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SCT825B

SCT825B

  • 厂商:

    SMCDIODESOLUTIONS(桑德斯)

  • 封装:

    TO-220-3

  • 描述:

    SCR 800V 25A TO220C

  • 数据手册
  • 价格&库存
SCT825B 数据手册
12 3 TO-220A Insulated 1 2 3 TO-220B Non-Insulated SCT825B 2 Technical Data Data Sheet N2037, Rev.- SCT825B 25A SCRs 12 3 TO-220F Circuit Diagram Insulated 1 3 TO-263 A(2) K(1) G(3) TO-220B(Non-Ins) Description With high ability to withstand the shock loading of large current, SCRs provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. Maximum Ratings: Characteristics Symbol Condition - Max. Units -40-150 C Storage junction temperature range TJ Operating junction temperature range Tstg - -40-125 C Repetitive peak off-state voltage(Tj=25℃) VDRM - 600/800 V Repetitive peak reverse voltage(Tj=25℃) VRRM - 600/800 V Non repetitive surge peak Off-state voltage VDSM - VDRM +100 V Non repetitive peak reverse voltage VRSM - VRRM +100 V I(TRMS) TO-220B(Non-Ins)(TC=100℃) 25 A 300 A RMS on-state current Non repetitive surge peak on-state current (tp=10ms) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG=2×IGT) Peak gate current Average gate power dissipation Peak gate power ITSM - I2t - 450 A2 s dI/dt - 50 A/μs IGM 4 A PG(AV) - 1 W PGM - 5 W  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT825B Technical Data Data Sheet N2037, Rev.- Electrical Characteristics(Tj=25℃ unless otherwise specified) Symbol IGT Value Test Condition VD=12V RL=33Ω VGT VGD VD=VDRM Tj=125℃ RL=3.3KΩ Unit MIN. TYP. MAX. - - 40 mA - - 1.3 V 0.2 - - V IL IG=1.2IGT - - 90 mA IH IT=500mA - - 80 mA 200 - - V/μs dV/dt VD=2/3VDRM Gate Open Tj=125℃ Static Characteristics Symbol VTM IDRM IRRM Condition IT=50A tp=380μs,Tj=25℃ VD=VDRM VR=VRRM, Tj=25℃ VD=VDRM VR=VRRM, Tj=125℃ Max. Units 1.55 10 4 V μA mA Value Units 1.0 ℃/W Thermal Resistances Symbol Rth(j-c) Condition Junction to case(AC) TO-220B(Non-Ins) Ordering Information S CT 8 25 B SMC Diode Solutions B:TO-220B(Non-Ins) K:DPAK SCRs IT(RMS):25A 8:VDRM/VRRM ≥ 800V Device SCT825B Package TO-220B(Non-Ins) Shipping 50pcs/ Tube  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT825B Technical Data Data Sheet N2037, Rev.- Marking Diagram Where XXXXX is YYWWL SCT825B YY WW L = Part name = Year = Week = Lot Number Mechanical Dimensions TO-220B(Non-Ins) SYMBO L Millimeters Min. Typ. Inches Max. Min. A B C C2 C3 4.40 0.61 0.46 1.21 2.40 4.60 0.88 0.70 1.32 2.72 0.173 0.024 0.018 0.048 0.094 Typ. 0.181 0.035 0.028 0.052 0.107 D 8.60 9.70 0.339 0.382 E F G H L1 L2 L3 V1 9.60 6.20 10.4 6.60 0.378 0.244 0.409 0.260 29.8 1.102 2.54 28.0 1.14 2.65 3.75 Max. 0.1 1.70 2.95 0.045 0.104 45° 1.173 0.14 8 0.067 0.116 45° Ratings and Characteristics Curves FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A) 30 P(w) 36 30 25 24 20 18 15 12 10 6 5 0 0 5 IT(RMS) (A) 10 15 20 25 0 0 α=180° TO-220B(Non-Ins) Tc (℃) 25 50 75 100 FIG.3: Surge peak on-state current versus FIG.4: On-state characteristics  China - Germany - Korea - Singapore - United States  (maximum number of cycles  http://www.smc-diodes.com - sales@ values)smc-diodes.com  ITM (A) 300 ITSM (A) 350 tp=10ms 125 24 20 18 15 12 10 Technical Data 6 Data Sheet N2037, Rev.IT(RMS) (A) 0 0 5 10 15 SCT825B 5 20 25 FIG.3: Surge peak on-state current versus number of cycles Tc (℃) 0 0 25 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) 300 ITSM (A) 350 tp=10ms One cycle 300 100 250 200 150 10 100 Tj=125℃ Tj=25℃ 50 0 1 10 Number of cycles 100 1000 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp
SCT825B 价格&库存

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