HGTG20N60B3

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These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. • 40A, 600V at TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC • Short Circuit Rated • Low Conduction Loss Packaging JEDEC STYLE TO-247 Formerly developmental type TA49050. E C Ordering Information PART NUMBER HGTG20N60B3 G PACKAGE TO-247 BRAND HG20N60B3 COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2004 Fairchild Semiconductor Corporation HGTG20N60B3 Rev.B3 HGTG20N60B3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG20N60B3 UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V Collector to Gate Voltage, RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 40 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 160 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V Switching Safe Operating Area at TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 600V Collector Current Continuous Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 165 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG -40 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300 260 oC oC Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 4 µs Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE = 360V, TC = 125oC, RG = 25Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V Emitter to Collector Breakdown Voltage BVECS IC = -10mA, VGE = 0V Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current ICES VCE(SAT) VGE(TH) IGES TEST CONDITIONS VCE = BVCES IC = IC110, VGE = 15V TC = 25oC MIN TYP MAX UNITS 600 - - V 20 - - V - - 250 µA TC = 150oC - - 1.0 mA TC = 25oC - 1.8 2.0 V TC = 150oC - 2.1 2.5 V 3.0 5.0 6.0 V - - ±100 nA VCE = 480V 100 - - A VCE = 600V IC = 250µA, VCE = VGE VGE = ±20V Switching SOA SSOA TC = 150oC, VGE = 15V, RG = 10Ω, L = 45µH 30 - - A Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES - 8.0 - V IC = IC110 , VCE = 0.5 BVCES VGE = 15V - 80 105 nC VGE = 20V - 105 135 nC - 25 - ns On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time QG(ON) td(ON)I trI td(OFF)I tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF Thermal Resistance RθJC TC = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10Ω L = 100µH - 20 - ns - 220 275 ns - 140 175 ns - 475 - µJ - 1050 - µJ 0.76 oC/W - - NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG20N60B3 was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. ©2004 Fairchild Semiconductor Corporation HGTG20N60B3 Rev.B3 HGTG20N60B3 PULSE DURATION = 250µs DUTY CYCLE