REI Datasheet
X28C512, X28C513
5V, Byte Alterable EEPROM
The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high
performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories,
the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved
pin out for byte wide memories, compatible with industry standard EPROMS.
The X28C512, X28C513 support a 128-byte page write operation, effectively providing a 39µs/byte
write cycle and enabling the entire memory to be written in less than 2.5 seconds. The X28C512,
X28C513 also feature DATA Polling and Toggle Bit Polling, system software support schemes used
to indicate the early completion of a write cycle. In addition, the X28C512, X28C513 support the
software data protection option.
Rochester Electronics
Manufactured Components
Rochester branded components are
manufactured using either die/wafers
purchased from the original suppliers
or Rochester wafers recreated from the
original IP. All recreations are done with
the approval of the OCM.
Parts are tested using original factory
test programs or Rochester developed
test solutions to guarantee product
meets or exceeds the OCM data sheet.
Quality Overview
•
•
•
•
ISO-9001
AS9120 certification
Qualified Manufacturers List (QML) MIL-PRF-38535
• Class Q Military
• Class V Space Level
Qualified Suppliers List of Distributors (QSLD)
• Rochester is a critical supplier to DLA and
meets all industry and DLA standards.
Rochester Electronics, LLC is committed to supplying
products that satisfy customer expectations for
quality and are equal to those originally supplied by
industry manufacturers.
The original manufacturer’s datasheet accompanying this document reflects the performance
and specifications of the Rochester manufactured version of this device. Rochester Electronics
guarantees the performance of its semiconductor products to the original OEM specifications.
‘Typical’ values are for reference purposes only. Certain minimum or maximum ratings may be
based on product characterization, design, simulation, or sample testing.
© 2013 Rochester Electronics, LLC. All Rights Reserved 09102013
To learn more, please visit www.rocelec.com
X28C512, X28C513
®
Data Sheet
June 7, 2006
5V, Byte Alterable EEPROM
Features
The X28C512, X28C513 are 64K x 8 EEPROM, fabricated
with Intersil’s proprietary, high performance, floating gate
CMOS technology. Like all Intersil programmable nonvolatile
memories, the X28C512, X28C513 are 5V only devices. The
X28C512, X28C513 feature the JEDEC approved pin out for
byte wide memories, compatible with industry standard
EPROMS.
• Access Time: 90ns
The X28C512, X28C513 support a 128-byte page write
operation, effectively providing a 39µs/byte write cycle and
enabling the entire memory to be written in less than 2.5
seconds. The X28C512, X28C513 also feature DATA Polling
and Toggle Bit Polling, system software support schemes
used to indicate the early completion of a write cycle. In
addition, the X28C512, X28C513 support the software data
protection option.
FN8106.2
• Simple Byte and Page Write
- Single 5V supply
• No external high voltages or VPP control circuits
- Self-timed
• No erase before write
• No complex programming algorithms
• No overerase problem
• Low Power CMOS
- Active: 50mA
- Standby: 500µA
• Software Data Protection
- Protects data against system level inadvertent writes
• High Speed Page Write Capability
• Highly Reliable Direct Write™ Cell
- Endurance: 100,000 write cycles
- Data retention: 100 years
- Early end of write detection
- DATA polling
- Toggle bit polling
• Two PLCC and LCC Pinouts
- X28C512
• X28C010 EPROM pin compatible
- X28C513
• Compatible with lower density EEPROMs
• Pb-Free Plus Anneal Available (RoHS Compliant)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2005, 2006. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
X28C512, X28C513
Block Diagram
A7-A15
X Buffers
Latches and
Decoder
A0-A6
Y Buffers
Latches and
Decoder
512Kbit
EEPROM
Array
I/O Buffers
and Latches
I/O0-I/O7
CE
OE
WE
Data Inputs/Outputs
Control
Logic and
Timing
VCC
VSS
Ordering Information
PART NUMBER
X28C512D
X28C512DM
X28C512J
X28C513EM
PART MARKING
ACCESS TIME
(ns)
TEMP RANGE (°C)
X28C512D
-
0 to +70
X28C512DM
-55 to +125
X28C512J
0 to +70
X28C513EM
-55 to +125
32 Ld CERDIP
32 Ld CERDIP
32 Ld PLCC
32 Ld LCC
X28C512D-12
X28C512D-12
0 to +70
32 Ld CERDIP
X28C512DI-12
X28C512DI-12
-40 to +85
32 Ld CERDIP
X28C512DMB-12
X28C512DMB-12
Mil-STD-883
32 Ld CERDIP
X28C512FMB-12
X28C512FMB-12
Mil-STD-883
X28C512J-12
0 to +70
32 Ld PLCC
X28C512J-12 Z
0 to +70
32 Ld PLCC (Pb-free)
X28C512J-12*
X28C512JZ-12* (See Note)
X28C512JI-12
120
PACKAGE
32 Ld Flat Pack
X28C512JI-12
-40 to +85
32 Ld PLCC
X28C512JIZ-12* (See Note)
X28C512JI-12 Z
-40 to +85
32 Ld PLCC (Pb-free)
X28C512JM-12
X28C512JM-12
-55 to +125
32 Ld PLCC
X28C512KM-12
X28C512KM-12
-55 to +125
36 Ld CPGA
X28C512PI-12
X28C512PI-12
-40 to +85
32 Ld PDIP
X28C512RMB-12
Mil-STD-883
32 Ld Flat Pack
X28C513EM-12
-55 to +125
32 Ld LCC
X28C513EMB-12
Mil-STD-883
32 Ld LCC
X28C513J-12
0 to +70
32 Ld PLCC
X28C513J-12 Z
0 to +70
32 Ld PLCC (Pb-free)
X28C512RMB-12
X28C513EM-12
X28C513EMB-12
X28C513J-12*
X28C513JZ-12* (Note)
X28C513JI-12*
X28C513JI-12
-40 to +85
32 Ld PLCC
X28C513JIZ-12* (Note)
X28C513JI-12 Z
-40 to +85
32 Ld PLCC (Pb-free)
X28C513JM-12
X28C513JM-12
-55 to +125
32 Ld PLCC
2
FN8106.2
June 7, 2006
X28C512, X28C513
Ordering Information (Continued)
PART MARKING
ACCESS TIME
(ns)
X28C512D-15
X28C512D-15
150
0 to +70
32 Ld CERDIP
X28C512DI-15
X28C512DI-15
-40 to +85
32 Ld CERDIP
X28C512DMB-15
Mil-STD-883
32 Ld CERDIP
X28C512J-15
0 to +70
32 Ld PLCC
X28C512J-15 Z
0 to +70
32 Ld PLCC (Pb-free)
X28C512JI-15
-40 to +85
32 Ld PLCC
X28C512JI-15 Z
-40 to +85
32 Ld PLCC (Pb-free)
PART NUMBER
X28C512DMB-15
X28C512J-15*
X28C512JZ-15* (See Note)
X28C512JI-15*
X28C512JIZ-15* (See Note)
TEMP RANGE (°C)
PACKAGE
X28C512JM-15
X28C512JM-15
-55 to +125
32 Ld PLCC
X28C513EM-15
X28C513EM-15
-55 to +125
32 Ld LCC
X28C513EMB-15
Mil-STD-883
32 Ld LCC
X28C513EMB-15
X28C513J-15*
X28C513JZ-15* (Note)
X28C513JI-15
X28C513J-15
0 to +70
32 Ld PLCC
X28C513J-15 Z
0 to +70
32 Ld PLCC (Pb-free)
X28C513JI-15
-40 to +85
32 Ld PLCC
X28C513JIZ-15* (Note)
X28C513JI-15 Z
-40 to +85
32 Ld PLCC (Pb-free)
X28C513JM-15
X28C513JM-15
-55 to +125
32 Ld PLCC
Mil-STD-883
32 Ld CERDIP
X28C512DMB-20
X28C512DMB-20
200
X28C512JM-20
X28C512JM-20
-55 to +125
32 Ld PLCC
X28C512KI-20
X28C512KI-20
-40 to +85
36 Ld CPGA
X28C512KM-20
X28C512KM-20
-55 to +125
36 Ld CPGA
X28C513EI-20
X28C513EI-20
-40 to +85
32 Ld LCC
X28C513EM-20
X28C513EM-20
-55 to +125
32 Ld LCC
X28C513EMB-20
X28C513EMB-20
Mil-STD-883
32 Ld LCC
X28C513J-20T1
X28C513J-20
0 to +70
X28C512EM-25
X28C512EM-25
-55 to +125
32 Ld LCC
X28C512JM-25
X28C512JM-25
-55 to +125
32 Ld PLCC
X28C512KM-25
X28C512KM-25
-55 to +125
36 Ld CPGA
X28C512KMB-25
Mil-STD-883
36 Ld CPGA
X28C513EM-25
-55 to +125
32 Ld LCC
X28C513EMB-25
Mil-STD-883
32 Ld LCC
X28C512KMB-25
X28C513EM-25
X28C513EMB-25
250
32 Ld PLCC Tape and Reel
*Add "T1" suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish,
which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
3
FN8106.2
June 7, 2006
X28C512, X28C513
Pinouts
3
30
NC
4
29
A14
A7
5
28
A13
A6
6
27
A8
A5
7
26
A9
A4
8
25
A11
A3
9
24
OE
A2
10
23
A10
A1
11
22
CE
A0
12
21
I/O5
I/O0
13
20
I/O4
I/O1
14
19
I/O3
I/O2
15
18
I/O2
VSS
16
17
I/O1
A2
12
A3
11
A4
10
9
A5
A6
8
7
6
I/O 4
I/O 1
VSS
I/O 7
20
16
18
23
Bottom
View
A7
NC
A15
A12
2
5
NC
4
NC
3
VCC
NC
OE
A10
25
26
A11
27
A9
28
A8
29
A13
30
NC
36
34
32
NC
1
WE
35
NC
33
10
11
I/O0
A14
31
A6
A5
A4
54 3 2
A3
A2
8
9
A1
A0
NC
10
11
I/O0
Pin Descriptions
NC
25
24
23
12
22
13 15 16 17 18 19 20
21
14
6
7
30
32 31 29
1
28
27
26
X28C513
(Top View)
OE
A10
CE
I/O7
25
24
23
A8
A9
A11
NC
OE
A10
CE
I/O7
12
22
13 15 16 17 18 19 20
I/O6
21
14
I/O1
I/O2
VSS
X28C512
A0
14
A2
A1
A0
27
26
X28C512
(Top View)
I/O6
A15
A12
A1
13
CE
24
8
9
A14
A13
A8
A9
A11
I/O5
WE
A4
A3
I/O3
I/O4
I/O5
VCC
31
I/O 6
22
30
32 31 29
28
NC
I/O3
I/O4
32
2
I/O 5
I/O 3
21
19
1
A15
VCC
WE
A13
1
NC
I/O 2
17
6
7
A7
NC
I/O0
15
54 3 2
A6
A5
I/O1
I/O2
VSS
PGA
A7
A12
A14
Plastic DIP
CERDIP
FLAT Pack
SOIC (R)
A15
NC
NC
VCC
WE
A12
PLCC/LCC
Pin Names
Addresses (A0-A15)
SYMBOL
DESCRIPTION
A0-A15
Address Inputs
I/O0-I/O7
Data Input/Output
The Chip Enable input must be LOW to enable all read/write
operations. When CE is HIGH, power consumption is
reduced.
WE
Write Enable
CE
Chip Enable
OE
Output Enable
Output Enable (OE)
VCC
+5V
VSS
Ground
NC
No Connect
The Address inputs select an 8-bit memory location during a
read or write operation.
Chip Enable (CE)
The Output Enable input controls the data output buffers and
is used to initiate read operations.
Data In/Data Out (I/O0-I/O7)
Data is written to or read from the X28C512, X28C513
through the I/O pins.
Write Enable (WE)
The Write Enable input controls the writing of data to the
X28C512, X28C513.
4
FN8106.2
June 7, 2006
X28C512, X28C513
Device Operation
DATA Polling (I/O7)
Read
Read operations are initiated by both OE and CE LOW. The
read operation is terminated by either CE or OE returning
HIGH. This two line control architecture eliminates bus
contention in a system environment. The data bus will be in
a high impedance state when either OE or CE is HIGH.
Write
Write operations are initiated when both CE and WE are
LOW and OE is HIGH. The X28C512, X28C513 support
both a CE and WE controlled write cycle. That is, the
address is latched by the falling edge of either CE or WE,
whichever occurs last. Similarly, the data is latched internally
by the rising edge of either CE or WE, whichever occurs first.
A byte write operation, once initiated, will automatically
continue to completion, typically within 5ms.
Page Write Operation
The page write feature of the X28C512, X28C513 allows the
entire memory to be written in 2.5 seconds. Page write
allows two to one hundred twenty-eight bytes of data to be
consecutively written to the X28C512, X28C513, prior to the
commencement of the internal programming cycle. The host
can fetch data from another device within the system during
a page write operation (change the source address), but the
page address (A7 through A15) for each subsequent valid
write cycle to the part during this operation must be the same
as the initial page address.
The X28C512, X28C513 feature DATA polling as a method
to indicate to the host system that the byte write or page
write cycle has completed. DATA Polling allows a simple bit
test operation to determine the status of the X28C512,
X28C513, eliminating additional interrupt inputs or external
hardware. During the internal programming cycle, any
attempt to read the last byte written will produce the
complement of that data on I/O7 (i.e. write data = 0xxx xxxx,
read data = 1xxx xxxx). Once the programming cycle is
complete, I/O7 will reflect true data.
Toggle Bit (I/O6)
The X28C512, X28C513 also provide another method for
determining when the internal write cycle is complete. During
the internal programming cycle, I/O6 will toggle from HIGH to
LOW and LOW to HIGH on subsequent attempts to read the
device. When the internal cycle is complete, the toggling will
cease, and the device will be accessible for additional read
or write operations.
The page write mode can be initiated during any write
operation. Following the initial byte write cycle, the host can
write an additional one to one hundred twenty-seven bytes in
the same manner as the first byte was written. Each
successive byte load cycle, started by the WE HIGH to LOW
transition, must begin within 100µs of the falling edge of the
preceding WE. If a subsequent WE HIGH to LOW transition
is not detected within 100µs, the internal automatic
programming cycle will commence. There is no page write
window limitation. Effectively, the page write window is
infinitely wide, so long as the host continues to access the
device within the byte load cycle time of 100µs.
Write Operation Status Bits
The X28C512, X28C513 provide the user two write
operation status bits. These can be used to optimize a
system write cycle time. The status bits are mapped onto the
I/O bus as shown in Figure 1.
I/O
DP
TB
5
4
3
2
1
0
Reserved
Toggle Bit
DATA Polling
FIGURE 1. STATUS BIT ASSIGNMENT
5
FN8106.2
June 7, 2006
X28C512, X28C513
DATA Polling I/O7
WE
Last
Write
CE
OE
VIH
VOH
HIGH Z
I/O7
VOL
A0-A15
An
An
An
X28C512, X28C513
Ready
An
An
An
An
FIGURE 2A. DATA POLLING BUS SEQUENCE
DATA Polling can effectively halve the time for writing to the
X28C512, X28C513. The timing diagram in Figure 2A
illustrates the sequence of events on the bus. The software
flow diagram in Figure 2B illustrates one method of
implementing the routine.
Write Data
No
Writes
Complete?
Yes
Save Last Data
and Address
Read Last
Address
IO7
Compare?
No
Yes
Ready
FIGURE 2B. DATA POLLING SOFTWARE FLOW
6
FN8106.2
June 7, 2006
X28C512, X28C513
The Toggle Bit I/O6
Last
WE Write
CE
OE
VOH
I/O6
*
HIGH Z
VOL
*
X28C512, X28C513
Ready
* Beginning and ending state of I/O6 will vary.
FIGURE 3A. TOGGLE BIT BUS SEQUENCE
Hardware Data Protection
The X28C512, X28C513 provide three hardware features
that protect nonvolatile data from inadvertent writes.
Last Write
- Noise Protection—A WE pulse typically less than 10ns
will not initiate a write cycle.
- Default VCC Sense—All write functions are inhibited
when VCC is 3.6V.
- Write Inhibit—Holding either OE LOW, WE HIGH, or CE
HIGH will prevent an inadvertent write cycle during
power-up and power-down, maintaining data integrity.
Write cycle timing specifications must be observed
concurrently.
Load Accum
From Addr N
Compare
Accum with
Addr N
Software Data Protection
No
Compare
Ok?
Yes
X28C512
Ready
FIGURE 3B. TOGGLE BIT SOFTWARE FLOW
The Toggle Bit can eliminate the chore of saving and
fetching the last address and data in order to implement
DATA Polling. This can be especially helpful in an array
comprised of multiple X28C512, X28C513 memories that
are frequently updated. Toggle Bit Polling can also provide a
method for status checking in multiprocessor applications.
The timing diagram in Figure 3A illustrates the sequence of
events on the bus. The software flow diagram in Figure 3B
illustrates a method for polling the Toggle Bit.
7
The X28C512, X28C513 offer a software controlled data
protection feature. The X28C512, X28C513 are shipped
from Intersil with the software data protection NOT
ENABLED; that is, the device will be in the standard
operating mode. In this mode data should be protected
during power-up/-down operations through the use of
external circuits. The host would then have open read and
write access of the device once VCC was stable.
The X28C512, X28C513 can be automatically protected
during power-up and power-down without the need for
external circuits by employing the software data protection
feature. The internal software data protection circuit is
enabled after the first write operation utilizing the software
algorithm. This circuit is nonvolatile and will remain set for
the life of the device unless the reset command is issued.
Once the software protection is enabled, the X28C512,
X28C513 are also protected from inadvertent and accidental
writes in the powered-up state. That is, the software
algorithm must be issued prior to writing additional data to
the device. Note: The data in the three-byte enable
sequence is not written to the memory array.
FN8106.2
June 7, 2006
X28C512, X28C513
Software Data Protection
VCC
(VCC)
0V
Data
Addr
AAA
5555
55
2AAA
A0
5555
Writes
ok
tWC
Write
Protected
CE
≤ tBLC MAX
WE
Byte
or
Page
Note: All other timings and control pins are per page write timing requirements
FIGURE 4A. TIMING SEQUENCE—SOFTWARE DATA PROTECT ENABLE SEQUENCE FOLLOWED BY BYTE OR PAGE WRITE
Software Algorithm
Selecting the software data protection mode requires the
host system to precede data write operations by a series of
three write operations to three specific addresses. Refer to
Figures 4A and 4B for the sequence. The three byte
sequence opens the page write window, enabling the host to
write from one to one hundred twenty-eight bytes of data.
Once the page load cycle has been completed, the device
will automatically be returned to the data protected state.
Write Data AA
to Address
5555
Write Data 55
to Address
2AAA
Regardless of whether the device has previously been
protected or not, once the software data protected algorithm
is used and data has been written, the X28C512, X28C513
will automatically disable further writes, unless another
command is issued to cancel it. If no further commands are
issued the X28C512, X28C513 will be write-protected during
power-down and after any subsequent power-up. The state
of A15 while executing the algorithm is “don’t care”.
Write Data 80
to Address
5555
Write Data XX
to any
Address
Note: Once initiated, the sequence of write operations
should not be interrupted.
Optional
Byte/Page
Load Operation
Write Last
Byte to
Last Address
After tWC
Re-Enters Data
Protected State
FIGURE 4B. WRITE SEQUENCE FOR SOFTWARE DATA
PROTECTION
8
FN8106.2
June 7, 2006
X28C512, X28C513
Resetting Software Data Protection
VCC
Data
Addr
AAA
5555
55
2AAA
80
5555
AA
5555
55
2AAA
20
5555
≥ tWC
Standard
Operating
Mode
CE
WE
Note: All other timings and control pins are per page write timing requirements
FIGURE 5A. Reset Software Data Protection Timing Sequence
System Considerations
Write Data AA
to Address
5555
Write Data 55
to Address
2AAA
Write Data A0
to Address
5555
Write Data AA
to Address
5555
Write Data 55
to Address
2AAA
Write Data 20
to Address
5555
FIGURE 5B. SOFTWARE SEQUENCE TO DEACTIVATE
SOFTWARE DATA PROTECTION
In the event the user wants to deactivate the software data
protection feature for testing or reprogramming in an
EEPROM programmer, the following six step algorithm will
reset the internal protection circuit. After tWC, the X28C512,
X28C513 will be in standard operating mode.
Because the X28C512, X28C513 are frequently used in
large memory arrays, it is provided with a two-line control
architecture for both read and write operations. Proper
usage can provide the lowest possible power dissipation and
eliminate the possibility of contention where multiple I/O pins
share the same bus.
To gain the most benefit, it is recommended that CE be
decoded from the address bus and be used as the primary
device selection input. Both OE and WE would then be
common among all devices in the array. For a read operation
this assures that all deselected devices are in their standby
mode and that only the selected device(s) is/are outputting
data on the bus.
Because the X28C512, X28C513 have two power modes,
(standby and active), proper decoupling of the memory array
is of prime concern. Enabling CE will cause transient current
spikes. The magnitude of these spikes is dependent on the
output capacitive loading of the I/Os. Therefore, the larger
the array sharing a common bus, the larger the transient
spikes. The voltage peaks associated with the current
transients can be suppressed by the proper selection and
placement of decoupling capacitors. As a minimum, it is
recommended that a 0.1µF high frequency ceramic
capacitor be used between VCC and VSS at each device.
Depending on the size of the array, the value of the capacitor
may have to be larger.
In addition, it is recommended that a 4.7µF electrolytic bulk
capacitor be placed between VCC and VSS for each 8
devices employed in the array. This bulk capacitor is
employed to overcome the voltage droop caused by the
inductive effects of the PC board traces.
Note: Once initiated, the sequence of write operations
should not be interrupted.
9
FN8106.2
June 7, 2006
X28C512, X28C513
Active Supply Current vs Ambient Temperature
14
ICC (RD) by Temperature Over Frequency
70
VCC = 5V
12
-55°C
+25°C
+125°C
50
11
10
40
30
9
8
-55
5.0 VCC
60
ICC (mA)
ICC (mA)
13
+35
-10
+80
+125
Ambient Temperature (°C)
20
10
0
Standby Supply Current vs Ambient Temperature
0.24
3
6
9
12
15
Frequency (MHz)
VCC = 5V
0.22
ISB (mA)
0.2
0.18
0.16
0.14
0.12
0.1
-55
+35
-10
+80
+125
Ambient Temperature (°C)
10
FN8106.2
June 7, 2006
X28C512, X28C513
Absolute Maximum Ratings
Recommended Operating Conditions
Temperature under bias
X28C512, X28C513 . . . . . . . . . . . . . . . . . . . . . . . .-10°C to +85°C
X28C512I/513I . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +135°C
X28C512M/513M . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +135°C
Storage temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Voltage on any pin with respect to VSS . . . . . . . . . . . . . . -1V to +7V
D.C. output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA
Lead temperature (soldering, 10s). . . . . . . . . . . . . . . . . . . . . . 300°C
Temperature Range
Commercial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Industrial. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
Military . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to +125°C
Supply Voltage Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5V ±10%
CAUTION: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional
operation of the device (at these or any other conditions above those listed in the operational sections of this specification) is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
DC Electrical Specifications
SYMBOL
Over recommended operating conditions, unless otherwise specified.
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
ICC
VCC current (active) (TTL inputs)
CE = OE = VIL, WE = VIH, All I/O’s = open, address
inputs = 0.4V/2.4V Levels @ f = 5MHz
50
mA
ISB1
VCC current (standby) (TTL inputs)
CE = VIH, OE = VIL, All I/O’s = open, other inputs = VIH
3
mA
ISB2
VCC current (standby) (CMOS inputs)
CE = VCC - 0.3V, OE = VIL, All I/O’s = Open, Other Inputs
= VIH
500
µA
ILI
Input leakage current
VIN = VSS to VCC
10
µA
ILO
Output leakage current
VOUT = VSS to VCC, CE = VIH
10
µA
VlL
(Note 1)
Input LOW voltage
-1
0.8
V
VIH
(Note 1)
Input HIGH voltage
2
VCC + 1
V
VOL
Output LOW voltage
IOL = 2.1mA
0.4
V
VOH
Output HIGH voltage
IOH = -400µA
2.4
V
NOTE:
1. VIL min. and VIH max. are for reference only and are not tested.
Power-Up Timing
SYMBOL
PARAMETER
MAX
UNIT
tPUR (Note 2)
Power-up to read operation
100
µs
tPUW (Note 2)
Power-up to write operation
5
ms
Capacitance
TA = +25°C, f = 1MHz, VCC = 5V
SYMBOL
PARAMETER
TEST CONDITIONS
MAX
UNIT
CI/O (Note 2)
Input/output capacitance
VI/O = 0V
10
pF
CIN (Note 2)
Input capacitance
VIN = 0V
10
pF
Endurance and Data Retention
PARAMETER
MIN
MAX
UNIT
Endurance
10,000
Cycles per byte
Endurance
100,000
Cycles per page
Data retention
100
Years
NOTE:
2. This parameter is periodically sampled and not 100% tested.
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FN8106.2
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X28C512, X28C513
Equivalent A.C. Load Circuit
A.C. Conditions of Test
Input pulse levels
0V to 3V
Input rise and fall times
10ns
Input and output timing levels
1.5V
5V
1.92kΩ
Mode Selection
Output
CE
OE
WE
MODE
I/O
POWER
L
L
H
Read
DOUT
Active
L
H
L
Write
DIN
Active
H
X
X
Standby and write
inhibit
High Z
Standby
—
—
—
—
X
L
X
Write inhibit
X
X
H
Write inhibit
12
1.37KΩ
100pF
Symbol Table
WAVEFORM
INPUTS
OUTPUTS
Must be
steady
Will be
steady
May change
from LOW
to HIGH
Will change
from LOW
to HIGH
May change
from HIGH
to LOW
Will change
from HIGH
to LOW
Don’t Care:
Changes
Allowed
Changing:
State Not
Known
N/A
Center Line
is High
Impedance
FN8106.2
June 7, 2006
X28C512, X28C513
AC Electrical Specifications
SYMBOL
Over the recommended operating conditions, unless otherwise specified.
PARAMETER
X28C512-90
X28C512-12
X28C512-15
X28C512-20
X28C512-25
X28C513-90
X28C513-12
X28C513-15
X28C513-20
X28C513-25
MIN
MIN
MIN
MIN
MIN
MAX
MAX
MAX
MAX
MAX
UNIT
READ CYCLE LIMITS
tRC
Read cycle time
90
120
150
200
250
ns
tCE
Chip enable access time
90
120
150
200
250
ns
tAA
Address access time
90
120
150
200
250
ns
tOE
Output enable access time
40
50
50
50
50
ns
tLZ
(Note 3)
CE LOW to active output
0
0
0
0
0
ns
tOLZ
(Note 3)
OE LOW to active output
0
0
0
0
0
ns
tHZ
(Note 3)
CE HIGH to high Z output
40
50
50
50
50
ns
tOHZ
(Note 3)
OE HIGH to high Z output
40
50
50
50
50
ns
tOH
Output hold from address change
0
0
0
0
0
ns
Read Cycle
tRC
Address
tCE
CE
tOE
OE
VIH
WE
tOLZ
tOHZ
tLZ
Data I/O
tOH
tHZ
HIGH Z
Data Valid
Data Valid
tAA
NOTE:
3. tLZ min., tHZ, tOLZ min., and tOHZ are periodically sampled and not 100% tested. tHZ max. and tOHZ max. are measured, with CL = 5pF from the
point when CE or OE return HIGH (whichever occurs first) to the time when the outputs are no longer driven.
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FN8106.2
June 7, 2006
X28C512, X28C513
Write Cycle Limits
SYMBOL
tWC (Note 4)
PARAMETER
MIN
Write cycle time
MAX
UNIT
10
ms
tAS
Address setup time
0
ns
tAH
Address hold time
50
ns
tCS
Write setup time
0
ns
tCH
Write hold time
0
ns
tCW
CE pulse width
100
ns
tOES
OE HIGH setup time
10
ns
tOEH
OE HIGH hold time
10
ns
tWP
WE pulse width
100
ns
WE High recovery
100
ns
tWPH
tDV
Data valid
1
tDS
Data setup
50
ns
tDH
Data hold
0
ns
tDW
Delay to next write
10
µs
tBLC
Byte load cycle
0.2
100
µs
µs
WE Controlled Write Cycle
tWC
Address
tAS
tAH
tCS
tCH
CE
OE
tOES
tOEH
tWP
WE
tDV
Data In
Data Valid
tDH
tDS
HIGH Z
Data Out
NOTE:
4. tWC is the minimum cycle time to be allowed from the system perspective unless polling techniques are used. It is the maximum time the device
requires to complete the internal write operation.
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FN8106.2
June 7, 2006
X28C512, X28C513
CE Controlled Write Cycle
tWC
Address
tAS
tAH
tCW
CE
tWPH
tOES
OE
tOEH
tCS
tCH
WE
tDV
Data Valid
Data In
tDS
tDH
HIGH Z
Data Out
Page Write Cycle
OE
(Note 5)
CE
tWP
tBLC
WE
tWPH
Address*
(Note 6)
Last Byte
I/O
Byte 0
Byte 1
Byte 2
Byte n
Byte n+1
Byte n+2
tWC
*For each successive write within the page write operation, A7-A15 should be the same or
writes to an unknown address could occur.
NOTES:
5. Between successive byte writes within a page write operation, OE can be strobed LOW: e.g. this can be done with CE and WE HIGH to fetch
data from another memory device within the system for the next write; or with WE HIGH and CE LOW effectively performing a polling operation.
6. The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform to either the
CE or WE controlled write cycle timing.
15
FN8106.2
June 7, 2006
X28C512, X28C513
DATA Polling Timing Diagram (Note 7)
Address
An
An
An
CE
WE
tOEH
tOES
OE
tDW
DIN = X
I/O7
DOUT = X
DOUT = X
tWC
Toggle Bit Timing Diagram
CE
WE
tOES
tOEH
OE
tDW
I/O6
HIGH Z
*
*
tWC
*Starting and ending state will vary, depending upon actual tWC.
NOTE:
7. Polling operations are by definition read cycles and are therefore subject to read cycle timings.
16
FN8106.2
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X28C512, X28C513
Packaging Information
32-Lead Hermetic Dual In-Line Package Type D
1.690 (42.95)
Max.
0.610 (15.49)
0.500 (12.70)
Pin 1
0.005 (0.13) Min.
0.100 (2.54) Max.
Seating
Plane
0.232 (5.90) Max.
0.060 (1.52)
0.015 (0.38)
0.150 (3.81) Min.
0.200 (5.08)
0.125 (3.18)
0.110 (2.79)
0.090 (2.29)
Typ. 0.100 (2.54)
0.065 (1.65)
0.033 (0.84)
Typ. 0.055 (1.40)
0.023 (0.58)
0.014 (0.36)
Typ. 0.018 (0.46)
0.620 (15.75)
0.590 (14.99)
Typ. 0.614 (15.60)
0.015 (0.38)
0.008 (0.20)
0°
15°
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
17
FN8106.2
June 7, 2006
X28C512, X28C513
Packaging Information
32-Pad Ceramic Leadless Chip Carrier Package Type E
0.300 (7.62)
BSC
0.150 (3.81) BSC
0.015 (0.38)
0.020 (0.51) x 45° Ref.
0.003 (0.08)
0.095 (2.41)
0.075 (1.91)
Pin 1
0.022 (0.56)
0.006 (0.15)
DIA.
0.055 (1.39)
0.200 (5.08)
BSC
0.045 (1.14)
0.015 (0.38)
Min.
0.028 (0.71)
0.022 (0.56)
0.050 (1.27) BSC
(32) Plcs.
TYP. (4) PLCS.
0.040 (1.02) x 45° Ref.
Typ. (3) Plcs.
0.088 (2.24)
0.458 (11.63)
0.442 (11.22)
0.120 (3.05)
0.458 (11.63)
0.050 (1.27)
0.060 (1.52)
--
0.560 (14.22)
0.558 (14.17)
0.540 (13.71)
--
0.400 (10.16)
BSC
Pin 1 Index Corner
NOTE:
1. ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
2. TOLERANCE: ±1% NLT ±0.005 (0.127)
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FN8106.2
June 7, 2006
X28C512, X28C513
Packaging Information
32-Lead Ceramic Flat Pack Type F
1.228 (31.19)
1.000 (25.40)
Pin 1 Index
1
0.019 (0.48)
0.015 (0.38)
32
0.050 (1.27) BSC
0.830 (21.08) Max.
0.045 (1.14) Max.
0.005 (0.13) Min.
0.440 (11.18)
0.430 (10.93)
0.007 (0.18)
0.004 (0.10)
0.120 (3.05)
0.090 (2.29)
0.370 (9.40)
0.270 (6.86)
0.347 (8.82)
0.330 (8.38)
0.026 (0.66)
Min.
0.030 (0.76)
Min.
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
19
FN8106.2
June 7, 2006
X28C512, X28C513
Plastic Leaded Chip Carrier Packages (PLCC)
0.042 (1.07)
0.048 (1.22)
PIN (1)
IDENTIFIER
N32.45x55 (JEDEC MS-016AE ISSUE A)
0.042 (1.07)
0.056 (1.42)
0.004 (0.10)
0.050 (1.27) TP
0.025 (0.64)
R
0.045 (1.14)
ND
CL
C
D2/E2
C
L
E1 E
D2/E2
NE
VIEW “A”
A1
A
D1
D
0.015 (0.38)
MIN
SEATING
-C- PLANE
0.020 (0.51) MAX
3 PLCS
0.026 (0.66)
0.032 (0.81)
0.050 (1.27)
MIN
32 LEAD PLASTIC LEADED CHIP CARRIER PACKAGE
INCHES
MILLIMETERS
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.125
0.140
3.18
3.55
-
A1
0.060
0.095
1.53
2.41
-
D
0.485
0.495
12.32
12.57
-
D1
0.447
0.453
11.36
11.50
3
D2
0.188
0.223
4.78
5.66
4, 5
E
0.585
0.595
14.86
15.11
-
E1
0.547
0.553
13.90
14.04
3
E2
0.238
0.273
6.05
6.93
4, 5
N
28
28
6
ND
7
7
7
NE
9
9
7
Rev. 0 7/98
NOTES:
1. Controlling dimension: INCH. Converted millimeter dimensions are not necessarily exact.
2. Dimensions and tolerancing per ANSI Y14.5M-1982.
0.013 (0.33)
0.021 (0.53)
0.025 (0.64)
MIN
(0.12)
M A S -B S D S
0.005
VIEW “A” TYP.
3. Dimensions D1 and E1 do not include mold protrusions. Allowable mold protrusion is 0.010 inch (0.25mm) per side.
Dimensions D1 and E1 include mold mismatch and are measured at the extreme material condition at the body parting
line.
4. To be measured at seating plane -C- contact point.
5. Centerline to be determined where center leads exit plastic
body.
6. “N” is the number of terminal positions.
7. ND denotes the number of leads on the two shorts sides of the
package, one of which contains pin #1. NE denotes the number of leads on the two long sides of the package.
20
FN8106.2
June 7, 2006
X28C512, X28C513
Ceramic Pin Grid Array Package (CPGA)
G36.760x760A
36 LEAD CERAMIC PIN GRID ARRAY PACKAGE
15
17
19
21
22
A
13
14
12
11
16
18
20
23
24
25
26
0.008 (0.20)
0.050 (1.27)
A
10
9
27
28
8
7
29
30
6
Typ. 0.180 (.010)
(4.57 ± .25)
4 Corners
5
2
36
34
32
4
3
1
35
33
31
NOTE: Leads 5, 14, 23, & 32
Typ. 0.100 (2.54)
All Leads
Typ. 0.180 (.010)
(4.57 ± .25)
4 Corners
0.120 (3.05)
0.100 (2.54)
0.072 (1.83)
0.062 (1.57)
Pin 1 Index
0.770 (19.56)
0.750 (19.05)
SQ
A
0.020 (0.51)
0.016 (0.41)
A
0.185 (4.70)
0.175 (4.45)
NOTE: All dimensions in inches (in parentheses in millimeters).
Rev. 0 12/05
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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21
FN8106.2
June 7, 2006
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