C6D06065A

C6D06065A VRRM Silicon Carbide Schottky Diode Z-Rec Rectifier ® 650 V IF (TC=155˚C) = 6A Qc Features • • • • • • • = = 23 nC Package New 6th Generation Technology Low Forward Voltage Drop (VF) Zero Reverse Recovery Current Zero Forward Recovery Voltage Low Leakage Current (Ir) Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF TO-220-2 Benefits • • • • PIN 1 Higher System Level Efficiency Increase System Power Density Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications • • • • • CASE PIN 2 Switch Mode Power Supplies (SMPS) Server/Telecom Power Supplies Industrial Power Supplies Solar UPS Part Number Package Marking C6D06065A TO-220-2 C6D06065 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V Continuous Forward Current 24 12 6 A TC=25˚C TC=125˚C TC=155˚C IFRM Repetitive Peak Forward Surge Current 28 17 A TC=25˚C, tP = 10 ms, Half Sine Wave TC=110˚C, tP=10 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current 51 46 A TC=25˚C, tp = 10 ms, Half Sine Wave TC=110˚C, tp = 10 ms, Half Sine Wave Fig. 8 IF,Max Non-Repetitive Peak Forward Surge Current 520 470 A TC=25˚C, tP = 10 µs, Pulse TC=110˚C, tP = 10 µs, Pulse Fig. 8 Ptot Power Dissipation 73 32 W TC=25˚C TC=110˚C Fig. 4 -55 to +175 ˚C 1 8.8 Nm lbf-in IF TJ , Tstg Operating Junction and Storage Temperature TO-220 Mounting Torque 1 Value C6D06065A, Rev. -, 04-2019 M3 Screw 6-32 Screw Fig. 3 Electrical Characteristics Symbol Parameter Typ. Max. Unit VF Forward Voltage 1.27 1.37 1.50 1.60 V IR Reverse Current 2 15 30 120 QC Total Capacitive Charge C EC Test Conditions Note IF = 6 A TJ=25°C IF = 6 A TJ=175°C Fig. 1 μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C Fig. 2 23 nC VR = 400 V, IF = 6 A TJ = 25°C Fig. 5 Total Capacitance 394 44 36 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 Capacitance Stored Energy 3.5 μJ VR = 400 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Typ. Unit Note Thermal Resistance from Junction to Case 2.05 °C/W Fig. 9 Typical Performance 20 100 18 14 IRR (RmA) 12 10 FF FF F FowardIII Current, I(A) (A) I(A) (A) (A) IF (A) 16 Reverse LeakageI Current, I(m(A) mA) IRR (uA) TJ = -55°C TJ = 25°C TJ = 75°C TJ = 125°C TJ = 175°C 8 6 4 2 0 0.5 1.0 1.5 Foward V (V) V V (V)VF (V) VVoltage, (V) F (V) 2.0 FF F Figure 1. Forward Characteristics 2 C6D06065A, Rev. -, 04-2019 2.5 80 60 TJ = 175 °C TJ = 125 °C 40 TJ = 75 °C TJ = 25 °C 20 0 TJ = -55 °C 0 100 200 300 400 500 VV (V) Reverse (V) VRRVoltage, (V) VR (V) R 600 Figure 2. Reverse Characteristics 700 800 Typical Performance 80 80 14 70 10% Duty Duty 10% 20% Duty Duty 20% 30% Duty Duty 30% 50% Duty Duty 50% 70% Duty Duty 70% DC DC 70 60 60 10 50 P (W) PTot (W) PTot (W) PP (W) (W) Tot TOT Tot Tot TOT IF(peak) (A) (A) IIIF(peak) (A) (A) IF (A) F(peak) F(peak) 50 70 12 60 40 30 20 50 408 40 306 30 204 20 10 102 10 0 0 25 50 75 100 ˚C TTTCCCCC(°C) T ˚C ˚C 125 150 150 175 175 25 Figure 3. Current Derating 12 35 150 150 175 175 Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 140 350 Capacitance (pF) (pF) (pF) CCC(pF) 20 6 15 CC C C C Capacitive Charge, QC (nC) QQ (nC) Q (nC) (nC) Q (nC) C (pF) T ˚C T ˚C TTCCCCC(°C) ˚C 125 125 160 400 4 10 120 300 100 250 80 200 150 60 100 40 52 50 20 0 100 200 300 400 500 500 (V) V (V) ReverseVVVVoltage, (V) RRR (V) RR R 600 600 700 700 Figure 5. Total Capacitance Charge vs. Reverse Voltage 3 100 100 180 450 25 8 0 75 75 Figure 4. Power Derating Conditions: TJ = 25 °C 30 10 50 50 C6D06065A, Rev. -, 04-2019 0 0 1 10 (V) VR (V) VV Reverse Voltage, R(V) RR 100 Figure 6. Capacitance vs. Reverse Voltage 1000 1,000 12 8 10 7 10 Capacitance Stored I Energy, (A) EC (mJ) 912 4 6 EC(mJ) 5 34 2 1 2 00 00 100 100 200 200 300 300 400 400 500 500 ReverseVVoltage, Voltage, (V) Reverse (V) VVRR(V) R 600 600 700 oo Junction To Case Impedance, ZZthJC Thermal Resistance (˚C/W) C/W) Thermal Resistance (˚C/W) Thermal Resistance (˚C/W) Thermal Resistance (˚C/W) thJC (( C/W) Figure 7. Capacitance Stored Energy 10 11 100E-3 1 10E-3 10E-3 100E-3 TJ_initial = 25 °C TJ_initial = 110 °C 8 FSM(A) IFSM 68 C Capacitance Capacitance Stored E (Energy, mJ) EC (mJ) Typical Performance 6100 4 2 0 10 0 10E-6 100 400 1E-3500 tp (s) ReverseTime, Voltage, tp (s)VR (V) 0.3 0.3 0.5 0.1 0.3 0.1 0.05 0.05 0.02 0.1 0.02 0.01 0.05 0.01 SinglePulse SinglePulse 0.02 0.01 SinglePulse 10E-610E-6 100E-6 100E-6 1E-3 1E-3 100E-310E-31 10E-3 Time, tpp (s) (Sec) (Sec) T (Sec) TTT (Sec) Figure 9. Transient Thermal Impedance C6D06065A, Rev. -, 04-2019 600 10E-3 700 Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) 0.5 0.5 1E-3 1E-3 10E-3 1E-6 1E-6 1E-6 4 200100E-6300 100E-3 10 100 1 Package Dimensions Package TO-220-2 POS PIN 1 PIN 2 CASE Inches Millimeters Min Max Min Max A .381 .410 9.677 10.414 6.477 B .235 .255 5.969 C .100 .120 2.540 3.048 D .223 .337 5.664 8.560 D1 .457-.490 11.60-12.45 typ D2 .277-.303 typ 7.04-7.70 typ D3 .244-.252 typ 6.22-6.4 typ E .590 .615 14.986 15.621 E1 .302 .326 7.68 8.28 E2 .227 251 5.77 6.37 F .143 .153 3.632 3.886 G 1.105 1.147 28.067 29.134 H .500 .550 12.700 13.970 L .025 .036 .635 .914 M .045 .055 1.143 1.550 N .195 .205 4.953 5.207 P .165 .185 4.191 4.699 Q .048 .054 1.219 1.372 S 3° 6° 3° 6° 6° T 3° 6° 3° U 3° 6° 3° 6° V .094 .110 2.388 2.794 W .014 .025 .356 .635 X 3° 5.5° 3° 5.5° Y .385 .410 9.779 10.414 z .130 .150 3.302 3.810 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout TO-220-2 Part Number Package Marking C6D06065A TO-220-2 C6D06065 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C6D06065A, Rev. -, 04-2019 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C6D06065A, Rev. -, 04-2019 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power