PTFA041501E-V4-R250

PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They are available in thermally-enhanced ceramic open-cavity packages . Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz • Broadband internal matching • Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41% • Typical CW performance, 470 MHz, 28 V - Output power at P–1dB = 175 W - Efficiency = 62% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power • Pb-free and RoHS-compliant 45 -30 Efficiency –15°C 25°C 90°C -35 -40 40 35 30 -45 25 -50 -55 20 ACPR 15 -60 10 ALT -65 -70 5 -75 0 36 38 40 42 44 46 Drain Efficiency (%) Adjacent Channel Power Ratio (dB) PTFA041501F Package H-37248-2 Features Single-carrier CDMA IS-95 Performance -25 PTFA041501E Package H-36248-2 48 Average Output Power (dBm) RF Characteristics Single-carrier CDMA IS-95 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 60 W average, ƒ = 470 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 21 — dB Drain Efficiency ηD — 41 — % ACPR — –33 — dB Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 150 W PEP, ƒ = 470 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 20.0 21.0 — dB Drain Efficiency ηD 45.0 46.5 — % Intermodulation Distortion IMD — –29 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.07 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 900 mA VGS 2 2.48 3 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 150 W CW) RθJC 0.42 °C/W Ordering Information Type and Version Package Type Package Description Shipping PTFA041501E V4 H-36248-2 Thermally-enhanced slotted flange, single-ended Tray PTFA041501E V4 R250 H-36248-2 Thermally-enhanced slotted flange, single-ended Tape & Reel, 250 pcs PTFA041501F V4 H-37248-2 Thermally-enhanced earless flange, single-ended Tray PTFA041501F V4 R250 H-37248-2 Thermally-enhanced earless flange, single-ended Tape & Reel, 250 pcs *See Infineon distributor for future availability. Data Sheet 2 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Broadband Circuit Performance P OUT, Gain & Efficiency (at P-1dB) vs. Frequency VDD = 28 V, IDQ = 900 mA, POUT = 80 W -15 40 Return Loss -16 -17 30 25 -18 Gain -19 20 15 460 462 464 466 -20 470 468 20.9 60 20.7 50 45 20.4 35 20.3 30 20.2 Gain 25 20.1 20 20 15 460 462 464 466 19.9 470 468 Power Sweep at selected IDQ Power Sweep, CW Conditions VDD = 28 V, ƒ = 470 MHz VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz 21.5 21.0 20.5 IDQ = 1125 mA 20.0 19.5 Gain (dB) Gain (dB) 20.5 40 Frequency (MHz) 22.0 IDQ = 900 mA 19.0 22 80 21 70 20 60 Gain 19 18 50 40 Efficiency 17 IDQ = 675 mA 18.0 20.6 Output Power Frequency (MHz) 18.5 20.8 Efficiency 55 30 TCASE = 25°C TCASE = 90°C 16 17.5 17.0 20 15 39 41 43 45 47 49 51 53 55 Data Sheet 10 39 Output Power (dBm) Drain Efficiency (%) 35 Efficiency (%), Output Power (dBm) -14 Efficiency Input Return Loss (dB) 45 65 Gain (dB) -13 50 Gain (dB), Efficiency (%) VDD = 28 V, IDQ = 900 mA 41 43 45 47 49 51 53 55 Output Power (dBm) 3 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Typical Performance (cont.) Intermodulation Distortion vs. Output Power IM3 vs. Output Power at Selected Biases VDD = 28 V, IDQ = 900 mA, VDD = 28 V , ƒ1 = 469 MHz, ƒ 2 = 470 MHz ƒ 1 = 469 MHz, ƒ 2 = 470 MHz -20 -25 45 -27 40 IM3 35 -30 30 -40 25 IM5 -50 20 -60 IM7 -70 36 38 40 42 44 46 48 -29 IMD (dBc) Efficiency -10 50 Drain Efficiency (%) Intermodulation Distortion (dBc) 0 675 mA -31 -33 900 mA -35 -37 -39 15 -41 10 -43 1125 mA 36 50 38 Output Power (dBm), avg. 42 44 46 48 Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current IDQ = 900 mA, ƒ = 470 MHz 55 0.29 A Normalized Bias Voltage (V) 1.03 54 53 52 51 50 24 26 28 30 0.88 A 1.02 1.47 A 1.01 2.20 A 1.00 4.41 A 0.99 6.61 A 8.81 A 0.98 11.02 A 0.97 0.96 0.95 -20 32 0 20 40 60 80 100 Case Temperature (°C) Supply Voltage (V) Data Sheet 50 Output Power (dBm) Output Power (at 1 dB compression) vs. Supply Voltage Output Power (dBm) 40 4 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution RD G Broadband Circuit Impedance S T OW A Z Source Ω Frequency Z Load Ω MHz R jX R jX 450 0.88 –3.20 1.33 0.22 455 0.84 –3.20 1.35 0.31 460 0.84 –3.10 1.40 0.38 465 0.84 –3.00 1.41 0.47 470 0.83 –2.90 1.44 0.57 0.2 0.1 0.0 470 MHz 450 MHz Z Source 470 MHz 450 MHz 0.1