NJU77550/NJU77551/NJU77552/NJU77554
1.7MHz, 50μA/ch, Excellent EMI Immunity,
Rail-to-Rail Input/Output, Operational Amplifier
■ FEATURES (V+ = 5V, Typical value)
● High Efficiency:
- GBW
1.7MHz
- Supply Current
50μA/ch
● Rail-to-Rail Input and Output
● Supply Voltage
1.8V to 5.5V
● Integrated EMI filter
EMIRR = 75dB @f = 900MHz
● Input Tolerant
● Unity-Gain stable
● Input Offset Voltage
5mV max.
● Slew Rate
0.8V/μs
● Operating Temperature
-55°C to 125°C
● Package
NJU77550 / NJU77551
SOT-23-5, SC-88A
NJU77552
SOP8, MSOP8 (TVSP8)*
* meet JEDEC MO-187-DA / thin type
DFN8-U1 (ESON8-U1)
NJU77554
SSOP14
■ DESCRIPTION
The NJU77550/NJU77551/NJU77552/NJU77554 are single,
dual and quad rail-to-rail input and output single supply
OpAmp, featuring low supply current of 50μA typical per
amplifier, wide gain bandwidth product of 1.7MHz and a slew
rate of 0.8V/μs. Furthermore, operating voltage from 1.8V
single supply can contribute to energy saving design, it is most
suitable for battery equipment required low power.
■ APPLICATIONS
● Battery-Powered Equipment
- Audio, Healthcare, Security, etc.
● Gas / Smoke Sensors
● Smart Meter
● Sensor Interface
● Active Filters
● Photodiode Amplifier
The NJU7755x series guarantees the specifications from
1.8V to 5.5V single supply, making it ideal for low voltage
applications. In addition, the operating temperature is
expanded to -55°C to 125°C, which can be used in harsh
environments with large temperature changes.
Low input bias current makes NJU7755x series suitable for
photodiode amplifiers, piezoelectric sensors, smoke detector
and other applications with high-impedance applications. A
rail-to-rail input and output allows the device to be used in wide
variety of applications, such as audio amplifier, high-side
current sensing, active filter, buffering and others. And also,
High EMI immunity that can reduced malfunctions caused by
RF-noises from mobile phones and other electronic devices,
and input tolerant that allows the input voltage
(Recommended: V-+5.5V) that exceed positive supply voltage
is ideal for robust industrial applications.
The NJU77550/NJU77551 is available in 5-pin SC-88A and
SOT-23-5 package. The NJU77552 is available in 8-pin
SOP8, MSOP (TVSP): meet JEDEC MO-187-DA / thin type
package and DFN that is thin and 2mm square small package.
The NJU77554 is available in SSOP14 package.
TYPICAL APPLICATION
High Efficiency
GBW=1.7MHz ( ISUPPLY = 50μA/ch )
Gain vs. Frequency
GV=40dB, CL=100pF
70
VOUT
ADC
Voltage Gain [dB]
VIN
Voltage [1V/div]
Overvoltage
up to 5.5V
60
VIN
(Overvoltage)
3.3V
VOUT
0
50
40
V+=1.8V
30
V+=5V
20
10
Time
0
100
ADC buffer with input tolerant
ver.3.0
www.njr.com
1k
10k
100k
Frequency [Hz]
1M
10M
-1-
NJU77550/NJU77551/NJU77552/NJU77554
■ PIN CONFIGURATIONS
PRODUCT NAME
NJU77550F3
NJU77550F
NJU77551F3
NJU77551F
Package
SC88A
SOT-23-5
SC88A
SOT-23-5
(Top View)
Pin
Functions
OUTPUT
1
V-
2
+INPUT
3
(Top View)
V+
5
4
-INPUT
+INPUT
1
V-
2
-INPUT
3
5
V+
4
OUTPUT
PRODUCT NAME
NJU77552G
NJU77552RB1
NJU77552KU1
Package
SOP8
MSOP8 (TVSP8)
DFN8-U1 (ESON8-U1)
(Top View)
(Top View)
Pin
Functions
A OUTPUT
1
8
V+
A -INPUT
2
7
B OUTPUT
A OUTPUT
1
A -INPUT
2
A +INPUT
3
6
B -INPUT
A +INPUT
3
V-
4
5
B +INPUT
V-
4
Exposed
Pad on
Underside
8
V+
7
B OUTPUT
6
B -INPUT
5
B +INPUT
(Connect to exposed pad to V-)
PRODUCT NAME
NJU77554V
Package
SSOP14
(Top View)
Pin
Functions
ver.3.0
A OUTPUT
1
14
D OUTPUT
A -INPUT
2
13
D -INPUT
A +INPUT
3
12
D +INPUT
V+
4
11
V-
B +INPUT
5
10
C +INPUT
B -INPUT
6
9
C -INPUT
B OUTPUT
7
8
C OUTPUT
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-2-
NJU77550/NJU77551/NJU77552/NJU77554
■ PRODUCT NAME INFORMATION
NJU77552
Part Number
RB1
(TE1)
Package
Taping Form
■ ORDERING INFORMATION
PRODUCT NAME
PACKAGE
RoHS
HALOGENFREE
TERMINAL
FINISH
MARKING
WEIGHT
(mg)
MOQ
(pcs)
NJU77550F (TE1)
NJU77550F3 (TE1)
NJU77551F (TE1)
NJU77551F3 (TE1)
NJU77552G (TE2)
NJU77552RB1 (TE1)
SOT-23-5
SC-88A
SOT-23-5
SC-88A
SOP8
MSOP8 (TVSP8)
DFN8-U1
(ESON8-U1)
SSOP14
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Sn2Bi
Sn2Bi
Sn2Bi
Sn2Bi
Pure Sn
Sn2Bi
11P
AU
11R
AV
77552
77552
15
7.5
15
7.5
88
18
3000
3000
3000
3000
2500
2000
Yes
Yes
Sn2Bi
77552
5.3
3000
Yes
Yes
Sn2Bi
77554
65
2000
NJU77552KU1 (TE3)
NJU77554V (TE1)
■ BLOCK DIAGRAM
V+
+INPUT
OUTPUT
-INPUT
ESD protection
ver.3.0
V-
www.njr.com
-3-
NJU77550/NJU77551/NJU77552/NJU77554
■ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
7
V
−
V −V
+
Supply Voltage
−
−
(1)
VIN
V − 0.3 to V + 7
V
Input Current (2)
IIN
10
mA
Output Terminal Input Voltage (3)
VO
V− − 0.3 to V+ + 0.3
V
VID
±7
V
Input Voltage
Differential Input Voltage
(4)
Output Short-Circuit Duration
(5)
Continuous
2-Layer / 4-Layer (6)
Power Dissipation (Ta = 25°C)
SOT-23-5
SC-88A
SOP8
MSOP8 (TVSP8)
DFN8-U1 (ESON8-U1)
SSOP14
480 / 650
360 / 490
690 / 1000
510 / 680
450 / 1200 (7)
500 / 620
PD
Storage Temperature
Tstg
-65 to 150
Junction Temperature
Tj
150
mW
°C
°C
+
(1) Input voltage is the voltage should be allowed to apply to the input terminal independent of the magnitude of V .
The normal operation will establish when any input is within the "Common-Mode Input Voltage Range" of electrical characteristics.
(2) Input voltages below the negative supply voltage will be clamped by ESD protection diodes. If the input voltage lower than V--0.3V, the input
current must be limited 10 mA or less by using a restriction resistance.
(3) The output terminal input voltage is limited at 7V.
(4) Differential voltage is the voltage difference between +INPUT and -INPUT.
(5) Short-circuit can cause excessive heating and destructive dissipation.
(6) 2-Layer: Mounted on glass epoxy board (76.2 mm × 114.3 mm × 1.6 mm: based on EIA/JEDEC standard, 2-layer FR-4).
4-Layer: Mounted on glass epoxy board (76.2 mm × 114.3 mm × 1.6 mm: based on EIA/JEDEC standard, 4-layer FR-4), internal Cu area: 74.2 mm × 74.2 mm.
(7) 2-Layer: Mounted on glass epoxy board (101.5 mm × 114.5 mm × 1.6 mm: based on EIA/JEDEC standard, 2-layer FR-4) with exposed pad.
4-Layer: Mounted on glass epoxy board (101.5 mm × 114.5 mm × 1.6 mm: based on EIA/JEDEC standard, 4-layer FR-4) with exposed pad.
(For 4-layer: Applying 99.5 mm × 99.5 mm inner Cu area and a thermal via hole to a board based on JEDEC standard JESD51-5.)
■ RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYMBOL
CONDITIONS
V+ − V−
Supply Voltage
Input Voltage
VIN
Operating Temperature
Topr
VALUE
UNIT
-40°C to 125°C
1.8 to 5.5
V
-55°C to 125°C
2.0 to 5.5
V
−
Closed-loop Gain ≥ 1
−
V − 0.3 to V + 5.5
V
-55 to 125
°C
■ TYPICAL APPLICATIONS
V+
VIN
V+
VOUT
VOUT
Vref
VIN
Vref
R1
R2
R1
Non-i nverting a mplifier
ver.3.0
R2
Inverti ng amplifier
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-4-
NJU77550/NJU77551/NJU77552/NJU77554
■ ELECTRICAL CHARACTERISTICS
(V+ = 1.8 to 5.5V, V− = 0V, VCOM = V+ / 2, RL = 10kΩ to VCOM, Ta = 25°C, unless otherwise noted.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CHARACTERISTICS
Input Offset Voltage
VCOM = 0V to V+
-
1
5
mV
Input Bias Current
IB
-
1
-
pA
Input Offset Current
IIO
-
1
-
pA
Input Offset Voltage Drift
VIO
ΔVIO/ΔT
Ta = −40°C to 125°C
-
1
-
µV/°C
Common-Mode Input Resistance
RIC
-
1
-
TΩ
Differential Input Resistance
RID
-
1
-
TΩ
Input Capacitance
CIN
Open-Loop Voltage Gain
AV
Common-Mode Rejection Ratio
Common-Mode
Input Voltage Range
CMR
VICM
-
5
-
pF
V+ = 5V, RL = 10kΩ to V+ / 2
68
90
-
dB
V+ = 5.5V,
VCOM = V− − 0.2V to V+ − 1.5V
70
90
-
dB
V+ = 5.5V,
VCOM = V− − 0.2V to V+
55
70
-
dB
V+ = 1.8V,
VCOM = V− − 0.2V to V+ + 0.2V
50
65
-
dB
V− − 0.2
-
V+ + 0.2 (8)
V
RL = 10kΩ to V+ / 2
V+ − 0.025
V+ − 0.010
-
V
RL = 2kΩ to V+ / 2
V+ − 0.100
V+ − 0.050
-
V
-
6
25
mV
RL = 2kΩ to V / 2
-
30
60
mV
RL = 10kΩ to V−
-
0
5
mV
-
0
5
mV
-
100
-
pF
CMR ≥ 50dB
OUTPUT CHARACTERISTICS
High-level Output Voltage
VOH
+
RL = 10kΩ to V / 2
+
Low-level Output Voltage
VOL
−
RL = 2kΩ to V
Capacitive Load Drive
CL
+
Output Short-Circuit Current
ISC
Sourcing, V = 5V
-
40
-
mA
Sinking, V+ = 5V
-
60
-
mA
NJU77550, NJU77551
-
55
76
μA
NJU77552, NJU77554
-
50
70
μA
70
90
-
dB
POWER SUPPLY
No signal, VCOM = 0V
Supply Current per Amplifier
ISUPPLY
+
Supply Voltage Rejection Ratio
SVR
V = 1.8V to 5.5V,
VCOM = 0V or V+
(8) V+ + 0.2V value is limited at 5.5V.
ver.3.0
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-5-
NJU77550/NJU77551/NJU77552/NJU77554
■ ELECTRICAL CHARACTERISTICS [Continued]
(V+ = 1.8 to 5.5V, V− = 0V, VCOM = V+ / 2, RL = 10kΩ to VCOM, Ta = 25°C, unless otherwise noted.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
+
AC CHARACTERISTICS (V = 5V)
Slew Rate
Gain Bandwidth Product
SR
CL = 100pF
-
0.8
-
V/μs
GBW
CL = 100pF
-
1.7
-
MHz
0.1%, V+ = 5V, CL = 100pF
-
6.5
-
μs
CL = 10pF
-
60
-
Deg
Gain = +2, f = 1kHz,
VO = 1.5Vrms
-
0.005
-
%
f = 0.1Hz to 10Hz
-
1.6
-
μVPP
Settling Time
ts
Phase Margin
ΦM
Total Harmonic Distortion + Noise
Equivalent Input Noise Voltage
Channel Separation
ver.3.0
THD+N
VNI
en
f = 1kHz
-
24
-
nV/√Hz
CS
f = 1kHz
-
120
-
dB
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-6-
NJU77550/NJU77551/NJU77552/NJU77554
■ THERMAL CHARACTERISTICS
PACKAGE
SYMBOL
VALUE
Junction-to-Ambient Thermal Resistance
2-Layer / 4-Layer
SOT-23-5
SC-88A
SOP8
MSOP8 (TVSP8)
DFN8-U1 (ESON8-U1)
SSOP14
UNIT
(6)
260 / 192
347 / 255
181 / 125
245 / 184
278 / 104 (7)
250 / 202
θja
°C/W
2-Layer / 4-Layer (6)
Junction-to-Top of Package Characterization Parameter
SOT-23-5
SC-88A
SOP8
MSOP8 (TVSP8)
DFN8-U1 (ESON8-U1)
SSOP14
67 / 58
91 / 73
49 / 43
51 / 45
42 / 25 (7)
53 / 52
ψjt
°C/W
(6) 2-Layer: Mounted on glass epoxy board (76.2 mm × 114.3 mm × 1.6 mm: based on EIA/JEDEC standard, 2-layer FR-4).
4-Layer: Mounted on glass epoxy board (76.2 mm × 114.3 mm × 1.6 mm: based on EIA/JEDEC standard, 4-layer FR-4), internal Cu area: 74.2 mm × 74.2 mm.
(7) 2-Layer: Mounted on glass epoxy board (101.5 mm × 114.5 mm × 1.6 mm: based on EIA/JEDEC standard, 2-layer FR-4) with exposed pad.
4-Layer: Mounted on glass epoxy board (101.5 mm × 114.5 mm × 1.6 mm: based on EIA/JEDEC standard, 4-layer FR-4) with exposed pad.
(For 4-layer: Applying 99.5 mm × 99.5 mm inner Cu area and a thermal via hole to a board based on JEDEC standard JESD51-5.)
■ POWER DISSIPATION vs. AMBIENT TEMPERATURE
Power Dissipation vs. Temperature
Power Dissipation vs. Temperature
4-Layer
1200
1200
1100
1100
1000
1000
Power Dissipation PD [mW]
Power Dissipation PD [mW]
2-Layer
900
800
MSOP8 (TVSP8)
700
SSOP14
600
SOP8
500
400
300
200
SOT-23-5
100
900
SOT-23-5
800
700
SOP8
600
500
400
300
200
SSOP14
100
SC-88A
SC-88A
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Ambient Temperature [°C]
Ambient Temperature [°C]
ver.3.0
MSOP8 (TVSP8)
www.njr.com
-7-
NJU77550/NJU77551/NJU77552/NJU77554
■ TYPICAL CHARACTERISTICS
Supply Current per Amplifier
vs. Supply Voltage
VCOM = 0V
70
Ta = 25°C
60
Ta = 125°C
50
40
30
Ta = −55°C
20
10
0
70
60
1
50
40
30
V+ = 1.8V
20
10
2
3
4
5
6
Supply Voltage V+ − V− [V]
7
-75 -50 -25 0 25 50 75 100 125 150
Ambient Temperature [°C]
Input Offset Voltage vs. Supply Voltage
5
Ta = −55°C
2
Ta = 25°C
1
0
Ta = 125°C
-1
3
2
1
0
-1
-2
-2
-3
0
1
2
3
4
5
6
Supply Voltage V+ − V− [V]
7
-75 -50 -25 0 25 50 75 100 125 150
Ambient Temperature [°C]
Input Offset Voltage Distribution
Input Offset Voltage Drift Distribution
V+ = 1.8V to 5.5V, VCOM = 0.5V, Ta = 25°C, n = 300
30%
Percent of Amplifiers [%]
30%
Percent of Amplifiers [%]
V+ = 5V, VCOM = 0.5V, n = 100
4
3
Input Offset Voltage [mV]
Input Offset Voltage [mV]
Input Offset Voltage vs. Temperature
VCOM = 0V
4
25%
20%
15%
10%
5%
0%
V+ = 1.8V to 5.5V, VCOM = 0.5V, n = 300
25%
20%
15%
10%
5%
0%
-3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 4.0
Input Offset Voltage [mV]
ver.3.0
V+ = 5.5V
V+ = 5V
0
0
35%
VCOM = 0V
80
Supply Current per Amplifier [μA]
80
Supply Current per Amplifier [μA]
Supply Current per Amplifier
vs. Temperature
5.0
-4.0 -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0
Input Offset Voltage Drift [μV / °C]
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4.0
-8-
NJU77550/NJU77551/NJU77552/NJU77554
■ TYPICAL CHARACTERISTICS
Input Offset Voltage
vs. Common-Mode Input Voltage
V+
Input Offset Voltage
vs. Common-Mode Input Voltage
V+ = 5V
= 5.5V
4
4
3
Ta = 125°C
Input Offset Voltage [mV]
Input Offset Voltage [mV]
3
2
1
0
-1
Ta = 25°C
-2
Ta = −55°C
-3
Ta = 125°C
2
1
0
-1
Ta = −55°C
Ta = 25°C
-2
-3
-4
-4
-1
0
1
2
3
4
5
Common-Mode Input Voltage [V]
6
-1
Input Offset Voltage
vs. Common-Mode Input Voltage
0
1
2
3
4
5
Common-Mode Input Voltage [V]
6
Input Bias Currentvs. Temperature
V+ = 1.8V
V+ = 5V
10000
4
Ta = 125°C
2
1000
Input Bias Current [pA]
Input Offset Voltage [mV]
3
1
0
-1
Ta = 25°C
-2
VCOM = 7V
100
10
VCOM = 5.5V
1
Ta = −55°C
Measuament uncertainly
-3
-4
0.1
-0.3
0
0.3 0.6 0.9 1.2 1.5 1.8
Common-Mode Input Voltage [V]
2.1
-75 -50 -25 0 25 50 75 100 125 150
Ambient Temperature [°C]
Open-Loop Voltage Gain vs. Temperature
CMR vs. Temperature
VCOM = V+ / 2V, RL = 10kΩ to VCOM
140
Common-Mode Rejection Ratio [dB]
140
Open-Loop Voltage Gain [dB]
130
120
V+ = 5.5V
110
100
90
V+ = 5V
80
70
60
50
V+ = 1.8V
40
130
120
110
V+ = 5.5V (VCOM = −0.2V to 4V)
V+ = 1.8V (VCOM = −0.2V to 0.3V)
100
90
80
V+ = 5.5V (VCOM = −0.2V to 5.5V)
70
60
50
V+ = 1.8V (VCOM = −0.2V to 2V)
40
-75 -50 -25 0 25 50 75 100 125 150
Ambient Temperature [°C]
ver.3.0
VCOM = 0V
VCOM = 5V
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-75 -50 -25 0 25 50 75 100 125 150
Ambient Temperature [°C]
-9-
NJU77550/NJU77551/NJU77552/NJU77554
■ TYPICAL CHARACTERISTICS
SVR vs. Temperature
Maximum Output Voltage vs. Output Current
V+ = 5.5V
5.5
130
5.0
Maximum Output Voltage [V]
Supply Voltage Rejection Ratio [dB]
V+ = 1.8V to 5.5V
140
120
110
VCOM = V−
100
90
80
70
VCOM = V+
60
4.5
VOH
4.0
3.5
3.0
2.5
Ta = 125°C
2.0
Ta = 25°C
1.5
1.0
50
0.5
40
0.0
-75 -50 -25 0 25 50 75 100 125 150
Ambient Temperature [°C]
VOL
Ta = −55°C
0
Maximum Output Voltage vs. Output Current
10 20 30 40 50 60 70 80 90 100
Output Current [mA]
Maximum Output Voltage vs. Output Current
V+ = 1.8V
1.8
4.5
1.6
4.0
Maximum Output Voltage [V]
Maximum Output Voltage [V]
V+ = 5V
5.0
VOH
3.5
3.0
2.5
Ta = 125°C
Ta = 25°C
2.0
1.5
1.0
VOL
0.5
1.2
1.0
0.8
0.6
Ta = 25°C
0.4
Ta = −55°C
10 20 30 40 50 60 70 80 90 100
Output Current [mA]
0
70
V+ − VOH (RL = 2kΩ)
50
VOL (RL = 2kΩ)
30
V+ − VOH (RL = 10kΩ)
20
VOL (RL = 10kΩ)
10
0
80
6
9
12
Output Current [mA]
15
V+ = 1.8V, RL connected to V+ / 2
70
60
V+ − VOH (RL = 2kΩ)
50
40
30
VOL (RL = 2kΩ)
20
VOL (RL = 10kΩ)
V+ − VOH (RL = 10kΩ)
10
0
-75 -50 -25 0 25 50 75 100 125 150
Ambient Temperature [°C]
ver.3.0
3
Maximum Output Voltage vs. Temperature
V+ = 5.5V, RL connected to V+ / 2
High-level Output Voltage (V+ − VOH) [mV]
Low-level Output Voltage (VOL) [mV]
High-level Output Voltage (V+ − VOH) [mV]
Low-level Output Voltage (VOL) [mV]
Maximum Output Voltage vs. Temperature
40
VOL
0.0
0
60
VOH
0.2
Ta = −55°C
0.0
80
Ta = 125°C
1.4
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-75 -50 -25 0 25 50 75 100 125 150
Ambient Temperature [°C]
- 10 -
NJU77550/NJU77551/NJU77552/NJU77554
■ TYPICAL CHARACTERISTICS
40dB Gain / Phase vs. Frequency
40dB Gain / Phase vs. Frequency
V+ / V− = ±2.5V, GV = 40dB, RF = 100kΩ, CL = 100pF
50
V+ / V− = ±0.9V, GV = 40dB, RF = 100kΩ, CL = 100pF
50
40
40
Gain
Ta = 125°C
Ta = −55°C
20
0
Phase
10
-45
Ta = 125°C
0
-90
30
Ta = 25°C
Ta = 125°C
Ta = −55°C
20
10
-45
Ta = 125°C
0
-90
-135
-10
-20
1k
10k
100k
Frequency [Hz]
1M
-180
10M
-20
100
GBW, fT vs. Temperature
30
2.2
1.8
1.6
1.4
1.2
fT (V+ = 1.8V)
1.0
fT (V+ = 5V)
-10
CL = 0pF
-20
Total Harmonic Distortion + Noise [%]
CL = 220pF
CL = 10pF
10
0
-10
CL = 0pF
-20
-30
-40
100k
1M
Frequency [Hz]
1M
Frequency [Hz]
10M
THD+N vs. Output Voltage
V+ / V− = ±0.9V, GV = 0dB, RL = 100kΩ, Ta = 25°C
CL = 100pF
CL = 10pF
0
Voltage Gain vs. Frequency
Open-Loop Voltage Gain [dB]
CL = 220pF
10
-40
100k
-75 -50 -25 0 25 50 75 100 125 150
Ambient Temperature [°C]
20
-180
10M
-30
0.8
30
1M
V+ / V− = ±2.5V, GV = 0dB, RL = 100kΩ, Ta = 25°C
CL = 100pF
GBW (V+ = 5V)
2.0
0.6
ver.3.0
10k
100k
Frequency [Hz]
20
GBW (V+ = 1.8V)
Voltage Gain [dB]
Gain Bandwidth Product GBW [MHz]
Unity Gain Frequency fT [MHz]
2.4
1k
Voltage Gain vs. Frequency
CL = 100pF
2.6
-135
Ta = −55°C
Ta = −55°C
100
0
Phase
Ta = 25°C
Ta = 25°C
-10
Voltage Gain [dB]
Ta = 25°C
Phase [deg]
30
Phase [deg]
Voltage Gain [dB]
Gain
10M
1
V+ / V− = ±2.5V, GV = 2, RF = 10kΩ, CL = 10pF
f = 20kHz
0.1
0.01
f = 10kHz
f = 1kHz
f = 20Hz
0.001
0.01
www.njr.com
0.1
1
Output Voltage [Vrms]
10
- 11 -
NJU77550/NJU77551/NJU77552/NJU77554
■ TYPICAL CHARACTERISTICS
Total Harmonic Distortion + Noise [%]
1
THD+N vs. Frequency
No Phase Reversal
V+ / V− = ±2.5V, VO = 1.5Vrms, GV = 2, RF = 10kΩ, CL = 10pF
V+ = 5V, GV = 1, RL = 100kΩ, CL = 100pF
Voltage [1V / div]
Input
0.1
0.01
Output
0.001
10
100
1k
10k
Frequency [Hz]
100k
Time [250μs / div]
Pulse Response
Slew Rate vs. Temperature
V+ = 5V, GV = 1, RL = 100kΩ, CL = 100pF, Ta = 25°C
RL = 100kΩ, CL = 100pF
1.6
1.4
Fall (V+ = 1.8V)
Voltage [1V / div]
Rise
Slew Rate [V/μs]
INPUT
(V+
= 1.8V)
1.2
1.0
0.8
0.6
Fall (V+ = 5V)
OUTPUT
0.4
Rise
(V+
= 5V)
-75 -50 -25 0 25 50 75 100 125 150
Ambient Temperature [°C]
Voltage Noise Density vs. Frequency
0.1Hz to 10Hz Voltage Noise Density
V+ / V− = ±2.5V
V+ / V− = ±2.5V
100
10
1
ver.3.0
Time [10μs / div]
Voltage [0.5μV / div]
Equivalent Input Noise Voltage [nV / √Hz]
0.2
10
100
1k
Frequency [Hz]
10k
100k
www.njr.com
Time [1s / div]
- 12 -
NJU77550/NJU77551/NJU77552/NJU77554
■ TYPICAL CHARACTERISTICS
Channel Separation vs. Frequency
V+ / V− = ±2.5V
0
Channel Separation [dB]
-20
-40
-60
-80
-100
-120
-140
-160
-180
10
ver.3.0
100
1k
10k
Frequency [Hz]
100k
1M
www.njr.com
- 13 -
NJU77550/NJU77551/NJU77552/NJU77554
■ TEST CIRCUITS
● ISUPPLY
● VIO, CMR, SVR
RG = 50Ω, RF = 50kΩ
V+
RF
A
V+
RG
VO
RG
VCOM
VCOM
V-
RF
VVS=V+-V-
● VOH, VOL
● GBW
VOH; Vin+ = 1V, Vin- = 0V, VCOM = V+ / 2
RG = 1kΩ, RF = 100kΩ
+
VOL; Vin+ = 0V, Vin- = 1V, VCOM = V / 2, VRF
V+
V+
RG
VO
VO
RL
Vin+
Vin-
V-
50Ω
VCOM
V-
CL
● SR
RL = 100kΩ
90%
V+
Vo
VO
50Ω
ver.3.0
V-
RL
90%
ΔV ΔV
10%
Δt
Δt
10%
CL
www.njr.com
- 14 -
NJU77550/NJU77551/NJU77552/NJU77554
■ APPLICATION NOTE
Single and Dual Supply Voltage Operation
The NJU7755x series works with both single supply and dual
supply when the voltage supplied is between V+ and V−.
These amplifiers operate from single 1.8V to 5.5V supply
and dual ±0.9V to ±2.75V supply. The power supply pin
should have bypass capacitor (i.e. 0.1µF).
No Phase Reversal
The NJU7755x series are designed to prevent phase
reversal at the input voltage above the supply voltage.
Figure1 shows no phase reversal characteristics with the
input voltage exceeding the supply voltage.
Rail-to-Rail Input
The input stage of NJU7755x series has two input differential
pairs, PMOS and NMOS (Figure3). When the common-
mode input voltage is from 200mV below the negative supply
voltage to the typically (V+) − 1.3V, the PMOS pair is active.
When the common-mode input voltage close to the positive
supply, typically (V+) − 1.3V to 200mV above positive supply,
the NMOS pair is active. In the transition region, the
performance of offset voltage, as shown in figure4, offset
voltage drift, CMR, SVR and THD is slightly degraded.
No Phase Reversal
V+ = 5V, GV = 1, RL = 100kΩ, CL = 100pF
+INPUT
Input
-INPUT
Voltage [1V / div]
ESD
Protection
ESD
Protection
Figure3. Simplified Schematic of Input Stage
Input Offset Voltage
vs. Common-Mode Input Voltage
Output
V+ = 5V
4
3
Figure1. No phase reversal
Power-on Time
The NJU7755x series typically require a power-on time of
20μs (Figure2). Power-on time depends on the supply
voltage, bypass capacitor, impedance of supply source and
impedance other devices. While settling time, IC is unstable,
such as output voltage, input offset voltage and slew rate.
Input Offset Voltage [mV]
Time [250μs / div]
1
0
-1
Ta = −55°C
Ta = 25°C
-2
-3
-4
-1
0
1
2
3
4
5
Common-Mode Input Voltage [V]
6
Figure4. Offset Voltage change
with common-mode input voltage.
Power-on Time
2.1
Ta = 125°C
2
V+ = 1.8V with 0.1μF bypass capacitor, GV = 0dB, Ta = 25°C
1.8
For the best performance design is inverting amplifier shown
in Figure5. Inverting amplifier has a constant common-mode
voltage equal to Vref. If Vref voltage is constant and is
chosen to avoid transition region, output will be best linearity
performance.
V+
Voltage [V]
1.5
1.2
VO (VIN = 1.5V)
0.9
0.6
R2
VO (VIN = 0.3V)
R1
0.3
Vin
Vout
0
-10
0
10
20
Time [μsec]
30
40
VCOM = Vref
Figure2. Power on time
Vref
Figure5. Inverting Amplifier
ver.3.0
www.njr.com
- 15 -
NJU77550/NJU77551/NJU77552/NJU77554
■ APPLICATION NOTE
Input Tolerant
In general, common OpAmp is protected by internal ESD
diode that is connected from input pin to both the positive
and negative power supply. In a buffer configuration, when
input exceeds either supply voltage, ESD diode will be
forward biased and current. If the current is high enough,
even when input current over long periods of time or even
short periods of time, can shift the electrical characteristics
beyond the data sheet's guaranteed limits, or cause a
permanent failure of the op amp.
The input of the NJU7755x series has an ESD protection as
shown in Figure 3. The input bias current is minimized in the
input voltage even in operating voltage range and exceeding
the V+ supply, and the OpAmp is protected from overvoltage
current (Figure6).
The maximum input voltage is absolute maximum rating of
V− + 7V, but usually recommend design so that the input
voltage is up to V− + 5.5V.
V+
D1
D2
R1
V1
OUTPUT
V2
R2
V-
(R1, R2) >
(R1, R2) >
V - -(V1, V2)
10mA
(V1, V2)-V +
IF
IF :Forward current of external diode.
Figure7. Example of input protection
Input Bias Currentvs. Input Voltage
V+ = 1.8V, V− = 0V, Ta = 25°C
Power Supply Protection for Overvoltage Condition
In general, many power supplies cannot sink current. If
nothing within the circuit can sink the overvoltage current, if
the overvoltage occurs with the supplies powered on, in the
ESD diode protection OpAmp, the supply voltage can
exceed the intended operating voltage of the system. Even if
the overvoltage occurs with the system powered off, the
overvoltage current can unintentionally power up the OpAmp
or system. NJU7755x series prevents the positive
overvoltage current flowing from input pin to positive supply
pin, prevents rising the supply voltage, and prevents
malfunctioning with OpAmp or system. Figure8 shows the
output voltage when applying 5V peak to peak overvoltage to
the input pin when the power supply V+ is 0V, 3V. Due to the
input tolerant, the output voltage is clamped at V+ (0V, 3V).
750
Operating
Voltage
Overvoltage Input
500
250
0
0
1
2
3
4
5
Input Voltage [V]
6
7
NJU7755x series protects the input pin from overvoltage by
shunting the overvoltage current to the V− supply rail.
When the input voltage for V− − 0.3V to V− + 7V, the ESD
protection is not activate and minimize the input bias current
(Figure6).
For the input voltage 300mV below the negative supply
voltage, the ESD protection operates to protect the input
terminal. At this moment, the current flowing in protection
element is allowed up to 10 mA.
Momentary voltages above V− + 7V, the ESD protection also
activate, and clamp inputs, but cannot protect against
overvoltage excepting ESD.
V+(0V)
In some applications, it may be necessary to prevent
excessive overvoltage. Figure6 is example to protect input
transistors. The external resistors R1, R2 limit the current
through external diodes D1, D2.
ver.3.0
VIN
(5V)
VIN = 5V
Voltage [1V / div]
Input Bias Current [pA]
1000
www.njr.com
VOUT
VO (V+ = 3V)
0
VO (V+ = 0V)
Time [200μs / div]
- 16 -
NJU77550/NJU77551/NJU77552/NJU77554
■ APPLICATION NOTE
Power Supply Protection for Overvoltage Condition
(Continues)
Input tolerant can be applied to the input buffer of the ADC
(Figure9).
Gain peaking vs. Frequency
V+ = 5V, GV = 0dB, CL = 100pF
10
8
V+
RISO = 0Ω
6
VOUT
VIN
Gain [dB]
4
ADC
RISO = 1kΩ
2
0
-2
-4
RISO = 2kΩ
-6
Figure9. ADC buffer with input tolerant
-8
RISO = 10kΩ
-10
10k
Capacitive Load
The NJU7755x series can use at unity gain follower, but the
unity gain follower is the most sensitive configuration to
capacitive loading. The combination of capacitive load placed
directly on the output of an amplifier along with the output
impedance of the amplifier creates a phase lag which in turn
reduces the phase margin of the amplifier.
If phase margin is significantly reduced, the response will
cause overshoot and ringing in the step response.
The NJU7755x series is unity gain stable for capacitive loads
of 100pF. To drive heavier capacitive loads, an isolation
resistor, RISO as shown Figure10, should be used. RISO
improves the feedback loop’s phase margin by making the
output load resistive at higher frequencies. The larger the
value of RISO, the more stable the output voltage will be.
However, larger values of RISO result in reduced output
swing, reduced output current drive and reduced frequency
bandwidth (Figure11).
100k
1M
Frequency [Hz]
10M
Figure12 shows the isolation circuit with RISO, RF and CC.
Minimize the effect of voltage drop due to RISO and output
current.
RF
CC
V+
RISO
VOUT
VIN
CL
V-
10R ISO CL < R F CC
R ISO is more than 300Ω
Figure12. Isolating capacitive load with RISO, RF and CC
V+
R
Vin
ISO
Vout
C
L
Terminating unused OpAmps
Examples of common methods of terminating an
uncommitted OpAmp are shown in Figure13. Improper
termination can be result increase supply current, heating
and noise in OpAmps.
V-
Figure10. Isolating capacitive load
V+
V+
V+
R1
Vref
R2
Figure13. Terminating unused OpAmps
ver.3.0
www.njr.com
- 17 -
NJU77550/NJU77551/NJU77552/NJU77554
■ APPLICATION NOTE
Differential Amplifier
Figure15 shows a one OpAmp differential amplifier that
consists of the single OpAmp and four external resistors.
Differential amplifier amplifies the difference between its two
input pins, and rejects the common- mode input voltage at
both input pins. This is used in variety of applications
including current sensing, differential to single-end converter,
isolation amplifier to remove common-mode noise.
Instrumentation Amplifier
The instrumentation amplifier is suitable for requiring high
input impedance and high common mode noise rejection at
high gains. Figure16 and Figure17 is instrumentation
amplifier using two or three OpAmp. Supply the reference
voltage (Vref) with a low impedance source to keep
accuracy.
RG
R2
R1
R2
R3
R4
Vout
R1
V1
Vout
Vref
V2
R3
R4
V1
V2
R4
R1+R2 R4
R2
2R4
Vout= ቀ1+R3+ R ቁ (V2-V1)+Vref
Vref
R1=R4, R2=R3
R1+R2 R3
Vout= ቀR3+R4ቁ R1V2- R1V1+ ቀR3+R4ቁ R1Vref
G
CMR R_error ≈ 20log ൭
R1=R3, R2=R4
R2
Vout=R1(V2-V1)+ Vref
1+
R4 2R4
+
R3 R G
4R error
൱
Figure16. Instrumentation Amplifier with two OpAmp
Figure15. Differential Amplifier
The differential amplifier’s common-mode rejection ratio
(CMR) is primarily determined by resistor mismatches, not by
the OpAmp’s CMR. Ideally, the resistors are chosen such
that R2/R1 = R4/R3. The CMR due to the resistors in
differential amplifier can be calculated using the below
formula:
R4
V1
R5
R2
Vout
R1
R3
CMR ୖ_ୣ୰୰୭୰ ≈ 20log ൬
భశ
మ
భ
ସୖ౨౨౨
൰
V2
CMR ୖ_ୣ୰୰୭୰ = CMR due only to the resistors
R ୣ୰୰୭୰ = Resistor′s tolerance
R6
R7
Vref
Example:
R2 / R1 = 1 and Rerror = 0.1%, then CMR = 54dB
R2 / R1 = 1 and Rerror = 1%, then CMR = 34dB
If using resistors with 1% tolerance and gain = 1, the CMR
will only be 34dB.
2R2
R5
Vout= ቀ1+ R1 ቁ ቀR4ቁ +Vref
R2=R3, R4=R6, R5=R7
CMR R_error ≈ 20log ቆ
R5
1+
R1+2R2
R4
×
ቇ
R1
4R error
Figure17. Instrumentation Amplifier with three OpAmp
ver.3.0
www.njr.com
- 18 -
NJU77550/NJU77551/NJU77552/NJU77554
■ APPLICATION NOTE
Current Sensing
Current sensing applications are one such application in a
wide range of electronic applications and mostly used for
feedback control systems, including power metering battery
life indicators and chargers, over- current protection and
supervising circuit, automotive, and medical equipment. In
such applications, it is desirable to use a shunt with very low
resistance to minimize the series voltage drop and minimizes
wasted power, and allows the measurement of high current.
The NJU7755x series is ideal for these current sensing
applications.
Figure18 shows a high-side current sensing circuit, and
Figure19 shows a low-side current sensing circuit. The
NJU7755x series has rail-to-rail input and output
characteristics, thus allows the both of high-side and low-side
current sensing circuit. Futuremore, low supply current of
50µA/ch can save the power at battery applications.
The differential amplifier’s common-mode rejection ratio
(CMR) is primarily determined by resistor mismatches. For
details, refer to differential amplifiers in the application note.
Rs
Transimpedance Amplifier
The features high input impedance with CMOS input and low
power can be used for transimpedance amplifier applications
shown in Figure20. The output voltage of amplifier is given
by the equation VOUT = IIN∙RF. Since the output voltage swing
of amplifier is limited, RF should be selected such that all
possible values of IIN can be detected.
CF
RF
V+
IIN
VVB
CD: photodiode capacitance
CIN: OpAmp input capacitance
Figure20. Transimpedance amplifier
I
Power
Supply
RF
Load
V+
RG
Vout
RG
The CD, CIN and RF generate a phase lag which causes gainpeaking and can destabilized circuit. The essential
component for obtaining a maximally flat response is a
feedback capacitor CF. CF is usually added in parallel with RF
to maintain circuit stability and to control the frequency
response. To maximally flat, 2nd order response, RF and CF
should be chosen by using below equation.
RF
CF =ඨ
Figure18. High-Side Current Sensing
Rs
CIN +CD
GBW×2π×R F
Sallen-Key 2nd-Order Active Low-Pass Filter
The Sallen-Key 2nd-order active low-pass filter is shown in
Figure21. It can be used for a multiple pole filter required high
attenuation.
Power Supply
Load
VOUT
CIN
CD
C1
I
R1
R2
RF
C2
V+
RG
R4
Vout
R3
RG
RF
R=R1=R2 , C=C1=C2
Q: Quality factor , GDC : DC Gain
f-3dB =
Figure19. Low-Side Current Sensing
1
2πRC
, Q=
1
3-GDC
R4
, GDC =1+ R3 =3-
1
Q
Figure21. Sallen-Key 2nd-Order Low-Pass Filter
ver.3.0
www.njr.com
- 19 -
NJU77550/NJU77551/NJU77552/NJU77554
■ APPLICATION NOTE
EMIRR (EMI Rejection Ratio) Definition
EMIRR is a parameter indicating the EMI robustness of an
OpAmp. The definition of EMIRR is given by the following
equation1.
VRF_PEAK
EMIRR=20∙log ൬
൰
|∆VIO |
--- eq.1
VRF_PEAK : RF Signal Amplitude [VP]
∆VIO : Input offset voltage shift quantity [V]
The tolerance of the RF signal can be grasped by measuring
an RF signal and offset voltage shift quantity. Offset voltage
shift is small so that a value of EMIRR is big. And it
understands that the tolerance for the RF signal is high. In
addition, about the input offset voltage shift with the RF
signal, there is the thinking that influence applied to the input
terminal is dominant. Therefore, generally the EMIRR
becomes value that applied an RF signal to +INPUT
terminal.
EMIRR vs. Frequency
140
V+ / V− = ±2.5V, Ta = 25°C
120
EMIRR [dB]
100
80
60
40
20
0
10M
100M
1G
Frequency [Hz]
6G
*For details, refer to “Application Note for EMI Immunity" in
our HP: http://www.njr.com/
ver.3.0
www.njr.com
- 20 -
NJU77550/NJU77551/NJU77552/NJU77554
SOT-23-5
Unit: mm
■ PACKAGE DIMENSIONS
2.9 ± 0.2
0 ∼15 °
1.9 ±0.2
4
0.6
2.8 ± 0.2
1.6
+0.2
-0.1
0.2
5
2
1
3
0.1
0.95 ±0.1
+ 0. 1
- 0. 03
0.4 ±0.1
0.1
0.1max
1.1 ± 0.1
0.6max
■ EXAMPLE OF SOLDER PADS DIMENSIONS
2.4
1 .0
0 .7
0.95
ver.3.0
0.95
www.njr.com
- 21 -
NJU77550/NJU77551/NJU77552/NJU77554
SC-88A
Unit: mm
0.4 25 ± 0.2
■ PACKAGE DIMENSIONS
2.0 ± 0.2
1.3 ± 0.2
5
2
(0.2 45 )
2 .1 ± 0.2
1.25 ± 0 .1
0.23
+0.1
-0.03
4
3
0 .425 ± 0. 2
1
0.13
+0.1
-0.05
0 ∼10 °
0.1
+0.05
-0.15
0.9 5
0.05 ± 0.05
0.9 ± 0. 1
+0.2
0.2 -0.1
0.65 ±0.07
■ EXAMPLE OF SOLDER PADS DIMENSIONS
1.9
0.8
0.3
0.65
ver.3.0
0.65
www.njr.com
- 22 -
NJU77550/NJU77551/NJU77552/NJU77554
SOP8
Unit: mm
■ PACKAGE DIMENSIONS
DETAIL F
D
T
e/2
5
8
E
E1
1
4
U
h ×45 °
6 ×e
∞0 M
U M
θ
A2
CCC Z
A
A1
Z
S EA TI NG
P L AN E
8 ×b
bbb M
DESC RIPTION
TOTAL THI CKNESS
SYMBOL
A
MIN
.053
IN CH
N CM
MAX
.069
STAND OF F
A1
.004
.010
0. 10
0.25
MOL D THICKNE SS
LEA D WIDTH
A2
b
.049
. 014
.01 9
1.25
0.35
0.49
L/F THIC KNESS
C
.007
.010
0. 19
0.25
D
.189
.197
4. 80
5.00
E1
.150
.157
3.80
4.0 0
E
.228
.244
5. 80
BOD Y SIZE
LEAD PITC H
ver.3.0
e
.0 50 BSC
6.20
.015
.04 9
0.40
1.25
h
.010
.0 20
0.2 5
0.50
0°
5°
θ2
2°
7°
θ1
1.27 B SC
L
θ
θ1
Z U S T S
MI LLIMETER
MIN
NCM
MAX
1.3 5
1.75
7°
15 °
0°
5°
12 °
2°
7°
15 °
7°
LEAD EDGE OFFSET
LEAD OFFSET
∞O
bb b
.010
.010
0 .25
0.25
COPLANAR ITY
CCC
.004
0.1 0
θ2
C
12 °
www.njr.com
[0.25]
L
DETAIL F
- 23 -
NJU77550/NJU77551/NJU77552/NJU77554
SOP8
Unit: mm
■ EXAMPLE OF SOLDER PADS DIMENSIONS
0.72
5.72
1.27
1.27
3.81
ver.3.0
www.njr.com
- 24 -
NJU77550/NJU77551/NJU77552/NJU77554
MSOP8 (TVSP8)
JEDEC MO-187-DA/THIN TYPE
Unit: mm
■ PACKAGE DIMENSIONS
2.9 ±0.1
0 ∼10゚
1
0 .55 ± 0.1
4.0 ± 0.2
5
2.8 ± 0.1
8
4
0.127 +0.05
-0.03
0.65
0.08
0.2 ±0.05
0.05 M
0 .1 ± 0. 05
1.0max
0.475 ±0.1
■ EXAMPLE OF SOLDER PADS DIMENSIONS
0.65
3.5
1 .0
0.23
1.95
ver.3.0
www.njr.com
- 25 -
NJU77550/NJU77551/NJU77552/NJU77554
DFN8-U1 (ESON8-U1)
Unit: mm
■ EXAMPLE OF SOLDER PADS DIMENSIONS
■ PACKAGE DIMENSIONS
0.28
0.5
2.20
1. 02
2.0 ±0.05
0.31
2.0 ± 0.05
0.075
0.01 +0.010
-0.008
S
0.397 ±0.03
1.54
1.78
S
S
0.05
A
0.21 -0.04
+0.06
06
1.6 +- 0.
0. 0 4
0.25
C0
.3
3-
R0
.3
1.08 -0.04
+0.06
B
0.5
6
0.26 +- 00 .0
.0 4
ver.3.0
φ 0.05
M
S
AB
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NJU77550/NJU77551/NJU77552/NJU77554
SSOP14
Unit: mm
■ PACKAGE DIMENSIONS
5.0
0 ∼10゚
+0.3
-0.1
7
+0.1
1 .1 5 ± 0.1
0 .65
0. 15 -0.05
0.1 ± 0 .1
0. 67 max
0.10
0.22 ±0.1
0.5 ± 0.2
4.4 ± 0.2
1
6.4 ± 0.3
8
14
0.10 M
■ EXAMPLE OF SOLDER PADS DIMENSIONS
0.35
5.90
1. 00
0.65
3.90
ver.3.0
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NJU77550/NJU77551/NJU77552/NJU77554
SOT-23-5
Unit: mm
■ PACKING SPEC
TAPING DIMENSIONS
SYMBOL
A
B
D0
D1
E
F
P0
P1
P2
T
T2
K0
W
W1
Feed direction
P0
φD0
T
B
W1
W
F
E
P2
A
K0
φD1
P1
T2
DIMENSION
3.3±0.1
3.2±0.1
1.55
1.05
1.75±0.1
3.5±0.05
4.0±0.1
4.0±0.1
2.0±0.05
0.25±0.05
1.82
1.5±0.1
8.0±0.3
5.5
REMARKS
BOTTOM DIMENSION
BOTTOM DIMENSION
THICKNESS 0.1MAX
REEL DIMENSIONS
W1
SYMBOL
A
B
C
D
E
W
W1
E
A
D
B
C
DIMENSION
φ180±1
φ 60±1
φ 13±0.2
φ 21±0.8
2±0.5
9±0.5
1.2±0.2
W
TAPING STATE
Insert direction
Sealing with covering tape
(TE1)
Drawing direction
Empty tape
Device attaching tape
more than 20pitch
3000pcs/reel
Empty tape
Covering tape
more than 20pitch reel more than 1 round
PACKING STATE
Label
Label
Put a reel into a box
ver.3.0
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NJU77550/NJU77551/NJU77552/NJU77554
SC-88A
Unit: mm
■ PACKING SPEC
TAPING DIMENSIONS
Feed direction
P0
φ D0
SYMBOL
A
B
D0
D1
E
F
P0
P1
P2
T
T2
W
W1
T
B
W1
W
F
E
P2
A
P1
T2
φ D1
DIMENSION
2.3±0.1
2.5±0.1
1.55±0.05
1.05±0.05
1.75±0.1
3.5±0.05
4.0±0.1
4.0±0.1
2.0±0.05
0.25±0.05
1.3±0.1
8.0±0.2
5.5
REMARKS
BOTTOM DIMENSION
BOTTOM DIMENSION
THICKNESS 0.1max
REEL DIMENSIONS
W1
SYMBOL
A
B
C
D
E
W
W1
E
A
D
B
C
DIMENSION
φ180±1
φ 60±1
φ 13±0.2
φ 21±0.8
2±0.5
9±0.5
1.2±0.2
W
TAPING STATE
Insert direction
Sealing with covering tape
(TE1)
Drawing direction
Empty tape
Device attaching tape
more than 20pitch
3000pcs/reel
Empty tape
Covering tape
more than 20pitch reel more than 1 round
PACKING STATE
Label
Label
Put a reel into a box
ver.3.0
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NJU77550/NJU77551/NJU77552/NJU77554
SOP8
Unit: mm
■ PACKING SPEC
REEL DIMENSIONS / TAPING DIMENSIONS
8
12
330
F e e d d i r e c t i on
8
12.4
TAPING STATE
Insert direction
Sealing with covering tape
(TE2)
Feed direction
Empty tape
Devices
Empty tape
Trailer 60pcs
2500pcs/reel
Leader 60pcs
PACKING STATE
Label
Label
ESD Label
ver.3.0
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NJU77550/NJU77551/NJU77552/NJU77554
MSOP8 (TVSP8)
MEET JEDEC MO-187-DA/THIN
Unit: mm
■TYPE
PACKING SPEC
TAPING DIMENSIONS
F ee d d ir ec ti on
P2
P0
φD0
B
W1
W
F
E
T
A
T2
φD1
P1
SYMBOL
A
B
D0
D1
E
F
P0
P1
P2
T
T2
W
W1
DIMENSION
4.4
3.2
1.5 +0.1
0
1.5 +0.1
0
1.75±0.1
5.5±0.05
4.0±0.1
8.0±0.1
2.0±0.05
0.30±0.05
1.75 (MAX.)
12.0±0.3
9.5
REMARKS
BOTTOM DIMENSION
BOTTOM DIMENSION
THICKNESS 0.1max
REEL DIMENSIONS
W1
SYMBOL
A
B
C
D
E
W
W1
B
D
A
C
E
DIMENSION
φ254±2
φ100±1
φ 13±0.2
φ 21±0.8
2±0.5
13.5±0.5
2.0±0.2
W
TAPING STATE
Insert direction
Sealing with covering tape
(TE1)
Devices
Empty tape
Feed direction
more than 20pitch
2000pcs/reel
Empty tape
Covering tape
more than 20pitch reel more than 1round
PACKING STATE
Label
Label
Put a reel into a box
ver.3.0
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NJU77550/NJU77551/NJU77552/NJU77554
DFN8-U1 (ESON8-U1)
Unit: mm
■ PACKING SPEC
TAPING DIMENSIONS
Feed direction
P0
φD0
SYMBOL
A
B
D0
D1
E
F
P0
P1
P2
T
T2
K0
W
W1
T
B
W1
W
F
E
P2
K0
A
T2
φD1
P1
DIMENSION
2.25±0.05
2.25±0.05
1.5 +0.1
0
0.5±0.1
1.75±0.1
3.5±0.05
4.0±0.1
4.0±0.1
2.0±0.05
0.25±0.05
1.00±0.07
0.65±0.05
8.0±0.2
5.5
REMARKS
BOTTOM DIMENSION
BOTTOM DIMENSION
THICKNESS 0.1max
REEL DIMENSIONS
W1
SYMBOL
A
B
C
D
E
W
W1
E
B
A
D
C
DIMENSION
0
φ180 -1.5
φ 60 +10
φ 13±0.2
φ 21±0.8
2±0.5
9 +0.3
0
1.2
W
TAPING STATE
Insert direction
Sealing with covering tape
(TE3)
Feed direction
Empty tape
Devices
more than 40 pitch
3000pcs/reel
Empty tape
Covering tape
more than 25 pitch reel more than 1 round
PACKING STATE
Label
Label
Put a reel into a box
ver.3.0
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NJU77550/NJU77551/NJU77552/NJU77554
SSOP14
Unit: mm
■ PACKING SPEC
TAPING DIMENSIONS
Feed direction
φD0
P0
T
B
W1
W
F
E
P2
SYMBOL
A
B
D0
D1
E
F
P0
P1
P2
T
T2
W
W1
A
φD1
P1
T2
DIMENSION
6.95
5.4
1.55±0.05
1.55±0.1
1.75±0.1
5.5±0.05
4.0±0.1
8.0±0.1
2.0±0.05
0.3±0.05
2.2
12.0±0.3
9.5
REMARKS
BOTTOM DIMENSION
BOTTOM DIMENSION
THICKNESS 0.1max
REEL DIMENSIONS
W1
SYMBOL
A
B
C
D
E
W
W1
B
D
A
C
E
DIMENSION
φ254±2
φ100±1
φ 13±0.2
φ 21±0.8
2±0.5
13.5±0.5
2±0.2
W
TAPING STATE
Insert direction
Sealing with covering tape
(TE1)
Empty tape
Feed direction
PACKING STATE
more than 20pitch
Devices
2000pcs/reel
Label
Empty tape
Covering tape
more than 20pitch reel more than 1round
Label
Put a reel into a box
ver.3.0
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- 33 -
NJU77550/NJU77551/NJU77552/NJU77554
■ RECOMMENDED MOUNTING METHOD
INFRARED REFLOW SOLDERING PROFILE
f
260°C
e
230°C
220°C
d
a
b
180°C
c
d
e
f
g
150°C
Temperature ramping rate
Pre-heating temperature
Pre-heating time
Temperature ramp rate
220°C or higher time
230°C or higher time
Peak temperature
Temperature ramping rate
1 to 4°C/s
150 to 180°C
60 to 120s
1 to 4°C/s
shorter than 60s
shorter than 40s
lower than 260°C
1 to 6°C/s
The temperature indicates at the surface of mold package.
Room
Temp.
a
b
c
g
■ REVISION HISTORY
DATE
REVISION
April 10, 2018
1.0
New Release
May 27, 2019
2.0
Added DFN8-U1 (ESON8-U1) package.
Changed status NJU77550 and NJU77551.
Thermal Characteristics: Changed values of Θja.
Added Power Dissipation vs. Ambient Temperature.
Electrical Characteristics: Changed value and unit in High-level Output Voltage.
Typical Characteristics: Deleted Figure of EMIRR vs. Frequency.
Application Note: Changed Figure of EMIRR vs. Frequency in EMIRR (EMI Rejection Ratio)
Definition.
Recommended Mounting Method: Deleted Flow and Iron Soldering Profile.
September 5, 2019
2.1
Added note of input voltage in ABSOLUTE MAXIMUM RATINGS.
Added condition of input voltage in RECOMMENDED OPERATING CONDITIONS.
November 15, 2019
2.2
Changed status NJU77552KU1
July 22, 2020
3.0
Updated datasheet format.
Updated Features and Application note.
ver.3.0
CHANGES
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NJU77550/NJU77551/NJU77552/NJU77554
[ CAUTION ]
1.
NJR strives to produce reliable and high quality semiconductors. NJR’s semiconductors are intended for specific applications and
require proper maintenance and handling. To enhance the performance and service of NJR's semiconductors, the devices,
machinery or equipment into which they are integrated should undergo preventative maintenance and inspection at regularly
scheduled intervals. Failure to properly maintain equipment and machinery incorporating these products can result in catastrophic
system failures
2.
The specifications on this datasheet are only given for information without any guarantee as regards either mistakes or omissions.
The application circuits in this datasheet are described only to show representative usages of the product and not intended for the
guarantee or permission of any right including the industrial property rights.
All other trademarks mentioned herein are the property of their respective companies.
3.
To ensure the highest levels of reliability, NJR products must always be properly handled.
The introduction of external contaminants (e.g. dust, oil or cosmetics) can result in failures of semiconductor products.
4.
NJR offers a variety of semiconductor products intended for particular applications. It is important that you select the proper
component for your intended application. You may contact NJR's Sale's Office if you are uncertain about the products listed in this
datasheet.
5.
Special care is required in designing devices, machinery or equipment which demand high levels of reliability. This is particularly
important when designing critical components or systems whose failure can foreseeably result in situations that could adversely
affect health or safety. In designing such critical devices, equipment or machinery, careful consideration should be given to
amongst other things, their safety design, fail-safe design, back-up and redundancy systems, and diffusion design.
6.
The products listed in this datasheet may not be appropriate for use in certain equipment where reliability is critical or where the
products may be subjected to extreme conditions. You should consult our sales office before using the products in any of the
following types of equipment.
7.
8.
9.
ver.3.0
Aerospace Equipment
Equipment Used in the Deep Sea
Power Generator Control Equipment (Nuclear, steam, hydraulic, etc.)
Life Maintenance Medical Equipment
Fire Alarms / Intruder Detectors
Vehicle Control Equipment (Airplane, railroad, ship, etc.)
Various Safety Devices
NJR's products have been designed and tested to function within controlled environmental conditions. Do not use products under
conditions that deviate from methods or applications specified in this datasheet. Failure to employ the products in the proper
applications can lead to deterioration, destruction or failure of the products. NJR shall not be responsible for any bodily injury, fires
or accident, property damage or any consequential damages resulting from misuse or misapplication of the products. The products
are sold without warranty of any kind, either express or implied, including but not limited to any implied warranty of merchantability
or fitness for a particular purpose.
Warning for handling Gallium and Arsenic (GaAs) Products (Applying to GaAs MMIC, Photo Reflector). These products use Gallium
(Ga) and Arsenic (As) which are specified as poisonous chemicals by law. For the prevention of a hazard, do not burn, destroy, or
process chemically to make them as gas or power. When the product is disposed of, please follow the related regulation and do
not mix this with general industrial waste or household waste.
The product specifications and descriptions listed in this datasheet are subject to change at any time, without notice.
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