CGHV27030S
30 W, DC - 6.0 GHz, GaN HEMT
Description
The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The
CGHV27030S GaN HEMT devices are ideal for telecommunications applications with
frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 33003700 MHz at both 50 V and 28 V operations. The CGHV27030S is also ideal for tactical
communications applications operating from 20-2500 MHz, including land mobile radios.
Additional applications include L-Band RADAR and S-Band RADAR. The CGHV27030S can
operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm, surface
mount, dual-flat-no-lead (DFN) package.
Package Type: 3x4 DFN
PN: CGHV27030S
Typical Performance 2.5-2.7 GHz (TC = 25˚C) , 50 V
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Units
Small Signal Gain
22.5
22.0
21.4
dB
Adjacent Channel Power @ PAVE =5 W
-34.5
-35.0
-34.0
dBc
Drain Efficiency @ PAVE = 5 W
28.5
29.5
30.0
%
Input Return Loss
8.5
14
14
dB
Note: Measured in the CGHV27030S-AMP1 application circuit, under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH
Features for 50 V in CGHV27030S-AMP1
• 2.5 - 2.7 GHz Operation
•
• 30 W Typical Output Power
•
• 20 dB Gain at 5 W PAVE
•
-34 dBc ACLR at 5 W PAVE
30% efficiency at 5 W PAVE
High degree of APD and DPD correction can be applied
Listing of Available Hardware Application Circuits / Demonstration Circuits
Application Circuit
Operating Frequency
Amplifier Class
Operating Voltage
CGHV27030S-AMP1
2.5 - 2.7 GHz
Class A/B
50 V
CGHV27030S-AMP2
2.5 - 2.7 GHz
Class A/B
28 V
CGHV27030S-AMP3
1.8 - 2.2 GHz
Class A/B
28 V
CGHV27030S-AMP4
1.8 - 2.2 GHz
Class A/B
50 V
CGHV27030S-AMP5
1.2 - 1.4 GHz
Class A/B
50 V
Large Signal Models Available for ADS and MWO
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
2
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Notes
Drain-Source Voltage
VDSS
150
Volts
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
4
mA
25˚C
Maximum Drain Current1
IDMAX
1.5
A
25˚C
TS
245
˚C
Case Operating Temperature
TC
-40, +150
˚C
Thermal Resistance, Junction to Case4
RθJC
6.18
˚C/W
Soldering Temperature2
3
Notes:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at
wolfspeed.com/rf/document-library
3
TC = Case temperature for the device. It refers to the temperature at
the ground tab underneath the package. The PCB will add additional
thermal resistance
4
85˚C
Measured for the CGHV27030S at PDISS = 12 W
The RTH for Cree’s demonstration amplifier, CGHV27030S-AMP1, with
33 x 0.011 via holes designed on a 20 mil thick Rogers 4350 PCB, is
3.9°C. The total RTH from the heat sink to the junction is 6.18°C + 3.9°C =
10.08°C/W
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 4 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 50 V, ID = 0.13 mA
Saturated Drain Current
IDS
2.6
3.7
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
V(BR)DSS
125
–
–
VDC
VGS = -8 V, ID = 4 mA
DC Characteristics1
RF Characteristics3 (TC = 25˚C, F0 = 2.65 GHz unless otherwise noted)
Gain
G
20
23
-
dB
VDD = 50 V, IDQ = 0.13 A, PIN = 10 dBm
POUT
44.5
45
–
dBm
VDD = 50 V, IDQ = 0.13 A, PIN = 28 dBm
η
64
73
-
%
VDD = 50 V, IDQ = 0.13 A, PIN = 28 dBm
VSWR
-
10 : 1
-
Y
No damage at all phase angles,
VDD = 50 V, IDQ = 0.13 A, PIN = 28 dBm
Input Capacitance5
CGS
–
5.38
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance5
CDS
–
1.18
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.12
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Power
4
Drain Efficiency
4
Output Mismatch Stress4
Dynamic Characteristics
Notes:
1
Measured on wafer prior to packaging
2
Scaled from PCM data
3
Measured in Cree’s production test fixture. This fixture is designed for high volume test at 2.65 GHz
4
Un-modulated Pulsed Signal 100 μs, 10% duty cycle
5
Includes package parasitics
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
3
Typical Performance in Application Circuit CGHV27030S-AMP1
Figure 1. Small Signal Gain and Return Losses vs Frequency
Figure 1. - Small
Signal
Gain
Return Losse vs Frequency
VDD
= 50V,
IDQand
= 0.13A
VDD = 50V, IDQ = 0.13A
30
20
Input and Output Return Loss
Gain (dB)
Gain (dB)
Input and Output
Return Loss
25
15
10
5
0
-5
-10
S11
-15
S21
-20
S22
-25
2200
2300
2400
2500
2600
2700
2800
Frequency (MHz)
2900
3000
3100
3200
Frequency (MHz)
Figure 2. Typical Drain Efficiency and ACLR vs. Output Power
and
ACLR
vs. dB
Output Power
VDD Figure
= 50 V,2.I-DQTypical
= 0.13Drain
A, 1cEfficiency
WCDMA,
PAR
= 7.5
VDD = 50 V, IDQ = 0.13 A, 1c WCDMA, PA = 7.5dB
0
-5
45
40
ACLR_2p5
ACLR_2p6
-15
ACLR_2p7
35
EFF_2p5
EFF_2p6
30
EFF_2p7
-20
25
Efficiency
-25
20
-30
15
-35
10
ACLR
-40
-45
Efficiency (%)
Efficiency
(%)
ACLR ACLR
(dBC)(dBC)
-10
5
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
0
Pout
(dBm)
Pout
(dBm)
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
4
Typical Performance in Application Circuit CGHV27030S-AMP1
Figure 3. Typical Gain, Drain Efficiency and ACLR vs Frequency
VDD = 50 VFigure
, IDQ =3.0.13
A, Gain,
PAVE =Drain
5 W,Efficiency
1c WCDMA,
PARvs=Frequency
7.5 dB
- Typical
and ACLR
-20.0
35
-22.5
Drain Efficiency
30
-25.0
25
-27.5
Gain
20
-30.0
15
-32.5
10
Gain
ACLR
EFF
5
(dBc)
ACLRACLR
(dBc)
Gain (dB) & Drain Efficiency (%)
Gain (dB) & Drain Efficiency (%)
VDD = 50 V, IDQ = 0.13 A, PAVE = 5 W, 1c WCDMA, PAR = 7.5 dB
40
-35.0
-37.5
ACLR
0
2.45
2.50
2.55
2.60
Frequency (GHz)
2.65
2.70
-40.0
2.75
Frequency (GHz)
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
5
Source and Load Impedances for Application Circuit CGHV27030S-AMP1
D
Z Source
Z Load
G
Frequency (MHz) Z Source
Z Load
2500
5.69 + j7.82
10.9 + j15.7
2600
2.8 - j1.1
11.5 + j16.7
2700
2.5 - j1.7
12.1 + j17.7
Note 1: VDD = 50 V, IDQ = 0.13 A in the DFN package
Note 2: Impedances are extracted from the CGHV27030S-AMP1 application
circuit and are not source and load pull data derived from the transistor
S
CGHV27030S-AMP1 Bill of Materials
Designator
Description
Qty
R1, R2
RES, 22.6, OHM, +/-1%, 1/16W, 0603
2
C1
CAP, 3.3 pF, ±0.1 pF, 0603, ATC
1
C2
CAP, 1.1 pF, ±0.05 pF, 0603, ATC
1
C3, C4
CAP, 0.7 pF, ±0.05 pF, 0603, ATC
3
C5, C11, C15
CAP, 8.2 pF, ±0.25 pF, 0603, ATC
3
C6, C16
CAP, 470 pF, 5%, 100 V, 0603
2
C7, C17
CAP, 33000 pF, 0805, 100 V, 0603, X7R
2
C18
CAP, 1.0 UF, 100 V, 10%, X7R, 1210
1
C8
CAP, 10 UF 16 V TANTALUM
1
C19
CAP, 33 UF, 20%, G CASE
1
J1, J2
CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST
2
J3
HEADER RT>PLZ .1CEN LK 5 POS
1
PCB
PCB, ROGERS 4350, ER 3.66
1
Q1
CGHV27030S, QFN
1
CGHV27030S -AMP1 Application Circuit
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
6
CGHV27030S-AMP1 Application Circuit Schematic, 50 V
CGHV27030S-AMP1 Application Circuit Outline, 50 V
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
7
Electrical Characteristics When Tested in CGHV27030S-AMP2, 28 V, 2.5 - 2.7 GHz
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Units
Small Signal Gain
15.5
15.7
16.0
dB
Adjacent Channel Power @ PAVE =3.2 W
-42.0
-41.7
-41.2
dBc
Drain Efficiency @ PAVE = 3.2 W
33.5
34.2
34.1
%
Input Return Loss
-9.0
-8.8
-10.2
dB
Figure 4. Small Signal Gain and Return Losses vs Frequency
Small Signal and Return Losses vs. Frequency CGHV27030S
VDD=28
V, IDQoptimzied
=0.13 A for 28 V perfomance)
measured in AD-03-000308 (Application
circuit
VDD=28 V, IDQ=0.13
30
Input and Output Return Loss
Gain (dB)
(dB)Return Loss
Input and Gain
Output
25
20
15
10
5
0
-5
-10
-15
S11
-20
S21
S22
-25
-30
2200
2300
2400
2500
2600
2700
2800
Frequency (MHz)
2900
3000
3100
3200
Frequency (MHz)
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
8
Typical Performance in Application Circuit CGHV27030S-AMP2
Figure 5. Typical Drain
Efficiency
ACLR
vs.Power
Output Power
Typical
Drain Efficiencyand
and ACLR
vs Output
in Application Circuit (AD-03-000308) optimized for 28 V operation
VDDCGHV27030S
= 28 V, measured
IDQ = 0.13
A, 1c
WCDMA,
PAR
=
7.5 dB
VDD=28V,IDQ=0.13
0
45
ACLR_2p5
-5
40
ACLR_2p6
EFF2P5
ACLR(dBc)
30
EFF2P6
EFF2P7
-20
25
-25
20
-30
15
-35
10
-40
5
-45
18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38
Efficiency (%)
-15
ACLR (dBc)
35
ACLR_2p7
Efficiency (%)
-10
0
Pout (dBm)
Pout (dBm)
Figure 6. Typical Gain, Drain Efficiency and ACLR vs Frequency
Typical
Drain=Efficiency
ACLR
vs. Frequency
VDD = 28CGHV27030S
V, IDQ = 0.13
A, PAVE
3.2
W,and1c
WCDMA,
PAR = 7.5 dB
measured in Application
Circuit (AD-03-000308) optimized for 28 V operation
VDD=28 V, IDQ-0.13,PAVE=3.2W,1cWCDMA, PAR=7.5 dB
40
-25.00
30
-30.00
25
20
-32.50
GAIN
EFF
ACLR
-35.00
Gain
15
-37.50
10
-40.00
ACLR
5
0
2.45
ACLR (dBc)
-27.50
ACLR (dBc)
Gain
(dB),
(%)
Gain
(dB),Drain
Drain Efficiency
Efficiency (%)
Drain Efficiency
35
-42.50
2.50
2.55
2.60
2.65
2.70
-45.00
2.75
Frequency (GHz)
Frequency (GHz)
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
9
Source and Load Impedances for Application Circuit CGHV27030S-AMP2
D
Z Source
Z Load
G
Frequency (MHz) Z Source
Z Load
2500
2.9 - j2.7
14.5 + j7.4
2600
3.1 - j2.9
13.8 + j7.3
2700
2.7 - j3.1
12.9+j7.6
Note 1: VDD = 28 V, IDQ = 0.13 A in the DFN package
Note 2: Impedances are extracted from the CGHV27030S-AMP2 application
circuit and are not source and load pull data derived from the transistor
S
CGHV27030S-AMP2 Bill of Materials
Designator
Description
Qty
R1, R2
RES, 22.6, OHM, +/-1%, 1/16W, 0603
2
C1
CAP, 3.0 pF, ±0.1 pF, 0603, ATC
1
C2
CAP, 0.9 pF, ±0.05 pF, 0603, ATC
3
R3,R4,R5
RES, 1/16W, 0603, 1%, 5.1% OHMS
3
C3,C4
CAP, 1.2 pF, +/-0.1 pF, 0603, ATC
2
C5, C11, C15
CAP, 8.2 pF, ±0.25 pF, 0603, ATC
3
C6, C16
CAP, 470 pF, 5%, 100 V, 0603
2
C7, C17
CAP, 33000 pF, 0805, 100 V, 0603, X7R
2
C18
CAP, 1.0 UF, 100 V, 10%, X7R, 1210
1
C8
CAP, 10 UF 16 V TANTALUM
1
C19
CAP, 33 UF, 20%, G CASE
1
J1, J2
CONN, SMA, PANEL MOUNT JACK
2
J3
HEADER RT>PLZ .1CEN LK 5 POS
1
PCB
PCB, ROGERS 4350, ER 3.66
1
Q1
CGHV27030S, QFN
1
CGHV27030S-AMP2 Application Circuit
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
10
CGHV27030S-AMP2 Application Circuit Schematic, 28 V
5
4
3
2
1
CGHV27030S-AMP2 Application Circuit Outline, 28 V
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
11
Electrical Characteristics When Tested in CGHV27030S-AMP3, 28 V, 1.8 - 2.2 GHz
Parameter
1.8 GHz
2.0 GHz
2.2 GHz
Units
Small Signal Gain
19
19
18
dB
Adjacent Channel Power @ PAVE =3.2 W
-37
-38
-39
dBc
Drain Efficiency @ PAVE = 3.2 W
35
35
33
%
Input Return Loss
5
6
7
dB
Figure 7. Small Signal Gain and Return Losses vs Frequency
VDD = 28 V, IDQ = 0.13 A
25
Input and Output Return Loss
Gain (dB)
Gain (dB)Return Loss
Input and Output
20
15
10
5
0
-5
-10
-15
S11
-20
S21
S22
-25
1.5
1.6
1.7
1.8
1.9
2.0
2.1
Frequency (GHz)
2.2
2.3
2.4
2.5
Frequency (GHz)
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
12
Typical Performance in Application Circuit CGHV27030S-AMP3
Figure 8. Typical Drain Efficiency and ACLR vs. Output Power
VDD = 28 V, IDQ = 0.13 A, 1c WCDMA, PAR = 7.5 dB
0
60
-5
ACLR_1p8
40
DE_2p0
-20
DE_2p2
30
-25
-30
20
-35
-40
Drain Efficiency ( %)
ACLR (dBc)
DE_1p8
Drain Efficiency (%)
ACLR_2p2
-15
ACLR (dBc)
50
ACLR_2p0
-10
10
-45
-50
20
22
24
26
28
30
32
34
36
38
0
OutputPower
Power (dBm)
Output
(dBm)
Figure 9. Typical Gain, Drain Efficiency and ACLR vs Frequency
VDD = 28 V, IDQ = 0.13 A, PAVE = 3.2 W, 1c WCDMA, PAR = 7.5 dB
-20
-25
Drain Efficiency
30
-30
Gain
ACLR
20
-35
Drain Efficiency
10
ACLR (dBc)
40
ACLR (dBc)
Gain, dB & Drain Efficiency( %)
Gain, dB & Drain Efficiency( %)
50
-40
Gain
ACLR
0
1.8
1.9
2.0
2.1
2.2
-45
Frequency(GHz)
(GHz)
Frequency
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
13
Source and Load Impedances for Application Circuit CGHV27030S-AMP3
D
Z Source
Z Load
G
Frequency (MHz) Z Source
Z Load
1800
6.16 - j3.5
21.9 + j6.5
2000
6.8 - j1.7
21 + j8.4
2200
5.5 - j2.0
20.8 + j11
Note 1: VDD = 28 V, IDQ = 0.13 A in the DFN package
Note 2: Impedances are extracted from the CGHV27030S-AMP3 application
circuit and are not source and load pull data derived from the transistor
S
CGHV27030S-AMP3 Bill of Materials
Designator
Description
Qty
R1
RES, 10, OHM, +/-1%, 1/16W, 0603
1
R2
RES, 120, OHM, +/-1%, 1/16W, 0603
1
L1
IND, 3.9 nH, +/-5%, 0603, JOHANSON
1
C1
CAP, 0.7 pF, +/-0.1 pF, 0603, ATC
1
C2
CAP, 6.8 pF, +/-5%, 0603, ATC
1
C3
CAP, 47pF, +/-0.1 pF, 0603, ATC
1
C4
CAP, 1.5 pF, +/-0.1 pF, 0603, ATC
1
C5
CAP, 2.7 pF, +/-0.1 pF, 0603, ATC
1
C6, C12
CAP, 8.2 pF, +/-0.25 pF, 0603, ATC
2
C7, C13
CAP, 470 pF, 5%, 100 V, 0603
2
C8, C14
CAP, 33000 pF, 0805, X7R
2
C9
CAP 10 UF 16 V TANTALUM
1
C10
CAP, 0.7 pF, +/-0.05 pF, 0603, ATC
1
C11
CAP, 20 pF, +/-5%, 0603, ATC
1
C15
CAP, 1.0 UF, 100V, 10%, X7R, 1210
1
C16
CAP, 33 UF, 20%, G CASE
CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST
1
PCB, RO4350, 0.020” THK
1
BASEPLATE, CGH35015, 2.60 X 1.7
1
HEADER RT>PLZ .1CEN LK 5POS
1
2-56 SOC HD SCREW 1/4 SS
4
#2 SPLIT LOCKWASHER SS
4
CGHV27030S, QFN
1
J1, J2
J3
Q1
2
CGHV27030S-AMP3 Application Circuit
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
14
CGHV27030S-AMP3 Application Circuit Schematic, 28 V
CGHV27030S-AMP3 Application Circuit Outline, 28 V
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
15
Electrical Characteristics When Tested in CGHV27030S-AMP4, 50 V, 1.8 - 2.2 GHz
Parameter
1.8 GHz
2.0 GHz
2.2 GHz
Units
Small Signal Gain
22
22
21
dB
Adjacent Channel Power @ PAVE = 5 W
-39
-38
-37
dBc
Drain Efficiency @ PAVE = 5 W
31
31
33
%
Input Return Loss
5
7
6
dB
Figure 10. Small Signal Gain and Return Losses vs Frequency
VDD = 50 V, IDQ = 0.13 A
30
25
Input and Output Return Loss
Gain (dB)
Input and Output
Return Loss
Gain (dB)
20
15
10
5
0
-5
-10
S11
-15
S21
-20
-25
S22
1.5
1.6
1.7
1.8
1.9
2.0
2.1
Frequency (GHz)
2.2
2.3
2.4
2.5
Frequency (GHz)
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
16
Typical Performance in Application Circuit CGHV27030S-AMP4
Figure 11. Typical Drain Efficiency and ACLR vs. Output Power
VDD = 50 V, IDQ = 0.13 A, 1c WCDMA, PAR = 7.5 dB
0
45
ACLR_1p8
-5
40
ACLR_2p0
DE_1p8
30
DE_2p0
DE_2p2
-20
25
-25
20
-30
15
-35
10
-40
5
-45
20
22
24
26
28
30
32
34
36
38
Drain Efficiency ( %)
-15
ACLR
(dBc)
ACLR
(dBc)
35
ACLR_2p2
Drain Efficiency (%)
-10
0
Output Power (dBm)
Output Power (dBm)
Figure 12. Typical Gain, Drain Efficiency and ACLR vs Frequency
VDD = 50 V, IDQ = 0.13 A, PAVE = 5 W, 1c WCDMA, PAR = 7.5 dB
-20
40
-25
Drain Efficiency
30
-30
Gain
ACLR
20
-35
Drain Efficiency
10
ACLR (dBc)
ACLR
(dBc)
Gain, dB & Drain Efficiency( %)
Gain,
dB & Drain Efficiency (%)
50
-40
Gain
ACLR
0
1.8
1.9
2.0
2.1
2.2
-45
Frequency (GHz)
(GHz)
Frequency
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
17
Source and Load Impedances for Application Circuit CGHV27030S-AMP4
D
Z Source
Z Load
G
Frequency (MHz) Z Source
Z Load
1800
5.0 - j3.3
20.0 + j18.6
2000
6.4 - j3.3
17.8 + j19.1
2200
4.0 - j2.7
16.2 + j20.8
Note 1: VDD = VDD = 50 V, IDQ = 0.13 A in the DFN package
Note 2 Impedances are extracted from the CGHV27030S-AMP4 application
circuit and are not source and load pull data derived from the transistor
S
CGHV27030S-AMP4 Bill of Materials
Designator
Description
Qty
R1
RES, 220, OHM, +/-1%, 1/16W, 0603
1
R2
RES, 10, OHM, +/-1%, 1/16W, 0603
1
L1
IND, 3.3 nH, +/-5%, 0603, JOHANSON
1
C1
CAP, 3.3 pF, +/-0.1 pF, 0603, ATC
1
C2, C5, C10, C11
CAP, 8.2 pF, +/-5%, 0603, ATC
1
C3, C4
CAP, 0.6 pF, +/-0.1 pF, 0603, ATC
2
C6, C12
CAP, 470 pF, 5%, 100V, 0603, X
2
C7, C13
CAP, 33000 pF, 0805, 100V. X7R
2
C8
CAP 10 UF 16 V TANTALUM
1
C9
CAP, 1.0 pF, +/-0.1 pF, 0603, ATC
1
C14
CAP, 1.0 UF, 100V, 10%, X7R, 1210
1
C15
J1, J2
CAP, 33 UF, 20%, G CASE
CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST
2
PCB
PCB, RO4350, 0.020” THK
1
1
J3
HEADER RT>PLZ .1CEN LK 5POS
1
Q1
CGHV27030S, QFN
1
CGHV27030S-AMP4 Application Circuit
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
18
CGHV27030S-AMP4 Application Circuit Schematic, 50 V
CGHV27030S-AMP4 Application Circuit Outline, 50 V
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
19
Electrical Characteristics When Tested in CGHV27030S-AMP5, 50 V, 1.2 - 1.4 GHz
Parameter
1.2 GHz
1.3 GHz
1.4 GHz
Units
Output Power @ PIN = 27 dBm
35.5
33.5
32.5
W
Gain @ PIN = 27 dBm
18.5
18.25
18.1
dB
Drain Efficiency @ PIN = 27 dBm
71
67
65
%
Figure 13. Small Signal Gain and Return Losses vs Frequency
VDD = 50 V, IDQ = 0.125 A
Small Signal Gain and Return Loss vs. Frequency
Vdd = 50 V, Idq = 0.125 A
30
Gain (dB), Input and Output Return Loss (dB)
Gain (dB)
Input and Output Return Loss (dB)
25
20
15
10
5
0
-5
-10
-15
-20
S(2,1)
S(1,1)
-25
-30
S(2,2)
0.8
0.9
1
1.1
1.2
1.3
Frequency (GHz)
1.4
1.5
1.6
Frequency (GHz)
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
20
Typical Performance in Application Circuit CGHV27030S-AMP5
Figure 14. Typical Output Power and Drain Efficiency Input Power
VDD = 50 V, IDQ = 0.125 A, Pulse Width = 100 us, Duty Cycle = 10%
80
45
70
40
60
35
50
Output Power - 1.2 GHz
Output Power - 1.3 GHz
Output Power - 1.4 GHz
30
40
Drain Efficiency - 1.2 GHz
Drain Efficiency (%)
50
Drain Efficiency (%)
Output
Power (dBm)
Output Power (dBm)
Typical Output Power and Drain Efficiency vs. Output Power
Vdd = 50 V, Idq = 0.125 A, Pulse Width = 100 us, Duty Cycle = 10 %
Drain Efficiency - 1.3 GHz
Drain Efficiency - 1.4 GHz
25
20
30
13
15
17
19
21
Input Power (dBm)
23
25
27
29
20
Input Power (dBm)
Figure 15. Typical Output Power, Gain, and Drain Efficiency vs Frequency
VDD = 50 V, IDQ = 0.125 A, PIN = 27 dBm, Pulse Width = 100 us, Duty Cycle = 10%
CGHV27030S-TB5 RF Measurements vs Frequency at Pin = 27 dBm
Vdd = 50 V, Idq = 0.125 A, Pulse Width = 100 us, Duty Cycle = 10 %
Output Power (W), Gain (dB)
and
Efficiency
(%)
Output Power
(W), Drain
Gain (dB)
and Drain Efficiency(%)
90
Output Power
80
Gain
Drain Efficiency
Drain Efficiency
70
60
50
40
Output Power
30
Gain
20
10
0
1.05
1.10
1.15
1.20
1.25
1.30
1.35
Frequency (GHz)
1.40
1.45
1.50
1.55
Frequency (GHz)
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
21
Source and Load Impedances for Application Circuit CGHV27030S-AMP5
D
Z Source
Z Load
G
Frequency (MHz) Z Source
Z Load
1200
8.6 + j5.4
25.4 + j29.2
1300
8.7 + j5.1
27.6 + j30.5
1400
7.4 + j5.2
30.1 + j31.8
Note 1: VDD = 50 V, IDQ = 0.125 A in the DFN package
Note 2: Impedances are extracted from the CGHV27030S-AMP5 application
circuit and are not source and load pull data derived from the transistor
S
CGHV27030S-AMP5 Bill of Materials
Designator
Description
Qty
R1
RES, 2.2, OHM, 1/10W 5% 0603 SMD
1
R2
RES, 1/16W, 0603, 1%, 14.7 OHMS
1
C1
CAP, 2.2 pF, +/-0.1 pF, 0603, ATC
1
C2, C3
CAP, 3.9 pF, +/-0.1 pF, 0603, ATC
2
C4
CAP, 1.2 pF, +/-0.1 pF, 0603, ATC
1
C5
CAP, 24 pF, +/-5%, 0603, ATC
1
C6, C12
CAP, 470 pF, 5%, 100V, 0603, X
2
C7, C13
CAP, 33000 pF, 0805, 100V, Z7R
2
C8, C14
CAP, 1.0 UF, 100V, 10%, X7R, 1210
2
C9
CAP, 43 pF, +/-5%, 0603, ATC
1
C10
CAP, 4.7 pF, +/-0.1 pF, 0603, ATC600S
1
C11
CAP, 100.0 pF, +/-5%, 0603, ATC
1
C15
J1, J2
CAP, 33 UF, 20%, G CASE
CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST
2
PCB
PCB, RO4350, L-BAND, 1.7” X 2.6”
1
J3
HEADER RT>PLZ .1CEN LK 5POS
1
Q1
CGHV27030S, QFN
1
CGHV27030S-AMP5 Application Circuit
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
22
CGHV27030S-AMP5 Application Circuit Schematic, 50 V
CGHV27030S-AMP5 Application Circuit Outline, 50 V
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
23
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
2 (125 V to 250 V)
JEDEC JESD22 C101-C
Moisture Sensitivity Level (MSL) Classification
Parameter
Symbol
Level
Test Methodology
Moisture Sensitivity Level
MSL
3 (168 hours)
IPC/JEDEC J-STD-20
Typical Performance
GMAX and K-Factor vs Frequency
Maximum Avaliable Gain & K-Factor
VDD = 50 V, IDQ = 130
mA, Tcase = 25°C
CGHV27030S
Vdd = 50 V, Idq = 130 mA, Tcase = 25°C
45
2
Gmax
40
1.75
K-Factor
GMAX(dB)
GMAX(dB)
1.25
30
1
25
K-Factor
K-Factor
1.5
35
0.75
20
0.5
15
10
0.25
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
Frequency (GHz)
Frequency (GHz)
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
24
Product Dimensions CGHV27030S (Package 3 x 4 DFN)
PIN
Input/Output
1
GND
2
NC
3
RF IN
4
RF IN
5
NC
6
GND
7
GND
8
NC
9
RF OUT
10
RF OUT
11
NC
12
GND
Note: Leadframe finish for 3x4 DFN package is Nickel/Palladium/Gold. Gold is the outer layer
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
25
Part Number System
CGHV27030S
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Table 1.
Parameter
Value
Units
Upper Frequency1
2.7
GHz
Power Output
30
W
Package
Surface Mount -
Note1: Alpha characters used in frequency code indicate a value
greater than 9.9 GHz. See Table 2 for value.
Table 2.
Rev 5.5 – May 2021
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
26
Product Ordering Information
Order Number
Description
Unit of Measure
CGHV27030S
GaN HEMT
Each
CGHV27030S-AMP1
Test board without GaN HEMT,
50 V 2.5-2.7 GHz
Each
CGHV27030S-AMP2
Test board with GaN HEMT installed
28 V 2.5-2.7 GHz
Each
CGHV27030S-AMP3
Test board with GaN HEMT installed
28 V 1.8-2.2 GHz
Each
CGHV27030S-AMP4
Test board with GaN HEMT installed
50 V 1.8-2.2 GHz
Each
CGHV27030S-AMP5
Test board with GaN HEMT installed
50 V 1.2-1.4 GHz
Each
Rev 5.5 – May 2021
Image
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27030S
27
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/rf
Sales Contact
rfsales@cree.com
Notes & Disclaimer
Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree
in large quantities and are provided for information purposes only. Cree products are not warranted or authorized
for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where
a failure would reasonably be expected to cause severe personal injury or death. No responsibility is assumed by
Cree for any infringement of patents or other rights of third parties which may result from use of the information
contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree.
© 2013 - 2021 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc.
Rev 5.5 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
