TS4148C RZG

TS4148C Taiwan Semiconductor 100mA, 75V Switching Diode FEATURES KEY PARAMETERS ● ● ● ● ● Low power loss, high efficiency Ideal for automated placement High surge current capability Moisture sensitivity level: level 1, per J-STD-020 Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 100 mA VRRM 75 V IFSM 0.8 A VF at IF=10mA VF at IF=100mA 1.00 1.25 V TJ Max. 150 °C APPLICATIONS ● ● ● ● Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter Package 0603 (Ceramics) Configuration Single die MECHANICAL DATA ● Case: 0603(Ceramics) ● Molding compound meets UL flammability classification rating 94HB ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Polarity: Indicated by cathode band ● Weight: 2.7 mg (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Repetitive peak reverse voltage Mean forward current Non-repetitive peak forward surge at t＜1s current at t≦8.3ms SYMBOL VALUE UNIT VRRM IF 75 100 0.4 0.8 V mA IFSM A Junction temperature range TJ -55 to +150 °C Storage temperature range TSTG -55 to +150 °C 1 Version: G1809 TS4148C Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance SYMBOL TYP. UNIT RӨJA 375 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per diode CONDITIONS IF=10mA, TJ=25°C (1) IF=100mA, TJ=25°C VR=20V TJ=25°C Reverse current @ rated VR per diode (2) VR=75V TJ=25°C IF=10mA, IR=10mA, Reverse recovery time RL=100Ω 1 MHz, VR=0V Junction capacitance Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms SYMBOL TYP. MAX. - 1.00 trr CJ VF IR 1.25 UNIT V 25 nA 5 µA - 4 ns - 4 pF ORDERING INFORMATION ORDERING CODE PACKAGE PACKING 5K / 7" Reel TS4148C RZG 0603 TS4148C RCG 10K / 13" Reel 2 Version: G1809 TS4148C Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig. 1 Typical Forward Characteristics Fig. 2 Typical Reverse Characteristics 100 100 Reverse Current (uA) Instantaneous Forward Current (mA) 1000 10 1 10 1 0.1 0.1 0.01 0.01 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 0 20 Instantaneous Forward Voltage (V) Fig. 3 Admissible Power Dissipation Curve 60 80 Reverse Voltage (V) 100 120 Fig. 4 Typical Junction Capacitance 5 300 Junction Capacitance (pF) 250 Power Dissipation (mW) 40 200 150 100 4 3 2 1 50 0 0 0 25 50 75 100 125 150 175 0 200 Ambient Temperature (oC) 3 20 40 60 Reverse Voltage (V) 80 100 Version: G1809 TS4148C Taiwan Semiconductor PACKAGE OUTLINE DIMENSION 0603 (Ceramics) DIM. 4 Unit (mm) Unit (inch) Min Max Min Max A 1.45 1.65 0.057 0.065 B 0.70 0.90 0.028 0.035 C 0.25 0.45 0.010 0.018 D 0.55 0.75 0.022 0.030 Version: G1809 TS4148C Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version: G1809