CGHV27015S
15 W, DC - 6.0 GHz, 50 V, GaN HEMT
Description
Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT) designed specifically for high efficiency, high gain
and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE,
4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT
device is unmatched so it is suitable for power amplifier applications from
10 MHz through 6000 MHz, such as tactical communications, CATV, UAV data
links, as well as a driver stage amplifier for RADAR, EW, and SatCom devices.
At a VDD of 50 V, the device provide 2.5 W of average power or 15 W of peak
power. At a VDD of 28 V, the device provides 1 W of average power and 7 W
of peak power. The transistor is available in a 3 mm x 4 mm, surface mount,
dualflat-no-lead (DFN) package.
Package Type: 3x4 DFN
PN: CGHV27015S
Typical Performance Over 2.4-2.7 GHz (TC = 25˚C), 50 V
Parameter
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
Units
Small Signal Gain
23
22
21.7
21.2
dB
Adjacent Channel Power @ PAVE = 2.5 W
-36.7
-40.7
-42.4
-42.5
dBc
Drain Efficiency @ PAVE = 2.5 W
35.9
33.5
30.4
30.2
%
Input Return Loss
-9.3
-9.6
-8.6
-7.8
dB
Note: Measured in the CGHV27015S-AMP1 application circuit. Under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH.
Features for 50 V in CGHV27015S-AMP1
•
•
•
•
•
•
2.4 - 2.7 GHz Operation
15 W Typical Output Power
21 dB Gain at 2.5 W PAVE
-38 dBc ACLR at 2.5 W PAVE
32% efficiency at 2.5 W PAVE
High degree of APD and DPD correction can be applied
Large Signal Models Available for ADS and MWO
Rev 3.4 – May 2021
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CGHV27015S
2
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Notes
Drain-Source Voltage
VDSS
150
Volts
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
2
mA
25˚C
Maximum Drain Current1
IDMAX
0.9
A
25˚C
Soldering Temperature
TS
245
˚C
TC
-40, +150
˚C
RθJC
11.1
˚C/W
2
Case Operating Temperature3
Thermal Resistance, Junction to Case
4
Notes:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering
at wolfspeed.com/RF/Document-Library
3
TC = Case temperature for the device. It refers to the temperature at the
ground tab underneath the package. The PCB will add additional
thermal resistance
85˚C
Measured for the CGHV27015S at PDISS = 5 W
The RTH for Cree’s demonstration amplifier, CGHV27015S-AMP1, with 31
x 0.011 via holes designed on a 20 mil thick Rogers 4350 PCB, is 3.9°C.
The total RTH from the heat sink to the junction is 11.1°C + 3.9°C = 15°C/W
4
5
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 2 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.6
–
VDC
VDS = 50 V, ID = 60 mA
Saturated Drain Current
IDS
1.29
1.84
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
V (BR)DSS
125
–
–
VDC
VGS = -8 V, ID = 2 mA
DC Characteristics1
RF Characteristics2 (TC = 25˚C, F0 = 2.65 GHz unless otherwise noted)
Gain
G
–
22
–
dB
VDD = 50 V, IDQ = 60 mA, PIN = 10 dBm
POUT
–
42.3
–
dBm
VDD = 50 V, IDQ = 60 mA, PIN = 25 dBm
Drain Efficiency3
η
–
72
–
%
VDD = 50 V, IDQ = 60 mA, PIN = 25 dBm
Output Mismatch Stress3
VSWR
–
10:1
–
Y
No damage at all phase angles,
VDD = 50 V, IDQ = 60 mA, PIN = 25 dBm
CGS
–
3.15
–
pF
VDS = 50 V, Vgs = -8 V, ƒ = 1 MHz
Output Capacitance
CDS
–
1.06
–
pF
VDS = 50 V, Vgs = -8 V, ƒ= 1 MHz
Feedback Capacitance
CGD
–
0.058
–
pF
VDS = 50 V, Vgs = -8 V, ƒ= 1 MHz
Output Power
3
Dynamic Characteristics
Input Capacitance4
4
Notes:
1
Measured on wafer prior to packaging
2
Measured in Cree’s production test fixture. This fixture is designed for
high volume test at 2.65 GHz
Rev 3.4 – May 2021
Un-modulated pulsed signal, 100 μs, 10% duty cycle
Includes package and internal matching components
3
4
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CGHV27015S
3
Typical Performance in Application Circuit CGHV27015S-AMP1
Figure 1. Small Signal Gain and Return Losses vs Frequency
VDD = 50 V, IDQ = 60 mA
30
20
Input and Output Return Loss
Gain (dB)
Input and Output
Return Loss
Gain (dB)
25
15
10
5
0
-5
-10
-15
S11
S21
-20
-25
S22
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
3.1
3.2
Frequency (GHz)
Frequency (GHz)
Figure 2. Typical Drain Efficiency and ACLR vs. Output Power
VDD = 50 V, IDQ = 60 mA, 1 Carrier WCDMA, PAR = 7.5 dB
0
45
ACLR_2p5
ACLR_2p7
-15
ACLR (dBc)
35
ACLR_2P6
Efficiency
30
EFF_2p4
EFF_2p5
-20
25
EFF_2P6
EFF_2p7
-25
20
-30
15
-35
10
Efficiency (%)
-10
ACLR (dBc)
40
ACLR_2p4
Efficiency (%)
-5
ACLR
-40
-45
5
18
19
20
21
22
23
24
25
26
27
28
29
30
Output Power (dBm)
31
32
33
34
35
36
37
38
0
Output Power (dBm)
Rev 3.4 – May 2021
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CGHV27015S
4
Typical Performance in Application Circuit CGHV27015S-AMP1
Figure 3. Typical Gain, Drain Efficiency and ACLR vs Frequency
VDD = 50 V , IDQ = 60 mA, PAVE = 2.5 W, 1 Carrier WCDMA, PAR = 7.5 dB
-25.0
35
-27.5
Drain Efficiency
-30.0
25
-32.5
Gain
20
-35.0
15
-37.5
10
5
-40.0
ACLR
GAIN
ACLR (dBc)
30
ACLR (dBc)
Gain (dB) & Drain Efficiency (%)
Gain (dB) Drain Efficiency (%)
40
-42.5
EFF
ACLR
0
2.35
2.40
2.45
2.50
2.55
Frequency (GHz)
2.60
2.65
2.70
-45.0
2.75
Frequency (GHz)
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
2 (125 V to 250 V)
JEDEC JESD22 C101-C
Moisture Sensitivity Level (MSL) Classification
Parameter
Symbol
Level
Test Methodology
Moisture Sensitivity Level
MSL
3 (168 hours)
IPC/JEDEC J-STD-20
Rev 3.4 – May 2021
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CGHV27015S
5
Typical Performance
GMAX and K-Factor vs Frequency
Maximum
& K-Factor
VDD = 50
V, IDQ =Avaliable
60 mA,Gain
Tcase
= 25°C
CGHV27015S
Vdd = 50 V, Idq = 60 mA, Tcase = 25°C
40
1.25
Gmax
K-Factor
1
0.75
25
0.5
K-Factor
30
K-Factor
GMAX (dB)
GMAX (dB)
35
20
0.25
15
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
Frequency (GHz)
Frequency (GHz)
Rev 3.4 – May 2021
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CGHV27015S
6
Source and Load Impedances for Application Circuit CGHV27015S-AMP1
D
Z Source
Z Load
G
Frequency
Z Source
Z Load
2400
7.9 + j2.14
15.8 + j43.1
2500
8 + j2.9
18.3 + j43.7
2600
7.9 + j3.6
19.7 + j43.4
2700
7.7 - j4.4
19.7 + j43.4
S
Note1. VDD = 50 V, IDQ = 60 mA in the DFN package
Note2. Impedances are extracted from the CGHV27015S-AMP1 application
circuit and are not source and load pull data derived from the transistor
CGHV27015S-AMP1 Application Circuit Bill of Materials
Rev 3.4 – May 2021
Designator
Description
Qty
R1
RES, 332,OHM, +/- 1%, Vishay
1
R2
RES, 22.6,OHM, +/- 1%, 1/16W, 0603
1
R3, R4
RES, 2.2,OHM, +/- 1%, 1/16W, 0603
1
C1, C4
CAP, 27pF, +/- 5%, 0603, ATC
2
C2
CAP, 2.0pF,+/-0.1pF, 0603 ATC
1
C3
CAP, 0.1pF,+/-0.05 pF, 0603, ATC
2
C8
CAP, 6.2pF, +/-0.1pF, 0603, ATC
1
C13
CAP, 10pF +/-5%, 0603, ATC
1
C6, C11
CAP, 33000pF, 0805, ATC
2
C7, C12
CAP, 470PF, 5%, 100V, 0603,
2
C10
CAP, 1.0UF, 100V, 10%, X7R, 1210
1
C5
CAP 10UF 16V TANTALUM
1
C9
CAP, 33UF, 20%, G CASE
1
J1, J2
CONN, SMA, PANEL MOUNT JACK, FLANGE,
4-HOLE, BLUNT POST
2
J3
HEADER RT>PLZ .1CEN LK 5POS
1
Q1
CGHV27015S, DFN
1
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CGHV27015S
7
CGHV27015S-AMP1 Application Circuit, 50 V
CGHV27015S-AMP1 Application Circuit Schematic, 50 V
Rev 3.4 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27015S
8
CGHV27015S-AMP1 Application Circuit, 50 V
Rev 3.4 – May 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV27015S
9
Product Dimensions CGHV27015S (Package 3 x 4 DFN)
Pin
Input/Output
1
GND
2
NC
3
RF IN
4
RF IN
5
NC
6
GND
7
GND
8
NC
9
RF OUT
10
RF OUT
11
NC
12
GND
Note: Leadframe finish for 3x4 DFN package is Nickel/Palladium/Gold. Gold is the outer layer.
Rev 3.4 – May 2021
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CGHV27015S
10
Part Number System
CGHV27015S
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Table 1.
Parameter
Value
Units
Upper Frequency1
2.7
GHz
Power Output
15
W
Package
Surface Mount
-
Note1: Alpha characters used in frequency code indicate a value
greater than 9.9 GHz. See Table 2 for value.
Table 2.
Rev 3.4 – May 2021
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
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CGHV27015S
11
Product Ordering Information
Order Number
Description
Unit of Measure
CGHV27015S
GaN HEMT
Each
CGHV27015S-AMP1
Test board with GaN HEMT installed
Each
Rev 3.4 – May 2021
Image
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CGHV27015S
12
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@cree.com
Notes
Disclaimer
Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree in
large quantities and are provided for information purposes only. Cree products are not warranted or authorized for use
as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would
reasonably be expected to cause severe personal injury or death. No responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license
is granted by implication or otherwise under any patent or patent rights of Cree.
© 2014-2021 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc.
Rev 3.4 – May 2021
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