CGHV14800F

CGHV14800 800 W, 960 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Description Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800 ideal for 960 - 1400 MHz pulsed L-Band radar amplifier applications, such as air traffic control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking radars and long range survelliance radars. The GaN HEMT typically operates at 50 V, typically delivering > 65% drain efficiency. The package options are ceramic/metal flange package. Package Type: 440117 PN: CGHV14800F Typical Performance Over 1.2 - 1.4 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Units Output Power 1000 940 940 920 910 W Gain 15.5 15.2 15.2 15.1 15.1 dB Drain Efficiency 74 73 73 69 67 % Note: Measured in the CGHV14800F-AMP amplifier circuit, under 100 µsecs pulse width, 5% duty cycle, Pin = 44.5 dBm. Features • • • Reference design amplifier 1.2 - 1.4 GHz Operation 910 W Typical Output Power 14 dB Power Gain • • • 70% Typical Drain Efficiency