CGHV40200PP

CGHV40200PP 200 W, 50 V, GaN HEMT Description Cree’s CGHV40200PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40200PP, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40200PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package. Package Type: 440199 PN: CGHV40200PP Typical Performance Over 1.7-1.9 GHz (TC = 25˚C), CW Parameter 1.7 GHz 1.8 GHz 1.9 GHz Units Small Signal Gain 21.7 21.0 20.1 dB Gain @ PIN = 38 dBm 16.5 16.1 15.4 dB POUT @ PIN = 38 dBm 270 250 218 W Drain Efficiency @ PIN = 38 dBm 64 67 65 % Features Applications • • • • • • • • • • Up to 3.0 GHz Operation 21 dB Small Signal Gain at 1.8 GHz 250 W typical PSAT 67% Efficiency at PSAT 50 V Operation 2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Large Signal Models Available for ADS and MWO Rev 1.4 – November 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV40200PP 2 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 150 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 41.6 mA 25˚C Maximum Drain Current IDMAX 8.7 A 25˚C Soldering Temperature TS 245 ˚C τ 40 in-oz Thermal Resistance, Junction to Case RθJC 0.94 ˚C/W Case Operating Temperature TC -40, +70 ˚C 1 1 2 Screw Torque 3 3,4 85˚C Notes: 1 Current limit for long term, reliable operation per side of the device 2 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library 3 CGHV40200PP at PDISS = 166 W 4 See also, the Power Dissipation De-rating Curve on Page Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 41.6 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 2.0 A Saturated Drain Current2 IDS 27.0 38.7 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 125 – – VDC VGS = -8 V, ID = 41.6 mA RF Characteristics3,4 (TC = 25˚C, F0 = 1.8 GHz unless otherwise noted) Small Signal Gain GSS 17.75 20.0 – dB VDD = 50 V, IDQ = 1.2 A, PIN = 10 dBm Power Gain PG 15.05 16.0 - dB VDD = 50 V, IDQ = 1.2 A, PIN = 38 dBm Power Output POUT 200 250 – W VDD = 50 V, IDQ = 1.2 A, PIN = 38 dBm Drain Efficiency5 η 60 69 – % VDD = 50 V, IDQ = 1.2 A, PIN = 38 dBm VSWR – – 3:1 Y No damage at all phase angles, VDD = 50 V, IDQ = 1.2 A, POUT = 200 W CW Input Capacitance CGS – 29.3 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 7.3 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.61 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Mismatch Stress Dynamic Characteristics6 Notes: 1 Measured on wafer prior to packaging per side of device 2 Scaled from PCM data 3 Measured in CGHV40200PP-TB 4 IDQ of 1.2 A is by biasing each device at 0.6 A 5 Drain Efficiency = POUT / PDC 6 Capacitance values are for each side of the device Rev 1.4 – November 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV40200PP 3 Typical Performance Figure 1. Gain and Return Losses vs Frequency measured in CGHV40200PP-TB Small Signal Gain and Return Loss vs. Frequency VDD = 50 V, IDQ = 1.2 A, Freq = 1500 - 2000 MHz CGHV40200PP VDD = 50V, IDQ=2*0.60A 30 Gain, Return Loss (dB) Gain and Return Losses (dB) 25 20 15 10 5 0 -5 S21 -10 S11 -15 S22 -20 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 Frequency (GHz) Frequency (MHz) 100 270 90 240 80 210 70 180 60 150 50 120 40 Pout 90 EFF 60 20 10 30 0 1.70 30 Drain Efficiency(%) 300 Drain Efficiency (%) Pout (Watts) Pout (Watts) Figure 2. Output Power and Drain Efficiency vs Frequency measured in CGHV40200PP-TB CW Operation, VDD = 50 V, IDQ = 1.2 A, Output Power @ PIN = 38 dBm 1.73 1.75 1.78 1.80 Frequency (GHz) 1.83 1.85 1.88 0 1.90 Frequency (GHz) Rev 1.4 – November 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV40200PP 4 Typical Performance Figure 3. Gain and Drain Efficiency vs Output Power measured in CGHV40200PP-TB CW Operation, VDD = 50 V, IDQ = 1.2 A 100 90 20 80 17.5 70 15 60 12.5 50 10 Drain Efficiency (%) 22.5 Drain Efficiency (%) Gain (dB) Gain (dB) 25 40 1.70 Gain 7.5 30 1.80 Gain 1.90 Gain 5 20 1.70 EFF 1.80 EFF 2.5 0 10 1.90 EFF 35 37 39 41 43 45 47 49 Output Power (dBm) Output Power (dBm) 51 53 55 0 Figure 4. Simulated Maximum Avaliable Gain of the CGHV40200PP Simulated Maximum Avaliable Gain and and K-factorK-factor of the CGHV40200PP VDD = 50V, IDQ=2*0.60A VDD = 50 V, IDQ = 1.2 A 5 50 Gmax 45 K 40 4 3 K-factor 30 25 2 20 K-factor MAG (dB) MAG (dB) 35 15 10 1 5 0 0 1 2 3 Frequency (GHz) 4 5 6 0 Frequency (GHz) Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Rev 1.4 – November 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV40200PP 5 CGHV40200PP-AMP1 Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1,2 RES,1/4W,1206 1%, 0 OHM 2 R5, R6, R7,R11, R12, R13 RES, 1/16W, 0603, 1%, 5.1 Ohms 6 R3, R4, R9, R10 RES 5.1 OHM 1/8W 5% 0805 SMD 4 R15, R16, R17, R18 RES SMD 10 OHM 1% 2W 2512 4 R8,14 RES SMD 150 OHM 5% 1W 2512 2 C48,49 CAP, 0.1PF, +/- 0.05pF, 0805, ATC, 600F 2 C16 CAP, 0.8pF, +/-0.05pF, 0805, ATC 1 C27 CAP, 1.2pF, +/-0.1pF, 0603, ATC 1 C24 CAP, 1.2pF, +/-0.1pF, 0805, ATC 1 C15 CAP, 1.0pF, +/-0.1pF, 0603, ATC 1 C26 CAP, 1.5pF,+/-0.1pF, 0603, ATC 1 C25 CAP, 2.0pF, +/-0.1pF, 0805, ATC 1 C17 CAP, 3.9pF,+/-0.25pF, 0805, ATC 1 C28,29,36,37, 42, 46 CAP, 5.1pF, +/-0.05pF, 0805, ATC600F 4 C5,6,38,39 CAP, 5.6 PF +/- 0.1 pF, 0805, ATC 600F 4 C4,7,31,35 CAP, 20PF ±5% 250V 0805, ATC600F 4 C32,33,44,47 CAP, 100 PF +/- 5%, 250V, 0805, ATC 600F 4 C2,3,8,9,13,18,30, 34,40,41, 43, 45 CAP, 1000PF, +/-10%, 0805, X7R, 100V, TEMP STBL 12 C1,11,14,19,22,23, CAP, 10000PF, +/-10%, 0805, X7R, 100V, TEMP STBL 6 C21 CAP, 0.1uF, +/-10%, 250V, 1206, X7R 1 C10,12 CAP CER 10UF 25V X7R 1206 2 C20 CAP, 330 UF, +/-20%, 100V, ELECTROLYTIC, CASE SIZE K16 1 L6,7, 9,10,12, 13 IND, 12NH, 2%, 0908SQ-12NGL 6 L2, 3 IND, 27NH, 2%, 0908SQ-27NGL 2 L11 CABLE ,18 AWG, 4.2” 1 L1,4 FERRITE BEAD 600 OHM 0603 1LN 2 L5,8 FERRITE BEAD 72 OHM 1806 1LN 2 J2,3 CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST 2 J1 HEADER RT>PLZ .1CEN LK 9POS 1 J4,5 CONN SMA JACK STR 50 OHM SMD 2 PCB, Rogers 6035HTC 0.020” THK, CGHV40200PP 1.35-1.85 GHz 1 BASEPLATE, AL, 4.80 X 3.60 X 0.49, ALTERNATE HOLE PATTERN 1 2-56 SOC HD SCREW 1/4 SS 4 #2 SPLIT LOCKWASHER SS 4 CGHV40200PPP 1 Rev 1.4 – November 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV40200PP 6 CGHV40200F Typical Performance Figure 5. Small Signal Gain and Return Losses vs Frequency measured in the CGHV40200PP-AMP1 Broadband Amplifier Circuit VDD = 50 V, IDQ = 1.2 A 30 20 S21, S11, S22 (dB) 10 0 -10 -20 S11 S22 -30 -40 S21 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 Frequency (GHz) 350 100 300 85 250 70 200 55 Fix. 2 pout 150 40 Fix. 2 Gain Fix. 2 Eff 100 25 50 0 1.30 Gain (dB) Output Power (dBm), Drain Efficiency (%) Figure 6. Saturated Output Power Gain, and Drain Efficiency vs Frequency of the CGHV40200PP measured in the CGHV40200PP-AMP1 Broadband Amplifier Circuit VDD = 50V, IDQ = 1 A, CW, PSAT, IG = 0 mA 10 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 -5 1.90 Frequency (GHz) Rev 1.4 – November 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV40200PP 7 CGHV40200PP-AMP1 Demonstration Amplifier Circuit Schematic CGHV40200PP-AMP1 Demonstration Amplifier Circuit Outline Rev 1.4 – November 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV40200PP 8 Simulated Source and Load Impedances D1 Frequency (MHz) Z Source (1,2) Z Load (1,2) Z Source 1 Z Load 1 G1 S 500 2.9 +j4.8 12.8 +j7.3 1000 0.8 +j1.5 9.1 +j5.1 1500 0.9 +-j0.6 5.5 +j3.8 2000 1.1 -j2.2 4.4 +j2.0 2500 1.8 -j4.0 3.8 +j0.5 Note 1. VDD = 50 V, IDQ = 2 x 0.6 A in the 440199 package Note 2. Optimized for power gain, PSAT and PAE Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability G2 Z Source 2 Z Load 2 D2 Power Dissipation (W) CGHV40200PP Power Dissipation De-rating Curve Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2) Rev 1.4 – November 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV40200PP 9 Product Dimensions CGHV40200PP (Package Type 440199) Rev 1.4 – November 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV40200PP 10 Part Number System CGHV40200PP Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Table 1. Parameter Value Units Upper Frequency1 2.5 GHz Power Output 200 W Package Push Pill - Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value Table 2. Rev 1.4 – November 2021 Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV40200PP 11 Product Ordering Information Order Number Description Unit of Measure CGHV40200PP GaN HEMT Each CGHV40200PP-AMP1 Test board with GaN HEMT installed Each Rev 1.4 – November 2021 Image 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV40200PP 12 For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. © 2017 - 2020 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev 1.4 – November 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com