STK11C68-SF25

STK11C68, STK11C68-5 (SMD5962–92324) 8Kx8 SoftStore nvSRAM FEATURES DESCRIPTION • 25, 35, 45, and 55 ns Read Access & R/W Cycle Times The Simtek STK11C68 is a 64Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance • Pin compatible with Industry Standard SRAMs • Software-initiated Non-Volatile STORE The SRAM provides the fast access & cycle times, ease of use, and unlimited read & write endurance of a normal SRAM. Data transfers under software control to the non-volatile storage cells (the STORE operation). On power-up, data is automatically restored to the SRAM (the RECALL operation). RECALL operations are also available under software control. • Automatic RECALL to SRAM on Power Up • Unlimited RECALL cycles • 1 Million STORE Cycles • 100-Year Non-volatile Data Retention The Simtek nvSRAM is the first monolithic nonvolatile memory to offer unlimited writes and reads. It is the highest performance, most reliable nonvolatile memory available. • Single 5V + 10% Operation • Commercial, Industrial, and Military Temperatures • 28-pin 330 mil SOIC (RoHS-Compatible) • 28-pin CDIP and LCC packages BLOCK DIAGRAM A5 A6 A7 A8 A9 A11 A12 ROW DECODER QUANTUM TRAP 128 x 512 STORE STATIC RAM ARRAY 128 X 512 STORE/ RECALL CONTROL RECALL DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 INPUT BUFFERS SOFTWARE DETECT A0 – A12 COLUMN I/O COLUMN DEC A 0 A 1 A 2 A 3 A 4 A10 G E W This product conforms to specifications per the terms of Simtek standard warranty. The product has completed Simtek internal qualification testing and has reached production status. 1 Document Control #ML0007 Rev 2.0 June, 2008 STK11C68, STK11C68-5 (SMD5962–92324) PIN CONFIGURATIONS NC 1 28 VCC A12 2 27 A7 3 26 W NC A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 G A2 8 21 A10 A1 9 20 A0 10 19 E DQ7 DQ0 11 18 DQ6 DQ1 12 17 DQ5 DQ2 13 16 DQ4 VSS 14 15 DQ3 (TOP) (TOP) 28-Pin DIP 28-Pin LCC 28-Pin SOIC PIN DESCRIPTIONS Pin Name I/O Description A12-A0 Input Address: The 13 address inputs select one of 8,192 bytes in the nvSRAM array DQ7-DQ0 I/O Data: Bi-directional 8-bit data bus for accessing the nvSRAM E Input Chip Enable: The active low E input selects the device W Input Write Enable: The active low W enables data on the DQ pins to be written to the address location latched by the falling edge of E G Input Output Enable: The active low G input enables the data output buffers during read cycles. De-asserting G high caused the DQ pins to tri-state. VCC Power Supply Power: 5.0V, ±10% VSS Power Supply Ground Document Control #ML0007 Rev 2.0 June, 2008 2 STK11C68, STK11C68-5 (SMD5962–92324) ABSOLUTE MAXIMUM RATINGSa Voltage on Input Relative to Ground . . . . . . . . . . . . . .–0.5V to 7.0V Voltage on Input Relative to VSS . . . . . . . . . . –0.6V to (VCC + 0.5V) Voltage on DQ0-7 . . . . . . . . . . . . . . . . . . . . . . –0.5V to (VCC + 0.5V) Temperature under Bias . . . . . . . . . . . . . . . . . . . . . –55°C to 125°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W DC Output Current (1 output at a time, 1s duration) . . . . . . . . 15mA Note a: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Package Thermal Characteristics - See Website at http://www.simtek.com (VCC = 5.0V ± 10%) DC CHARACTERISTICS SYMBOL COMMERCIAL INDUSTRIAL/ MILITARY MIN MIN PARAMETER ICC1b Average VCC Current ICC2c ICC3b MAX UNITS NOTES MAX 90 75 65 N/A 90 75 65 55 mA mA mA mA tAVAV = 25ns (commercial and industrial only) tAVAV = 35ns tAVAV = 45ns tAVAV = 55ns Average VCC Current during STORE 3 3 mA All Inputs Don’t Care, VCC = max Average VCC Current at tAVAV = 200ns 5V, 25°C, Typical 10 10 mA W ≥ (V CC – 0.2V) All Others Cycling, CMOS Levels 27 23 20 N/A 28 24 21 20 mA mA mA mA tAVAV = 25ns, E ≥ VIH (commercial and industrial only) tAVAV = 35ns, E ≥ VIH tAVAV = 45ns, E ≥ VIH tAVAV = 55ns, E ≥ VIH 750 1500 μA E ≥ (V CC - 0.2V) All Others VIN ≤ 0.2V or ≥ (VCC – 0.2V) ISB1d Average VCC Current (Standby, Cycling TTL Input Levels) ISB2d VCC Standby Current (Standby, Stable CMOS Input Levels) IILK Input Leakage Current ±1 ±1 μA VCC = max VIN = VSS to VCC IOLK Off-State Output Leakage Current ±5 ±5 μA VCC = max VIN = VSS to VCC, E or G ≥ VIH VIH Input Logic “1” Voltage 2.2 VCC + .5 2.2 VCC + .5 V All Inputs VIL Input Logic “0” Voltage VSS – .5 0.8 VSS – .5 0.8 V All Inputs VOH Output Logic “1” Voltage V IOUT = – 4mA VOL Output Logic “0” Voltage 0.4 V IOUT = 8mA TA Operating Temperature 85 °C 2.4 2.4 0.4 0 70 – 40 Note b: ICC1 and ICC3 are dependent on output loading and cycle rate. The specified values are obtained with outputs unloaded. Note c: ICC is the average current required for the duration of the STORE cycle (tSTORE ) . 2 Note d: E ≥ VIH will not produce standby current levels until any nonvolatile cycle in progress has timed out. AC TEST CONDITIONS 5.0V Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 3V Input Rise and Fall Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ≤ 5ns Input and Output Timing Reference Levels . . . . . . . . . . . . . . . 1.5V Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 1 CAPACITANCEe SYMBOL (TA = 25°C, f = 1.0MHz) PARAMETER MAX UNITS OUTPUT 255 Ohms 30 pF INCLUDING SCOPE AND FIXTURE CONDITIONS CIN Input capacitance 8 pF ΔV = 0 to 3V COUT Output Capacitance 7 pF ΔV = 0 to 3V Figure 1: AC Output Loading Note e: These parameters are guaranteed but not tested. Document Control #ML0007 Rev 2.0 June, 2008 480 Ohms 3 STK11C68, STK11C68-5 (SMD5962–92324) SRAM READ CYCLES #1 & #2 (VCC = 5.0V + 10%) SYMBOLS NO. STK11C68-25 STK11C68-35 STK11C68-45 STK11C68-55 PARAMETER #1, #2 UNITS Alt. MIN MAX MIN 25 MAX MIN MAX tELQV tACS Chip Enable Access Time 2 tAVAVf, tELEHf tRC Read Cycle Time 3 tAVQVg tAA Address Access Time 25 35 45 55 ns 4 tGLQV tOE Output Enable to Data Valid 10 15 20 25 ns 5 tAXQXg tOH Output Hold after Address Change 5 5 5 5 ns 6 tELQX tLZ Address Change or Chip Enable to Output Active 5 5 5 5 ns 7 tEHQZh tHZ Address Change or Chip Disable to Output Inactive 8 tGLQX tOLZ Output Enable to Output Active 9 tGHQZh tOHZ Output Disable to Output Inactive 10 tELICCHe tPA Chip Enable to Power Active 11 tEHICCLd, e tPS Chip Disable to Power Standby 35 10 0 0 55 15 0 0 15 0 35 45 SRAM READ CYCLE #1: Address Controlledf, g 2 tAVAV ADDRESS 3 tAVQV 5 tAXQX DQ (DATA OUT) DATA VALID SRAM READ CYCLE #2: E and G Controlledf 2 tAVAV ADDRESS 1 11 tELQV tEHICCL 6 tELQX E 7 27 tEHQZ tAVEL G 9 tGHQZ 4 8 tGLQX tGLQV DQ (DATA OUT) DATA VALID 10 tELICCH ICC ACTIVE STANDBY Document Control #ML0007 Rev 2.0 June, 2008 4 ns ns 55 Note f: W must be high during SRAM READ cycles and low during SRAM WRITE cycles. Note g: I/O state assumes E, G < VIL and W > VIH; device is continuously selected. Note h: Measured ± 200mV from steady state output voltage. ns ns 25 0 ns ns 25 0 13 25 55 45 13 10 0 45 MAX 1 25 35 MIN ns STK11C68, STK11C68-5 (SMD5962–92324) SRAM WRITE CYCLES #1 & #2 (VCC = 5.0V + 10%) SYMBOLS STK11C68-25 NO. STK11C68-35 STK11C68-45 STK11C68-55 PARAMETER #1 #2 Alt. UNITS MIN MAX MIN MAX MIN MAX MIN MAX 12 tAVAV tELEH tWC Write Cycle Time 25 35 45 55 ns 13 tWLWH tWLEH tWP Write Pulse Width 20 25 30 45 ns 14 tELWH tELEH tCW Chip Enable to End of Write 20 25 30 45 ns 15 tDVWH tDVEH tDW Data Set-up to End of Write 10 12 15 30 ns 16 tWHDX tEHDX tDH Data Hold after End of Write 0 0 0 0 ns 17 tAVWH tAVEH tAW Address Set-up to End of Write 20 25 30 45 ns ns 18 tAVWL tAVEL tAS Address Set-up to Start of Write 0 0 0 0 19 tWHAX tEHAX tWR Address Hold after End of Write 0 0 0 0 20 tWLQZh, i tWZ Write Enable to Output Disable 21 tWHQX tOW Output Active after End of Write Note i: Note j: 10 13 5 5 15 5 5 If W is low when E goes low, the outputs remain in the high-impedance state. E or W must be ≥ VIH during address transitions. SRAM WRITE CYCLE #1: W Controlledj 12 tAVAV ADDRESS 19 tWHAX 14 tELWH E 17 tAVWH 18 tAVWL 13 tWLWH W 15 tDVWH DATA IN DATA VALID 20 tWLQZ DATA OUT 16 tWHDX HIGH IMPEDANCE PREVIOUS DATA 21 tWHQX SRAM WRITE CYCLE #2: E and G Controlledj 12 tAVAV ADDRESS 14 tELEH 18 tAVEL 19 tEHAX E 17 tAVEH 13 tWLEH W 15 tDVEH DATA IN DATA VALID HIGH IMPEDANCE DATA OUT Document Control #ML0007 Rev 2.0 June, 2008 16 tEHDX 5 ns 35 ns ns STK11C68, STK11C68-5 (SMD5962–92324) AutoStore™ INHIBIT/POWER-UP RECALL SYMBOLS (VCC = 5.0V + 10%) STK11C68 NO. PARAMETER Standard UNITS NOTES MIN MAX 22 tRESTORE Power-up RECALL Duration 550 μs 23 tSTORE STORE Cycle Duration 10 ms 24 VSWITCH Low Voltage Trigger Level 4.5 V 25 VRESET Low Voltage Reset Level 3.6 V 4.0 Note k: tRESTORE starts from the time VCC rises above VSWITCH. AutoStore™ INHIBIT/POWER-UP RECALL VCC 5V 24 VSWITCH 25 VRESET STORE INHIBIT POWER-UP RECALL 22 tRESTORE DQ (DATA OUT) POWER-UP RECALL BROWN OUT STORE INHIBIT BROWN OUT STORE INHIBIT BROWN OUT STORE INHIBIT NO RECALL (VCC DID NOT GO BELOW VRESET) NO RECALL (VCC DID NOT GO BELOW VRESET) RECALL WHEN VCC RETURNS ABOVE VSWITCH Document Control #ML0007 Rev 2.0 June, 2008 6 k STK11C68, STK11C68-5 (SMD5962–92324) SOFTWARE STORE/RECALL MODE SELECTION E L L Note l: W A12 - A0 (hex) MODE I/O NOTES H 0000 1555 0AAA 1FFF 10F0 0F0F Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM Nonvolatile STORE Output Data Output Data Output Data Output Data Output Data Output High Z l H 0000 1555 0AAA 1FFF 10F0 0F0E Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM Nonvolatile RECALL Output Data Output Data Output Data Output Data Output Data Output High Z l The six consecutive addresses must be in the order listed. W must be high during all six consecutive E controlled cycles to enable a nonvolatile cycle. (VCC = 5.0V ± 10%) SOFTWARE STORE/RECALL CYCLEm, n NO. SYMBOLS STK11C68-25 STK11C68-35 STK11C68-45 STK11C68-55 MIN MIN MIN MIN PARAMETER UNITS MAX MAX MAX MAX 26 tAVAV STORE/RECALL Initiation Cycle Time 25 35 45 55 ns 27 tAVELm Address Set-up Time 0 0 0 0 ns 28 tELEHm Clock Pulse Width 20 25 30 35 ns 29 tELAXm Address Hold Time 20 30 tRECALLm RECALL Duration 20 20 20 20 20 20 ns 20 μs Note m: The software sequence is clocked on the falling edge of E controlled READs without involving G (double clocking will abort the sequence). See application note: MA0002 http://www.simtek.com/attachments/AppNote02.pdf Note n: The six consecutive addresses must be in the order listed in the Software STORE/RECALL Mode Selection Table: (0000, 1555, 0AAA, 1FFF, 10F0, 0F0F) for a STORE cycle or (0000, 1555, 0AAA, 1FFF, 10F0, 0F0E) for a RECALL cycle. W must be high during all six consecutive cycles. SOFTWARE STORE/RECALL CYCLE: E Controlledn 26 26 tAVAV ADDRESS tAVAV ADDRESS #1 27 tAVEL ADDRESS #6 28 tELEH E 29 tELAX 23 tSTORE DQ (DATA DATA VALID DATA VALID Document Control #ML0007 Rev 2.0 June, 2008 7 30 / tRECALL HIGH IMPEDANCE STK11C68, STK11C68-5 (SMD5962–92324) DEVICE OPERATION The STK11C68 is a versatile memory chip that provides several modes of operation. The STK11C68 can operate as a standard 8K x 8 SRAM. It has an 8K x 8 Nonvolatile Elements shadow to which the SRAM information can be copied or from which the SRAM can be updated in nonvolatile mode. NOISE CONSIDERATIONS Note that the STK11C68 is a high-speed memory and so must have a high-frequency bypass capacitor of approximately 0.1μF connected between Vcc and Vss, using leads and traces that are as short as possible. As with all high-speed CMOS ICs, normal careful routing of power, ground and signals will help prevent noise problems. SRAM READ The STK11C68 performs a READ cycle whenever E and G are low and W is high. The address specified on pins A0-12 determines which of the 8,192 data bytes will be accessed. When the READ is initiated by an address transition, the outputs will be valid after a delay of tAVQV (READ cycle #1). If the READ is initiated by E or G, the outputs will be valid at tELQV or at tGLQV, whichever is later (READ cycle #2). The data outputs will repeatedly respond to address changes within the tAVQV access time without the need for transitions on any control input pins, and will remain valid until another address change or until E or G is brought high. SRAM WRITE A WRITE cycle is performed whenever E and W are low. The address inputs must be stable prior to entering the WRITE cycle and must remain stable until either E or W goes high at the end of the cycle. The data on the common I/O pins DQ0-7 will be written into the memory if it is valid tDVWH before the end of a W controlled WRITE or tDVEH before the end of an E controlled WRITE. It is recommended that G be kept high during the entire WRITE cycle to avoid data bus contention on the common I/O lines. If G is left low, internal circuitry will turn off the output buffers tWLQZ after W goes low. Document Control #ML0007 Rev 2.0 June, 2008 8 SOFTWARE NONVOLATILE STORE The STK11C68 software STORE cycle is initiated by executing sequential READ cycles from six specific address locations. During the STORE cycle an erase of the previous nonvolatile data is first performed, followed by a program of the nonvolatile elements. The program operation copies the SRAM data into nonvolatile memory. Once a STORE cycle is initiated, further input and output are disabled until the cycle is completed. Because a sequence of READs from specific addresses is used for STORE initiation, it is important that no other READ or WRITE accesses intervene in the sequence or the sequence will be aborted and no STORE or RECALL will take place. To initiate the software STORE cycle, the following READ sequence must be performed: 1. 2. 3. 4. 5. 6. Read address Read address Read address Read address Read address Read address 0000 (hex) 1555 (hex) 0AAA (hex) 1FFF (hex) 10F0 (hex) 0F0F (hex) Valid READ Valid READ Valid READ Valid READ Valid READ Initiate STORE cycle The software sequence must be clocked with E controlled READs. Once the sixth address in the sequence has been entered, the STORE cycle will commence and the chip will be disabled. It is important that READ cycles and not WRITE cycles be used in the sequence, although it is not necessary that G be low for the sequence to be valid. After the tSTORE cycle time has been fulfilled, the SRAM will again be activated for READ and WRITE operation. SOFTWARE NONVOLATILE RECALL A software RECALL cycle is initiated with a sequence of READ operations in a manner similar to the software STORE initiation. To initiate the RECALL cycle, the following sequence of READ operations must be performed: 1. 2. 3. 4. 5. 6. Read address Read address Read address Read address Read address Read address 0000 (hex) 1555 (hex) 0AAA (hex) 1FFF (hex) 10F0 (hex) 0F0E (hex) Valid READ Valid READ Valid READ Valid READ Valid READ Initiate RECALL cycle STK11C68, STK11C68-5 (SMD5962–92324) Internally, RECALL is a two-step procedure. First, the SRAM data is cleared, and second, the nonvolatile information is transferred into the SRAM cells. After the tRECALL cycle time the SRAM will once again be ready for READ and WRITE operations. The RECALL operation in no way alters the data in the Nonvolatile Elements. The nonvolatile data can be recalled an unlimited number of times. POWER-UP RECALL During power up, or after any low-power condition (VCC < VRESET), an internal RECALL request will be latched. When VCC once again exceeds the sense voltage of VSWITCH, a RECALL cycle will automatically be initiated and will take tRESTORE to complete. If the STK11C68 is in a WRITE state at the end of power-up RECALL, the SRAM data will be corrupted. To help avoid this situation, a 10K Ohm resistor should be connected either between W and system VCC or between E and system VCC. HARDWARE PROTECT The STK11C68 offers hardware protection against inadvertent STORE operation during low-voltage conditions. When VCC < VSWITCH, software STORE operations are inhibited. LOW AVERAGE ACTIVE POWER The STK11C68 draws significantly less current when it is cycled at times longer than 50ns. Figure 2 shows the relationship between ICC and READ cycle time. Worst-case current consumption is shown for both CMOS and TTL input levels (commercial temperature range, VCC = 5.5V, 100% duty cycle on chip enable). Figure 3 shows the same relationship for WRITE cycles. If the chip enable duty cycle is less than 100%, only standby current is drawn when the chip is disabled. The overall average current drawn by the STK11C68 depends on the following items: 1) CMOS vs. TTL input levels; 2) the duty cycle of chip enable; 3) the overall cycle rate for accesses; 4) the ratio of READs to WRITEs; 5) the operating temperature; 6) the Vcc level; and 7) I/O loading. 100 Average Active Current (mA) Average Active Current (mA) 100 80 60 40 TTL 20 80 60 TTL 40 CMOS 20 CMOS 0 0 50 100 150 Cycle Time (ns) 50 200 Figure 2: ICC (max) Reads Document Control #ML0007 Rev 2.0 June, 2008 100 150 Cycle Time (ns) Figure 3: ICC (max) Writes 9 200 STK11C68, STK11C68-5 (SMD5962–92324) BEST PRACTICES nvSRAM products have been used effectively for over 15 years. While ease-of-use is one of the product’s main system values, experience gained working with hundreds of applications has resulted in the following suggestions as best practices: • The non-volatile cells in an nvSRAM are programmed on the test floor during final test and quality assurance. Incoming inspection routines at customer or contract manufacturer’s sites will sometimes reprogram these values. Final NV patterns are typically repeating patterns of AA, 55, 00, FF, A5, or 5A. End product’s firmware should not assume an NV array is in a set programmed state. Routines that check memory content values to determine first time system Document Control #ML0007 Rev 2.0 June, 2008 10 configuration, cold or warm boot status, etc. should always program a unique NV pattern (e.g., complex 4-byte pattern of 46 E6 49 53 hex or more random bytes) as part of the final system manufacturing test to ensure these system routines work consistently. • Power up boot firmware routines should rewrite the nvSRAM into the desired state. While the nvSRAM is shipped in a preset state, best practice is to again rewrite the nvSRAM into the desired state as a safeguard against events that might flip the bit inadvertently (program bugs, incoming inspection routines, etc.). STK11C68, STK11C68-5 (SMD5962–92324) COMMERCIAL AND INDUSTRIAL ORDERING INFORMATION STK11C68 - S F 45 I TR Temperature Range Blank = Tube TR = Tape and Reel Temperature Range Blank = Commercial (0 to 70°C) I = Industrial (–40 to 85°C) Access Time 25 = 25ns 35 = 35ns 45 = 45ns Lead Finish F = 100% Sn (Matte Tin) Package S = Plastic 28-pin 330 mil SOIC C = Ceramic 28-pin 300 mil DIP L = Ceramic 28-pin 350 mil LCC Document Control #ML0007 Rev 2.0 June, 2008 11 STK11C68, STK11C68-5 (SMD5962–92324) MILITARY ORDERING INFORMATION STK11C68 - 5 C 45 M Temperature Range M = Military (–55 to 125°C) Access Time 35 = 35ns 45 = 45ns 55 = 55ns Package C = Ceramic 28-pin 300 mil DIP (gold lead finish) K = Ceramic 28-pin 300 mil DIP (solder dip finish) L = Ceramic 28 pin LCC Retention / Endurance 5 = Military (10 years/105cycles) SMD5962-92324 04 MX X Lead Finish A = Solder DIP lead finish C = Gold lead DIP finish X = Lead finish “A” or “C” is acceptable Package MX = Ceramic 28 pin 300-mil DIP MY = Ceramic 28 pin LCC Device Class Indication—Class M Access Time 04 = 55ns 05 = 45ns 06 = 35ns Document Control #ML0007 Rev 2.0 June, 2008 12 STK11C68, STK11C68-5 (SMD5962–92324) ORDERING CODES Part Number Description Access Time Temperature STK11C68-SF25 5V 64K-8b SoftStore nvSRAM SOP28-330 25 ns access time Commercial STK11C68-SF35 5V 64K-8b SoftStore nvSRAM SOP28-330 35 ns access time Commercial STK11C68-SF45 5V 64K-8b SoftStore nvSRAM SOP28-330 45 ns access time Commercial STK11C68-SF25TR 5V 64K-8b SoftStore nvSRAM SOP28-330 25 ns access time Commercial STK11C68-SF35TR 5V 64K-8b SoftStore nvSRAM SOP28-330 35 ns access time Commercial STK11C68-SF45TR 5V 64K-8b SoftStore nvSRAM SOP28-330 45 ns access time Commercial STK11C68-L35 5V 64K-8b SoftStore nvSRAM CLCC28 35 ns access time Commercial STK11C68-L45 5V 64K-8b SoftStore nvSRAM CLCC28 45 ns access time Commercial STK11C68-C35 5V 64K-8b SoftStore nvSRAM CDIP28-300 35 ns access time Commercial STK11C68-C45 5V 64K-8b SoftStore nvSRAM CDIP28-300 45 ns access time Commercial STK11C68-SF25I 5V 64K-8b SoftStore nvSRAM SOP28-330 25 ns access time Industrial STK11C68-SF35I 5V 64K-8b SoftStore nvSRAM SOP28-330 35 ns access time Industrial STK11C68-SF45I 5V 64K-8b SoftStore nvSRAM SOP28-330 45 ns access time Industrial STK11C68-SF25ITR 5V 64K-8b SoftStore nvSRAM SOP28-330 25 ns access time Industrial STK11C68-SF35ITR 5V 64K-8b SoftStore nvSRAM SOP28-330 35 ns access time Industrial STK11C68-SF45ITR 5V 64K-8b SoftStore nvSRAM SOP28-330 45 ns access time Industrial STK11C68-L35I 5V 64K-8b SoftStore nvSRAM CLCC28 35 ns access time Industrial STK11C68-L45I 5V 64K-8b SoftStore nvSRAM CLCC28 45 ns access time Industrial STK11C68-C35I 5V 64K-8b SoftStore nvSRAM CDIP28-300 35 ns access time Industrial STK11C68-C45I 5V 64K-8b SoftStore nvSRAM CDIP28-300 45 ns access time Industrial STK11C68-5L35M 5V 64K-8b SoftStore nvSRAM CLCC28 35 ns access time Military STK11C68-5L45M 5V 64K-8b SoftStore nvSRAM CLCC28 45 ns access time Military STK11C68-5L55M 5V 64K-8b SoftStore nvSRAM CLCC28 55 ns access time Military STK11C68-5C35M 5V 64K-8b SoftStore nvSRAM CDIP28-300 35 ns access time Military STK11C68-5C45M 5V 64K-8b SoftStore nvSRAM CDIP28-300 45 ns access time Military STK11C68-5C55M 5V 64K-8b SoftStore nvSRAM CDIP28-300 55 ns access time Military STK11C68-5K35M 5V 64K-8b SoftStore nvSRAM CDIP28-300 35 ns access time Military Document Control #ML0007 Rev 2.0 June, 2008 13 STK11C68, STK11C68-5 (SMD5962–92324) Package Diagrams 28 Pin 330 mil SOIC 0.713 0.733 ( 18.11 ) 18.62 0.112 (2.845) 0.020 0.014 ( 0.508 ) 0.356 0.050 (1.270) 0.103 0.093 0.336 0.326 0.004 (0.102) ( 2.616 ) 2.362 ( 8.534 ) 8.280 0.477 0.453 ( 12.116 ) 11.506 Pin 1 0.014 0.008 10° 0° ( 0.356 ) 0.203 0.044 0.028 DIM = INCHES MIN ) ( MAX DIM = mm Document Control #ML0007 Rev 2.0 June, 2008 MIN MAX 14 ( 1.117 ) 0.711 STK11C68, STK11C68-5 (SMD5962–92324) 28 Pin 300 mil SP DIL Sidebraze 1.386 1.414 35.20 (35.92 ) .280 .310 --.060 7.36 (7.87 ) PIN 14 --(1.52 ) .124 ( 3.15 4.14 ) .162 .040 .060 .125 (3.18) MIN .016 .020 .290 .310 (0.41 0.51) .048 .052 ( 7.37 7.87 ) (1.22 1.32) ( ) .090 2.29 .110 2.79 DIM = INCHES DIM = mm .009 .012 .300 .320 ( 0.23 0.30 ) (7.62 8.13) Document Control #ML0007 Rev 2.0 June, 2008 15 MIN MAX MIN ( MAX ) (1.02 1.52 ) STK11C68, STK11C68-5 (SMD5962–92324) 28 Pin 350 mil LCC 0.542 13.77 0.558 14.17 ( ο ) (1.02) 0.040 REF X 45 3 places ( 0.342 8.69 0.358 9.09 ) ο (0.51) 0.020 REF X 45 1.91 ( 2.41 ) 0.045 1.14 0.055 ( 1.40 ) 0.075 0.095 (0.23) 0.009 REF 28 places Pad 1 Index ( 0.022 0.028 0.56 0.71 )( 0.006 0.022 0.15 0.56 ) 0.045 0.055 ( 1.14 1.40 ) ( 0.070 1.78 0.090 2.29 ( --0.558 ( --14.17 ) ) 0.062 1.57 0.078 1.98 ( ) 0.015 --0.381 --- ) DIM = INCHES DIM = mm Document Control #ML0007 Rev 2.0 June, 2008 16 MIN MAX MIN ( MAX ) STK11C68, STK11C68-5 (SMD5962–92324) Document Revision History Revision Date Summary 0.0 December 2002 Combined commercial, industrial and military data sheets. Removed 20 nsec device. 0.1 September 2003 Added lead-free lead finish 0.2 March 2006 Removed leaded lead finish for all Commercial/Industrial Parts, Removed “P” package. 0.3 February 2007 Add fast power-down slew RSK information Restore Comm/Ind C & L Package Options Add Tape Reel Ordering Options Add Product Ordering Code Listing Add Package Outline Drawings Reformat Entire Document 0.4 July 2007 extend definition of tHZ (#7) update fig. SRAM READ CYCLE #2, SRAM WRITE CYCLE #1, Note l and Note m to clarify product usage 2.0 June 2008 Added STK-11C68-5 part number to header. Page 3: in the DC characteristics table, identified access times valid for commercial and industrial applications only. Also, referred users to Website for package thermal characteristics. Page 4, in SRAM Read Cycles #1 & #2 table, revised description for tELQX and tEHQZ and changed Symbol #2 to tELEH for Read Cycle Time; updated SRAM Read Cycle #2 timing diagram and changed title to add G controlled. Page 12: added access time column to ordering information table. SIMTEK STK11C68, STK11C68-5 Datasheet, June 2008 Copyright 2008, Simtek Corporation. All rights reserved. This datasheet may only be printed for the expressed use of Simtek Customers. No part of the datasheet may be reproduced in any other form or means without the express written permission from Simtek Corporation. The information contained in this publication is believed to be accurate, but changes may be made without notice. Simtek does not assume responsibility for, or grant or imply any warranty, including MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE regarding this information, the product or its use. Nothing herein constitutes a license, grant or transfer of any rights to any Simtek patent, copyright, trademark, or other proprietary right. Document Control #ML0007 Rev 2.0 June, 2008 17