GTVA311801FA
Thermally-Enhanced High Power RF GaN on SiC HEMT
180 W, 50 V, 2700 – 3100 MHz
Description
The GTVA311801FA is a 180-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2700 to 3100 MHz frequecy band. It features
input matching, high efficiency, and a thermally-enhanced package with
earless flange.
GTVA311801FA
Package H-36275-4
Features
• GaN on SiC HEMT technology
• Broadband internal input matching
• Typical pulsed CW performance (class AB), 2700 –
3100 MHz, 50 V, 300 µs pulse width, 10% duty cycle
- Output power at P3dB = 180 W
- Drain efficiency = 65%
- Gain (P3dB) = 15.5 dB
• Capable of handling 10:1 VSWR @ 50 V, 150 W CW
output power
• Human Body Model Class 1B (per ANSI/ESDA/JEDEC
JS-001)
• Pb-free and RoHS compliant
RF Characteristics1
Pulsed CW Specifications (tested in Wolfspeed class AB test fixture)
VDD = 50 V, IDQ = 20 mA, POUT(PEAK) = 180 W, ƒ = 3100 MHz, pulse width = 128 µs, duty cycle = 10%
Characteristics
Symbol
Min
Typ
Max
Units
Gain
Gps
13.5
15.5
–
dB
Drain Efficiency
hD
56
60
–
%
Note 1: All published data at TCASE = 25°C unless otherwise indicated.
Rev. 4, October 2020
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2
GTVA311801FA
DC Characteristics
Characteristic
Conditions
Symbol
Min
Drain-source Breakdown Voltage
VGS = –8 V, ID = 10 mA
V(BR)DSS 150 — — V
Drain-source Leakage Current
VGS = –8 V, VDS = 10 V
Gate Threshold Voltage
VDS = 10 V, ID = 21 mA
IDSS
Typ
Max
Unit
— — 8.32 mA
VGS(th) –3.8 –3.0 –2.3 V
Recommended Operating Conditions
Parameter
Conditions
Operating Voltage
Gate Quiescent Voltage
VDS = 50 V, ID = 20 mA
Symbol
Min
Typ
Max
Unit
VDD 0 — 50 V
VGS(Q) — –3.0 — V
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source Voltage
VDSS 125 V
Gate-source Voltage
VGS
–10 to +2
V
Gate Current
IG 20 mA
Drain Current
ID 7.5 A
Junction Temperature
TJ 225 °C
Storage Temperature Range
TSTG
–65 to +150
°C
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values
may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For
reliable continuous operation, the device should be operated within the operating voltage range (VDD) specified above.
Thermal Chracteristics
Parameter
Thermal Resistance, Junction to Case (TCASE = 70°c, 150 W CW)
Rev. 4, October 2020
Symbol
Value
Unit
RqJC
1.16
°C/W
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3
GTVA311801FA
Electrical Characteristics When Tested in GTVA311801FA-V1
Characteristics
Symbol Min.
Typ.
Max.
Units
Conditions
RF Characteristics1 (TC = 25˚C, F = 2.7 - 3.1 GHz unless otherwise noted)
Output Power2
POUT
–
52
–
dBm
VDD = 50 V, IDQ = 20 mA, PIN = 37 dBm
Drain Efficiency2
η
–
60
–
%
VDD = 50 V, IDQ = 20 mA, PIN = 37 dBm
Gain2
G
–
15
–
dB
VDD = 50 V, IDQ = 20 mA, PIN = 37 dBm
1 Measured in the GTVA311801FA-V1 Application Circuit
2 Pulsed 300 μs, 10% Duty Cycle
Typical Performance of the GTVA311801FA-V1
Test conditions unless otherwise noted: VDD = 50 V, IDQ = 20 mA, PW = 300 us, DC = 10%, Operating Temp =
+25 °C, PIN = 37 dBm
Figure 2. Input Power vs Drain
F2: Pin vs Drain
Efficiency vs
Efficiency
as a Function
of Frequency
Frequency
Figure 1.F1:Pin
Input vs
Power
Gain as a
Gain vs
vs Frequency
Function of Frequency
70
18.0
60
Drain Efficiency (%)
18.5
Gain (dB)
17.5
17.0
16.5
16.0
2.7 GHz
2.9 GHz
3.1 GHz
15.5
15.0
20
22
24
26
28
30
32
34
50
40
30
20
2.7 GHz
2.9 GHz
3.1 GHz
10
36
0
38
20
22
24
Figure 3. Input Power vs Output Power
F3:asPin
vs PoutofvsFrequency
Frequency
a Function
30
32
Gate Current (mA)
40
30
20
2.7 GHz
2.9 GHz
3.1 GHz
-0.04
-0.06
-0.08
-0.10
-0.12
-0.14
22
24
26
28
30
32
Input Power (dBm)
Rev. 4, October 2020
38
2.7 GHz
2.9 GHz
3.1 GHz
-0.02
50
20
36
Frequency
0.00
10
34
Figure
4. vs
Input
Power
vs Gate
Current
F4: Pin
Peak
Drain
Current
vs
as a Function of Frequency
60
Output Power (dBm)
28
Input Power (dBm)
Input Power (dBm)
0
26
34
36
38
20
22
24
26
28
30
32
34
36
38
Input Power (dBm)
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GTVA311801FA
Typical Performance of the GTVA311801FA-V1
Test conditions unless otherwise noted: VDD = 50 V, IDQ = 20 mA, PW = 300 us, DC = 10%, Operating Temp =
+25 °C, PIN = 37 dBm
F5: Pin vs Peak Drain Current vs
Figure 5.
Input Power vs Peak Drain
Frequency
Current as a Function of Frequency
Peak Drain Current (A)
7
6
5
4
3
2
2.7 GHz
2.9 GHz
3.1 GHz
1
0
20
22
24
26
28
30
32
34
Input Power (dBm)
F6 Gain Vs Frequency
Figure 6. Gain vs Frequency
F7 Drain Efficiency Vs
Drain Efficiency (%)
65
15
Gain (dB)
38
Figure 7. Drain
Efficiency vs Frequency
Frequency
16
14
13
12
36
2.6
2.7
2.8
2.9
3.0
3.1
60
55
50
3.2
2.6
2.7
3.0
3.1
3.2
F9 Peak Drain Current Vs Frequency
F8 Output
Power
Figure
8. Output
PowerVs
vsFrequency
Frequency
Figure 9. Peak Drain Current vs Frequency
6.4
Peak Drain Current (A)
54
Output Power (dBm)
2.9
Frequency (GHz)
Frequency (GHz)
53
52
51
50
2.8
2.6
2.7
2.8
2.9
3.0
Frequency (GHz)
Rev. 4, October 2020
3.1
3.2
6.2
6.0
5.8
5.6
5.4
5.2
5.0
2.6
2.7
2.8
2.9
3.0
3.1
3.2
Frequency (GHz)
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5
GTVA311801FA
Typical Performance of the GTVA311801FA-V1
Test conditions unless otherwise noted: VDD = 50 V, IDQ = 200 mA, Operating Temp = +25 °C, PIN = -20 dBm
vs Frequency
FigureF10
10.Gain
S21 Wide
Band-Gain vs
Frequency
Gain
vs Frequency
Figure 11.F11
S21
Narrow
Band-Gain vs
Frequency
30
25
20
20
10
15
-10
S21 (dB)
S21 (dB)
0
-20
-30
-40
0
-10
-60
0
1
2
3
4
5
-15
6
2.3
2.5
3.1
3.3
3.5
3.7
3.9
F1313.
Output
RL vs Frequency
Figure
S22 Narrow
Band RL vs
Frequency
2
-4
-4
S22 (dB)
0
-2
-6
-8
-10
-6
-8
-10
-12
-12
-14
-14
0
1
2
3
4
5
-16
6
2.1
2.3
2.5
Frequency (GHz)
0
-2
-4
-4
-6
-6
S11 (dB)
0
-8
-10
-14
-14
-16
-16
4
Frequency (GHz)
Rev. 4, October 2020
3.5
3.7
3.9
-8
-12
3
3.3
-10
-12
2
3.1
Figure 15. S11 Narrow Band RL vs
Frequency
-2
1
2.9
F15 Input RL vs Frequency
F14 Input RL vs Frequency
0
2.7
Frequency (GHz)
Figure 14. S11 Wide Band RL vs
Frequency
S11 (dB)
2.9
Figure
12. S22RLWide
Band RL vs
F12 Output
vs Frequency
Frequency
0
-18
2.7
Frequency (GHz)
-2
-16
2.1
Frequency (GHz)
2
S22 (dB)
5
-5
-50
-70
10
5
6
-18
2.1
2.3
2.5
2.7
2.9
3.1
3.3
3.5
3.7
3.9
Frequency (GHz)
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6
GTVA311801FA
GTVA311801FA-V1 Application Circuit Schematic
GTVA311801FA-V1 Application Circuit
Rev. 4, October 2020
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7
GTVA311801FA
GTVA311801FA-V1 Application Circuit Bill of Materials
Rev. 4, October 2020
Designator
Description
Qty
R1
RES, 30 OHMs, +/- 1%, 0603
1
R2,
RES, 5.6 OHMS, +/- 1%, 0603
1
C1,C2, C4, C8, C9
CAP, 10pF, 0805, ATC 600F
5
C3
CAP, .7pF, 0805, ATC, 600F
1
C5
CAP, 1uF, 0603, ATC 600S
1
C6,
CAP, 10uF, 0603
4
C7
CAP, 1.6pF, 0805, ATC, 600F
1
C10
CAP, 1uF, +/- 10%, 100V,
1
C11
CAP, 3300uF
4
Baseplate 2.5” x 4”, CU, custom
1
W1
Wire, 3.25”, 18AWG
2
Q1
Transistor, GTVA311801FA
1
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8
GTVA311801FA
Pinout Diagram (top view)
D
S
Pin
Description
D
Drain
G Gate
S
Source (flange)
G
H-37265J-2_03_pd_20 16-12-01-bn
Package Outline Specifications
Package H-37265J-2
2X 6.35
[.250]
45° X .64
[.025]
D
FLANGE
10.16
[.400]
FLANGE
4X R0.63
[R.025] MAX
SPH 1.57
[.062]
2X 2.59±.51
[.102±.020]
LID
(15.34
10.16±.25 [.604])
[.400±.010]
CL
G
CL
10.16±.25
[.400±.010]
3.61±.38
[.142±.015]
H-37265J-2_02_po_05-29-2015
1.02
[.040]
10.16
[.400]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D – drain; G – gate; S – source.
5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
Rev. 4, October 2020
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9
GTVA311801FA
Product Ordering Information
Order Number
Description
Unit of Measure
GTVA311801FA-V1-R0
GaN HEMT, Tape & Reel, 50 pcs
Each
GTVA311801FA-V1-R2
GaN HEMT, Tape & Reel, 250 pcs
Each
LTN/GTVA311801FA V1
Test Board with GaN HEMT installed
IFF, 2700 - 3100 MHz
Each
Rev. 4, October 2020
Image
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10
GTVA311801FA
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/rf
Sales Contact
rfsales@cree.com
Notes & Disclaimer
Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree
in large quantities and are provided for information purposes only. Cree products are not warranted or authorized
for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where
a failure would reasonably be expected to cause severe personal injury or death. No responsibility is assumed by
Cree for any infringement of patents or other rights of third parties which may result from use of the information
contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree.
© 2019 - 2020 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc.
Rev. 4, October 2020
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