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HIN232ECBN

HIN232ECBN

  • 厂商:

    L3HARRIS

  • 封装:

    SOIC16_150MIL

  • 描述:

    RS-232 TRANSMITTERS/RECIEVERS

  • 数据手册
  • 价格&库存
HIN232ECBN 数据手册
HIN202E thru HIN241E Semiconductor Data Sheet December 1998 +/-15kV, ESD-Protected, +5V Powered, RS-232 Transmitters/Receivers File Number 4315.3 Features • • • • The HIN202E-HIN241E family of RS-232 transmitters/receivers interface circuits meet all ElA highspeed RS-232E and V.28 specifications, and are particularly suited for those applications where ±12V is not available. A redesigned transmitter circuit improves data rate and slew rate, which makes this suitable for ISDN and high speed modems. The transmitter outputs and receiver inputs are protected to ±15kV ESD (Electrostatic Discharge). They require a single +5V power supply and feature onboard charge pump voltage converters which generate +10V and -10V supplies from the 5V supply. The HIN203E, HIN205E, HIN233E and HIN235E require no external capacitors and are ideally suited for applications where circuit board space is critical. The family of devices offers a wide variety of highspeed RS-232 transmitter/receiver combinations to accommodate various applications (see Selection Table). • • • • • • • • The HIN205E, HIN206E, HIN211E, HIN213E, HIN235E, HIN236E, and HIN241E feature a low power shutdown mode to conserve energy in battery powered applications. In addition, the HIN213E provides two active receivers in shutdown mode allowing for easy “wakeup” capability. High Speed ISDN Compatible . . . . . . . . . . . . . .230kbits/s ESD Protection for RS-232 I/O Pins to ±15kV (IEC1000) Meets All RS-232E and V.28 Specifications Requires Only 0.1µF or Greater External Capacitors (HIN203E, HIN205E, HIN233E and HIN235E Require No External Capacitors) 230kbit/s Data Rate Two Receivers Active in Shutdown Mode (HIN213E) Requires Only Single +5V Power Supply Onboard Voltage Doubler/Inverter Low Power Consumption (Typ). . . . . . . . . . . . . . . . . . 5mA Low Power Shutdown Function (Typ) . . . . . . . . . . . . . 1µA Three-State TTL/CMOS Receiver Outputs Multiple Drivers - ±10V Output Swing for +5V Input - 300Ω Power-Off Source Impedance - Output Current Limiting - TTL/CMOS Compatible - 30V/µs Maximum Slew Rate • Multiple Receivers - ±30V Input Voltage Range - 3kΩ to 7kΩ Input Impedance - 0.5V Hysteresis to Improve Noise Rejection Applications The drivers feature true TTL/CMOS input compatibility, slew rate-limited output, and 300Ω power-off source impedance. The receivers can handle up to ±30V input, and have a 3kΩ to 7kΩ input impedance. The receivers also feature hysteresis to greatly improve noise rejection. • Any System Requiring High-Speed RS-232 Communications Port - Computer - Portable, Mainframe, Laptop - Peripheral - Printers and Terminals - Instrumentation, UPS - Modems Selection Table POWER SUPPLY VOLTAGE NUMBER OF RS-232 DRIVERS NUMBER OF RS-232 RECEIVERS NUMBER OF 0.1µF EXTERNAL CAPACITORS LOW POWER SHUTDOWN/TTL THREE-STATE NUMBER OF RECEIVERS ACTIVE IN SHUTDOWN HIN202E +5V 2 2 4 Capacitors No/No 0 HIN203E +5V 2 2 None No/No 0 HIN205E +5V 5 5 None Yes/Yes 0 HIN206E +5V 4 3 4 Capacitors Yes/Yes 0 HIN207E +5V 5 3 4 Capacitors No/No 0 HIN208E +5V 4 4 4 Capacitors No/No 0 HIN211E +5V 4 5 4 Capacitors Yes/Yes 0 HIN213E +5V 4 5 4 Capacitors Yes/Yes 2 HIN232E +5V 2 2 4 Capacitors No/No 0 HIN233E +5V 2 2 None No/No 0 HIN235E +5V 5 5 None Yes/Yes 0 HIN236E +5V 4 3 4 Capacitors Yes/Yes 0 HIN237E +5V 5 3 4 Capacitors No/No 0 HIN238E +5V 4 4 4 Capacitors No/No 0 HIN241E +5V 4 5 4 Capacitors Yes/Yes 0 PART NUMBER 3-487 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1999 HIN202E thru HIN241E Ordering Information PART NO. TEMP. RANGE (oC) PACKAGE PKG. NO. PART NO. TEMP. RANGE (oC) PACKAGE PKG. NO. HIN202ECA 0 to 70 16 Ld SSOP M16.209 HIN208EIP -40 to 85 24 Ld PDIP E24.3 HIN202ECB 0 to 70 16 Ld SOIC M16.3 HIN211ECA 0 to 70 28 Ld SSOP M28.209 HIN202ECBN 0 to 70 16 Ld SOIC M16.15 HIN211ECA-T 0 to 70 Tape and Reel HIN202ECP 0 to 70 16 Ld PDIP E16.3 HIN211ECB 0 to 70 28 Ld SOIC M28.3 HIN202EIB -40 to 85 16 Ld SOIC M16.3 HIN211EIA -40 to 85 28 Ld SSOP M28.209 HIN202EIB-T -40 to 85 Tape and Reel HIN211EIB -40 to 85 28 Ld SOIC M28.3 HIN202EIBN -40 to 85 16 Ld SOIC M16.15 HIN213ECA 0 to 70 24 Ld SSOP M28.209 HIN202EIP -40 to 85 16 Ld PDIP E16.3 HIN213ECA-T 0 to 70 Tape and Reel HIN203ECB 0 to 70 20 Ld SOIC M20.3 HIN213ECB 0 to 70 28 Ld SOIC M28.3 HIN203ECP 0 to 70 20 Ld PDIP E20.3 HIN213EIA -40 to 85 28 Ld SSOP M28.209 HIN205ECP 0 to 70 24 Ld PDIP E24.6 HIN213EIB -40 to 85 28 Ld SOIC M28.3 HIN206ECA 0 to 70 24 Ld SSOP M24.209 HIN232ECA 0 to 70 16 Ld SSOP M16.209 HIN206ECB 0 to 70 24 Ld SOIC (W) M24.3 HIN232ECB 0 to 70 16 Ld SOIC M16.3 HIN206ECB-T 0 to 70 Tape and Reel HIN232ECBN 0 to 70 16 Ld SOIC (N) M16.15 HIN206ECP 0 to 70 24 Ld PDIP E24.3 HIN232ECP 0 to 70 16 Ld PDIP E16.3 HIN206EIA -40 to 85 24 Ld SSOP M24.209 HIN233ECB 0 to 70 20 Ld SOIC M20.3 HIN206EIB -40 to 85 24 Ld SOIC (W) M24.3 HIN233ECP 0 to 70 20 Ld PDIP E20.3 HIN206EIP -40 to 85 24 Ld PDIP E24.3 HIN235ECP 0 to 70 24 Ld PDIP E24.6 HIN207ECA 0 to 70 24 Ld SSOP M24.209 HIN236ECA 0 to 70 24 Ld SSOP M24.209 HIN207ECA-T 0 to 70 Tape and Reel HIN236ECB 0 to 70 24 Ld SOIC (W) M24.3 HIN207ECB 0 to 70 24 Ld SOIC HIN236ECB-T 0 to 70 Tape and Reel HIN207ECB-T 0 to 70 Tape and Reel HIN236ECP 0 to 70 24 Ld PDIP E24.3 HIN207ECP 0 to 70 24 Ld PDIP E24.3 HIN237ECA 0 to 70 24 Ld SSOP M24.209 HIN207EIA -40 to 85 24 Ld SSOP M24.209 HIN237ECA-T 0 to 70 Tape and Reel HIN207EIB -40 to 85 24 Ld SOIC (W) M24.3 HIN237ECB 0 to 70 24 Ld SOIC HIN207EIP -40 to 85 24 Ld PDIP E24.3 HIN237ECB-T 0 to 70 Tape and Reel HIN208ECA 0 to 70 24 Ld SSOP M24.209 HIN237ECP 0 to 70 24 Ld PDIP E24.3 HIN208ECA-T 0 to 70 Tape and Reel HIN238ECA 0 to 70 24 Ld SSOP M24.209 HIN208ECB 0 to 70 24 Ld SOIC HIN238ECA-T 0 to 70 Tape and Reel HIN208ECB-T 0 to 70 Tape and Reel HIN238ECB 0 to 70 24 Ld SOIC HIN208ECP 0 to 70 24 Ld PDIP E24.3 HIN238ECB-T 0 to 70 Tape and Reel HIN208EIA -40 to 85 24 Ld SSOP M24.209 HIN238ECP 0 to 70 24 Ld PDIP E24.3 HIN208EIB -40 to 85 24 Ld SOIC M24.3 HIN241ECA 0 to 70 28 Ld SSOP M28.209 HIN241ECB 0 to 70 28 Ld SOIC M28.3 HIN208EIB-T 0 to 70 Tape and Reel 3-488 M24.3 M24.3 M24.3 M24.3 HIN202E thru HIN241E Pinouts HIN202E (PDIP, SOIC) TOP VIEW C1+ 1 V+ 2 HIN203E (PDIP, SOIC) TOP VIEW 16 VCC T2IN 1 20 R2OUT 15 GND T1IN 2 19 R2IN R1OUT 3 18 T2OUT C1- 3 14 T1OUT C2+ 4 13 R1IN 12 R1OUT C2- 5 6 11 T1IN T2OUT 7 10 T2IN V- 9 R2OUT R2IN 8 R1IN 4 17 V- T1OUT 5 16 C2- GND 6 15 C2+ VCC 7 14 V+ (C1-) (V+) C1+ 8 13 C1- (C1+) GND 9 12 V- (C2+) (V-) C2- 10 11 C2+ (C2-) NOTE: Pin numbers in parentheses are for SOIC Package. +5V +5V + 16 1 0.1µF + 3 4 0.1µF T1IN T2IN + 5 C1+ C1C2+ C2- 7 VCC +5V TO 10V VOLTAGE INVERTER V+ 2 VCC 0.1µF +5V T1IN 2 400kΩ +5V +10V TO -10V VOLTAGE INVERTER 1 V- 6 + T1 11 +5V 400kΩ +5V 400kΩ T2 10 14 7 12 0.1µF 8 5kΩ R2 15 3-489 T2 18 T2OUT R2OUT T2OUT R2IN R1IN 5kΩ R2IN 8 (13) NO 13 (14) CONNECT INTERNAL -10V SUPPLY INTERNAL +10V SUPPLY 19 20 12 (10) 17 14 (8) 5kΩ C1+ C1- 11 (12) 15 16 V- C2- VV+ C2+ C2+ C2GND 6 GND T1OUT 4 T1OUT 5kΩ 9 5 3 R1IN R1 400kΩ T2IN T1 R1OUT 13 R1OUT R2OUT + 0.1µF GND 9 10 (11) HIN202E thru HIN241E Pinouts (Continued) HIN205E (PDIP) TOP VIEW HIN206E (PDIP, SOIC, SSOP) TOP VIEW T4OUT 1 24 R3IN T3OUT 1 24 T4OUT T3OUT 2 23 R3OUT T1OUT 2 23 R2IN T1OUT 3 22 T5IN T2OUT 3 22 R2OUT T2OUT 4 21 SD R1IN 4 21 SD R2IN 5 20 EN R1OUT 5 20 EN 19 T5OUT T2IN 6 19 T4IN T2IN 7 18 R4IN T1IN 7 18 T3IN T1IN 8 17 R4OUT GND 8 17 R3OUT R1OUT 9 16 T4IN VCC 9 16 R3IN C1+ 10 R2OUT 6 R1IN 10 15 T3IN GND 11 14 R5OUT VCC 12 13 R5IN 14 C2- C1- 12 13 C2+ +5V +5V 12 VCC +5V T1IN T2IN T3IN T4IN T5IN R1OUT 400kΩ 7 +5V 400kΩ T2 15 +5V 400kΩ T3 16 22 +5V 400kΩ + T1 8 +5V 400kΩ 3 4 2 9 0.1µF 0.1µF T1OUT 0.1µF T2OUT T3OUT T1IN 10 C1+ + 12 C113 C2+ + 14 C2- 1 T4OUT T2IN 10 9 T5OUT T4IN 5 R2IN 5kΩ R2 23 5kΩ 17 18 R4IN 5kΩ R4 +5V 400kΩ T2 18 +5V 400kΩ T3 +5V 400kΩ T4 19 2 3 1 24 R5IN 5kΩ R5 21 EN SD GND 11 0.1µF T1OUT T2OUT T3OUT T4OUT R1IN 5kΩ 22 23 R2IN R2OUT 5kΩ 17 16 R3IN R3OUT 5kΩ R3 21 SD EN 13 0.1µF 4 R1OUT 20 14 R5OUT + + R2 R4OUT 3-490 V- 15 5 24 R3IN 20 +10V TO -10V VOLTAGE INVERTER R1 R3OUT R3 +5V TO 10V VOLTAGE DOUBLER 6 R1IN 5kΩ 6 T3IN 11 V+ T1 T5 19 VCC +5V 400kΩ 7 T4 R1 R2OUT 15 V- V+ 11 GND 8 HIN202E thru HIN241E Pinouts (Continued) HIN207E (PDIP, SOIC, SSOP) TOP VIEW T3OUT T1OUT T2OUT R1IN R1OUT T2IN T1IN GND VCC HIN208E (PDIP, SOIC, SSOP) TOP VIEW T2OUT 1 24 T3OUT T1OUT 2 23 R3IN R2IN 3 22 R3OUT R2OUT 4 21 T4IN T1IN 5 20 T4OUT R1OUT 6 19 T3IN R1IN 7 18 T2IN GND 8 17 R4OUT VCC 9 16 R4IN 24 T4OUT 1 23 R2IN 2 22 R2OUT 3 21 T5IN 4 20 T5OUT 5 19 T4IN 6 18 T3IN 7 17 R3OUT 8 16 R3IN 9 C1+ 10 15 V14 C2- V+ 11 13 C2+ C1- 12 15 V- C1+ 10 V+ 11 14 C2- C1- 12 13 C2+ +5V +5V 9 9 0.1µF 0.1µF T1IN T2IN T3IN T4IN T5IN 10 C1+ + 12 C113 C2+ + 14 C2- VCC V+ +10V TO -10V VOLTAGE INVERTER V- 15 +5V 400kΩ T1 +5V 400kΩ T2 6 +5V 400kΩ 18 T3 21 +5V 400kΩ +5V 400kΩ + 0.1µF 0.1µF + 7 19 11 +5V TO 10V VOLTAGE DOUBLER 0.1µF 2 3 1 0.1µF T1OUT T2OUT T3OUT T4 24 T4OUT T1IN T2IN T3IN T4IN VCC 11 +5V TO 10V VOLTAGE DOUBLER V+ +10V TO -10V VOLTAGE INVERTER V- 15 20 5 T1 +5V 400kΩ T2 18 19 +5V 400kΩ T3 +5V 400kΩ 21 T4 2 1 24 20 6 R1IN 22 4 R2IN 17 22 5kΩ R3 GND 23 R3IN R3OUT 5kΩ 17 R3IN 16 R4IN R4OUT 5kΩ R4 GND 8 T4OUT 5kΩ R3 16 R3OUT T3OUT R2IN 5kΩ R2 T2OUT 3 R2OUT 23 T1OUT 5kΩ R2 R2OUT 0.1µF R1IN 5kΩ R1 0.1µF 7 R1 T5OUT 4 R1OUT + + +5V 400kΩ 5 R1OUT T5 3-491 10 C1+ + 12 C113 C2+ + 14 C2- 8 HIN202E thru HIN241E Pinouts (Continued) HIN211E (SOIC, SSOP) TOP VIEW T3OUT 1 T1OUT 2 T2OUT 3 HIN213E (SOIC, SSOP) TOP VIEW 28 T4OUT T3OUT 1 28 T4OUT 27 R3IN T1OUT 2 27 R3IN 26 R3OUT T2OUT 3 26 R3OUT R2IN 4 25 SD R2IN 4 25 SD R2OUT 5 24 EN R2OUT 5 24 EN T2IN 6 T1IN 7 23 R4IN T2IN 6 23 R4IN 22 R4OUT T1IN 7 22 R4OUT R1OUT 8 21 T4IN R1OUT 8 21 T4IN R1IN 9 20 T3IN R1IN 9 20 T3IN 19 R5OUT GND 10 19 R5OUT VCC 11 18 R5IN VCC 11 18 R5IN C1+ 12 17 V- C1+ 12 17 V- GND 10 V+ 13 16 C2- V+ 13 16 C2- C1- 14 15 C2+ C1- 14 15 C2+ NOTE: R4 and R5 active in shutdown. +5V +5V 11 0.1µF 0.1µF T1IN T2IN T3IN T4IN R1OUT 12 C1+ + 14 C115 C2+ + 16 C2- VCC 13 +5V TO 10V VOLTAGE DOUBLER V+ +10V TO -10V VOLTAGE INVERTER V- 17 + 0.1µF 0.1µF + +5V 400kΩ 7 T1 +5V 400kΩ T2 6 20 +5V 400kΩ T3 21 +5V 400kΩ T4 2 3 1 28 9 8 0.1µF T1OUT T1IN T2OUT T2IN T3OUT T3IN T4OUT T4IN R1IN R1OUT 5 4 26 +5V 400kΩ T2 6 20 +5V 400kΩ T3 21 +5V 400kΩ T4 5kΩ 27 R3IN 5kΩ 23 R4IN 5kΩ 19 18 R5IN R5OUT 24 SD 5kΩ R5 25 EN GND 10 R1IN 4 R4 25 GND 9 5kΩ R2IN 5kΩ EN T4OUT R4OUT 18 R5 T3OUT 28 22 R5IN T2OUT 1 8 5kΩ R5OUT T1OUT 3 26 R4IN 0.1µF 2 R3 R4OUT 0.1µF R3OUT 23 19 + T1 5kΩ R4 V- 17 R2 R3IN R3 +10V TO -10V VOLTAGE INVERTER + R2OUT 27 22 V+ +5V 400kΩ 7 5kΩ R3OUT 13 +5V TO 10V VOLTAGE DOUBLER 5 R2IN R2 VCC R1 R2OUT 3-492 12 C1+ + 14 C115 C2+ + 16 C2- 5kΩ R1 24 11 0.1µF 10 SD HIN202E thru HIN241E Pinouts (Continued) HIN232E (PDIP, SOIC) TOP VIEW HIN233E (PDIP, SOIC) TOP VIEW C1+ 1 16 VCC T2IN 1 V+ 2 15 GND T1IN 2 19 R2IN R1OUT 3 18 T2OUT C1- 3 14 T1OUT C2+ 4 13 R1IN 12 R1OUT C2- 5 6 11 T1IN T2OUT 7 10 T2IN V- 9 R2OUT R2IN 8 20 R2OUT R1IN 4 17 V- T1OUT 5 16 C2- GND 6 15 C2+ VCC 7 14 V+ (C1-) (V+) C1+ 8 13 C1- (C1+) GND 9 12 V- (C2+) (V-) C2- 10 11 C2+ (C2-) NOTE: Pin numbers in parentheses are for SOIC Package. +5V + +5V 0.1µF 7 16 1 0.1µF + 3 4 0.1µF T1IN + 5 11 C1+ C1C2+ C2- VCC +5V TO 10V VOLTAGE INVERTER V+ 2 + T1IN T2IN 400kΩ 1 +10V TO -10V VOLTAGE INVERTER +5V 400kΩ T1 14 +5V 400kΩ 0.1µF T1OUT 8 5kΩ R2 GND 15 3-493 T2 18 T2OUT 4 R1IN T2OUT R2IN NO 13 (14) CONNECT R2IN INTERNAL -10V SUPPLY INTERNAL +10V SUPPLY 19 20 8 (13) R1IN 9 T1OUT 5kΩ 5kΩ R1 5 3 13 R1OUT T1 R1OUT T2 7 400kΩ T2IN V- 6 + 12 R2OUT 2 +5V R2OUT 10 VCC +5V 0.1µF 12 (10) 17 14 (8) 5kΩ C1+ C1- C2+ 15 16 V- C2- VV+ C2+ 11 (12) C2GND 6 GND 9 10 (11) HIN202E thru HIN241E Pinouts (Continued) HIN235E (PDIP) TOP VIEW HIN236E (PDIP, SOIC, SSOP) TOP VIEW T4OUT 1 24 R3IN T3OUT 1 24 T4OUT T3OUT 2 23 R3OUT T1OUT 2 23 R2IN T1OUT 3 22 T5IN T2OUT 3 22 R2OUT T2OUT 4 21 SD R1IN 4 21 SD R2IN 5 20 EN R1OUT 5 20 EN 19 T5OUT T2IN 6 19 T4IN T2IN 7 18 R4IN T1IN 7 18 T3IN T1IN 8 17 R4OUT GND 8 17 R3OUT R1OUT 9 16 T4IN VCC 9 16 R3IN C1+ 10 R2OUT 6 R1IN 10 15 T3IN GND 11 14 R5OUT VCC 12 13 R5IN 14 C2- C1- 12 13 C2+ +5V +5V 12 VCC +5V T1IN T2IN T3IN T4IN T5IN R1OUT + T1 8 400kΩ 7 +5V 400kΩ T2 15 +5V 400kΩ T3 16 +5V 400kΩ T4 22 +5V 400kΩ T5 3 4 2 0.1µF T1OUT T2OUT 9 0.1µF 0.1µF T3OUT T1IN 1 19 10 9 R1IN T3IN 6 T4IN R2IN 5kΩ R2 23 17 18 +5V 400kΩ T3 +5V 400kΩ 19 T4 R5IN 5kΩ R5 SD 11 3-494 24 0.1µF T1OUT T2OUT T3OUT T4OUT 4 5kΩ 22 23 R2IN 5kΩ 17 16 R3IN 5kΩ R3 21 SD EN GND 21 GND 1 0.1µF R1IN 20 13 EN 3 R3OUT R5OUT 20 +5V 400kΩ T2 6 2 R1OUT R4IN + + R2 5kΩ 14 V- 15 R2OUT 18 R4 +10V TO -10V VOLTAGE INVERTER 5 R3IN R4OUT V+ R1 5kΩ R3 11 +5V TO 10V VOLTAGE DOUBLER T1 24 R3OUT VCC +5V 400kΩ 7 T5OUT 5kΩ 5 10 C1+ + 12 C113 C2+ + 14 C2- T4OUT T2IN R1 R2OUT 15 V- V+ 11 8 HIN202E thru HIN241E Pinouts (Continued) HIN237E (PDIP, SOIC, SSOP) TOP VIEW T3OUT T1OUT T2OUT HIN238E (PDIP, SOIC, SSOP) TOP VIEW 24 T4OUT 1 23 R2IN 2 4 21 T5IN R1OUT 5 20 T5OUT T1IN GND VCC 8 9 C1+ 10 V+ 11 C1- 12 19 T3IN 18 T2IN 17 R3OUT GND 8 17 R4OUT 16 R3IN VCC 9 16 R4IN 15 V- C1+ 10 15 V- 14 C2- V+ 11 14 C2- 13 C2+ C1- 12 13 C2+ +5V 9 9 0.1µF 0.1µF T1IN T2IN T3IN T4IN T5IN VCC V+ +10V TO -10V VOLTAGE INVERTER V- 15 T1 +5V 400kΩ T2 6 18 +5V 400kΩ T3 +5V 400kΩ +5V 400kΩ + 2 3 1 0.1µF 0.1µF 0.1µF + +5V 400kΩ 21 11 +5V TO 10V VOLTAGE DOUBLER 7 19 20 T4OUT R1IN 7 +5V 10 C1+ + 12 C113 C2+ + 14 C2- 21 T4IN T1IN 5 18 T3IN 7 22 R3OUT R1OUT 6 19 T4IN 6 23 R3IN R2OUT 4 R1IN T2IN 24 T3OUT T1OUT 2 R2IN 3 22 R2OUT 3 T2OUT 1 0.1µF T1OUT T2OUT T3OUT T4 24 T4OUT T1IN T2IN T3IN T4IN VCC 11 +5V TO 10V VOLTAGE DOUBLER V+ +10V TO -10V VOLTAGE INVERTER V- 15 20 5 T1 +5V 400kΩ T2 18 19 +5V 400kΩ T3 +5V 400kΩ 21 T4 2 1 24 20 6 R1IN R1OUT 5kΩ R1 22 R2IN 5kΩ R2 17 4 5kΩ R3 GND T4OUT R2IN 22 23 R3IN R3OUT 5kΩ 17 16 R4IN R4OUT 5kΩ R4 GND 8 T3OUT 5kΩ R3 R3IN T2OUT 3 R2OUT 16 R3OUT T1OUT 5kΩ R2 R2OUT 0.1µF 7 R1 23 0.1µF R1IN T5OUT 4 + + +5V 400kΩ 5 R1OUT T5 3-495 10 C1+ + 12 C113 C2+ + 14 C2- 8 HIN202E thru HIN241E Pinouts (Continued) HIN241E (SOIC, SSOP) TOP VIEW T3OUT 1 28 T4OUT T1OUT 2 27 R3IN T2OUT 3 26 R3OUT R2IN 4 25 SD R2OUT 5 24 EN T2IN 6 23 R4IN T1IN 7 22 R4OUT R1OUT 8 21 T4IN R1IN 9 20 T3IN GND 10 19 R5OUT +5V 11 0.1µF 0.1µF T1IN T2IN T3IN 18 R5IN VCC 11 17 V- C1+ 12 T4IN 16 C2- V+ 13 15 C2+ C1- 14 R1OUT 12 C1+ + 14 C115 C2+ + 16 C2- VCC 13 +5V TO 10V VOLTAGE DOUBLER V+ +10V TO -10V VOLTAGE INVERTER V- 17 + + +5V 400kΩ 7 T1 +5V 400kΩ T2 6 20 +5V 400kΩ T3 +5V 400kΩ 21 T4 2 3 1 28 9 8 0.1µF 0.1µF T1OUT T2OUT T3OUT T4OUT R1IN 5kΩ R1 5 4 R2IN R2OUT 5kΩ R2 26 27 R3IN R3OUT 5kΩ R3 22 23 R4IN R4OUT 5kΩ R4 19 18 R5IN R5OUT 24 EN 5kΩ R5 25 SD GND 10 Pin Descriptions PIN VCC FUNCTION Power Supply Input 5V ±10%, 5V ±5% (HIN233E, HIN235E, and HIN237E). V+ Internally generated positive supply (+10V nominal). V- Internally generated negative supply (-10V nominal). GND Ground lead. Connect to 0V. C1+ External capacitor (+ terminal) is connected to this lead. C1- External capacitor (- terminal) is connected to this lead. C2+ External capacitor (+ terminal) is connected to this lead. C2- External capacitor (- terminal) is connected to this lead. TIN Transmitter Inputs. These leads accept TTL/CMOS levels. An internal 400kΩ pull-up resistor to VCC is connected to each lead. TOUT RIN ROUT EN SD, SD NC Transmitter Outputs. These are RS-232 levels (nominally ±10V). Receiver Inputs. These inputs accept RS-232 input levels. An internal 5kΩ pull-down resistor to GND is connected to each input. Receiver Outputs. These are TTL/CMOS levels. Enable input. This is an active low input which enables the receiver outputs. With EN = 5V, the outputs are placed in a high impedance state. Shutdown Input. With SD = 5V (HIN213E SD = 0V), the charge pump is disabled, the receiver outputs are in a high impedance state (except R4 and R5 of HIN241E) and the transmitters are shut off. No Connect. No connections are made to these leads. 3-496 HIN202E thru HIN241E Absolute Maximum Ratings Thermal Information VCC to Ground. . . . . . . . . . . . . . . . . . . . . . (GND -0.3V) < VCC < 6V V+ to Ground . . . . . . . . . . . . . . . . . . . . . . . .(VCC -0.3V) < V+ < 12V V- to Ground. . . . . . . . . . . . . . . . . . . . . . . . -12V < V- < (GND +0.3V) Input Voltages TIN . . . . . . . . . . . . . . . . . . . . . . . . . (V- -0.3V) < VIN < (V+ +0.3V) RIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Output Voltages TOUT . . . . . . . . . . . . . . . . . . . .(V- -0.3V) < VTXOUT < (V+ +0.3V) ROUT . . . . . . . . . . . . . . . . . (GND -0.3V) < VRXOUT < (V+ +0.3V) Short Circuit Duration TOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Continuous ROUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Continuous ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Thermal Resistance (Typical, Note 1) θJA (oC/W) 16 Ld SOIC (N) Package . . . . . . . . . . . . . . . . . . . . . 115 16 Ld SOIC (W) Package. . . . . . . . . . . . . . . . . . . . . 100 16 Ld SSOP Package . . . . . . . . . . . . . . . . . . . . . . . 155 16 Ld PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . 90 20 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . 100 24 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . 75 24 Ld SSOP Package . . . . . . . . . . . . . . . . . . . . . . . 135 24 Ld PDIP (N) Package . . . . . . . . . . . . . . . . . . . . . 75 24 Ld PDIP (W) Package . . . . . . . . . . . . . . . . . . . . . 60 28 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . 70 28 Ld SSOP Package . . . . . . . . . . . . . . . . . . . . . . . 100 Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300oC (SOIC and SSOP - Lead Tips Only) Operating Conditions Temperature Range HIN-XXXCX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 70oC HIN-XXXIX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications Test Conditions: VCC = +5V ±10%, (VCC = +5V ±5% HIN202E, HIN203E, HIN205E, HIN232E, HIN233E, HIN235E, HIN237E); C1-C4 = 0.1µF; TA = Operating Temperature Range PARAMETER TEST CONDITIONS MIN TYP MAX UNITS ±5 ±9 ±10 V HIN202E, HIN203E, HIN232E, HIN233E - 8 15 mA HIN202E - HIN208E, HIN211E, HIN213E, HIN234E - HIN238E, HIN241E - 11 20 mA HIN205E, HIN206E, HIN211E, HIN235E, HIN236E, HIN241E - 1 10 µA HIN213E - 15 50 µA - - 0.8 V Output Voltage Swing, TOUT Transmitter Outputs, 3kΩ to Ground Power Supply Current, ICC No Load, TA = 25oC Shutdown Supply Current, ICC(SD) TA = 25oC Input Logic Low, TIN, EN, VlL TIN , EN, SD, EN, SD Input Logic High, VlH TIN 2.0 - - V EN, SD, EN, SD 2.4 - - V - 15 200 µA -30 - +30 V 3.0 5.0 7.0 kΩ Logic Pullup Current, IP TIN = 0V RS-232 Input Voltage Range, VIN Receiver Input Impedance, RIN TA = 25oC, VIN = ±3V Receiver Input Low Threshold, VIN (H-L) VCC = 5V, TA = 25oC Active Mode - 1.2 - V Shutdown Mode HIN213E R4 and R5 - 1.5 - V VCC = 5V, TA = 25oC Active Mode - 1.7 2.4 V Shutdown Mode HIN213E R4 and R5 - 1.5 2.4 V 0.2 0.5 1.0 V - 0.1 0.4 V 3.5 4.6 - V Receiver Input High Threshold, VIN (L-H) Receiver Input Hysteresis, VHYST VCC = 5V, No Hysteresis in Shutdown Mode TTL/CMOS Receiver Output Voltage Low, VOL IOUT = 1.6mA (HIN202E, HIN203E, HIN232E, HIN233E IOUT = 3.2mA) TTL/CMOS Receiver Output Voltage High, VOH IOUT = -1mA 3-497 HIN202E thru HIN241E Test Conditions: VCC = +5V ±10%, (VCC = +5V ±5% HIN202E, HIN203E, HIN205E, HIN232E, HIN233E, HIN235E, HIN237E); C1-C4 = 0.1µF; TA = Operating Temperature Range (Continued) Electrical Specifications PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Output Enable Time, tEN HIN205E, HIN206E, HIN211E, HIN213E, HIN235E, HIN236E, HIN241E - 600 - ns Output Disable Time, tDIS HIN205E, HIN206E, HIN211E, HIN213E, HIN235E, HIN236E, HIN241E - 200 - ns Transmit, Receive Propagation Delay, tPD HIN213E SD = 0V, R4, R5 - 4.0 40 µs HIN213E SD = VCC , R1 - R5 - 0.5 10 µs All except HIN213E - 0.5 10 µs Transmit Transition Region Slew Rate, SRT RL = 3kΩ, CL = 1000pF Measured from +3V to -3V or -3V to +3V (Note 2) 3 20 45 V/µs Output Resistance, ROUT VCC = V+ = V- = 0V, VOUT = ±2V 300 - - Ω RS-232 Output Short Circuit Current, ISC TOUT Shorted to GND - ±10 - mA TTL/CMOS Receiver Output Leakage EN = VCC , EN = 0, 0V < ROUT < VCC - 0.5 ±10 µA ESD Performance - - - - - ESD Protection Human Body Model ±15 - - kV TIN , ROUT IEC1000-4-2 Contact Discharge ±8 - - kV IEC1000-4-2 Air Gap (Note 3) ±15 - - kV Human Body Model ±2 - - kV TIN , ROUT NOTES: 2. Guaranteed by design. 3. Meets Level 4 with the exception of HIN205E T5OUT = ±12kV. Test Circuits (HIN232E) +4.5V TO +5.5V INPUT - 0.1µF C3 0.1µF C1 + + - 0.1µF + C2 - - + 0.1µF C4 3kΩ 1 C1+ VCC 16 2 V+ GND 15 T1OUT 14 4 C2+ R1IN 13 RS-232 ±30V INPUT 5 C2- R1OUT 12 TTL/CMOS OUTPUT T1 OUTPUT 6 V- T1IN 11 TTL/CMOS INPUT 7 T2OUT T2IN 10 TTL/CMOS INPUT R2OUT 9 VCC 16 2 V+ GND 15 3 C1- T1OUT 14 4 C2+ R1IN 13 5 C2- R1OUT 12 3kΩ 3 C1- 8 R2IN 1 C1+ TTL/CMOS OUTPUT T2 OUTPUT 6 V7 T2OUT 8 R2IN ROUT = VIN /I T1IN 11 T2IN 10 R2OUT 9 T2OUT T1OUT VIN = ±2V A RS-232 ±30V INPUT FIGURE 1. GENERAL TEST CIRCUIT 3-498 FIGURE 2. POWER-OFF SOURCE RESISTANCE CONFIGURATION HIN202E thru HIN241E VOLTAGE DOUBLER S1 VOLTAGE INVERTER S2 C1+ V+ = 2VCC S5 C2+ S6 VCC GND + GND S3 C1- + C1 - + C3 VCC S4 + C2 - C4 GND C2- S7 V- = - (V+) S8 RC OSCILLATOR FIGURE 3. CHARGE PUMP Detailed Description The HIN202E thru HIN241E family of high-speed RS-232 transmitters/receivers are powered by a single +5V power supply, feature low power consumption, and meet all ElA RS232C and V.28 specifications. The circuit is divided into three sections: the charge pump, transmitter, and receiver. Charge Pump An equivalent circuit of the charge pump is illustrated in Figure 3. The charge pump contains two sections: the voltage doubler and the voltage inverter. Each section is driven by a two phase, internally generated clock to generate +10V and -10V. The nominal clock frequency is 125kHz. During phase one of the clock, capacitor C1 is charged to VCC . During phase two, the voltage on C1 is added to VCC , producing a signal across C3 equal to twice VCC . During phase two, C2 is also charged to 2VCC , and then during phase one, it is inverted with respect to ground to produce a signal across C4 equal to -2VCC . The charge pump accepts input voltages up to 5.5V. The output impedance of the voltage doubler section (V+) is approximately 200Ω, and the output impedance of the voltage inverter section (V-) is approximately 450Ω. A typical application uses 0.1µF capacitors for C1-C4, however, the value is not critical. Increasing the values of C1 and C2 will lower the output impedance of the voltage doubler and inverter, increasing the values of the reservoir capacitors, C3 and C4, lowers the ripple on the V+ and V- supplies. During shutdown mode (HIN202E, HIN203E, HIN205E, HIN206E, HIN211E, HIN213E, HIN232E, HIN233E, HIN235E, HIN236E and HIN241E, the charge pump is turned off, V+ is pulled down to VCC , V- is pulled up to GND, and the supply current is reduced to less than 10µA. The transmitter outputs are disabled and the receiver outputs (except for HIN213E, R4 and R5) are placed in the high impedance state. 1 at the input results in a voltage of between -5V and V- at the output, and a logic 0 results in a voltage between +5V and (V+ -0.6V). Each transmitter input has an internal 400kW pullup resistor so any unused input can be left unconnected and its output remains in its low state. The output voltage swing meets the RS-232C specifications of ±5V minimum with the worst case conditions of: all transmitters driving 3kΩ minimum load impedance, VCC = 4.5V, and maximum allowable operating temperature. The transmitters have an internally limited output slew rate which is less than 30V/µs. The outputs are short circuit protected and can be shorted to ground indefinitely. The powered down output impedance is a minimum of 300Ω with ± 2V applied to the outputs and VCC = 0V. Receivers The receiver inputs accept up to ±30V while presenting the required 3kΩ to 7kΩ input impedance even if the power is off (VCC = 0V). The receivers have a typical input threshold of 1.3V which is within the ±3V limits, known as the transition region, of the RS-232 specifications. The receiver output is 0V to VCC . The output will be low whenever the input is greater than 2.4V and high whenever the input is floating or driven between +0.8V and -30V. The receivers feature 0.5V hysteresis (except during shutdown) to improve noise rejection. The receiver Enable line EN, (EN on HIN213E) when unasserted, disables the receiver outputs, placing them in the high impedance mode. The receiver outputs are also placed in the high impedance state when in shutdown mode (except HIN213E R4 and R5). V+ VCC 400kΩ 300Ω TXIN TOUT GND < TXIN < VCC V- < VTOUT < V+ V- Transmitters The transmitters are TTL/CMOS compatible inverters which translate the inputs to RS-232 outputs. The input logic threshold is about 26% of VCC , or 1.3V for VCC = 5V. A logic 3-499 FIGURE 4. TRANSMITTER HIN202E thru HIN241E Application Information VCC RXIN -30V < RXIN < +30V ROUT GND < VROUT < VCC 5kΩ GND FIGURE 5. RECEIVER A simple duplex RS-232 port with CTS/RTS handshaking is illustrated in Figure 7. Fixed output signals such as DTR (data terminal ready) and DSRS (data signaling rate select) is generated by driving them through a 5kΩ resistor connected to V+. TIN OR RIN TOUT OR ROUT The HIN2XXA may be used for all RS-232 data terminal and communication links. It is particularly useful in applications where ±12V power supplies are not available for conventional RS-232 interface circuits. The applications presented represent typical interface configurations. VOL VOL tPHL tPLH AVERAGE PROPAGATION DELAY = tPHL + tPLH 2 In applications requiring four RS-232 inputs and outputs (Figure 8), note that each circuit requires two charge pump capacitors (C1 and C2) but can share common reservoir capacitors (C3 and C4). The benefit of sharing common reservoir capacitors is the elimination of two capacitors and the reduction of the charge pump source impedance which effectively increases the output swing of the transmitters. FIGURE 6. PROPAGATION DELAY DEFINITION +5V HIN213E Operation in Shutdown The HIN213E features two receivers, R4 and R5, which remain active in shutdown mode. During normal operation the receivers propagation delay is typically 0.5µs. This propagation delay may increase slightly during shutdown. When entering shut down mode, receivers R4 and R5 are not valid for 80µs after SD = VIL. When exiting shutdown mode, all receiver outputs will be invalid until the charge pump circuitry reaches normal operating voltage. This is typically less than 2ms when using 0.1µF capacitors. 1 C1 + 0.1µF - + 16 3 HIN232E 6 4 C2 + 0.1µF TD INPUTS OUTPUTS TTL/CMOS RTS 5 T1 11 14 T2 10 12 7 13 RD CTS 9 + R2 R1 15 8 CTR (20) DATA TERMINAL READY DSRS (24) DATA SIGNALING RATE SELECT RS-232 INPUTS AND OUTPUTS TD (2) TRANSMIT DATA RTS (4) REQUEST TO SEND RD (3) RECEIVE DATA CTS (5) CLEAR TO SEND SIGNAL GROUND (7) FIGURE 7. SIMPLE DUPLEX RS-232 PORT WITH CTS/RTS HANDSHAKING 3-500 HIN202E thru HIN241E 1 C1 + 0.1µF TD INPUTS OUTPUTS TTL/CMOS RTS 4 HIN232E 3 T1 11 - 14 T2 10 + C2 0.1µF 5 12 TD (2) TRANSMIT DATA 7 RTS (4) REQUEST TO SEND 13 RD (3) RECEIVE DATA RD R2 9 CTS R1 8 CTS (5) CLEAR TO SEND 15 VCC 16 - 2 C3 + + C4 6 V- V+ 0.2µF 6 +5V - RS-232 INPUTS AND OUTPUTS 0.2µF 2 VCC 16 HIN232E C1 + 0.1µF DTR INPUTS OUTPUTS TTL/CMOS DSRS 1 4 3 5 T1 11 14 T2 10 12 7 13 DCD R1 R2 9 R1 15 8 + C2 0.1µF - DTR (20) DATA TERMINAL READY DSRS (24) DATA SIGNALING RATE SELECT DCD (8) DATA CARRIER DETECT R1 (22) RING INDICATOR SIGNAL GROUND (7) FIGURE 8. COMBINING TWO HIN232Es FOR 4 PAIRS OF RS-232 INPUTS AND OUTPUTS Typical Performance Curves 12 12 SUPPLY VOLTAGE (|V|) V- SUPPLY VOLTAGE (V) 0.1µF 10 8 6 4 V+ (VCC = 5V) 8 6 V+ (VCC = 4V) V- (VCC = 4V) 4 TA = 25oC 2 2 0 3.0 10 3.5 4.0 4.5 5.0 5.5 VCC FIGURE 9. V- SUPPLY VOLTAGE vs VCC 3-501 6.0 V- (VCC = 5V) TRANSMITTER OUTPUTS OPEN CIRCUIT 0 0 5 10 15 20 |ILOAD| (mA) 25 30 FIGURE 10. V+, V- OUTPUT VOLTAGE vs LOAD 35 HIN202E thru HIN241E Die Characteristics DIE DIMENSIONS: PASSIVATION: 128 mils x 77 mils Type: Nitride over Silox Nitride Thickness: 8kÅ Silox Thickness: 7kÅ METALLIZATION: Type: Al Thickness: 10kÅ ±1kÅ TRANSISTOR COUNT: 185 SUBSTRATE POTENTIAL PROCESS: GND CMOS Metal Gate Metallization Mask Layout HIN232E VPIN 6 C2PIN 5 C2+ PIN 4 C1PIN 3 PIN 2 V+ PIN 1 C1+ T2OUT PIN 7 R2IN PIN 8 T3OUT PIN 9 PIN 17 VCC R2OUT PIN 10 PIN 11 T2IN PIN 12 T1IN 3-502 PIN 13 R1OUT PIN 14 R1IN PIN 15 T1OUT PIN 16 GND
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