CGHV96100F2

CGHV96100F2 100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Cree’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ ceramic flanged package for optimal electrical and thermal performance. PN: CGHV96100F2 Package Type: 440217 Typical Performance Over 8.4 - 9.6 GHz (TC = 25˚C) Parameter 8.4 GHz 8.8 GHz 9.0 GHz 9.2 GHz 9.4 GHz 9.6 GHz Units Linear Gain 13.8 12.8 13.0 12.4 11.8 11.4 dB Output Power 171 163 160 150 137 131 W Power Gain 10.3 10.1 10.0 9.7 9.4 9.1 dB Power Added Efficiency 45.5 42.8 41.5 39.2 35.5 35.4 % Note: Measured in CGHV96100F2-TB (838179) under 100 μS pulse width, 10% duty, Pin 42.0 dBm (16 W) Features Applications • • • • • • • • • • • 8.4 - 9.6 GHz Operation 145 W POUT typical 10 dB Power Gain 40% Typical PAE 50 Ohm Internally Matched PLZ .1CEN LK 9POS 1 J4 CONNECTOR, SMB, STRAIGHT JACK 1 - PCB, TEST FIXTURE, TACONICS RF35P, 20 MIL THK, 440210 PKG 1 - 2-56 SOC HD SCREW 1/4 SS 4 - #2 SPLIT LOCKWASHER SS 4 Q1 CGHV96100F2 1 CGHV96100F2-AMP Demonstration Amplifier Circuit Rev 3.1 - April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV96100F2 8 CGHV96100F2-AMP Demonstration Amplifier Circuit Schematic CGHV96100F2-AMP Demonstration Amplifier Circuit Outline Rev 3.1 - April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV96100F2 9 Power dissipation derating curve vs. Max TCase CGHV96100F2 Power Dissipation De-ratingCW Curve & Pulse (100 uS/ 10% duty) 260 240 220 Power Dissipation (W) Power Dissipation (W) 200 180 Pulse 100uS / 10% 160 140 Note 1 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Maximum Case Temperature (C) 200 225 250 Maximum Case Temperature (°C) Note. Shaded area exceeds Maximum Case Operating Temperature (See Page 2) CGHV96100F2 Transient Curve CGHV96100F 6 W/mm 1.2 1.1 ThetaJC ((⁰C/W) ThetaJC (⁰C/W) 1 0.9 0.8 0.7 10% Duty Cycle 0.6 0.5 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 Time (sec) Time (sec) Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Rev 3.1 - April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV96100F2 10 Product Dimensions CGHV96100F2 (Package Type — 440217) Rev 3.1 - April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV96100F2 11 Part Number System CGHV96100F2 Package, Power Test Power Output (W) Upper Frequency (GHz) Cree GaN HEMT High Voltage Table 1. Parameter Value Units Upper Frequency1 9.6 GHz Power Output 100 W Package Flange - Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Table 2. Rev 3.1 - April 2020 Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV96100F2 12 Product Ordering Information Order Number Description Unit of Measure CGHV96100F2 GaN HEMT Each CGHV96100F2-AMP Test board with GaN HEMT Each Rev 3.1 - April 2020 Image 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV96100F2 13 For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. © 2013 - 2020 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev 3.1 - April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com