BTA45-800BQ

BTA45-800B 4Q Triac 10 July 2017 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT1292 (IITO3P) package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C). It is used in applications where "high junction operating temperature capability" is required. 2. Features and benefits • • • • • • High current TRIAC Low thermal resistance High junction operating temperature capability (Tj(max) = 150 °C) High voltage capability Planar passivated for voltage ruggedness and reliability Insulated tab rated at 2500 V rms 3. Applications • • High current / high surge applications High power / industrial controls -- e.g. heating, motors, lighting 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current Tj junction temperature 800 V full sine wave; Tmb ≤ 92 °C; Fig. 1; Fig. 2; Fig. 3 45 A full sine wave; tp = 20 ms; Tj(init) = 25 °C; Fig. 4; Fig. 5 450 A full sine wave; tp = 16.7 ms; Tj(init) = 25 °C; 495 A 150 °C BTA45-800B WeEn Semiconductors 4Q Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+ Tj = 25 °C; Fig. 7 - - 50 mA VD = 12 V; IT = 0.1 A; T2+ GTj = 25 °C; Fig. 7 - - 50 mA VD = 12 V; IT = 0.1 A; T2- GTj = 25 °C; Fig. 7 - - 50 mA VD = 12 V; IT = 0.1 A; T2- G+ Tj = 25 °C; Fig. 7 - - 70 mA Static characteristics IGT gate trigger current IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 80 mA VT on-state voltage IT = 63.6 A; Tj = 25 °C; Fig. 10 - 1.3 1.7 V VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 750 - - V/μs VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500 - - V/μs VD = 400 V; Tj = 125 °C; IT(RMS) = 20A; dVcom/dt = 20 V/μs; gate open circuit 20 - - A/ms VD = 400 V; Tj = 150 °C; IT(RMS) = 20A; dVcom/dt = 20 V/μs; gate open circuit 10 - - A/ms Dynamic characteristics dVD/dt dIcom/dt rate of rise of off-state voltage rate of change of commutating current 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 mb G n.c. gate mounting base; isolated Graphic symbol T2 sym051 1 2 T1 G 3 IITO3P (SOT1292) 6. Ordering information Table 3. Ordering information Type number Package Name BTA45-800B IITO3P Description plastic single-ended through-hole package; isolated heatsink mounted; 1 mounting hole; 3-lead TO3P Version SOT1292 7. Marking Table 4. Marking codes Type number Marking codes BTA45-800B BTA45-800B BTA45-800B Product data sheet All information provided in this document is subject to legal disclaimers. 10 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 2 / 12 BTA45-800B WeEn Semiconductors 4Q Triac 8. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current Values Unit 800 V full sine wave; Tmb ≤ 92°C; Fig. 1; Fig. 2; Fig. 3 45 A full sine wave; tp = 20 ms; Tj(init) = 25 °C; Fig. 4; Fig. 5 450 A full sine wave; tp = 16.7 ms; Tj(init) = 25 °C; 495 A 1012.5 A2s 150 A/μs I2t I2t for fusing tp = 10ms; sine wave dIT/dt rate of rise of on-state current IG = 150mA IGM peak gate current tp = 20μs 8 A PGM peak gate power tp = 20μs 40 W PG(AV) average gate power over any 20 ms period 1 W Tstg storage temperature -40 to 150 °C Tj junction temperature 150 °C bndb6-001 60 IT(RMS) (A) 50 92 °C 40 46 30 45 20 44 10 43 0 -50 0 50 100 150 Tmb (°C) Fig. 1. RMS on-state current as a function of mounting base temperature; maximum values BTA45-800B Product data sheet 42 10-2 10-1 1 10 surge duration (s) f = 50Hz; Tmb = 92 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 10 July 2017 bndb6-002 48 IT(RMS) (A) 47 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 3 / 12 BTA45-800B WeEn Semiconductors 4Q Triac Ptot (W) bndb6-003 80 conduction form angle factor (degrees) α 30 60 90 120 180 60 40 α = 180° 2.816 1.967 1.570 1.329 1.110 96 120 ° α 78 Tmb(max) (°C) 90° 60° 114 30° 20 0 132 0 10 20 30 40 α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 150 50 IT(RMS) (A) bndb6-004 500 ITSM (A) IT ITSM 400 t T Tj(init) = 25 °C max 300 200 100 0 1 102 10 103 number of cycles (n) f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values bndb6-005 104 ITSM (A) IT ITSM t T Tj(init) = 25 °C max 103 (1) 102 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms ; (1) dIT/dt limit Fig. 5. Total power dissipation as a function of RMS on-state current; maximum values BTA45-800B Product data sheet All information provided in this document is subject to legal disclaimers. 10 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 4 / 12 BTA45-800B WeEn Semiconductors 4Q Triac 9. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from junction to mounting base Rth(j-a) thermal resistance from junction to ambient free air Fig. 6 in free air Min Typ Max Unit - - 0.9 K/W - 55 - K/W bndb6-006 10 Zth(j-mb) (K/W) 1 10-1 P δ= 10-2 tp 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp T t T tp (s) 10 Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminal to external heatsink; sinusoidal waveform; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C - - 2500 V BTA45-800B Product data sheet All information provided in this document is subject to legal disclaimers. 10 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 5 / 12 BTA45-800B WeEn Semiconductors 4Q Triac 11. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 - - 50 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 - - 50 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 - - 50 mA VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 - - 70 mA VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 - - 100 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 - - 160 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 - - 100 mA VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 8 - - 100 mA Static characteristics IGT IL gate trigger current latching current IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 80 mA VT on-state voltage IT = 63.6 A; Tj = 25 °C; Fig. 10 - 1.3 1.7 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11 - 0.8 1.3 V VD = 400 V; IT = 0.1 A; Tj = 150 °C; Fig. 11 0.2 0.45 - V VD = 800 V; Tj = 25 °C - - 10 μA VD = 800 V; Tj = 150 °C - - 2.5 mA VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 750 - - V/μs VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500 - - V/μs VD = 400 V; Tj = 125 °C; IT(RMS) = 20A; dVcom/dt = 20 V/μs; gate open circuit 20 - - A/ms VD = 400 V; Tj = 150 °C; IT(RMS) = 20A; dVcom/dt = 20 V/μs; gate open circuit 10 - - A/ms ID off-state current Dynamic characteristics dVD/dt dIcom/dt rate of rise of off-state voltage rate of change of commutating current BTA45-800B Product data sheet All information provided in this document is subject to legal disclaimers. 10 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 6 / 12 BTA45-800B WeEn Semiconductors 4Q Triac bndb6-007 3 IL IGT(25°C) IL(25°C) (1) 2 bndb6-008 3 IGT (2) 2 (3) (4) 1 0 -50 1 0 50 100 Tj (°C) 0 -50 150 (1) T2- G+ (2) T2- G(3) T2+ G(4) T2+ G+ Fig. 7. Normalized gate trigger current as a function of junction temperature 50 100 Tj (°C) 150 Fig. 8. Normalized latching current as a function of junction temperature bndb6-009 3 0 IT (A) IH IH(25°C) bndb6-010 80 60 2 40 (2) (1) (3) 1 20 0 -50 0 50 100 Tj (°C) Fig. 9. Normalized holding current as a function of junction temperature BTA45-800B Product data sheet 0 150 0 1 VT (V) 2 Vo = 1.253 V; Rs = 0.0068 Ω (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 10. On-state current as a function of on-state voltage All information provided in this document is subject to legal disclaimers. 10 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 7 / 12 BTA45-800B WeEn Semiconductors 4Q Triac bndb6-011 1.6 VGT VGT(25°C) 1.2 0.8 0.4 -50 0 50 100 Tj (°C) 150 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BTA45-800B Product data sheet All information provided in this document is subject to legal disclaimers. 10 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 8 / 12 BTA45-800B WeEn Semiconductors 4Q Triac 12. Package outline BTA45-800B Product data sheet All information provided in this document is subject to legal disclaimers. 10 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 9 / 12 BTA45-800B WeEn Semiconductors 4Q Triac Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 13. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Product [short] data sheet Production This document contains the product specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. [1 ] [2] [3] Definition Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors takes no responsibility for the content in this document if provided by an information source outside of WeEn Semiconductors. In no event shall WeEn Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. BTA45-800B Product data sheet Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 10 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 10 / 12 BTA45-800B WeEn Semiconductors 4Q Triac Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BTA45-800B Product data sheet All information provided in this document is subject to legal disclaimers. 10 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 11 / 12 BTA45-800B WeEn Semiconductors 4Q Triac 14. Contents 1. General description........................................................1 2. Features and benefits....................................................1 3. Applications....................................................................1 4. Quick reference data......................................................1 5. Pinning information........................................................2 6. Ordering information......................................................2 7. Marking............................................................................2 8. Limiting values...............................................................3 9. Thermal characteristics.................................................5 10. Isolation characteristics..............................................5 11. Characteristics..............................................................6 12. Package outline............................................................9 13. Legal information.......................................................10 14. Contents......................................................................12 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 10 July 2017 BTA45-800B Product data sheet All information provided in this document is subject to legal disclaimers. 10 July 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 12 / 12