SST08K-800SWTR

SST08K-800SW Technical Data Data Sheet N2096, Rev.- SST08K-800SW 8A TRIACs Circuit Diagram DPAK Description With high ability to withstand the shock loading of large current, SST08K-800SW triacs provide high dv/dt rate with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially recommended for use on inductive load. Maximum Ratings: Characteristics Symbol Max. Units Tstg - -40 - 150 ℃ Tj - -40 - 125 ℃ Repetitive peak off-state voltage(Tj=25℃) VDRM - 800 V Repetitive peak reverse voltage(Tj=25℃) VRRM - 800 V Non repetitive surge peak Off-state voltage VDSM - VDRM +100 V Non repetitive peak reverse voltage VRSM - VRRM +100 V 8 A 80 A 32 A2 s 50 A/μs Storage junction temperature range Operating junction temperature range RMS on-state current Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG =2×IGT) I(TRMS) ITSM I2t Condition DPAK (TC=107℃) - dI/dt Peak gate current IGM A PGM - 4 Average gate power dissipation 1 W PG(AV) - 5 W Peak gate power  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST08K-800SW Technical Data Data Sheet N2096, Rev.- Electrical Characteristics(Tj=25℃ unless otherwise specified) Symbol IGT Test Condition VD =12V RL =33Ω VGT VD =VDRM Tj =125℃ RL =3.3KΩ VGD Value Quadrant SW Unit Ⅰ-Ⅱ-Ⅲ MAX 10 mA Ⅰ-Ⅱ-Ⅲ MAX 1.5 V Ⅰ-Ⅱ-Ⅲ MIN 0.2 V 25 mA 35 mA Ⅰ-Ⅲ IL IG =1.2IGT IH IT =100mA MAX 20 mA VD=2/3VDRM Gate Open Tj =125℃ MIN 200 V/µA Max. Units dV/dt Ⅱ MAX Static Characteristics Symbol VTM IDRM IRRM Condition IT=11A tp=380μs,Tj=25℃ VD=VDRM VR=VRRM, Tj=25℃ VD=VDRM VR=VRRM, Tj=125℃ 1.5 5 1 V μA mA Value Units 2.1 ℃/W Thermal Resistances Symbol Rth(j-c) Condition Junction to case(AC) DPAK Ordering Information S ST 08 K -800 SW SMC Diode Solutions SW: IGT1-3 ≤ 10mA Triacs IT(RMS):8A 800:VDRM/VRRM ≥ 800V K: DPAK Device SST08K-800SW Package Shipping DPAK 2500pcs/ Reel  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST08K-800SW Technical Data Data Sheet N2096, Rev.- Marking Diagram Where XXXXX is YYWWL SST08K-800SW = Part name YY = Year WW = Week L = Lot Number Ratings and Characteristics Curves FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A) 12 P(w) 12 α=180° 10 9 DPAK 8 6 6 4 3 2 0 0 2 IT(RMS) (A) 4 6 8 10 FIG.3: Surge peak on-state current versus number of cycles 100 0 0 Tc (℃) 25 50 75 100 125 4 5 FIG.4: On-state characteristics (maximum values) ITSM (A) 80 ITM (A) t=20ms One cycle 80 Tj=125℃ 60 10 40 Tj=25℃ 20 0 1 Number of cycles 10 100 1000 1 0 1 2 VTM (V) 3  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST08K-800SW Technical Data Data Sheet N2096, Rev.- FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp