HGTG30N60B3

HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT Features The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies. • 30 A, 600 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 1.45 V @ IC = 30 A • Typical Fall Time. . . . . . . . 90ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss Formerly Developmental Type TA49170. Packaging Ordering Information PART NUMBER HGTG30N60B3 JEDEC STYLE TO-247 PACKAGE TO-247 BRAND G30N60B3 NOTE: When ordering, use the entire part number. Symbol C G C E TO-247 G E ©2001 Fairchild Semiconductor Corporation HGTG30N60B3 Rev. C1 1 www.fairchildsemi.com HGTG30N60B3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Ratings UNIT 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 60 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 30 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 220 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES 20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM 30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 60 A at 600 V Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 208 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC Short Circuit Withstand Time (Note 2) at VGE = 12 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 4 s Short Circuit Withstand Time (Note 2) at VGE = 10 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 s CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360 V, TJ = 125oC, RG = 3  Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Emitter Breakdown Voltage BVCES IC = 250 A, VGE = 0 V 600 - - V Emitter to Collector Breakdown Voltage BVECS IC = -10 mA, VGE = 0 V 20 - - V TC = 25oC - - 250 A TC = 150oC TC = 25oC TC = 150oC - - 3.0 mA - 1.45 1.9 V - 1.7 2.1 V 4.2 5.0 6.0 V - - 250 nA VCE (PK) = 480 V 200 - - A VCE (PK) = 600 V 60 - - A IC = IC110, VCE = 0.5 BVCES - 7.2 - V IC = IC110, VCE = 0.5 BVCES VGE = 15 V - 170 190 nC VGE = 20 V - 230 250 nC - 36 - ns - 25 - ns - 137 - ns - 58 - ns - 500 - J Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA ICES VCE(SAT) VGE(TH) VCE = BVCES IC = IC110, VGE = 15 V IC = 250 A, VCE = VGE IGES VGE = 20 V SSOA TJ = 150oC, RG = 3  VGE = 15 V, L = 100 H Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time VGEP QG(ON) td(ON)I trI td(OFF)I tfI IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15 V RG= 3  L = 1 mH Test Circuit (Figure 17) Turn-On Energy (Note 4) EON1 Turn-On Energy (Note 4) EON2 - 550 800 J Turn-Off Energy (Note 3) EOFF - 680 900 J ©2001 Fairchild Semiconductor Corporation HGTG30N60B3 Rev. C1 2 www.fairchildsemi.com HGTG30N60B3 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TEST CONDITIONS MIN TYP MAX UNIT - 32 - ns - 24 - ns - 275 320 ns - 90 150 ns - 500 - J J IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15 V RG= 3  L = 1 mH Test Circuit (Figure 17) Turn-On Energy (Note 4) EON1 Turn-On Energy (Note 4) EON2 - 1300 1550 Turn-Off Energy (Note 3) EOFF - 1600 1900 J Thermal Resistance Junction To Case RJC - - 0.6 oC/W NOTES: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. Unless Otherwise Specified ICE, COLLECTOR TO EMITTER CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 60 VGE = 15V 50 40 30 20 10 0 25 75 50 100 125 150 225 TJ = 150oC, RG = 3, VGE = 15V, L =100H 200 175 150 125 100 75 50 25 0 0 TC , CASE TEMPERATURE (oC) tSC , SHORT CIRCUIT WITHSTAND TIME (s) fMAX, OPERATING FREQUENCY (kHz) 10 TC fMAX1 = 0.05 / (td(OFF)I + td(ON)I) o fMAX2 = (PD - PC) / (EON2 + EOFF) 75 C oC 75 PC = CONDUCTION DISSIPATION 110oC (DUTY FACTOR = 50%) 110oC RØJC = 0.6oC/W, SEE NOTES VGE 15V 10V 15V 10V 0.1 5 10 20 40 60 FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 500 400 600 700 20 500 VCE = 360V, RG = 3, TJ = 125oC 18 450 400 16 ISC 14 350 12 300 10 250 tSC 200 8 150 6 10 11 12 13 14 15 VGE , GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) HGTG30N60B3 Rev. C1 300 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA TJ = 150oC, RG = 3, L = 1mH, V CE = 480V 1 200 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 100 100 ISC, PEAK SHORT CIRCUIT CURRENT (A) Typical Performance Curves FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 3 www.fairchildsemi.com HGTG30N60B3 Unless Otherwise Specified (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 225 DUTY CYCLE