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HS3MB M4G

HS3MB M4G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    DO214AA

  • 描述:

    DIODE GEN PURP 3A DO214AA

  • 数据手册
  • 价格&库存
HS3MB M4G 数据手册
HS3AB – HS3MB 4 Taiwan Semiconductor 3A, 50V - 1000V High Efficient Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● ● ● KEY PARAMETERS Low power loss, high efficiency Low forward voltage drop Low profile package Fast switching for high efficiency Ideal for automated placement Glass passivated chip junction Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 3 A VRRM 50 - 1000 V IFSM 100 A TJ MAX 150 °C Package DO-214AA (SMB) Configuration Single die APPLICATIONS ● ● ● ● Switching mode power supply (SMPS) Adapters Monitor TV MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.093g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device HS HS HS HS HS HS HS HS 3AB 3BB 3DB 3FB 3GB 3JB 3KB 3MB HS HS HS HS HS HS HS HS 3AB 3BB 3DB 3FB 3GB 3JB 3KB 3MB UNIT Repetitive peak reverse voltage VRRM 50 100 200 300 400 600 800 1000 V Reverse voltage, total rms value VR(RMS) 35 70 140 210 280 420 560 700 V Forward current Surge peak forward current 8.3ms single half sine-wave superimposed on rated load Junction temperature IF 3 A IFSM 100 A TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: L2102 HS3AB – HS3MB 4 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJA 60 °C/W Junction-to-ambient thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) Reverse current @ rated VR (2) Junction capacitance Reverse recovery time HS3AB HS3BB HS3DB HS3FB I = 3A, TJ = 25°C HS3GB F HS3JB HS3KB HS3MB TJ = 25°C TJ = 100°C HS3AB HS3BB HS3DB HS3FB 1MHz, VR = 4.0V HS3GB HS3JB HS3KB HS3MB HS3AB HS3BB HS3DB HS3FB IF = 0.5A, IR = 1.0A, HS3GB Irr = 0.25A HS3JB HS3KB HS3MB SYMBOL VF IR TYP MAX UNIT - 1.0 V - 1.3 V - 1.7 V - 10 μA - 250 μA 80 - pF 50 - pF - 50 ns - 75 ns CJ trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING HS3xB DO-214AA (SMB) 3,000 / Tape & Reel Notes: 1. "x" defines voltage from 50V(HS3AB) to 1000V(HS3MB) 2 Version: L2102 HS3AB – HS3MB 4 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 175 150 3 CAPACITANCE (pF) 2 1 125 100 HS3AB-HS3GB 75 50 HS3JB-HS3MB 25 0 0 0 25 50 75 100 125 0.1 150 1 10 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.4 Typical Forward Characteristics 100 TJ=125°C 10 TJ=25°C 1 20 40 60 1000 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 0 100 80 100 100 10 UF1DLW 1 HS3AB-HS3DB TJ=125°C 10 TJ=25°C 0.1 (A) AVERAGE FORWARD CURRENT (A) 4 HS3GB 0.01 1 Pulse width 0.001 0.1 0.3 0.4 0.4 0.6 0.5 0.8 0.6 1 0.7 HS3JB-HS3MB 0.8 0.9 1 1.2 1.4 1.6 1.1 1.8 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 3 Version: L2102 1.2 HS3AB – HS3MB 4 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Maximum Non-Repetitive Forward Surge Current PEAK FORWARD SURGE CURRENT (A) 120 8.3ms single half sine wave 100 80 60 40 20 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: L2102 HS3AB – HS3MB 4 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AA (SMB) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: L2102 HS3AB – HS3MB 4 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: L2102
HS3MB M4G 价格&库存

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