CGHV59070
70 W, 4.4 - 5.9 GHz, 50 V, RF Power GaN HEMT
Description
Cree’s CGHV59070 is an internally matched gallium nitride
(GaN) high electron mobility transistor (HEMT). The CGHV59070,
operating from a 50 volt rail, offers a general purpose, broadband
solution to a variety of RF and microwave applications. The good
efficiency, high gain and wide bandwidth capabilities make
the CGHV59070 ideal for linear applications such as wireless
infrastructure and for compressed amplifier circuits. The
transistor is available in a flange and pill package.
Package Type: 440224, 440170
PN’s: CGHV59070F, CGHV59070P
Typical Performance Over 4.8 - 5.9 GHz (TC = 25˚C)
Parameter
4.8 GHz
5.0 GHz
5.2 GHz
5.4 GHz
5.6 GHz
5.8 GHz
5.9 GHz
Units
Power Gain at 50 V
13.7
14.2
14.5
14.6
14.3
13.7
13.3
dB
Output Power at 50 V
84
93
101
102
95
84
76
W
Drain Efficiency at 50 V
55
56
57
56
54
50
48
%
Note: Measured in CGHV59070F-AMP (838269) under 100 μS pulse width, 10% duty cycle, Pin = 35.5 dBm (3.5 W)
Features
Applications
•
•
•
•
•
•
•
•
•
•
•
•
•
4.4 - 5.9 GHz Operation
90 W POUT typical at 50 V
14 dB Power Gain
55% Drain Efficiency
Internally Matched
Wireless Infrastructure
Marine Radar
Weather Monitoring
Air Traffic Control
Maritime Vessel Traffic Control
Port Security
Troposcatter Communications
Beyond Line of Sight - BLOS
Large Signal Models Available for ADS and MWO
Rev 2.6 - August 2021
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CGHV59070
2
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
VDSS
150
Volts
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
10.4
mA
25˚C
Maximum Drain Current
IDMAX
6.3
A
25˚C
Soldering Temperature
TS
245
˚C
τ
40
in-oz
Thermal Resistance, Junction to Case
RθJC
2.99
˚C/W
85˚C, CW @ PDISS = 57 W
Thermal Resistance, Junction to Case
RθJC
0.85
˚C/W
85˚C, 100 μsec, 10% Duty Cycle @ PDISS = 70 W
Case Operating Temperature
TC
-40, +150
˚C
1
2
Screw Torque
3
3
4
Notes:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at wolfspeed.com/rf/document-library
3
Simulated for the CGHV59070F at PDISS = 57.6 CW or PDISS = 70 W Pulsed
4
See also, the Power Dissipation De-rating Curve on Page 8
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-2.8
-2.3
VDC
VDS = 10 V, ID = 10.4 mA
Saturated Drain Current2
IDS
6.8
9.7
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
125
–
–
VDC
VGS = -8 V, ID = 10.4 mA
DC Characteristics1
RF Characteristics (TC = 25˚C, F0 = 5.2-5.9 GHz unless otherwise noted)
3
Small Signal Gain
GSS
15.55
17
–
dB
VDD = 50 V, IDQ = 0.15 A, PIN = 10 dBm, Freq = 5.2 GHz
Output Power
POUT1
75.9
100
–
W
VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.2 GHz
Output Power
POUT2
75.9
100
–
W
VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.55 GHz
Output Power
POUT3
62.4
77
–
W
VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.9 GHz
Drain Efficiency
EFF1
50
55
–
%
VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.2 GHz
Drain Efficiency
EFF2
46
54
–
%
VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.55 GHz
Drain Efficiency
EFF3
40
48
–
%
VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.9 GHz
Power Gain
PG
–
14.5
–
dB
Output Mismatch Stress
VSWR
–
–
5:1
Y
VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.2 GHz
No damage at all phase angles,
VDD = 50 V, IDQ = 0.15A, PIN = 35.5 dBm Pulsed
Input Capacitance
CGS
–
36
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
109
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.26
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Dynamic Characteristics
Notes:
1
Measured on wafer prior to packaging
2
Scaled from PCM data
3
Measured in CGHV59070F-AMP
4
Drain Efficiency = POUT / PDC
Rev 2.6 - August 2021
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CGHV59070
3
Typical Performance
Figure 1. Small Signal Gain and Return Losses of
the CGHV59070-AMP vs Frequency
CGHV59070
VDD = 50S-parameter
V, IDQ = 150 mA
15
15
10
10
55
00
(dB)
Small Signal Gain, Input Return Loss,
Output
Return
Loss
(dB)Return Loss
Small Signal Gain,
Input Return
Loss,
Output
VD=50V,ID=150mA
20
20
-5
-5
-10
-10
-15
-15
S11
S11
S21
S21
-20
-20
S22
S22
-25
-25
-30
-30
4000 4200
4200 4400
4400 4600
4600 4800
4800 5000
5000 5200
4000
5200 5400
5400 5600
5600 5800
5800 6000
6000 6200
6200 6400
6400 6600
6600 6800
6800 7000
7000
Frequency (MHz)
Frequency (MHz)
Figure 2. Power Gain, Drain Efficiency, and Output Power vs Frequency measured
in Amplifier Circuit CGHV59070P-AMP
CGHV59070
VDD = 50 V, IDQ = 150 mA, PIN =Pout
35.5
Pulse
Width
= 100
(W),dBm,
Drain EFF
& GAIN
@ PIN 35.5
dBm μsec, Duty Cycle = 10%
VD=50V,ID=150mA
Pulsed 100uS,10%
Output Power (W), Power Gain (dB),
Efficiency (%)
Output Power (W), Power Gain (dB), Efficiency (%)
110
110
100
100
90
90
80
80
70
70
60
60
50
50
40
40
P GAIN
(dB)(dB)
P GAIN
EFF
(%)(%)
EFF
30
30
Pout
(W)(W)
Pout
20
20
10
10
00
4.7
4.7
4.8
4.8
4.9
4.9
5.0
5.0
5.1
5.1
5.2
5.2
5.3
5.4
5.5
5.3
5.4 5.5
Frequency (GHz)
5.6
5.6
5.7
5.7
5.8
5.8
5.9
5.9
6.0
6.0
Frequency (GHz)
Rev 2.6 - August 2021
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CGHV59070
4
Typical Performance
Figure 3. Maximum Available Gain and K Factor of the CGHV59070
Gmax
VDD = 50
V, I&DQK-factor
= 150 mA
VD=50V, ID=150 mA
50
50
10
10
88
KK
77
30
30
66
25
25
55
20
20
44
15
15
33
10
10
22
55
11
Gmax (dB)
35
35
00
00
1000
1000
2000
2000
3000
3000
4000
4000
Frequency (MHz)
5000
5000
6000
6000
7000
7000
K
40
40
Gmax (dB)
99
max
GGmax
K
45
45
00
8000
8000
Frequency (MHz)
Figure 4. Power Gain, Drain Efficiency and Output Power vs Input Power of the CGHV59070
CGHV59070
VDD = 50 V, IDQ = 150 mA,
Pulse Width
= 100 μsec, Duty Cycle = 10%
Gain & Drain Efficiency and POUT vs Input Power
VD=50V,ID=150mA, Pulsed 100uS, 10%
60
60
Pout
Gain
Eff
50
50
80
80
40
40
60
60
30
30
40
40
20
20
20
20
10
10
00
16
16
18
18
20
20
22
22
24
24
26
26
28
28
Input Power (dBm)
30
30
32
32
34
34
Drain Efficiency (%)
100
100
5.55GHz,
5.90GHz,
5.55GHz,
PoutPout 5.90GHz,
Pout
5.55GHz,
5.90GHz,
5.55GHz,
GainGain 5.90GHz,
Gain
5.55GHz,
5.90GHz,
5.55GHz,
Eff Eff 5.90GHz,
Eff
Drain Efficiency (%)
5.20GHz,
Pout
5.20GHz, Pout
5.20GHz,
Gain
5.20GHz, Gain
5.20GHz,
Eff
5.20GHz, Eff
Output Power (W), Gain (dB)
Output Power (W), Gain (dB)
120
120
00
36
36
Input Power (dBm)
Rev 2.6 - August 2021
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CGHV59070
5
Typical Performance
Figure 5. Gain vs Output Power Measured in CGHV59070F-AMP4
VDD = 50 V, IDQ = 75 mA
Gain [dB] vs Pout [dBm]
20
20
18
18
Gain (dB)
16
16
14
14
12
12
4800
4800
4900
4900
10
10
88
5000
5000
15
15
20
20
25
25
30
30
35
35
40
40
45
45
50
50
55
55
Output Power (dBm)
Figure 6. Input Return Loss vs Output Power Measured in CGHV59070F-AMP4
VDD = 50 V, IDQ = 75 mA
IRL [dB] vs Pout [dBm]
0
4800
4900
-5
5000
IRL (dB)
-10
-15
-20
-25
15
20
25
30
35
40
45
50
55
Output Power (dBm)
Rev 2.6 - August 2021
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CGHV59070
6
Typical Performance
Figure 7. Gain vs Frequency Measured in CGHV59070F-AMP4
VDD = 50 V, IDQ = 75 mA, POUT = 42 dBm
Gain [dB] vs freq.[MHz]
19.0
18.5
Gain
18.0
17.5
Gain (dB)
17.0
K
16.5
16.0
15.5
15.0
14.5
14.0
4750
4800
4850
4900
4950
5000
5050
Frequency (MHz)
Figure 8. Drain Efficiency vs Frequency Measured in CGHV59070F-AMP4
VDD = 50 V, IDQ = 75 mA, POUT = 42 dBm
Eff. [%] vs Frequency [MHz]
38
37
Drain
Dr eff Efficiency
Drain Efficiency (%)
35
%
Drain Efficiency (%)
36
34
33
32
31
30
29
28
4750
4800
4850
4900
4950
5000
5050
Frequency (MHz)
Rev 2.6 - August 2021
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CGHV59070
7
Typical Performance
Figure 9. ACLR vs Frequency Measured in CGHV59070F-AMP4
VDD = 50 V, IDQ = 75 mA, POUT = 42 dBm, WCDMA 7.5 dB PAR Signal
-22
-24
Lower ACLR
Low
Up
Upper ACLR
-28
K
ACLR (dBc)
-26
-30
-32
-34
4750
4800
4850
4900
4950
5000
5050
Frequency (MHz)
Rev 2.6 - August 2021
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CGHV59070
8
CGHV59070 Power Dissipation De-Rating Curve, Pulsed & CW
(Pulsed Width = 100 μS, Duty Cycle = 10%)
80
Pulsed
CW
70
Power Dissipation (W)
Power Dissipation (W)
60
50
40
Note 1
30
20
10
0
0
25
50
75
100
125
150
175
200
225
250
Flange Temperature (°C)
Flange Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2)
Simulated Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
4400
2.6 - j12.9
14.0 - j6.9
4600
3.8 - j14.2
15.0 - j6.7
4800
5.8 - j15.3
16.0 - j7.0
5000
8.8 - j15.4
16.7 - j8.0
5200
8.8 - j14.7
17.1 - j9.1
5300
8.5 - j14.5
16.9 - j10.0
5400
8.1 - j14.2
16.5 - j10.7
5500
7.8 - j13.9
15.4 - j11.4
5600
7.5 - j13.6
15.4 - j12.0
5700
7.2 - j13.3
14.6 - j12.5
5800
6.9 - j13.3
13.8 - j12.8
5900
6.6 - j12.7
12.9 - j13.1
Note 1. VDD = 50 V, IDQ = 150 mA in the 440224 package
Note 2. Optimized for power gain, PSAT and PAE
Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability
Rev 2.6 - August 2021
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CGHV59070
9
CGHV59070-AMP Demonstration Amplifier Circuit Outline
CGHV59070-AMP Demonstration Amplifier Circuit Schematic
1.3
Rev 2.6 - August 2021
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CGHV59070
10
CGHV59070-AMP Demonstration Amplifier Circuit
CGHV59070-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 15,OHM, +/- 1%, 1/16W, 0402
1
R2
RES,1/16W,0603,1%,10.0 OHMS
1
C1
CAP, 4.7 pF,+/-0.1pF, 0603, ATC600S
1
C10
CAP, 1.3 pF,+/-0.1pF, 0603, ATC600S
1
C3,C11
CAP, 2.0 pF,+/-0.1pF, 0603, ATC600S
1
C2
CAP, 2.0 pF, +/- 0.05 pF, 0402, ATC600L
1
C4,C12
CAP, 10pF,+/-5%, 0603, ATC600S
2
C5,C13
CAP, 470PF, 5%, 100V, 0603, X
2
C6,C14
CAP, 33000PF, 0805,100V, X7R
2
C15
CAP, 1.0UF, 100V, 10%, X7R, 1210
1
C7
CAP 10UF 16V TANTALUM
1
W1
CABLE ,18 AWG, 4.2 inch
1
C16
1
J3
CAP, 470uF, 20%, 80V, ELECT, SMD Size K
CONN, SMA, PANEL MOUNT JACK, FLANGE,
4-HOLE
HEADER RT>PLZ .1CEN LK 9POS
J4
CONNECTOR ; SMB, Straight, JACK,SMD
1
–
Taconic RF-35, PCB, 20 mil
1
Q1
CGHV59070
1
J1,J2
Rev 2.6 - August 2021
2
1
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CGHV59070
11
Product Dimensions CGHV59070P (Package Type — 440170)
Product Dimensions CGHV59070F (Package Type — 440224)
Rev 2.6 - August 2021
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CGHV59070
12
Part Number System
CGHV59070F
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Table 1.
Parameter
Value
Units
Upper Frequency1
5.9
GHz
Power Output
70
W
Package
Flange/Pill
-
Note1: Alpha characters used in frequency code indicate a value
greater than 9.9 GHz. See Table 2 for value.
Table 2.
Rev 2.6 - August 2021
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
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CGHV59070
13
Product Ordering Information
Order Number
Description
Unit of Measure
CGHV59070F
GaN HEMT
Each
CGHV59070P
GaN HEMT
Each
CGHV59070F-AMP
Test board with GaN HEMT installed
Each
Rev 2.6 - August 2021
Image
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CGHV59070
14
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@cree.com
Notes
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in different applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury
or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
© 2016-2021 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc.
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