SCT640B

SCT640B SCT840B Technical Data Data Sheet N2039, Rev.- SCT640/840 Series 40A SCRs Circuit Diagram TO-220B(Non-Ins) Description With high ability to withstand the shock loading of large current, SCT640/840 provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. Maximum Ratings: Characteristics Symbol Max. Units Tstg - -40-150 ℃ Tj - -40-125 ℃ Repetitive peak off-state voltage(Tj=25℃) VDRM - 600/800 V Repetitive peak reverse voltage(Tj=25℃) VRRM - 600/800 V Non repetitive surge peak off-state voltage VDSM - VDRM +100 V Non repetitive peak reverse voltage VRSM - VRRM +100 V RMS on-state current I(TRMS) Storage junction temperature range Operating junction temperature range Non repetitive surge peak on-state current (tp=10ms) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG=2×IGT) Peak gate current Average gate power dissipation Peak gate power Condition 40 A - 460 A 2 It - 1060 A2s dI/dt - 50 A/μs IGM PG(AV) - PGM - 4 1 5 A W W ITSM TO-220B(Non-Ins)(TC=85℃)  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT640B SCT840B Technical Data Data Sheet N2039, Rev.- Electrical Characteristics(Tj=25℃ unless otherwise specified) Symbol IGT Value Test Condition VD=12V RL=33Ω VGT VGD VD=VDRM Tj=125℃ RL=3.3KΩ Unit MIN. TYP. MAX. - 15 35 mA - - 1.5 V 0.2 - - V IL IG=1.2IGT - - 90 mA IH IT=500mA - - 75 mA 200 - - V/μs dV/dt VD=2/3VDRM Gate Open Tj=125℃ Static Characteristics Symbol VTM IDRM IRRM Condition IT=80A tp=380μs,Tj=25℃ VD=VDRM VR=VRRM, Tj=25℃ VD=VDRM VR=VRRM, Tj=125℃ Max. Units 1.55 10 4 V μA mA Value Units 0.78 ℃/W Thermal Resistances Symbol Rth(j-c) Condition Junction to case(AC) TO-220B(Non-Ins) Ordering Information S CT 6 40 B SMC Diode Solutions SCRs B:TO-220B(Non-Ins) 600:VDRM/VRRM ≥ 600V 800:VDRM/VRRM ≥ 800V Device SCTX40B IT(RMS):40A Package TO-220B(Non-Ins) Shipping 50pcs/ Tube  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT640B SCT840B Technical Data Data Sheet N2039, Rev.- Marking Diagram Where XXXXX is YYWWL SCT640B YY WW L = Part name = Year = Week = Lot Number Mechanical Dimensions TO-220B(Non-Ins) SYMBOL Millimeters Min. Typ. Inches Max. Min. Typ. Max. A 4.40 4.60 0.173 0.181 B 0.61 0.88 0.024 0.035 C 0.46 0.70 0.018 0.028 C2 1.21 1.32 0.048 0.052 C3 2.40 2.72 0.094 0.107 D 8.60 9.70 0.339 0.382 E 9.60 10.4 0.378 0.409 F 6.20 6.60 0.244 G 0.260 2.54 H 28.0 L1 L2 L3 V1 1.14 2.65 0.1 29.8 1.102 1.70 2.95 0.045 0.104 3.75 1.173 0.148 45° 0.067 0.116 45° Ratings and Characteristics Curves FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature P(w) 60 IT(RMS) (A) 60 50 50 40 40 30 30 20 20 10 10 0 0 10 IT(RMS) (A) 20 30 40 50 0 α=180° TO-220B(Non-Ins) Tc (℃) 0 25 50 75 100 FIG.3: Surge peak on-state current versus FIG.4: On-state characteristics (maximum  China Germany Korea Singapore number of cycles values) - United States  490 420 ITSM (A) ITM (A) smc-diodes.com   http://www.smc-diodes.com - sales@ 500 tp=10ms One cycle Tj=125℃ 100 125 50 50 40 40 30 30 20 Technical Data Data Sheet N2039, Rev.- 20 10 0 0 10 IT(RMS) (A) 20 30 10 40 50 FIG.3: Surge peak on-state current versus number of cycles 490 SCT640B SCT840B TO-220B(Non-Ins) 0 Tc (℃) 0 25 50 75 125 ITM (A) 500 ITSM (A) tp=10ms One cycle 420 100 FIG.4: On-state characteristics (maximum values) Tj=125℃ 100 350 280 210 10 140 Tj=25℃ 70 0 1 10 Number of cycles 100 1000 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp