SCT655Z

12 Technical Data Data Sheet N2070, Rev.- 3 TO-220A Insulated 1 2 3 TO-220B Non-Insulated SCT655Z SCT855Z 2 SCT655Z/855Z 55A SCRs 12 3 TO-220F Circuit Diagram Insulated 1 3 TO-263 A(2) K(1) G(3) TO-3P Insulated Description With high ability to withstand the shock loading of large current, SCT655/855 SCRs provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. Maximum Ratings: Characteristics Symbol Condition - Max. Units Storage junction temperature range TJ -40-150 C Operating junction temperature range Tstg - -40-125 C Repetitive peak off-state voltage(Tj=25℃) VDRM - 600/800 V Repetitive peak reverse voltage(Tj=25℃) VRRM - 600/800 V 55 A 520 A RMS on-state current Non repetitive surge peak on-state current (tp=10ms) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG=2×IGT) Peak gate current Peak gate power Average gate power dissipation (Tj=125℃) I(TRMS) ITSM TO-3P Ins (TC=80℃) - 2 It - 1350 A2 s dI/dt - 150 A/μs IGM 5 A PGM - 10 W PG(AV) - 1 W  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT655Z SCT855Z Technical Data Data Sheet N2070, Rev.- Electrical Characteristics(Tj=25℃ unless otherwise specified) Symbol IGT Value Test Condition VD=12V RL=33Ω VGT VGD VD=VDRM Tj=125℃ RL=3.3KΩ Unit MIN. TYP. MAX. 10 15 50 mA - - 1.5 V 0.2 - - V IL IG=1.2IGT - - 100 mA IH IT=500mA - - 80 mA 700 - - V/μs VD=2/3VDRM Tj=125℃ Gate Open dV/dt Static Characteristics Symbol Condition VTM IDRM IRRM ITM=80A tp=380μs,Tj=25℃ VD=VDRM VR=VRRM, Tj=25℃ VD=VDRM VR=VRRM, Tj=125℃ Max. Units 1.6 10 6 V μA mA Value Units 0.65 ℃/W Thermal Resistances Symbol Condition Rth(j-c) Junction to case(AC) TO-3P Ins Ordering Information S CT 6 55 Z SMC Diode Solutions SCRs Z:TO-3P Ins 6:VDRM/VRRM ≥ 600V 8:VDRM/VRRM ≥ 800V Device SCT655Z/SCT855Z IT(RMS):55A Package Shipping TO-3P Ins 30pcs/ Tube  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT655Z SCT855Z Technical Data Data Sheet N2070, Rev.- Marking Diagram Where XXXXX is YYWWL SCT655Z YY WW L = Part name = Year = Week = Lot Number Mechanical Dimensions TO-220B(Non-Ins) SYMBOL Millimeters Min. Typ. Inches Max. Min. Typ. Max. A 4.40 4.60 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.50 0.70 0.020 0.028 E 2.70 2.90 0.106 0.114 F 15.80 16.50 0.622 0.650 G 20.40 21.10 0.803 0.831 H 15.10 15.50 0.594 0.610 J K L P R 5.40 1.10 1.35 2.80 5.65 1.40 1.50 3.00 0.213 0.043 0.053 0.110 0.222 0.055 0.059 0.118 4.35 0.171 Ratings and Characteristics Curves FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A) 66 P(w) 80 α=180° 55 60 TO-3P Ins 44 40 33 22 20 11 0 0 11 IT(RMS) (A) 22 33 44 55 0 0 Tc (℃) 25 50 75 100 FIG.3: Surge peak on-state- current versus FIG.4: On-state characteristics  China Germany - Korea - Singapore - United States  (maximum number of cycles  http://www.smc-diodes.com - sales@ values) smc-diodes.com  ITM (A) 600 ITSM (A) 560 tp=10ms One cycle 125 40 33 SCT655Z SCT855Z 22 20 Technical Data Data Sheet N2070, Rev.IT(RMS) (A) 0 0 11 22 33 11 44 55 FIG.3: Surge peak on-state current versus number of cycles Tc (℃) 0 0 25 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) 600 ITSM (A) 560 tp=10ms One cycle 480 Tj=Tjmax 100 400 320 240 10 160 Tj=25℃ 80 0 1 10 Number of cycles 100 1000 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp