MCR100-4 A1G

MCR100-3 - MCR100-8 Taiwan Semiconductor Small Signal Product CREAT BY ART Thyristors FEATURES - Epitaxial planar die construction - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Packing code with suffix "G" means Green compound (Halogen free) TO-92 MECHANICAL DATA - Case : TO-92 plastic package - Terminal : Matte tin plated, lead free, solderable en de d per MIL-STD-202, method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s - Weight : 0.19 gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL Peak Repetitive Forward and Reverse Blocking Voltage（TJ=25°C to 125°C， RGK=1KΩ） IT(RMS) mm Forward Current RMS (All Conduction Angles） VALUE UNIT 0.8 A MCR100-3 100 MCR100-4 200 MCR100-5 300 VDRM VRRM MCR100-6 MCR100-7 eco 500 MCR100-8 Peak Forward Surge Current，TA=25°C V 400 600 ITSM 10 A I2t PGM 0.415 0.1 A2s W PGF(AV) 0.01 W Forward Peak Gate Current（TA=25°C，PW≤1 μs） IGFM 1 A Reverse Peak Gate Current（TA=25°C，PW ≤ 1 μs） VGRM 5 V TJ -40 ~ +125 °C TSTG -40 ~ +150 °C (1/2 Cycle，Sine Wave，60Hz） tR Circuit Fusing Considerations（t= 8.3 ms） Forward Peak Gate Power （TA=25°C，PW≤1 μs） No Forward Average Gate Power（TA=25°C) Operating junction temperature range Storage temperature range Notes: 1. Valid provided that electrodes are kept at ambient temperature PARAMETER Peak Forward or Reverse Blocking Current at VAK= Rated VDRM or VRRM Peak Forward On-State Voltage at ITM=1A Peak, TA=25oC Gate Trigger Current (Continous dc) at Anode Voltage = 7 Vdc., RL=100Ω SYMBOL MIN MAX UNIT IDRM IRRM - 10 μA VTM - 1.7 V IGT - 200 μA VGT - 0.8 V IH - 5 mA Gate Trigger Current (Continous dc) at Anode Voltage = 7 Vdc., RL=100Ω at Anode Voltage = Rated VDRM , RL=100Ω) Holding Current at Anode Voltage =7 Vdc, Initiating Current=20mA Document Number: DS_S1412032 Version: D15 MCR100-3 - MCR100-8 Taiwan Semiconductor Small Signal Product CREAT BY ART RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) 100 1 0.9 80 Gate Trigger Voltage(Volts) Gate Trigger Current (μA) 90 70 60 50 40 30 20 10 -40 -25 -10 5 20 35 50 65 80 95 0.8 0.7 0.6 0.5 0.4 0.3 0.2 110 -40 -25 TJ , Junction Temperature (OC) 20 35 50 65 80 95 110 (OC) d TJ . Junction Temperature de 1000 mm Latching Current(μA) en 1000 -40 -25 -10 5 20 35 e co 100 10 50 65 80 95 100 10 -40 110 -25 -10 tR 100 DC 180OC 70 60 60OC 120OC 90OC 40 0 0.1 0.2 0.3 IT(RMS), RMS On-State Current (AMPS) Document Number: DS_S1412032 65 80 95 110 Maximum @ TJ=25oC 80 30OC 50 10 90 50 35 Fig. 6 Typical On-State Characteristics IT,Instantaneous On-State Current (A) No Fig. 5 Typical RMS Current Derating 110 20 Fig. 4 Typical Lacthing Curent VS. Junction Temperature Fig. 3 Typical Holding Curent VS. Junction Temperature 120 5 TJ, Junction Temperature (OC) TJ , Junction Temperature (OC) TC , Maximum Allowable Case Temperature(OC) 5 Fig. 2 Typical Gate Trigger Voltage VS. Junction Temperature Fig. 1 Typical Gate Trigger Curent VS. Junction Temperature Holding Current(μA) -10 0.4 0.5 Maximum @ TJ=110oC 1 0.1 0.5 0.8 1.1 1.4 1.7 2 2.3 2.6 2.9 3.2 3.5 VT,Instantaneous On-State Voltage (volts) Version: D15 MCR100-3 - MCR100-8 CREAT BY ART Taiwan Semiconductor Small Signal Product ORDER INFORMATION (EXAMPLE) MCR100‐3 A1G Green compound code Packing code Part no. PACKAGE OUTLINE DIMENSIONS TO-92 (Ammo) A F Unit (mm) DIM. C Max Min Max A 4.30 5.10 0.169 0.201 B 4.30 4.70 0.169 0.185 12.50 - 0.492 - 2.20 2.80 0.087 0.110 0.35 0.55 0.014 0.022 F 0.59 1.40 0.023 0.055 G 0.29 0.51 0.011 0.020 H 3.30 4.10 0.130 0.161 C D mm G e co H TO-92 (Bulk) en E E D No tR DIM. Document Number: DS_S1412032 d Min de B Unit (inch) A Unit (mm) Unit (inch) Min Max Min Max 4.30 5.10 0.169 0.201 B 4.30 4.70 0.169 0.185 C 12.50 14.50 0.492 0.571 D 1.17 1.37 0.046 0.054 E 0.35 0.55 0.014 0.022 F 1.17 1.37 0.046 0.054 G 0.59 1.40 0.023 0.055 H 0.29 0.51 0.011 0.020 I 3.30 4.10 0.130 0.161 Version: D15 MCR100-3 - MCR100-8 CREAT BY ART Taiwan Semiconductor Small Signal Product MARKING DIAGRAM No tR e co mm en de d x = Device P/N from 3~8 Document Number: DS_S1412032 Version: D15 MCR100-3 - MCR100-8 Taiwan Semiconductor No tR e co mm en de d Small Signal Product Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_S1412032 Version: D15