NXPSC10650
Silicon Carbide Diode
15 August 2017
Product data sheet
1. General description
Silicon Carbide Schottky diode in a SOD59A (TO-220AC) plastic package, designed for high
frequency switched-mode power supplies.
2. Features and benefits
•
•
•
•
•
•
•
•
Highly stable switching performance
High forward surge capability IFSM
Extremely fast reverse recovery time
Superior in efficiency to Silicon Diode alternatives
Reduced losses in associated MOSFET
Reduced EMI
Reduced cooling requirements
RoHS compliant
3. Applications
•
•
•
•
•
•
•
Power factor correction
Telecom/Server SMPS
UPS
PV inverter
PC Silverbox
LED/OLED TV
Motor Drives
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
Tj
junction temperature
Conditions
Min
Typ
Max
Unit
-
-
650
V
-
-
10
A
-
-
175
°C
IF = 10 A; Tj = 25 °C; Fig. 4
-
1.5
1.7
V
IF = 10 A; Tj = 150 °C; Fig. 4
-
1.8
2.1
V
IF = 10 A; dIF/dt = 500 A/µs;
VR = 400 V; Tj = 25 °C; Fig. 5
-
15
22
nC
δ = 0.5 ; Tmb ≤ 112 °C; square-wave
pulse; Fig. 1; Fig. 2
Static characteristics
VF
forward voltage
Dynamic characteristics
Qr
recovered charge
NXPSC10650
WeEn Semiconductors
Silicon Carbide Diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
Simplified outline
cathode
Graphic symbol
mb
K
A
001aaa020
2
A
anode
mb
mb
mounting base; connected to
cathode
1
2
TO-220AC (SOD59A)
6. Ordering information
Table 3. Ordering information
Type number
NXPSC10650
Package
Name
Description
Version
TO-220AC
Plastic single-ended package; heatsink mounted; 1 mounting
hole; 2-lead TO-220AC
SOD59A
7. Marking
Table 4. Marking codes
Type number
Marking code
NXPSC10650
NXPSC10650
NXPSC10650
Product data sheet
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NXPSC10650
WeEn Semiconductors
Silicon Carbide Diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VRRM
Min
Max
Unit
repetitive peak reverse
voltage
-
650
V
VRWM
crest working reverse
voltage
-
650
V
VR
reverse voltage
DC
-
650
V
IF(AV)
average forward current
δ = 0.5 ; Tmb ≤ 112 °C; square-wave
pulse; Fig. 1; Fig. 2
-
10
A
IFRM
repetitive peak forward
current
δ = 0.5 ; tp = 25 µs; Tmb ≤ 112 °C;
square-wave pulse
-
20
A
IFSM
non-repetitive peak
forward current
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse
-
50
A
tp = 10 µs; Tj(init) = 25 °C; square-wave
pulse
-
450
A
sine-wave pulse; Tj(init) = 25 °C; tp = 10 ms
-
12.5
A²s
2
Conditions
2
I t
I t for fusing
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-
175
°C
aaa-017109
40
ptot
(W)
0.5
0.1
30
aaa-017110
12
δ=1
112 °C
IF(AV)
(A)
0.2
8
20
4
10
0
0
4
8
12
IF(AV) (A)
0
-50
16
IF(AV) = IF(RMS) × √δ
Vo = 0.701 V; Rs = 0.131 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
NXPSC10650
Product data sheet
0
50
100
150
200
Tmb (°C)
Fig. 2. Forward current as a function of mounting base
temperature; maximum values
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NXPSC10650
WeEn Semiconductors
Silicon Carbide Diode
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 3
-
-
1.9
K/W
Rth(j-a)
thermal resistance
from junction to
ambient free air
in free air
-
60
-
K/W
aaa-017111
10
Zth(j-mb)
(K/W)
1
δ = 0.5
δ = 0.3
δ = 0.1
10-1
P
δ=
δ = 0.05
δ = 0.02
δ = 0.01
10-2
10-6
tp
single pulse
10-5
10-4
10-3
10-2
10-1
1
tp
T
t
T
tp (s)
10
Fig. 3. Transient thermal impedance from junction to mounting base as a function of pulse duration
NXPSC10650
Product data sheet
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NXPSC10650
WeEn Semiconductors
Silicon Carbide Diode
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF = 10 A; Tj = 25 °C; Fig. 4
-
1.5
1.7
V
IF = 10 A; Tj = 150 °C; Fig. 4
-
1.8
2.1
V
VR = 600 V; Tj = 25 °C
-
-
100
µA
VR = 600 V; Tj = 150 °C
-
-
450
µA
VR = 650 V; Tj = 25 °C
-
-
250
µA
VR = 650 V; Tj = 150 °C
-
-
800
µA
Static characteristics
VF
forward voltage
IR
reverse current
Dynamic characteristics
Qr
recovered charge
IF = 10 A; dIF/dt = 500 A/µs;
VR = 400 V; Tj = 25 °C; Fig. 5
-
15
22
nC
Cd
diode capacitance
f = 1 MHz; VR = 1 V; Tj = 25 °C
-
300
-
pF
f = 1 MHz; VR = 300 V; Tj = 25 °C
-
34
-
pF
f = 1 MHz; VR = 600 V; Tj = 25 °C
-
28
40
pF
aaa-017112
20
aaa-017140
16
IF
(A)
Qr
(nC)
16
12
12
(1)
8
(2)
8
(3)
(4)
4
4
0
0
1
2
3
VF (V)
0
4
Vo = 0.701 V; Rs = 0.131 Ω
(1) Tj = 25 °C; typical values
(2) Tj = 100 °C; typical values
(3) Tj = 150 °C; typical values
(4) Tj = 175 °C; typical values
0
50
100
150
Tj (°C)
175
Fig. 5. Recovered charge as a function of junction
temperature
Fig. 4. Forward current as a function of forward voltage;
typical values
NXPSC10650
Product data sheet
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Silicon Carbide Diode
11. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC
E
SOD59A
A
E1
A1
P
q
D1
D
V
H
Q
b1
b
L
e
C
0
5
Dimensions: (mm are the original dimensions)
Unit
mm
max
nom
min
A
A1
b
b1(1)
c
10 mm
scale
D
D1
E
4.7
1.40 0.95 1.70 0.65 15.8
6.8 10.30
4.3
1.15 0.70 1.17 0.45 15.6
6.4
9.65
e
H
5.08
(REF)
L
P
Q
q
E1
16.25 15.0 3.80
2.6
2.95
8.1
15.70 12.5 3.53
2.2
2.65
7.9
V
6.9
(REF)
Note
1. Protruded dambar are included in the dimension.
Outline
version
SOD59A
sod059a_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
15-03-24
15-03-30
TO-220AC (2-lead)
Fig. 6. Package outline TO-220AC (SOD59A)
NXPSC10650
Product data sheet
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NXPSC10650
WeEn Semiconductors
Silicon Carbide Diode
Right to make changes — WeEn Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12. Legal information
Suitability for use — WeEn Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical
or safety-critical systems or equipment, nor in applications where failure
or malfunction of an WeEn Semiconductors product can reasonably
be expected to result in personal injury, death or severe property or
environmental damage. WeEn Semiconductors and its suppliers accept no
liability for inclusion and/or use of WeEn Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. WeEn Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.ween-semi.com.
Definitions
Draft — The document is a draft version only. The content is still under
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modifications or additions. WeEn Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local WeEn
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
WeEn Semiconductors and its customer, unless WeEn Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the WeEn Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Disclaimers
Limited warranty and liability — Information in this document is believed
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give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability for
the consequences of use of such information. WeEn Semiconductors takes
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In no event shall WeEn Semiconductors be liable for any indirect, incidental,
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or replacement of any products or rework charges) whether or not such
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Notwithstanding any damages that customer might incur for any reason
whatsoever, WeEn Semiconductors’ aggregate and cumulative liability
towards customer for the products described herein shall be limited in
accordance with the Terms and conditions of commercial sale of WeEn
Semiconductors.
NXPSC10650
Product data sheet
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the WeEn Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
WeEn Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using WeEn
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). WeEn does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
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Export control — This document as well as the item(s) described herein
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Non-automotive qualified products — Unless this data sheet expressly
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qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without WeEn Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
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own risk, and (c) customer fully indemnifies WeEn Semiconductors for
any liability, damages or failed product claims resulting from customer
design and use of the product for automotive applications beyond WeEn
Semiconductors’ standard warranty and WeEn Semiconductors’ product
specifications.
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Silicon Carbide Diode
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
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Silicon Carbide Diode
13. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Package outline.......................................................... 6
12. Legal information....................................................... 7
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
For more information, please visit: http://www.ween-semi.com
For sales office addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 15 August 2017
NXPSC10650
Product data sheet
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15 August 2017
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WeEn Semiconductors Co., Ltd. 2017. All rights reserved
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