ES1GAL M3G

ES1BAL – ES1JAL Taiwan Semiconductor 1A, 100V - 600V Super Fast Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Low power loss, high efficiency Low profile package Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 1 A VRRM 100 - 600 V IFSM 30 A TJ MAX 150 °C Package Thin SMA Configuration Single die ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application MECHANICAL DATA ● ● ● ● ● ● Case: Thin SMA Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.029g (approximately) Thin SMA ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL ES1BAL ES1DAL ES1GAL ES1JAL UNIT Marking code on the device ES1BAL ES1DAL ES1GAL ES1JAL Repetitive peak reverse voltage VRRM 100 200 400 600 V Reverse voltage, total rms value VR(RMS) 70 140 280 420 V Forward current Surge peak forward current single half sine wave superimposed on rated load Junction temperature Storage temperature IF t = 8.3ms t = 1.0ms 1 A 30 A 60 A TJ -55 to +150 °C TSTG -55 to +150 °C IFSM 1 Version: C2103 ES1BAL – ES1JAL Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 28 °C/W Junction-to-ambient thermal resistance RӨJA 67 °C/W Junction-to-case thermal resistance RӨJC 20 °C/W Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT 0.80 - V ES1BAL IF = 1.0A, TJ = 25°C ES1DAL IF = 0.5A, TJ = 125°C 0.85 0.95 V 0.58 - V IF = 1.0A, TJ = 125°C 0.71 0.81 V IF = 0.5A, TJ = 25°C 0.86 - V 0.93 1.30 V 0.69 - V IF = 1.0A, TJ = 125°C 0.77 0.89 V IF = 0.5A, TJ = 25°C 1.04 - V IF = 1.0A, TJ = 25°C 1.15 1.70 V IF = 0.5A, TJ = 125°C 0.80 - V IF = 1.0A, TJ = 125°C 0.93 1.06 V - 1 µA - 20 µA - 35 ns 18 - pF 16 - pF 15 - pF IF = 0.5A, TJ = 25°C Forward voltage (1) ES1GAL ES1JAL Reverse current @ rated VR IF = 0.5A, TJ = 125°C TJ = 25°C (2) TJ = 125°C IF = 0.5A, IR = 1.0A, Irr = 0.25A Reverse recovery time Junction capacitance IF = 1.0A, TJ = 25°C ES1BAL ES1DAL ES1GAL 1MHz, VR = 4.0V ES1JAL VF IR trr CJ Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING ES1xAL Thin SMA 14,000 / Tape & Reel Notes: 1. "x" defines voltage from 100V(ES1BAL) to 600V(ES1JAL) 2 Version: C2103 ES1BAL – ES1JAL Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) 2 1 ES1BAL - ES1DAL ES1GAL ES1JAL 10 f=1.0MHz Vsig=50mVp-p 0 25 50 75 100 125 1 150 1 10 LEAD TEMPERATURE (°C) ES1BAL – ES1DAL TJ=150°C 1 TJ=125°C 0.1 0.01 0.001 TJ=25°C 0.0001 20 30 40 50 60 70 80 90 100 10 10 ES1BAL – ES1DAL UF1DLW 1 0.1 1 TJ=150°C TJ=125°C TJ=125°C TJ=25°C TJ=25°C (A) INSTANTANEOUS FORWARD CURRENT (A) 100 10 0.01 TJ=-55°C 0.001 0.1 0.3 0.4 width Pulse widthPulse 300μs 1% duty cycle 0.4 0.6 0.5 0.6 0.8 0.7 1 0.8 0.9 1.2 1 1.4 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics Fig.6 Typical Forward Characteristics 10 TJ=150°C ES1GAL 1 TJ=125°C 0.1 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 10 1.1 1.2 1.1 1.2 10 ES1GAL 1 UF1DLW T =150°C J TJ=125°C T =125°C J TJ=25°C 0.1 1 TJ=-55°C 0.01 0.001 0.1 0.3 0.4 TJ=25°C (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.3 Typical Reverse Characteristics 10 100 REVERSE VOLTAGE (V) Pulse widthPulse 300μs width 1% duty cycle 0.4 0.6 0.5 0.8 0.6 1 0.7 0.8 1.2 0.9 1.4 1 1.6 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 3 Version: C2103 ES1BAL – ES1JAL Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.8 Typical Forward Characteristics ES1JAL 10 TJ=150°C 1 TJ=125°C 0.1 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 10 10 ES1JAL UF1DLW TJ=150°C 1 TJ=125°C TJ=125°C 0.1 1 TJ=25°C 0.01 TJ=25°C (A) INSTANTANEOUS FORWARD CURRENT (A) 100 TJ=-55°C 0.001 0.1 0.3 0.4 0.5 0.3 0.5 0.7 0.9 Pulse widthPulse 300μs width 1% duty cycle 0.6 1.1 0.7 0.8 0.9 1.3 1.5 1.7 1.9 1 2.1 1.1 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig.9 Typical Transient Thermal Impedance 100 TRANSIENT THERMAL IMPEDANCE (°C/W) INSTANTANEOUS REVERSE CURRENT (μA) Fig.7 Typical Reverse Characteristics 10 1 0.1 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 PULSE DURATION (s) 4 Version: C2103 1.2 ES1BAL – ES1JAL Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS Thin SMA SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code YW = Date Code F = Factory Code 5 Version: C2103 ES1BAL – ES1JAL Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: C2103