SCT616B

SCT616B SCTX816B Technical Data Data Sheet N2037, Rev.- SCT616/816 Series 16A SCRs Circuit Diagram TO-220B(Non-Ins) Description With high ability to withstand the shock loading of large current, SCT616/816 series of silicon controlled rectifiers provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. Maximum Ratings: Characteristics Symbol Condition Max. Storage junction temperature range Operating junction temperature range Repetitive peak off-state voltage Tstg - -40 to +150 C VDRM - 600/800 V Repetitive peak reverse voltage VRRM - 600/800 V Non repetitive peak off-state voltage VDSM - VDRM +100 V Non repetitive peak reverse voltage VRSM - VRRM +100 V RMS on-state current I(TRMS) TO-220B(Non-Ins)(TC=110℃) 16 A 180 A Non repetitive surge peak on-state current (tp=10ms) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG=2×IGT) Peak gate current Average gate power dissipation Peak gate power ITSM - -40 to +125 Units TJ - C 2 It - 162 A2 s dI/dt - 50 A/μs IGM 4 A PG(AV) - 1 W PGM - 5 W  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT616B SCTX816B Technical Data Data Sheet N2037, Rev.- Electrical Characteristics(Tj=25℃ unless otherwise specified) Symbol IGT Value Test Condition VD=12V RL=33Ω VGT VGD VD=VDRM Tj=125℃ RL=3.3KΩ Unit MIN. TYP. MAX. - - 15 mA - - 1.3 V 0.2 - - V IL IG=1.2IGT - - 60 mA IH IT=500mA - - 50 mA 200 - - V/μs dV/dt VD=2/3VDRM Gate Open Tj=125℃ Static Characteristics Symbol Condition IT=32A tp=380μs,Tj=25℃ VD=VDRM VR=VRRM, Tj=25℃ VD=VDRM VR=VRRM, Tj=125℃ VTM IDRM IRRM Max. Units 1.55 5 2 V μA mA Value Units 1.1 ℃/W Thermal Resistances Symbol Condition Rth(j-c) Junction to case(AC) TO-220B(Non-Ins) Ordering Information S CT 6 16 B SMC Diode Solutions SCRs B:TO-220B(Non-Ins) 600:VDRM/VRRM ≥ 600V 800:VDRM/VRRM ≥ 800V Device SCT616/816 Series IT(RMS):16A Package TO-220B(Non-Ins) Shipping 50pcs/ Tube  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT616B SCTX816B Technical Data Data Sheet N2037, Rev.- Marking Diagram Where XXXXX is YYWWL SCT616B YY WW L = Part name = Year = Week = Lot Number Mechanical Dimensions TO-220B(Non-Ins) SYMBOL Millimeters Min. Typ. Inches Max. Min. 0.17 3 0.02 4 0.01 8 0.04 8 0.09 4 0.33 9 0.37 8 0.24 4 A B C C2 C3 4.40 0.61 0.46 1.21 2.40 4.60 0.88 0.70 1.32 2.72 D 8.60 9.70 E F G 9.60 6.20 10.4 6.60 H L1 L2 L3 V1 28.0 2.54 1.14 2.65 29.8 3.75 1.70 2.95 45° 1.10 2 0.04 5 0.10 4 Typ. Max. 0.1 0.18 1 0.03 5 0.02 8 0.05 2 0.10 7 0.38 2 0.40 9 0.26 0 1.17 3 0.14 8 0.06 7 0.11 6 45° Ratings and Characteristics Curves FIG.1 Maximum power dissipation versus RMS on-state current P(w) 20 FIG.2: RMS on-state current versus case temperature IT(RMS) (A) 24 α=180° 20 15 TO-220B (Non-Ins) 16 10 12 8 5 4 0 0 4 IT(RMS) (A) 8 12 16 20 0 0 Tc (℃) 25 50 75  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  100 125 SCT616B SCTX816B Technical Data Data Sheet N2037, Rev.- FIG.3: Surge peak on-state current versus number of cycles FIG.4: On-state characteristics (maximum values) ITSM (A) 210 100 ITM (A) tp=10ms One cycle 180 Tj=125℃ 150 120 10 90 60 Tj=25℃ 30 0 1 10 Number of cycles 100 1000 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp