PTVA035002EV-V1-R250

PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Pulsed CW Performance • Unmatched input and output 450 MHz, VD = 50 V, IDQ = 0.5 A, 12 µsec pulse width, 10% duty cycle • High gain and efficiency • Integrated ESD protection Gain (dB) Gain 18 • Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001) 75 • Low thermal resistance 65 16 55 14 45 Efficiency 12 10 85 35 a035002 gr 1 48 50 52 54 56 58 60 Drain Efficiency (%) 22 20 PTVA035002EV Package H-36275-4 • Pb-free and RoHS-compliant • Capable of withstanding a 13:1 load mismatch at 57 dBm under pulsed conditions: 12 µsec pulse width, 10% duty cycle 25 Output Power (dBm) RF Characteristics Pulsed CW Class AB Characteristics (not subject to production test, verified by design/characterization in Wolfspeed test fixture) VDD = 50 V, IDQ = 0.5 A, POUT = 500 W, ƒ = 450 MHz, 12 µsec pulse width, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps — 18 — dB Drain Efficiency hD — 64 — % All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Rev. 06, 2018-06-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA035002EV 2 RF Characteristics Pulsed CW Characteristics (tested in Wolfspeed test fixture) VDD = 50 V, VGS = 2.9 V, IDQ = 0.0 A, POUT = 500 W, ƒ = 450 MHz, 12 µsec pulse width, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 14.75 15.5 — dB 63 66 — % Drain Efficiency hD DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1.0 µA VDS = 105 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.1 — W Operating Gate Voltage VDS = 50 V, IDQ = 600 mA VGS — 3.70 — V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Operating Voltage VDD 0 to +55 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 300 W CW) RqJC 0.20 °C/W Ordering Information Type and Version Order Code Package Description Shipping PTVA035002EV V1 R0 PTVA035002EV-V1-R0 H-36275-4, bolt-down Tape & Reel, 50pcs PTVA035002EV V1 R250 PTVA035002EV-V1-R250 H-36275-4, bolt-down Tape & Reel, 250pcs Rev. 06, 2018-06-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 3 PTVA035002EV Typical Performance (data taken in production test fixture) Power Sweep, Pulsed CW Power Sweep, Pulsed CW 12 µsec pulse width, 10% duty cycle VDD = 50 V, VG = 2.9 V, 12 µsec pulse width, 10% duty cycle, power optimized 16 60 14 50 12 10 Efficiency 48 50 52 40 450 MHz 420 MHz 390 MHz 54 56 30 58 a035002 gr 3-1 60 Gain 18 Gain (dB) 70 Gain Drain Effficiency (%) Gain (dB) 18 80 20 60 16 Efficiency 14 10 20 8 48 14 50 12 40 30 Efficiency 51 53 55 Output Power (dBm) a035002 gr 3 57 59 20 Gain (dB) 60 Rev. 06, 2018-06-12 58 a035002ev_gr3-2 60 20 1.5 A 0.5 A 20 Drain Efficiency (%) Gain (dB) 70 49 56 80 Gain 47 54 Pulsed CW Gain VDD = 50 V VDD = 40 V VDD = 30 V 45 52 VDD = 50 V, 450 MHz, 12 µsec pulse width, 10% duty cycle, series show IDQ 16 8 50 30 Output Power (dBm) VGG = 2.9 V, 450 MHz, 2 µsec pulse width, 10% duty cycle, for selected VDD 10 40 450 MHz 420 MHz 390 MHz Pulsed CW Performance 18 50 12 Output Power (dBm) 20 70 Drain Effficiency (%) 80 20 8 VDD = 50 V, VG = 2.9 V, efficiency optimized 16 IDQ = 0.02 A 12 8 a03500 gr 3-4 48 50 52 54 56 58 60 Output Power (dBm) 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA035002EV 4 Typical Performance (cont.) Pulsed CW Efficiency VD = 50 V, 450 MHz, 12 µsec pulse width, 10% duty cycle, series show IDQ 80 IDQ = 0.02 A Efficie ency (%) 70 0.5 A 60 50 40 1.5 A 30 20 48 50 52 54 56 58 a035002 gr 6 60 Output Power (dBm) Broadband Circuit Impedance Z Source Ω Frequency MHz R 390 Z Load Ω jX R jX 1.28 –0.12 1.80 –2.22 405 1.35 0.18 1.86 –1.91 420 1.43 0.48 1.92 –1.62 435 1.54 0.76 1.98 –1.35 450 1.67 1.04 2.02 –1.11 Rev. 06, 2018-06-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 5 PTVA035002EV Reference Circuit, 390 – 450 MHz TMM10, .050 (63) C105 R803 S3 C803 TMM10, .050 (63) VDD C801 C205 R804 VDD R805 S2 C108 C104 C206 R107 3 C208 C207 C204 1 2 C201 R109 R110 R112 4 R114 R113 R111 C109 S2 S1 S1 R101 R102 R104 R106 R105 R103 C107 RF_IN C102 C802 + R802 R801 R807 R806 RF_OUT C202 5 C203 C210 C212 6 V DD C103 R108 S1 C209 C211 PTVA035002_IN_03A C106 C101 PTVA035002_OUT_03A pt v a03 500 2ev _ C D_ WS_ 06 - 12 - 20 18 Reference circuit assembly diagram (not to scale)* Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF Rev. 06, 2018-06-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA035002EV 6 Reference Circuit (cont.) Reference Circuit Assembly DUT PTVA035002EV Test Fixture Part No. LTN/PTVA035002EV PCB Rogers TMM10, 1.27 mm [0.050"] thick, 2 oz. copper, εr = 9.2 Components Information Component Description Suggested Manufacturer P/N C101, C102, C104 Capacitor, 300 pF ATC ATC100B301KW200X C103, C108 Capacitor, 20 pF ATC ATC100B200KW500X C105, C106, C801, C802, C803 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K C107, C109 Capacitor, 6.2 pF ATC ATC100B6R2CT500X R101, R102, R103, R104, R105, R106, R109, R110, R111, R112, R113, R114 Resistor, 5.6 W Panasonic Electronic Components ERJ-8GEYJ5R6V R107, R108 Resistor, 1000 W Panasonic Electronic Components ERJ-8GEYJ102V R801 Resistor, 100 W Panasonic Electronic Components ERJ-8GEYJ101V R802 Resistor, 2000 W Panasonic Electronic Components ERJ-8GEYJ202V R803 Resistor, 3600 W Panasonic Electronic Components ERJ-8GEYJ362V R804 Resistor, 1300 W Panasonic Electronic Components ERJ-3GEYJ132V R805 Resistor, 1200 W Panasonic Electronic Components ERJ-3GEYJ122V R806 Resistor, 2400 W Panasonic Electronic Components ERJ-8GEYJ242V R807 Resistor, 6200 W Panasonic Electronic Components ERJ-8GEYJ622V S1 Transistor Infineon Technologies BCP56 S2 Voltage regulator Texas Instruments LM7805 S3 Potentiometer Bourns Inc. 3224W-1-202E C201, C206, C209 Capacitor, 300 pF ATC ATC100B301KW200X C202 Capacitor, 3 pF ATC ATC100B3R0CW500X C203, C204 Capacitor, 4.3 pF ATC ATC100B4R3CW500X C205, C211 Capacitor, 100 µF United Chemi-Con EMVE101ARA101MKE0S C207, C212 Capacitor, 10 µF TDK Corporation C5750X7S2A106M230KB C208, C210 Capacitor, 2.2 µF TDK Corporation C4532X7R2A225K230KA S1, S2 Inductor, 17.5 nH Coilcraft B06TGLB Input Output Rev. 06, 2018-06-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 7 PTVA035002EV Package Outline Specifications Package H-36275-4 13.72 [.540] 2X 45° X 1.19 [45° X .047] 2x 2.03 [.080] REF CL 2X R1.59 [R.062] D1 3.23±0.51 [.127±.020] D2 S 16.612±0.500 [.654±.020] 9.144 [.360] CL 10.16 [.400] G2 G1 8X R0.51+0.13 -0.51 [ R.020+.005 -.020 ] CL CL 4X 11.68 [.460] 35.56 [1.400] 2.13 [.084] SPH 4.58+0.25 -0.13 [.180 +.010 -.005 ] 31.242±0.280 [1.230±.011] 1.63 [.064] H-36275-4_po_01_10-22-2012 CL CL CL 41.15 [1.620] Diagram Notes—unless otherwise specified: Diagram Notes—unless otherwise specified: 1.1. Interpret Interpretdimensions dimensionsand andtolerances tolerancesper perASME ASMEY14.5M-1994. Y14.5M-1994. 2.2. Primary dimensions are mm. Alternate dimensions Primary dimensions are mm. Alternate dimensionsare areinches. inches. 3.3. AllAlltolerances tolerances± ±0.127 0.127[.005] [.005]unless unlessspecified specifiedotherwise. otherwise. 4.4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. Pins: D1, D2 - drain, - gate, S - source. 5.5. Lead mm [0.005 ±0.002 inch]. Leadthickness: thickness:0.127 0.127±0.051 +0.051/–0.025 [.005 +.002/–.001]. 6.6. Gold Goldplating platingthickness: thickness:1.14 1.14± ±0.38 0.38micron micron[45 [45± ±1515microinch]. microinch]. Rev. 06, 2018-06-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PTVA035002EV 8 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2010-10-07 Advance All Data Sheet reflects advance specification for product development 02 2010-12-09 Advance 1, 2 Added ESD and VSWR information and revised conditions of test, Revise conditions of test. 03 2011-04-28 Preliminary All Convert to Preliminary Data Sheet, adding performance graphs, substantiating some characterizations. 04 2012-02-24 Production All 4–9 Convert to final Data Sheet for production-released product. Add impedance data, Add reference circuit 05.1 2016-04-19 Production 1, 2 Added ESD rating, updated ordering information 05.2 2016-06-08 Production 2 Updated ordering information to include R250 05.3 2017-02-02 Production 2 Added operating voltage and updated junction temperature 06 2018-06-12 Production All Converted to Wolfspeed Data Sheet For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. Rev. 06, 2018-06-12 www.wolfspeed.com