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SK110BHM4G

SK110BHM4G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    DO214AA

  • 描述:

    DIODE SCHOTTKY 100V 1A DO214AA

  • 详情介绍
  • 数据手册
  • 价格&库存
SK110BHM4G 数据手册
SK12B – SK115B Taiwan Semiconductor 1A, 20V - 150V Schottky Barrier Surface Mount Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS Ideal for automated placement Guard ring for overvoltage protection High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 1 A VRRM 20 - 150 V IFSM 30 A TJ MAX 125, 150 °C Package DO-214AA (SMB) Configuration Single die APPLICATIONS ● ● ● ● Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.093g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device Repetitive peak reverse voltage VRRM Reverse voltage, total rms value VR(RMS) Forward current Surge peak forward current, 8.3ms single half sine-wave superimposed on rated load Critical rate of rise of off-state voltage SK SK SK SK SK SK SK SK UNIT 12B 13B 14B 15B 16B 19B 110B 115B SK SK SK SK SK SK SK SK 12B 13B 14B 15B 16B 19B 110B 115B 20 30 40 50 60 90 100 150 V 14 21 28 35 42 63 70 105 V IF 1 A IFSM 30 A dV/dt 10,000 V/µs Junction temperature TJ Storage temperature TSTG - 55 to +125 - 55 to +150 - 55 to +150 1 °C °C Version: L2102 SK12B – SK115B Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-lead thermal resistance SYMBOL TYP UNIT RӨJL 25 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) Reverse current @ rated VR Reverse current @ rated VR Reverse current @ rated VR (2) (2) (2) SK12B SK13B SK14B SK15B SK16B SK19B SK110B SK115B SK12B SK13B SK14B SK15B SK16B SK19B SK110B SK115B SK12B SK13B SK14B SK15B SK16B SK19B SK110B SK115B SK12B SK13B SK14B SK15B SK16B SK19B SK110B SK115B IF = 1A, TJ = 25°C TJ = 25°C SYMBOL VF TYP MAX UNIT - 0.50 V - 0.75 V - 0.85 V - 0.95 V - 500 µA - 100 µA - 10 mA - 5 mA - - mA - - mA - - mA - 2 mA IR TJ = 100°C IR TJ = 125°C IR Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING SK1xB DO-214AA (SMB) 3,000 / Tape & Reel Notes: 1. "x" defines voltage from 20V(SK12B) to 150V(SK115B) 2 Version: L2102 SK12B – SK115B Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 SK15B-SK115B 1 CAPACITANCE (pF) SK12B-SK14B 0.5 100 f=1.0MHz Vsig=50mVp-p 0 10 25 50 75 100 125 150 0.1 1 LEAD TEMPERATURE (°C) Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) 100 10 TJ=125oC 1 0.1 TJ=75oC 0.01 TJ=25oC 0.001 0 20 40 60 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics SK12B-SK14B SK15B-SK16B SK110B-SK115B 10 80 10 10 UF1DLW 1 TJ=125°C TJ=25°C 0.1 1 (A) AVERAGE FORWARD CURRENT (A) 1.5 SK12B-SK14B SK15B-SK16B SK19B-SK115B 0.01 Pulse width 0.001 0.3 0.4 0.5 0.6 0.7 Pulse width 300μs 0.81% duty 0.9 cycle 1 1.1 0.1 100 0.2 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.4 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) 3 Version: L2102 1.2 SK12B – SK115B Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Maximum Non-Repetitive Forward Surge Current PEAK FORWARD SURGE CURRENT (A) 40 8.3ms single half sine wave 30 20 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig.6 Typical Transient Thermal Characteristics TRANSIENT THERMAL IMPEDANCE (°C/W) 100 10 1 0.1 0.01 0.1 1 10 100 T-PULSE DURATION(s) 4 Version: L2102 SK12B – SK115B Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AA (SMB) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: L2102 SK12B – SK115B Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: L2102
SK110BHM4G
1. 物料型号:文档涵盖了从SK12B到SK115B的多个型号,这些型号的整流器有不同的反向重复峰值电压(VRRM)等级,从20V到150V。

2. 器件简介:这些整流器适用于自动化放置,具有过压保护的护环,高浪涌电流能力,符合RoHS标准,无卤素,并且具有1级湿度敏感性。

3. 引脚分配:文档提供了DO-214AA(SMB)封装的引脚分配图,其中标示了阴极和阳极。

4. 参数特性:关键参数包括正向电流(IF)、反向重复峰值电压(VRRM)、浪涌峰值正向电流(IFSM)、最大结温(TJ MAX)等。

5. 功能详解:文档详细描述了整流器的电气规格,包括正向电压、反向电流等,并提供了在不同条件下的典型值和最大值。

6. 应用信息:这些整流器适用于开关电源(SMPS)、适配器、照明应用和转换器。

7. 封装信息:提供了DO-214AA(SMB)封装的详细机械数据,包括尺寸、重量、引脚镀锡等。

8. 绝对最大额定值:列出了不同型号整流器的绝对最大额定值,如反向重复峰值电压、正向电流、浪涌峰值正向电流等。

9. 热性能:提供了结到引脚的热阻值。

10. 订购信息:提供了订购代码、封装和包装信息。

11. 特性曲线:包括正向电流降额曲线、典型结电容、典型反向特性、典型正向特性、最大非重复正向浪涌电流和典型瞬态热特性。

12. 封装外形尺寸:提供了DO-214AA(SMB)封装的详细尺寸。

13. 建议的焊盘布局:提供了焊盘布局的推荐尺寸。

14. 标记图:解释了产品上的标记代码。

15. 注意事项:文档最后强调了产品规格可能会变更,且不承担任何因错误或不准确信息产生的责任。同时,指出这些产品不适用于医疗、救生或维持生命等应用。
SK110BHM4G 价格&库存

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