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HGTG7N60A4D, HGTP7N60A4D,
HGT1S7N60A4DS
Data Sheet
January 2005
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG7N60A4D, HGTP7N60A4D and
HGT1S7N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49331. The diode
used in anti-parallel is the development type TA49370.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Features
• >100kHz Operation At 390V, 7A
• 200kHz Operation At 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
E
C
G
Formerly Developmental Type TA49333.
Ordering Information
PART NUMBER
COLLECTOR
(FLANGE)
PACKAGE
BRAND
HGTG7N60A4D
TO-247
G7N60A4D
HGTP7N60A4D
TO-220AB
G7N60A4D
HGT1S7N60A4DS
TO-263AB
G7N60A4D
JEDEC TO-220AB
E
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.,
HGT1S7N60A4DS9A.
C
G
Symbol
COLLECTOR
(FLANGE)
C
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
©2005 Fairchild Semiconductor Corporation
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
ALL TYPES
UNITS
600
V
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
34
A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
14
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
56
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
±30
V
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
35A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
125
W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
300
260
oC
oC
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified
PARAMETER
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
SYMBOL
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
TEST CONDITIONS
MIN
TYP
MAX
UNITS
600
-
-
V
-
-
250
µA
-
-
2
mA
-
1.9
2.7
V
-
1.6
2.2
V
4.5
5.9
7
V
-
-
±250
nA
35
-
-
A
-
9
-
V
VGE = 15V
-
37
45
nC
VGE = 20V
-
48
60
nC
-
11
-
ns
-
11
-
ns
-
100
-
ns
-
45
-
ns
IC = 250µA, VGE = 0V
VCE = 600V
IC = 7A,
VGE = 15V
TJ = 25oC
TJ = 125oC
TJ = 25oC
TJ = 125oC
IC = 250µA, VCE = 600V
VGE = ±20V
Switching SOA
SSOA
TJ = 150oC, RG = 25Ω, VGE = 15V,
L = 100µH, VCE = 600V
Gate to Emitter Plateau Voltage
VGEP
IC = 7A, VCE = 300V
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
Turn-On Energy
EON1
Turn-On Energy
EON2
Turn-Off Energy (Note 2)
EOFF
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
td(ON)I
trI
td(OFF)I
tfI
IC = 7A,
VCE = 300V
IGBT and Diode at TJ = 25oC,
ICE = 7A,
VCE = 390V,
VGE = 15V,
RG = 25Ω,
L = 1mH,
Test Circuit (Figure 24)
IGBT and Diode at TJ = 125oC,
ICE = 7A,
VCE = 390V, VGE = 15V,
RG = 25Ω,
L = 1mH,
Test Circuit (Figure 24)
-
55
-
µJ
-
120
150
µJ
-
60
75
µJ
-
10
-
ns
-
7
-
ns
-
130
150
ns
-
75
85
ns
Turn-On Energy (Note 2)
EON1
-
50
-
µJ
Turn-On Energy (Note 2)
EON2
-
200
215
µJ
Turn-Off Energy (Note 3)
EOFF
-
125
170
µJ
©2005 Fairchild Semiconductor Corporation
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Diode Forward Voltage
VEC
Diode Reverse Recovery Time
trr
Thermal Resistance Junction To Case
RθJC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IEC = 7A
-
2.4
-
V
IEC = 7A, dIEC/dt = 200A/µs
-
34
-
ns
IEC = 1A, dIEC/dt = 200A/µs
-
22
-
ns
IGBT
-
-
1.0
oC/W
Diode
-
-
2.2
oC/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Unless Otherwise Specified
VGE = 15V
30
25
20
15
10
5
0
25
50
75
100
125
150
40
TJ = 150oC, RG = 25Ω, VGE = 15V, L = 100µH
30
20
10
0
100
0
TC , CASE TEMPERATURE (oC)
fMAX, OPERATING FREQUENCY (kHz)
TC
VGE
75oC 15V
200
100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 1.0oC/W, SEE NOTES
TJ = 125oC, RG = 25Ω, L = 1mH, V CE = 390V
30
5
1
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
©2005 Fairchild Semiconductor Corporation
300
400
500
600
700
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
500
200
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
20
16
140
VCE = 390V, RG = 25Ω, TJ = 125oC
120
14
ISC
12
100
10
80
8
60
tSC
6
40
20
4
10
11
12
13
14
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
35
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
15
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
30
Unless Otherwise Specified
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
25
TJ = 125oC
20
15
10
TJ = 25oC
5
0
TJ = 150oC
0
0.5
2.5
1.0
1.5
2.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
20
15
10
TJ = 125oC
5
TJ = 150oC
TJ = 25oC
0
0.5
1.0
1.5
2.0
2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
3.0
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
RG = 25Ω, L = 1mH, VCE = 390V
EOFF, TURN-OFF ENERGY LOSS (µJ)
EON2 , TURN-ON ENERGY LOSS (µJ)
25
0
400
TJ = 125oC, VGE = 12V, VGE = 15V
300
200
100
TJ = 25oC, VGE = 12V, VGE = 15V
0
2
4
6
8
10
12
ICE , COLLECTOR TO EMITTER CURRENT (A)
RG = 25Ω, L = 1mH, VCE = 390V
300
250
200
TJ = 125oC, VGE = 12V OR 15V
150
100
50
0
14
TJ = 25oC, VGE = 12V OR 15V
0
2
10
12
14
RG = 25Ω, L = 1mH, VCE = 390V
trI , RISE TIME (ns)
TJ = 125oC, VGE = 12V
TJ = 25oC, VGE = 15V
10
8
40
TJ = 25oC, VGE = 12V
12
6
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
RG = 25Ω, L = 1mH, VCE = 390V
14
4
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
td(ON)I, TURN-ON DELAY TIME (ns)
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
350
500
16
30
3.0
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
0
(Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
TJ = 25oC, VGE = 12V, VGE = 15V
30
20
10
TJ = 125oC, VGE = 15V
TJ = 125oC, VGE = 12V, VGE = 15V
0
8
0
2
4
6
8
10
12
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
©2005 Fairchild Semiconductor Corporation
14
0
2
4
6
8
10
12
14
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
180
90
td(OFF)I , TURN-OFF DELAY TIME (ns)
RG = 25Ω, L = 1mH, VCE = 390V
RG = 25Ω, L = 1mH, VCE = 390V
80
160
120
VGE = 12V, TJ = 125oC
100
70
tfI , FALL TIME (ns)
VGE = 15V, TJ = 125oC
140
VGE = 15V, TJ = 25oC
TJ = 125oC, VGE = 12V OR 15V
60
50
TJ = 25oC, VGE = 12V OR 15V
40
80
30
VGE = 12V, TJ = 25oC
60
20
0
2
4
6
8
10
12
14
0
2
ICE , COLLECTOR TO EMITTER CURRENT (A)
120
15
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
TJ = 25oC
80
TJ = 125oC
60
TJ = -55oC
40
20
0
8
7
9
11
10
12
13
14
9
VCE = 200V
6
3
0
5
400
ICE = 7A
ICE = 3.5A
0
125
TC , CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
©2005 Fairchild Semiconductor Corporation
150
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (µJ)
ICE = 14A
100
10
15
20
25
30
35
40
FIGURE 14. GATE CHARGE WAVEFORMS
600
75
14
QG , GATE CHARGE (nC)
ETOTAL = EON2 + EOFF
50
12
VCE = 400V
0
15
RG = 25Ω, L = 1mH, VCE = 390V, VGE = 15V
25
10
VCE = 600V
12
FIGURE 13. TRANSFER CHARACTERISTIC
200
8
IG(REF) = 1mA, RL = 43Ω, TJ = 25oC
VGE, GATE TO EMITTER VOLTAGE (V)
800
6
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
100
4
ICE , COLLECTOR TO EMITTER CURRENT (A)
10
TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 14A
1
ICE = 7A
ICE = 3.5A
0.1
10
100
RG, GATE RESISTANCE (Ω)
1000
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
Unless Otherwise Specified
1.4
FREQUENCY = 1MHz
C, CAPACITANCE (nF)
1.2
1.0
0.8
CIES
0.6
0.4
COES
0.2
CRES
0
0
20
(Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Typical Performance Curves
40
60
80
2.8
DUTY CYCLE < 0.5%, TJ = 25oC
PULSE DURATION = 250µs
2.6
2.4
ICE = 14A
2.2
ICE = 7A
2.0
ICE = 3.5A
1.8
9
100
10
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
13
14
15
16
100
dIEC/dt = 200A/µs
DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs
30
trr , RECOVERY TIMES (ns)
IEC , FORWARD CURRENT (A)
12
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
35
25
20
125oC
25oC
15
10
125oC trr
80
60
125oC tb
125oC ta
40
25oC trr
25oC ta
20
5
25oC tb
0
0
0
1
2
3
VEC , FORWARD VOLTAGE (V)
4
5
50
IEC = 7A, VCE = 390V
125oC tb
40
30
125oC ta
25oC ta
20
25oC tb
10
100
200
300
400
500
600
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
©2005 Fairchild Semiconductor Corporation
4
2
6
10
8
12
14
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
Qrr, REVERSE RECOVERY CHARGE (nc)
60
0
IEC , FORWARD CURRENT (A)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
trr, RECOVERY TIMES (ns)
11
VGE, GATE TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
500
VCE = 390V
125oC, IEC = 7A
400
300
125oC, IEC = 3.5A
200
25oC, IEC = 7A
100
25oC, IEC = 3.5A
0
100
200
300
400
500
600
700
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
ZθJC , NORMALIZED THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
100
0.5
0.2
0.1
10-1
t1
0.05
PD
t2
0.02
0.01
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-2 -5
10
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTG7N60A4D
90%
10%
VGE
EON2
EOFF
L = 1mH
VCE
RG = 25Ω
90%
DUT
+
-
ICE
VDD = 390V
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
©2005 Fairchild Semiconductor Corporation
FIGURE 25. SWITCHING TEST WAVEFORMS
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2005 Fairchild Semiconductor Corporation
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 25.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM . td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 25. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in the
calculation for EOFF; i.e., the collector current equals zero
(ICE = 0).
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
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