SCT1255Z

12 Technical Data Data Sheet N2144, Rev.- 3 TO-220A Insulated 1 2 3 TO-220B Non-Insulated SCT1255Z 2 SCT1255SJ SCT1255Z/SJ 55A SCRs 12 3 TO-220F Circuit Diagram Insulated 1 3 TO-263 A(2) K(1) G(3) TO-3P Insulated TO-247J Description With high ability to withstand the shock loading of large current, SCT1255 SCRs provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. Maximum Ratings: Characteristics Symbol Condition - Max. Units -40-150 C Storage junction temperature range TJ Operating junction temperature range Tstg - -40-125 C Repetitive peak off-state voltage(Tj=25℃) VDRM - 1200 V Repetitive peak reverse voltage(Tj=25℃) VRRM - 1200 V Non repetitive peak off-state voltage VDSM - VDRM +100 V Non repetitive peak reverse voltage VRSM - VRRM +100 V 55 A 520 A RMS on-state current Non repetitive surge peak on-state current (tp=10ms) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG=2×IGT) Peak gate current Average gate power dissipation Peak gate power I(TRMS) ITSM TO-3P Ins (TC=80℃) TO-247J(TC=83℃) - I2t - 1350 A2 s dI/dt - 150 A/μs IGM - 5 A PG(AV) 1 W PGM - 10 W  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT1255Z SCT1255SJ Technical Data Data Sheet N2144, Rev.- Electrical Characteristics(Tj=25℃ unless otherwise specified) Symbol IGT Value Test Condition VD=12V RL=33Ω VGT VGD VD=VDRM Tj=125℃ RL=3.3KΩ Unit MIN. TYP. MAX. - - 50 mA - - 1.5 V 0.2 - - V IL IG=1.2IGT - - 150 mA IH IT=500mA - - 120 mA 800 - - V/μs dV/dt VD=2/3VDRM Gate Open Tj=125℃ Static Characteristics Symbol VTM IDRM IRRM Condition Max. ITM=80A tp=380μs,Tj=25℃ VD=VDRM VR=VRRM, Tj=25℃ VD=VDRM VR=VRRM, Tj=125℃ Units 1.6 10 6 V μA mA Value Units Thermal Resistances Symbol Rth(j-c) Condition Junction to case(AC) TO-3P Ins 0.65 TO-247J 0.6 ℃/W Ordering Information S CT 12 55 Z SMC Diode Solutions Z:TO-3P Ins SCRs SJ:TO-247J 12:VDRM/VRRM ≥ 1200V Device SCT1255Z SCT1255SJ IT(RMS):55A Package Shipping TO-3P Ins 30pcs/ Tube TO-247J 30pcs/ Tube  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT1255Z SCT1255SJ Technical Data Data Sheet N2144, Rev.- Marking Diagram Where XXXXX is YYWWL SCT1255Z SCT1255SJ YY WW L = Part name = Part name = Year = Week = Lot Number Mechanical Dimensions TO-3P(Ins) SYMBOL A Millimeters Min. Typ. 4.40 Inches Max. Min. Typ. Max. 4.60 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.50 0.70 0.020 0.028 E 2.70 2.90 0.106 0.114 F 15.80 16.50 0.622 0.650 G 20.40 21.10 0.803 0.831 H 15.10 15.50 0.594 0.610 J K L P R 5.40 1.10 1.35 2.80 5.65 1.40 1.50 3.00 0.213 0.043 0.053 0.110 0.222 0.055 0.059 0.118 4.35 0.171 Mechanical Dimensions TO-247J SYMBOL Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 15.50 15.80 16.10 0.610 0.622 0.634 B 20.80 21.00 22.20 0.819 0.828 0.874 C 19.70 20.00 20.30 0.776 0.787 0.799 D 1.80 2.00 2.20 0.071 0.079 0.087 E 1.90 2.10 2.30 0.075 0.083 0.091 F 1.00 1.20 1.40 0.039 0.047 0.055 G 5.44 0.214 H 4.80 5.00 5.20 0.189 0.197 0.205 J 1.90 2.00 2.10 0.075 0.079 0.083 K 2.20 2.35 2.50 0.087 0.093 0.098 L 0.41 0.60 0.79 0.016 0.024 0.031  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT1255Z SCT1255SJ Technical Data Data Sheet N2144, Rev.- Ratings and Characteristics Curves FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A) 66 P(w) 80 α=180° TO-247J 55 60 44 40 33 TO-3P(lns) 22 20 11 0 0 IT(RMS) (A) 22 33 11 44 55 0 Tc (℃) 0 25 FIG.3: Surge peak on-state current versus number of cycles 700 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) 600 ITSM (A) tp=10ms One cycle 600 Tj=Tjmax 100 500 400 300 10 200 Tj=25℃ 100 0 1 10 Number of cycles 100 1000 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp