CGHV27100
100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE
Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
is designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV27100 ideal for 2.5 - 2.7 GHz LTE, 4G Telecom and BWA
amplifier applications. The transistor is input matched and supplied in a ceramic/
metal pill and flange packages.
Package Type
: 440162 and
440161
PN: CGHV271
00F and CGH
V27100P
Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Units
Gain @ 44 dBm
18.1
18.0
17.9
dB
ACLR @ 44 dBm
-37.0
-37.0
-37.0
dBc
Drain Efficiency @ 44 dBm
34.0
33.5
32.0
%
Note:
Measured in the CGHV27100-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V, IDS = 500 mA.
Features
2.5 - 2.7 GHz Operation
•
18.0 dB Gain
•
-37 dBc ACLR at 25 W PAVE
•
33 % Efficiency at 25 W PAVE
•
High Degree of DPD Correction Can be Applied
15
Rev 1.0 – May 20
•
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Drain-Source Voltage
Symbol
Rating
Units
Conditions
VDSS
125
Volts
25˚C
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
16
mA
25˚C
Maximum Drain Current1
IDMAX
6
A
25˚C
Soldering Temperature2
TS
245
˚C
τ
80
in-oz
Thermal Resistance, Junction to Case3
RθJC
2.34
˚C/W
85˚C, PDISS = 48 W
Thermal Resistance, Junction to Case
RθJC
2.95
˚C/W
85˚C, PDISS = 48 W
TC
-40, +150
˚C
Screw Torque
4
Case Operating Temperature5
Note:
Current limit for long term, reliable operation.
2
Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3
Measured for the CGHV27100P
4
Measured for the CGHV27100F
5
See also, the Power Dissipation De-rating Curve on Page 5.
1
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 50 V, ID = 500 mA
Saturated Drain Current2
IDS
12
14.4
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
150
–
–
VDC
VGS = -8 V, ID = 16 mA
DC Characteristics1
VDS = 10 V, ID = 16 mA
RF Characteristics (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted)
5
PSAT
–
135
–
W
VDD = 50 V, IDQ = 500 mA
η
–
68
–
%
VDD = 50 V, IDQ = 500 mA, POUT = PSAT
G
–
18
–
dB
VDD = 50 V, IDQ = 500 mA, POUT = 44 dBm
ACLR
–
-37
–
dBc
VDD = 50 V, IDQ = 500 mA, POUT = 44 dBm
η
–
33
–
%
VDD = 50 V, IDQ = 500 mA, POUT = 44 dBm
VSWR
–
–
10 : 1
Y
No damage at all phase angles, VDD = 50 V, IDQ =
500 mA, POUT = 100 W Pulsed
CGS
–
66
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
8.7
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.47
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Saturated Output Power3,4
Pulsed Drain Efficiency
3,4
Gain
6
WCDMA Linearity6
Drain Efficiency6
Output Mismatch Stress3
Dynamic Characteristics
Input Capacitance7
7
Notes:
Measured on wafer prior to packaging.
2
Scaled from PCM data.
3
Pulse Width = 100 µs, Duty Cycle = 10%
4
PSAT is defined as IGS = 1.6 mA peak
5
Measured in CGHV27100-AMP
6
Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V.
7
Includes package and internal matching components.
1
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGHV27100 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 1. - Small Signal Gain and Return Losses vs Frequency for the
CGHV27100 measured in CGHV27100-AMP Amplifier Circuit
VDD = 50 V, IDQ = 0.5 A
25
20
15
Magnitude (dB)
10
5
0
-5
-10
S11
-15
S21
S22
-20
2.0
2.1
2.2
2.3
2.4
2.5
2.6
Frequency (GHz)
2.7
2.8
2.9
3.0
Typical Linear Performance
Figure 2. - Typical Gain, Drain Efficiency and ACLR vs Output Power
of the CGHV27100 measured in CGHV27100-AMP Amplifier Circuit
VDS = 50 V, IDS = 0.5 A, 1c WCDMA, PAR = 7.5 dB
0
50
-10
-15
ACLR (dBc)
45
2.5GHz ACPR
2.6GHz ACPR
2.7GHz ACPR
2.5GHz Drain Efficiency
2.6GHz Drain Efficiency
2.7GHz Drain Efficiency
2.5GHz Gain
2.6GHz Gain
2.7GHz Gain
-20
40
35
30
-25
25
-30
20
-35
15
-40
10
-45
5
-50
28
30
32
34
36
38
40
Output Power (dBm)
42
44
46
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGHV27100 Rev 1.0
48
Drain Efficiency (%) & Gain (dB)
-5
0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
50
-30
45
-31
40
-32
35
-33
30
-34
25
-35
20
-36
15
-37
Gain
10
-38
Drain Efficiency
5
-39
ACLR
0
2.40
2.45
2.50
2.55
2.60
ACLR (dBc)
Gain (dB) & Drain Efficiency (%)
Figure 3. - Typical Gain, Drain Efficiency and ACLR vs Frequency
of the CGHV27100 measured in CGHV27100-AMP Amplifier Circuit.
VDS = 50 V, IDS = 0.5 A, PAVE = 25 W, 1c WCDMA, PAR = 7.5 dB
2.65
2.70
2.75
-40
2.80
Frequency (GHz)
Figure 4. - Typical Two Tone Linearity vs Output Power of the CGHV27100
measured in CGHV27100-AMP1
Amplifier
CGHV27100F
IMDCircuit.
Sweep VDS = 50 V, IDS = 0.5 A
0
Intermodulation Distortion (dBc)
-10
-20
-30
-40
-50
-IMD3
-60
+IMD3
-IMD5
+IMD5
-70
-IMD7
+IMD7
-80
20
25
30
35
Output Power (dBm)
40
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGHV27100 Rev 1.0
45
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 5. - Power Dissipation Derating Curve
50
45
440161 Package
40
440162 Package
35
Power Dissipation (W)
30
Note 1
25
20
15
10
5
0
0
25
50
75
100
125
150
Maximum Case Temperature ( C)
175
200
225
250
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
2500
4.01 - j3.88
10.69 - j2.86
2600
3.99 - j3.29
11.16 - j3.17
2700
4.01 - j2.72
11.67 - j3.94
Note1: VDD = 50 V, IDQ = 500 mA. In the 440162 package.
Note2: Impedances are extracted from CGHV27100-AMP demonstration circuit
and are not source and load pull data derived from transistor.
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGHV27100 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV27100-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1, R2
RES, 10 OHM, +/- 1%, 1/16 W, 0603
2
C1
CAP, 5.6 pF, +/- 0.25 pF, 0603, ATC
1
C2
CAP, 27 pF, +/-5%, 0603, ATC
1
C3
C8, C13
C4, C9, C14
C5, C10, C15
CAP, 10.0 pF, +/-5%, 0603, ATC
1
CAP, 8.2 pF, +/-0.25 pF, 0603, ATC
2
CAP, 470 pF, 5%, 100 V, 0603, X
3
CAP, 33000 pF, 0805, 100 V, X7R
3
C6
CAP, 10 UF, 16 V, TANTALUM
1
C7
CAP, 27 pF, +/-5%, 250 V, 0805, ATC 600 F
1
C11, C16
CAP, 1.0 UF, 100 V, 10%, X7R, 1210
2
C12
CAP, 100 UF, +/-20%, 160 V, ELECTROLYTIC
1
C17
CAP, 33 UF, 20%, ELECTROLYTIC
1
CONN, SMA
2
HEADER RT>PLZ.1CEN LK 9POS
1
PCB, RO4350, 0.020” THK, CGHV27100F
1
2-56 SOC HD SCREW 1/4 SS
4
#2 SPLIT LOCKWASHER SS
4
CGHV27100F
1
J1, J2
J3
CGHV27100-AMP Demonstration Amplifier Circuit
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A > 250 V
JEDEC JESD22 A114-D
Charge Device Model
CDM
1 < 200 V
JEDEC JESD22 C101-C
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGHV27100 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV27100-AMP Demonstration Amplifier Circuit Schematic
Vg=-2.0V to -3.5V typ
GND
Vd=+50V
9
C6
10
C5
0.033
C4
470 pF
8
6
7
5
4
C3
10 pF
3
2
1
J3
C8
8.2 pF
C9
470 pF
R2
10 Ohm
J1
R1
10 Ohm
C11
1
C12
100
C7
27 pF
J2
C2
27 pF
C1
5.6 pF
C10
0.033
2
1
3
C13
8.2 pF
C14
470 pF
C15
0.033
C16
1
C17
33
CGHV27100-AMP Demonstration Amplifier Circuit Outline
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGHV27100 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGHV27100F (Package Type — 440162)
Product Dimensions CGHV27100P (Package Type — 440161)
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGHV27100 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Part Number System
CGHV27100F
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Upper Frequency
1
Power Output
Package
Value
Units
2.7
GHz
100
W
Flange
-
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGHV27100 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGHV27100F
GaN HEMT
Each
CGHV27100P
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGHV27100-TB
CGHV27100F-AMP
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGHV27100 Rev 1.0
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGHV27100 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
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