HGTP3N60A4

HGTD3N60A4S, HGTP3N60A4 Data Sheet August 2003 600V, SMPS Series N-Channel IGBT Features The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. • >100kHz Operation at 390V, 3A This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. • Low Conduction Loss • 200kHz Operation at 390V, 2.5A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC • 12mJ EAS Capability • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Formerly Developmental Type TA49327. Ordering Information PART NUMBER Packaging PACKAGE JEDEC TO-252AA BRAND HGTD3N60A4S TO-252AA 3N60A4 HGTP3N60A4 TO-220AB 3N60A4 G NOTE: When ordering, use the entire part number. E COLLECTOR Symbol (FLANGE) C JEDEC TO-220AB G COLLECTOR (FLANGE) E C G E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 ©2003 Fairchild Semiconductor Corporation 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 HGTD3N60A4S, HGTP3N60A4 Rev. B1 HGTD3N60A4S, HGTP3N60A4 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES ALL TYPES UNITS 600 V Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 17 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 8 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 40 A Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 15A at 600V Single Pulse Avalanche Energy at TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 12mJ at 3A Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 70 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.56 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications TJ = 25oC, Unless Otherwise Specified MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage PARAMETER BVCES IC = 250µA, VGE = 0V 600 - - V Emitter to Collector Breakdown Voltage BVECS IC = -10mA, VGE = 0V 20 - - V - - 250 µA - - 2.0 mA - 2.0 2.7 V - 1.6 2.2 V 4.5 6.1 7.0 V Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Pulsed Avalanche Energy Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time SYMBOL ICES VCE(SAT) VGE(TH) TEST CONDITIONS VCE = 600V IC = 3A, VGE = 15V TJ = 25oC TJ = 125oC TJ = 25oC TJ = 125oC IC = 250µA, VCE = 600V - - ±250 nA TJ = 150oC, RG = 50Ω, VGE = 15V L = 200µH, VCE = 600V 15 - - A EAS ICE = 3A, L = 2.7mH 12 - - mJ VGEP IC = 3A, VCE = 300V - 8.8 - V VGE = 15V - 21 25 nC VGE = 20V - 26 32 nC - 6 - ns - 11 - ns - 73 - ns - 47 - ns - 37 - µJ IGES SSOA Qg(ON) td(ON)I trI td(OFF)I tfI VGE = ±20V IC = 3A, VCE = 300V IGBT and Diode at TJ = 25oC ICE = 3A VCE = 390V VGE = 15V RG = 50Ω L = 1mH Test Circuit - Figure 20 Turn-On Energy (Note 3) EON1 Turn-On Energy (Note 3) EON2 - 55 70 µJ Turn-Off Energy (Note 2) EOFF - 25 35 µJ ©2003 Fairchild Semiconductor Corporation HGTD3N60A4S, HGTP3N60A4 Rev. B1 HGTD3N60A4S, HGTP3N60A4 Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time TEST CONDITIONS IGBT and Diode at TJ = 125oC td(ON)I Current Rise Time ICE = 3A VCE = 390V VGE = 15V RG = 50Ω L = 1mH Test Circuit - Figure 20 trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI MIN TYP MAX UNITS - 5.5 8 ns - 12 15 ns - 110 165 ns - 70 100 ns - 37 - µJ µJ Turn-On Energy (Note 3) EON1 Turn-On Energy (Note 3) EON2 - 90 100 Turn-Off Energy (Note 2) EOFF - 50 80 µJ 1.8 oC/W Thermal Resistance Junction To Case - RθJC - NOTES: 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. Unless Otherwise Specified VGE = 15V 16 12 8 4 0 25 50 75 100 125 150 20 TJ = 150oC, RG = 50Ω, VGE = 15V, L = 200µH 16 12 8 4 0 0 TC , CASE TEMPERATURE (oC) VGE 75oC 15V fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 1.8oC/W, SEE NOTES TJ = 125oC, RG = 50Ω, L = 1mH, V CE = 390V 1 2 3 4 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT ©2003 Fairchild Semiconductor Corporation 6 tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX, OPERATING FREQUENCY (kHz) TC 200 50 300 400 500 700 600 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA 300 100 200 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 600 100 20 64 VCE = 390V, RG = 50Ω, TJ = 125oC 18 56 tSC 16 48 14 40 ISC 12 32 10 24 8 16 6 8 4 10 13 14 12 VGE , GATE TO EMITTER VOLTAGE (V) 11 0 15 ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 20 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGTD3N60A4S, HGTP3N60A4 Rev. B1 HGTD3N60A4S, HGTP3N60A4 20 DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250µs 16 Unless Otherwise Specified (Continued) TJ = 150oC TJ = 125oC 12 8 4 TJ = 25oC 0 1 0 2 3 4 5 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 20 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs 16 TJ = 125oC TJ = 150oC 12 8 4 0 TJ = 25oC 0 FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 4 140 RG = 50Ω, L = 1mH, VCE = 390V EOFF, TURN-OFF ENERGY LOSS (µJ) EON2 , TURN-ON ENERGY LOSS (µJ) 3 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 240 200 TJ = 125oC, VGE = 12V, VGE = 15V 160 120 80 40 TJ = 25oC, VGE = 12V, VGE = 15V 1 2 3 4 5 RG = 50Ω, L = 1mH, VCE = 390V 120 100 60 40 20 0 6 TJ = 125oC, VGE = 12V OR 15V 80 TJ = 25oC, VGE = 12V OR 15V 1 ICE , COLLECTOR TO EMITTER CURRENT (A) 2 3 4 5 6 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 32 16 RG = 50Ω, L = 1mH, VCE = 390V RG = 50Ω, L = 1mH, VCE = 390V 28 12 trI , RISE TIME (ns) td(ON)I, TURN-ON DELAY TIME (ns) 2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 0 1 TJ = 25oC, TJ = 125oC, VGE = 12V 8 TJ = 25oC, TJ = 125oC, VGE = 15V 4 24 TJ = 25oC OR TJ = 125oC, VGE = 12V 20 16 12 8 0 1 2 3 4 5 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT ©2003 Fairchild Semiconductor Corporation 6 4 TJ = 25oC OR TJ = 125oC, VGE = 15V 1 2 3 4 5 ICE , COLLECTOR TO EMITTER CURRENT (A) 6 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT HGTD3N60A4S, HGTP3N60A4 Rev. B1 HGTD3N60A4S, HGTP3N60A4 Typical Performance Curves Unless Otherwise Specified (Continued) 96 VGE = 15V, TJ = 125oC RG = 50Ω, L = 1mH, VCE = 390V 104 88 VGE = 12V, TJ = 125oC 96 88 VGE = 15V, TJ = 25oC 80 72 VGE = 12V, TJ = 25oC 64 72 64 56 TJ = 25oC, VGE = 12V OR 15V RG = 50Ω, L = 1mH, VCE = 390V 40 1 2 3 4 5 ICE , COLLECTOR TO EMITTER CURRENT (A) 6 1 16 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250µs 16 12 TJ = 25oC 4 TJ = 125oC 4 6 TJ = -55oC 8 10 12 10 8 VCE = 200V 6 4 2 0 4 8 ICE = 3A ICE = 1.5A FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE ©2003 Fairchild Semiconductor Corporation 150 ETOTAL, TOTAL SWITCHING ENERGY LOSS (µJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (µJ) ICE = 4.5A 150 125 75 100 TC , CASE TEMPERATURE (oC) 12 16 20 24 28 FIGURE 14. GATE CHARGE WAVEFORMS RG = 50Ω, L = 1mH, VCE = 390V, VGE = 15V 50 VCE = 400V QG , GATE CHARGE (nC) 200 0 25 6 VCE = 600V 12 0 14 ETOTAL = EON2 + EOFF 50 5 IG(REF) = 1mA, RL = 100Ω, TJ = 25oC FIGURE 13. TRANSFER CHARACTERISTIC 100 4 14 VGE, GATE TO EMITTER VOLTAGE (V) 250 3 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 20 8 2 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 0 TJ = 125oC, VGE = 12V OR 15V 80 48 56 48 ICE, COLLECTOR TO EMITTER CURRENT (A) tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 112 1000 TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF ICE = 4.5A ICE = 3A 100 ICE = 1.5A 30 3 10 100 1000 RG, GATE RESISTANCE (Ω) FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE HGTD3N60A4S, HGTP3N60A4 Rev. B1 HGTD3N60A4S, HGTP3N60A4 Unless Otherwise Specified (Continued) 700 FREQUENCY = 1MHz C, CAPACITANCE (pF) 600 500 400 CIES 300 CRES 200 100 0 COES 0 20 40 60 80 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Typical Performance Curves 2.7 DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250µs, 2.6 2.5 2.4 ICE = 4.5A 2.3 ICE = 3A 2.2 2.1 2.0 ICE = 1.5A 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZqJC , NORMALIZED THERMAL RESPONSE 10 12 14 16 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE 100 0.5 0.2 0.1 10-1 t1 0.05 PD 0.02 0.01 10-2 t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZqJC X RqJC) + TC SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE ©2003 Fairchild Semiconductor Corporation HGTD3N60A4S, HGTP3N60A4 Rev. B1 HGTD3N60A4S, HGTP3N60A4 Test Circuit and Waveforms HGTP3N60A4D DIODE TA49369 VGE 90% 10% EON2 EOFF L = 1mH ICE RG = 50Ω ICE 90% DUT VCE + - 10% VDD = 390V td(ON)I trI tfI td(OFF)I FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 21. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2003 Fairchild Semiconductor Corporation HGTD3N60A4S, HGTP3N60A4 Rev. B1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FRFET™ CoolFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ EnSigna™ ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5