CGHV60040D-GP4

CGHV60040D 40 W, 6.0 GHz, GaN HEMT Die Description Cree’s CGHV60040D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors. PN: CGHV60040D Features Applications • • • • • • • • • 18 dB Typical Small Signal Gain at 4 GHz 17 dB Typical Small Signal Gain at 6 GHz 65% Typical Power Added Efficiency 40 W Typical PSAT 50 V Operation High Breakdown Voltage Up to 6 GHz Operation Cellular Infrastructure Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, LTE, EDGE, CDMA waveforms Packaging Information • • Bare die are shipped in Gel-Pak® containers Non-adhesive tacky membrane immobilizes die during shipment Large Signal Models Available for ADS and MWO Rev 1.2 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV60040D 2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain source Voltage VDSS 150 VDC 25˚C Gate source Voltage VGS -10, +2 VDC 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Drain Current IMAX 3.2 A 25˚C IGMAX 5.2 mA 25˚C Thermal Resistance, Junction to Case (packaged) RθJC 5.10 ˚C/W 85˚C, 20.8W Dissipation Thermal Resistance, Junction to Case (die only) RθJC 3.27 ˚C/W 85˚C, 20.8W Dissipation Mounting Temperature TS 320 ˚C 30 seconds 1 Maximum Forward Gate Current 2 Notes: 1 Current limit for long term, reliable operation 2 Eutectic die attach using 80/20 AuSn mounted to a 10 mil thick Cu15Mo85 carrier Electrical Characteristics (Frequency = 6 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Pinch-Off Voltage VP -3.8 -3.0 -2.3 V VDS = 10 V, ID = 5.2 mA Drain Current1 IDSS 4.2 5.2 – A VDS = 6 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBD 125 – – V VGS = -8 V, ID = 5.2 mA On Resistance RON – 0.56 – Ω VDS = 0.1 V Gate Forward Voltage VG-ON – 1.9 – V IGS = 5.2 mA GSS – 17 – dB VDD = 50 V, IDQ = 65 mA Saturated Power Output PSAT – 40 – W VDD = 50 V, IDQ = 65 mA Drain Efficiency4 η – 65 – % VDD = 50 V, IDQ = 65 mA,= PSAT = 40 W Intermodulation Distortion IM3 – -30 – dBc VDD = 50 V, IDQ = 65 mA, POUT = 40 W PEP Output Mismatch Stress VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 50 V, IDQ = 65 mA, P = 40 W CW Input Capacitance CGS – 7.1 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 1.6 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.15 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz DC Characteristics RF Characteristics Small Signal Gain 2,3 OUT Dynamic Characteristics Notes: 1 Scaled from PCM data 2 PSAT is defined as IG = 0.52 mA 3 Pulsed 100 μsec, 10% 4 Drain Efficiency = POUT / PDC Rev 1.2 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV60040D 3 DIE Dimensions (units in microns) Overall die size 820 x 1800 (+0/- 50) microns, die thickness 100 microns. All Gate and Drain pads must be wire bonded for electrical connection. Pad Size (microns) Drain 464 x 156 Gate 464 x 156 Interconnect 156 x 152 Assembly Notes: • Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at http://www.cree.com/products/wireless_documents.asp • • • • • • Vacuum collet is the preferred method of pick-up The backside of the die is the Source (ground) contact Die back side gold plating is 5 microns thick minimum Thermosonic ball or wedge bonding are the preferred connection methods Gold wire must be used for connections Use the die label (XX-YY) for correct orientation Rev 1.2 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV60040D 4 Typical Performance Figure 1. CGHV60040D Output Power, Gain and Efficiency vs. Input Power at Tcase = 25°C VDD = 50 V, IDQ = 65 mA, Frequency = 2.7 GHz Gain (dB) Power (dBm) and Eff (%) CW Transfer Power (dBm) Figure 2. CGHV60040D GMAX and K Factor vs. Frequency at Tcase = 25°C VDD = 50 V, IDQ = 65 mA K-Factor Gmax (dB) Gmax & K-Factor Frequency (GHz) Rev 1.2 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV60040D 5 Typical Die S-Parameters (Small Signal, VDS = 50 V, IDQ = 65 mA, magnitude / angle) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 0.500 0.935 -124.81 17.697 105.17 0.018 16.26 0.468 -61.04 0.600 0.932 -132.78 15.111 99.07 0.019 10.39 0.461 -66.42 0.700 0.930 -138.77 13.108 93.98 0.019 5.52 0.462 -71.19 0.800 0.929 -143.42 11.520 89.59 0.019 1.35 0.468 -75.54 0.900 0.929 -147.12 10.235 85.69 0.019 -2.32 0.478 -79.56 1.000 0.929 -150.12 9.175 82.18 0.019 -5.62 0.491 -83.30 1.100 0.930 -152.61 8.287 78.96 0.018 -8.62 0.506 -86.79 1.200 0.931 -154.70 7.532 75.98 0.018 -11.38 0.521 -90.07 1.300 0.932 -156.49 6.884 73.19 0.018 -13.94 0.537 -93.16 1.400 0.933 -158.04 6.320 70.57 0.018 -16.34 0.553 -96.07 1.500 0.934 -159.39 5.827 68.10 0.018 -18.59 0.570 -98.82 1.600 0.936 -160.58 5.391 65.75 0.017 -20.72 0.586 -101.42 1.700 0.937 -161.64 5.003 63.51 0.017 -22.73 0.602 -103.88 1.800 0.939 -162.59 4.657 61.38 0.017 -24.64 0.617 -106.22 1.900 0.940 -163.45 4.346 59.35 0.016 -26.45 0.633 -108.45 2.000 0.941 -164.24 4.065 57.40 0.016 -28.18 0.647 -110.56 2.100 0.943 -164.95 3.810 55.53 0.016 -29.82 0.661 -112.57 2.200 0.944 -165.61 3.579 53.73 0.016 -31.39 0.675 -114.49 2.300 0.946 -166.22 3.367 52.01 0.015 -32.89 0.688 -116.32 2.400 0.947 -166.79 3.174 50.35 0.015 -34.32 0.701 -118.07 2.500 0.948 -167.32 2.996 48.75 0.015 -35.70 0.713 -119.74 2.600 0.950 -167.82 2.833 47.21 0.014 -37.01 0.724 -121.34 2.700 0.951 -168.29 2.682 45.73 0.014 -38.26 0.735 -122.87 2.800 0.952 -168.73 2.542 44.29 0.014 -39.47 0.745 -124.33 2.900 0.953 -169.14 2.413 42.91 0.014 -40.62 0.755 -125.74 3.000 0.954 -169.54 2.294 41.57 0.013 -41.73 0.765 -127.08 3.200 0.957 -170.27 2.079 39.03 0.013 -43.81 0.782 -129.62 3.400 0.959 -170.94 1.892 36.65 0.012 -45.72 0.798 -131.95 3.600 0.960 -171.55 1.729 34.42 0.012 -47.49 0.812 -134.12 3.800 0.962 -172.11 1.585 32.31 0.011 -49.12 0.825 -136.13 4.000 0.964 -172.64 1.458 30.33 0.011 -50.63 0.837 -137.99 4.200 0.965 -173.13 1.346 28.45 0.010 -52.03 0.848 -139.73 4.400 0.966 -173.59 1.246 26.67 0.010 -53.32 0.857 -141.35 4.600 0.967 -174.02 1.156 24.99 0.009 -54.51 0.866 -142.87 4.800 0.969 -174.43 1.076 23.38 0.009 -55.62 0.874 -144.29 5.000 0.970 -174.82 1.004 21.85 0.009 -56.64 0.882 -145.63 5.200 0.970 -175.19 0.939 20.39 0.008 -57.59 0.888 -146.88 5.400 0.971 -175.54 0.880 19.00 0.008 -58.46 0.894 -148.07 5.600 0.972 -175.88 0.826 17.66 0.008 -59.27 0.900 -149.18 5.800 0.973 -176.20 0.777 16.37 0.007 -60.01 0.905 -150.24 6.000 0.973 -176.51 0.732 15.14 0.007 -60.69 0.910 -151.24 To download the s-parameters in s2p format, go to the CGHV60040D Product Page and click on the documentation tab. Rev 1.2 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV60040D 6 Part Number System CGHV60040D Die Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Table 1. Parameter Value Units Upper Frequency1 6.0 GHz Power Output 40 W Package Bare Die - Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Table 2. Rev 1.2 – April 2020 Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV60040D 7 Product Ordering Information Order Number Description Unit of Measure CGHV60040D GaN HEMT Each Rev 1.2 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV60040D 8 For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@cree.com Notes Disclaimer Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. Cree products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. No responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree. © 2014-2020 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev 1.2 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com