2.1 GHz,
VDS = 50 V, IDQ = 1.0 VDS
A, Freq
2.1
Width = 100 µs, Duty Cycle = 10 %
Pulse Width = 100 μs, Duty Cycle= 10 %
350
70
Pout
Gain
Drain
Efficiency
EFF
Output Power (W)
250
60
50
Pout
200
40
150
30
Gain
100
20
50
10
0
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
Gain (dB) & Drain Efficiency (%)
300
0
Input Power (dBm)
Copyright © 2012-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGHV22200 Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
-10
Figure 3. - Typical WCDMA Transfer Characteristics
Characteristics
VDD = 50 V, IDS WCDMA
= 1.0 A,Transfer
1c WCDMA,
PAR = 7.5 dB
3GPP 64DPCHC 7.5 PAR
40
ACLR 1.8 GHz
ACLR 2.0 GHz
-15
35
ACLR 2.2 GHz
Gain 1.8 GHz
Gain 2.0 GHz
-20
30
Gain 2.2 GHz
EFF 2.0 GHz
ACLR (dBc)
25
EFF 2.2 GHz
-30
20
-35
15
-40
10
-45
5
-50
30
31
32
33
34
Gain (dB) & Drain Efficiency (%)
EFF 1.8 GHz
-25
35
36
37
38
39
40
41
42
43
44
45
46
47
0
Output Power (dBm)
Figure 4. - Typical Gain, Drain Efficiency and ACLR vs Frequency
of the CGHV22200 measured in CGHV22200-AMP Amplifier Circuit
Linearity at Pave = 47 dBm over Frequency
1.0 A,
P = 50
= V,
50Idq
W,=1c
WCDMA, PAR = 7.5 dB
VDD = 50 V, IDS = CGHV22200
VddAVE
1 A, 1c WCDMA 7.5 dB PAR
40
-20
35
Drain Efficiency
-25
Gain
25
Drain Efficiency
ACLR
20
Gain
-30
15
10
-35
ACLR
5
0
1.8
1.9
2.0
Frequency (GHz)
2.1
Copyright © 2012-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
ACLR (dBc)
Gain (dB) & Drain Efficiency (%)
30
CGHV22200 Rev 2.1
2.2
-40
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Spectral Mask at Pave = 47 dBm with and without DPD
Figure CGHV22200F
5. - CGHV22200
Spectral Mask at P = 47 dBm with and without DPD
Vdd=50, Idq=1 A, Freq=2.14 GHz,AVE
1 C WCDMA 7.5 PAR
VDD=50, IDQ=1.0 A, Freq=2.14 GHz, 1 C WCDMA 7.5 PAR
0
-10
-20
-30
Uncorrected
-40
Corrected
-50
-60
-70
-80
2.125
2.13
2.135
2.14
2.145
2.15
2.155
Frequency (GHz)
Figure 6. - CGHV22200
Typical
Linearity
under
DPDPower
vs. Output Power
Typical Linerity
under
DPD vs.
Output
50V,
1.0A,
2.14
GHz,
1ch
WCDMA
7.5
PAR
VDD=50, IDQ=1.0 A, Freq=2.14 GHz, 1 C WCDMA 7.5 PAR
35
5
Efficiency
Gain_UNCORR
30
-5
Gain_CORR
EFF_CORR
ACP_UNCORR
25
-15
ACP_CORR
20
-25
Gain
15
-35
ACP Uncorrected
10
-45
ACP Corrected
5
0
Adjacent Channel Power (dBc)
Gain (dB) & Drain Efficiency (%)
EFF_UNCORR
-55
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
-65
Average Output Power (dBm)
Copyright © 2012-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGHV22200 Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
FigureCGHV22200
7. - Intermodulation
Distortion
Output
Power
Intermodulation
DistortionProducts
Products vsvs
Output
Power
Freq. = 2.1
VDD
= 50
V,V,IDQ
A, Tone
Spacing
= 100 kHz.
Freq.GHz,
2.1 Ghz
, Vdd
= 50
Idq =
= 11.0
A, Tone
Spacing
= 100 kHz
0
-IMD3
-10
+IMD3
Intermodulation Distortion (dBc)
-IMD5
+IMD5
-20
-IMD7
+IMD7
-30
-40
-50
-60
-70
-80
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Output Power (dBm)
Figure 8. - Power Dissipation Derating Curve
100
90
440161 Package
80
440162 Package
Power Dissipation (W)
70
60
Note 1
50
40
30
20
10
0
0
25
50
75
100
125
150
Maximum Case Temperature ( C)
175
200
225
250
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Copyright © 2012-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGHV22200 Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
1800
10.6 - j7.3
2.7 + j0.6
1900
8.1 - j7.4
2.8 + j0.7
2000
6.1 - j6.6
2.9 + j0.8
2100
4.7 - j5.5
2.8 + j0.8
2200
3.7 - j4.3
2.6 + j0.8
Note1: VDD = 50 V, IDQ = 1.0 A. In the 440162 package.
Note2: Impedances are extracted from CGHV22200-AMP demonstration
circuit and are not source and load pull data derived from transistor.
Copyright © 2012-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGHV22200 Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV22200-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 1/16 W, 0603, 1%, 10.0 OHMS
1
R2
RES, 1/16 W, 0603, 1%, 5.1 OHMS
1
C4, C14, C24
CAP, 470 pF, 5%, 100 V, 0603, X
3
C6,C16, C26
CAP, 1.0 UF, 100 V, 10%, x7R, 121
3
C17, C27
C7
C1, C2, C3, C13, C23
CAP, 100 UF, 20%, 160 V, ELEC
2
CAP, 10 UF, 16 V, TANTALUM, 2312
1
CAP, 10.0 pF, 5%, 0603, ATC
5
CAP, 33000 pF, 0805, 100 V, X7R
3
CAP, 10 pF, 5%, 250 V, 0805, A
1
J1, J2
CONN, N, FEM, W/.500 SMA FLNG
2
J3
HEADER RT>PLZ .1CEN LK 9POS
1
PCB, CGHV22200F, RO4350,0.020” THK
1
2-56 SOC HD SCREW 1/4 SS
4
#2 SPLIT LOCKWASHER SS
4
CGHV22200
1
C5, C15, C25
C11
Copyright © 2012-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGHV22200 Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV22200-AMP Demonstration Amplifier Circuit Schematic
CGHV22200-AMP Demonstration Amplifier Circuit Outline
Copyright © 2012-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGHV22200 Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGHV22200F (Package Type — 440162)
Product Dimensions CGHV22200P (Package Type —
440161)
Copyright © 2012-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGHV22200 Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Part Number System
CGHV22200F
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Upper Frequency
1
Power Output
Package
Value
Units
2.2
GHz
200
W
Flange
-
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2012-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGHV22200 Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGHV22200F
GaN HEMT
Each
CGHV22200P
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGHV22200-TB
CGHV22200F-AMP
Copyright © 2012-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CGHV22200 Rev 2.1
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2012-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
13
CGHV22200 Rev 2.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
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