CGHV35150F

CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Description Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/ metal flange and pill package. Package Types: 440193 / 440206 PNs: CGHV35150F / CGHV35150P Typical Performance 3.1 - 3.5 GHz (TC = 85˚C) Parameter 3.1 GHz 3.2 GHz 3.3 GHz 3.4 GHz 3.5 GHz Units Output Power 180 180 180 170 150 W Gain 13.5 13.5 13.5 13.3 12.7 dB Drain Efficiency 50 49 50 49 48 % Note: Measured in the CGHV35150-AMP application circuit, under 300 μs pulse width, 20% duty cycle, PIN = 39 dBm Features • • • • • • • Rated Power = 150 W @ TCASE = 85°C Operating Frequency = 2.9 - 3.5 GHz Transient 100 μsec - 300 μsec @ 20% Duty Cycle 13 dB Power Gain @ TCASE = 85°C 50% Typical Drain Efficiency @ TCASE = 85°C Input Matched 250 V) II (200 V to 500 V) JEDEC JESD22 A114-D JEDEC JESD22 C101-C Rev 1.3 - September 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV35150 5 CGHV35150 Power Dissipation De-rating Curve Figure 5. CGHV35150 Transient Power Dissipation De-Rating Curve CGHV35150F Transient Power Dissipation De-Rating Curve 140 Power Dissipation (W) Power Dissipation (W) 120 100 80 60 Note 1 Flange 40 Pill 20 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Temperature (See Page 2) CGHV35150-AMP Application Circuit Bill of Materials Designator Description Qty R1 RES, 511 OHM, +/- 1%, 1/16W, 0603 1 R2 RES, 5.1 OHM, +/- 1%, 1/16W, 0603 1 C1,C7,C8 CAP, 10pF, +/- 1%, 250V, 0805 3 C2 CAP, 6.8pF, +/- 0.25 pF,250V, 0603 1 C3 CAP, 10.0pF, +/-5%,250V, 0603 1 C4,C9 CAP, 470PF, 5%, 100V, 0603, X 2 C5,C10 CAP, 33000PF, 0805,100V, X7R 1 C6 CAP 10uF 16V TANTALUM 1 C11 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C12 CAP, 33 UF, 20%, G CASE 1 C13 CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC 1 J1,J2 CONN, SMA, PANEL MOUNT JACK, FL 2 J3 HEADER RT>PLZ .1CEN LK 9POS 1 J4 CONNECTOR ; SMB, Straight, JACK,SMD 1 W1 CABLE ,18 AWG, 4.2 1 PCB, RO4350, 20 MIL THK, CGHV35150 1 CGHV35150 1 Q1 Rev 1.3 - September 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV35150 6 CGHV35150-AMP Application Circuit Outline CGHV35150-AMP Application Circuit Schematic Rev 1.3 - September 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV35150 7 Product Dimensions CGHV35150F (Package Type — 440193) Product Dimensions CGHV35150P (Package Type — 440206) Rev 1.3 - September 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV35150 8 Part Number System CGHV35150F Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Table 1. Parameter Value Units Upper Frequency1 3.5 GHz Power Output 150 W Package F = Flange, P = Pill - Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value Table 2. Rev 1.3 - September 2020 Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV35150 9 Product Ordering Information Order Number Description Unit of Measure CGHV35150F GaN HEMT Each CGHV35150P GaN HEMT Each CGHV35150F-AMP Test board with GaN HEMT installed Each Rev 1.3 - September 2020 Image 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV35150 10 For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. © 2019 - 2020 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev 1.3 - September 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com