CGHV96050F2

CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Cree’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance. PN: CGHV96050F2 Package Type: 440217 Typical Performance Over 8.4 - 9.6 GHz (TC = 25˚C) Parameter 8.4 GHz 8.8 GHz 9.0 GHz 9.2 GHz 9.4 GHz 9.6 GHz Units Linear Gain 13.8 12.8 12.3 12.3 12.2 11.8 dB Output Power 85 77 81 82 75 75 W Power Gain 10.4 9.9 10.1 10.1 8.8 9.8 dB Power Added Efficiency 57 54 52 54 48 45 % Note: Measured in CGHV96050F2-AMP (838179) under 100 uS pulse width, 10% duty, Pin 39.0 dBm (7.9 W) Features Applications • • • • • • • • • • • 8.4 - 9.6 GHz Operation 80 W POUT typical 10 dB Power Gain 55% Typical PAE 50 Ohm Internally Matched PLZ .1CEN LK 9POS 1 J4 CONNECTOR ; SMB, Straight, JACK,SMD 1 W1 CABLE ,18 AWG, 4.2" 1 PCB, RF35, 2.5 X 3.0 X (0.020/0.250) 1 TRANSISTOR, CGHV96050F2 1 #2 SPLIT LOCKWASHER SS 4 2-56 SOC HD SCREW 1/4 SS 4 CGHV96050F2-AMP Demonstration Amplifier Circuit Rev 3.4 - February 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV96050F2 8 CGHV96050F2-AMP Demonstration Amplifier Circuit Schematic CGHV96050F2-AMP Demonstration Amplifier Circuit Outline Rev 3.4 - February 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV96050F2 9 CGHV96050F2 Power Dissipation De-rating Curve derating curve vs. Max TCase Power dissipation CW & Pulse (100 uS/ 10% duty) 100 90 Power dissipation (W) Power Dissipation (W) 80 70 Note 1 60 50 40 CW 30 Pulse 100uS / 10% 20 10 0 0 20 40 60 80 100 120 140 160 180 200 220 240 Flange Temperature (C) Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Temperature (See Page 2) Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500V) JEDEC JESD22 C101-C Rev 3.4 - February 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV96050F2 10 Product Dimensions CGHV96050F2 (Package Type — 440217) Rev 3.4 - February 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV96050F2 11 Part Number System CGHV96050F2 Package, Power Test Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Table 1. Parameter Value Units Upper Frequency1 9.6 GHz Power Output 50 W Package Flange - Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Table 2. Rev 3.4 - February 2021 Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV96050F2 12 Product Ordering Information Order Number Description Unit of Measure CGHV96050F2 GaN HEMT Each CGHV96050F2-AMP Test board with GaN HEMT Installed Each Rev 3.4 - February 2021 Image 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV96050F2 13 For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. © 2013 - 2021 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev 3.4 - February 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com