BTA308X-800F0Q

BTA308X-800F0 3Q Hi-Com Triac 24 March 2017 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package. This triac is intended for use in motor control circuits where high blocking voltage, high static and dynamic dV/dt as well as high dIcom/dt can occur. This "series F0" triac will commutate the full rated RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. 2. Features and benefits • • • • • • • • • 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt Isolated mounting base package High junction operating temperature capability (Tj(max) = 150 °C) Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only High voltage capability Optimized for highest noise immunity 3. Applications • • • • Compressor starting control circuits General purpose motor controls Reversing induction motor controls e.g. vertical axis washing machines Applications subject to high temperature (Tj(max) = 150 °C) 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current ITSM Tj Min Typ Max Unit - - 800 V - - 8 A non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 state current - - 60 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - - 65 A - - 150 °C junction temperature Static characteristics Conditions full sine wave; Th ≤ 106 °C; Fig. 1; Fig. 2; Fig. 3 BTA308X-800F0 WeEn Semiconductors 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 5 - 20 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 5 - 20 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 5 - 20 mA IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 50 mA VT on-state voltage IT = 10 A; Tj = 25 °C; Fig. 10 - 1.3 1.65 V Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit; Fig. 12 6 - - A/ms 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated Graphic symbol mb T2 sym051 T1 G 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA308X-800F0 TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A BTA308X-800F0/L03 TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A BTA308X-800F0 Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 2 / 13 BTA308X-800F0 WeEn Semiconductors 3Q Hi-Com Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current 2 Conditions 2 Min Max Unit - 800 V full sine wave; Th ≤ 106 °C; Fig. 1; Fig. 2; Fig. 3 - 8 A full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 - 60 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 65 A I t I t for fusing tp = 10 ms; SIN - 18 A²s dIT/dt rate of rise of on-state current IG = 0.2 A - 100 A/µs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C over any 20 ms period aaf075-001 10 IT(RMS) (A) 106 °C 8 16 6 12 4 8 2 4 0 -50 0 50 100 Product data sheet 0 10-2 150 Th (°C) Fig. 1. RMS on-state current as a function of heatsink temperature; maximum values BTA308X-800F0 aaf075-002 20 IT(RMS) (A) 10-1 1 10 surge duration (s) f = 50 Hz; Th = 106 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 24 March 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 3 / 13 BTA308X-800F0 WeEn Semiconductors 3Q Hi-Com Triac Ptot (W) 12 aaf075-003 conduction form angle factor (degrees) α 10 30 60 90 120 180 8 α = 180° 2.816 1.967 1.570 1.329 1.110 120° α 114 90° 60° 6 96 Th(max) (°C) 105 123 30° 4 132 2 141 0 0 2 4 6 8 150 10 IT(RMS) (A) α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values ITSM (A) aaf075-004 80 IT ITSM t 60 T Tj(init) = 25 °C max 40 20 0 1 102 10 number of cycles (n) 103 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA308X-800F0 Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 4 / 13 BTA308X-800F0 WeEn Semiconductors 3Q Hi-Com Triac aaf075-005 104 ITSM (A) IT ITSM t T Tj(init) = 25 °C max 103 102 10 10-5 (1) 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BTA308X-800F0 Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 5 / 13 BTA308X-800F0 WeEn Semiconductors 3Q Hi-Com Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink full cycle or half cycle; with heatsink compound; Fig. 6 - - 4.5 K/W full cycle or half cycle; without heatsink compound - - 6.5 K/W thermal resistance from junction to ambient free air in free air - 55 - K/W Rth(j-a) aaf075-006 10 Zth(j-h) (K/W) 1 10-1 P 10-2 t tp 10-3 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration 9. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminals to external heatsink; sinusoidal waveform; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C - - 2500 V Cisol isolation capacitance from main terminal 2 to external heatsink; f = 1 MHz; Th = 25 °C - 10 - pF BTA308X-800F0 Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 6 / 13 BTA308X-800F0 WeEn Semiconductors 3Q Hi-Com Triac 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 5 - 20 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 5 - 20 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 5 - 20 mA VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 - - 50 mA VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 - - 75 mA VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 - - 50 mA Static characteristics IGT IL gate trigger current latching current IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 50 mA VT on-state voltage IT = 10 A; Tj = 25 °C; Fig. 10 - 1.3 1.65 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11 - 0.7 1 V VD = 400 V; IT = 0.1 A; Tj = 150 °C; Fig. 11 0.2 0.45 - V VD = 800 V; Tj = 25 °C - - 10 µA VD = 800 V; Tj = 150 °C - - 0.5 mA ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit; Fig. 12 6 - - A/ms BTA308X-800F0 Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 7 / 13 BTA308X-800F0 WeEn Semiconductors 3Q Hi-Com Triac IGT aaf075-007 3 IL IGT(25°C) 2 aaf075-008 3 IL(25°C) (1) 2 (2) (3) 1 0 -50 1 0 50 100 Tj (°C) 0 -50 150 (1) T2- G(2) T2+ G(3) T2+ G+ 0 50 100 Tj (°C) 150 Fig. 8. Normalized latching current as a function of junction temperature Fig. 7. Normalized gate trigger current as a function of junction temperature aaf075-009 3 IT (A) IH IH(25°C) aaf075-010 30 25 2 20 15 (1) 1 (2) (3) 10 5 0 -50 0 50 100 Tj (°C) 0 150 0 1 2 VT (V) 3 Vo = 1.001 V; Rs = 0.0388 Ω (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 9. Normalized holding current as a function of junction temperature Fig. 10. On-state current as a function of on-state voltage BTA308X-800F0 Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 8 / 13 BTA308X-800F0 WeEn Semiconductors 3Q Hi-Com Triac aaf075-011 1.6 aaf075-012 103 dIcom/dt (A/ms) VGT VGT(25°C) dVcom/dt=20V/μs 102 1.2 typ min 0.8 0.4 -50 10 0 50 100 Tj (°C) Fig. 11. Normalized gate trigger voltage as a function of junction temperature BTA308X-800F0 Product data sheet 1 150 20 40 60 80 100 120 140 Tj (°C) 160 Fig. 12. Rate of change of commutating current as a function of junction temperature; typical and minimum values All information provided in this document is subject to legal disclaimers. 24 March 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 9 / 13 BTA308X-800F0 WeEn Semiconductors 3Q Hi-Com Triac 11. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A P A1 q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b w M c e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 (1) L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 (2) T 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are # 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 3-lead TO-220F Fig. 13. Package outline TO-220F (SOT186A) BTA308X-800F0 Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 10 / 13 BTA308X-800F0 WeEn Semiconductors 3Q Hi-Com Triac Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 12. Legal information Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 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Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. BTA308X-800F0 Product data sheet Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 24 March 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 11 / 13 BTA308X-800F0 WeEn Semiconductors 3Q Hi-Com Triac Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BTA308X-800F0 Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 12 / 13 BTA308X-800F0 WeEn Semiconductors 3Q Hi-Com Triac 13. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values............................................................. 3 8. Thermal characteristics............................................... 6 9. Isolation characteristics...............................................6 10. Characteristics............................................................ 7 11. Package outline........................................................ 10 12. Legal information..................................................... 11 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 24 March 2017 BTA308X-800F0 Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2017 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved 13 / 13